STW21N90K5 [STMICROELECTRONICS]
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH⢠5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages; N沟道900 V, 0.25 I© (典型值) , 18.5齐纳保护SuperMESHâ ??在D2PAK , TO- 220FP , TO- 220和TO- 247封装¢ 5功率MOSFET型号: | STW21N90K5 |
厂家: | ST |
描述: | N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH⢠5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages |
文件: | 总22页 (文件大小:998K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STB21N90K5, STF21N90K5, STP21N90K5,
STW21N90K5
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5
Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
TAB
Order codes VDSS RDS(on)max
ID
PW
3
3
1
2
STB21N90K5
STF21N90K5
250 W
40 W
1
2
D PAK
TO-220FP
900 V < 0.299 Ω 18.5 A
TAB
STP21N90K5
STW21N90K5
250 W
■ TO-220 worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
3
2
3
1
2
1
TO-220
TO-247
■ 100% avalanche tested
■ Zener-protected
Figure 1.
Internal schematic diagram
D(2, TAB)
Applications
■ Switching applications
Description
G(1)
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB21N90K5
STF21N90K5
STP21N90K5
STW21N90K5
D2PAK
TO-220FP
TO-220
Tape and reel
21N90K5
Tube
TO-247
October 2012
Doc ID 16744 Rev 6
1/22
This is information on a product in full production.
www.st.com
22
Contents
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D2PAK,
TO-220FP
TO-220, TO-247
VGS
ID
Gate- source voltage
30
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
18.5
11.6
74
18.5(1)
11.6 (1)
74 (1)
40
ID
A
(2)
IDM
A
PTOT
IAR
Total dissipation at TC = 25 °C
250
W
Max current during repetitive or single
pulse avalanche
(pulse width limited by Tjmax
6
A
mJ
V
)
Single pulse avalanche energy
EAS
200
(starting TJ = 25 °C, ID=IAR, VDD= 50 V)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
Viso
2500
(t=1 s;TC=25 °C)
dv/dt (3)
Peak diode recovery voltage slope
6
V/ns
°C
Tj
Operating junction temperature
Storage temperature
-55 to 150
Tstg
1. Limited by package.
2. Pulse width limited by safe operating area.
3.
I
≤ 18.5 A, di/dt ≤ 100 A/µs, V
≤V
SD
DS(peak) (BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
D²PAK TO-220FP TO-220 TO-247
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb Thermal resistance junction-pcb max
0.5
3.13
0.5
62.5
50
°C/W
30
Doc ID 16744 Rev 6
3/22
Electrical characteristics
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA
Min. Typ. Max. Unit
Drain-source breakdown
voltage (VGS= 0)
V(BR)DSS
900
V
VDS = 900 V
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 900 V, Tc=125 °C
50
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
20 V
10
µA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 100 µA
VGS = 10 V, ID= 9 A
3
4
5
Static drain-source on
resistance
RDS(on)
0.25 0.299
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
Output capacitance
1645
112
pF
pF
Coss
VDS =100 V, f=1 MHz, VGS=0
-
-
-
-
Reverse transfer
capacitance
Crss
2
pF
pF
Equivalent capacitance time
related
(1)
Co(tr)
133
VGS = 0, VDS = 0 to 720 V
Equivalent capacitance
energy related
(2)
Co(er)
-
-
16
4
-
-
pF
RG
Intrinsic gate resistance
f = 1MHz open drain
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 720 V, ID = 18.5 A
43
12
25
nC
nC
nC
VGS =10 V
-
-
(see Figure 20)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V increases from 0 to 80% V
DS
DSS
4/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
17
27
52
40
ns
ns
ns
ns
VDD = 720 V, ID = 10 A,
RG=4.7 Ω, VGS=10 V
(see Figure 22)
-
-
Turn-off delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
19
76
A
A
-
-
ISDM
Source-drain current (pulsed)
(1)
VSD
Forward on voltage
ISD= 18.5 A, VGS=0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 18.5 A, VDD= 60 V
di/dt = 100 A/µs,
548
12
ns
μC
A
Qrr
-
-
IRRM
(see Figure 21)
46
I
SD= 18.5 A,VDD= 60 V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
660
15
ns
μC
A
di/dt=100 A/µs,
Tj=150 °C
(see Figure 21)
Qrr
IRRM
45
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
V(BR)GSO Gate-source breakdown voltage IGS = 1 mA, ID = 0
-
-
V
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 16744 Rev 6
5/22
Electrical characteristics
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D2PAK
Figure 3.
Thermal impedance for TO-220 /
D2PAK
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Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
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Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
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6/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
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Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
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Doc ID 16744 Rev 6
7/22
Electrical characteristics
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs
vs temperature
temperature
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Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
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Figure 18. Maximum avalanche energy vs
starting Tj
AM11194v1
EAS
(mJ)
I
D=6 A
V
DD=50 V
200
180
160
140
120
100
80
60
40
20
0
0
20
40
60 80 100
120
140T
J(°C)
8/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
D.U.T.
B
3.3
μF
VDD
μF
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 16744 Rev 6
9/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Package mechanical data
Table 9.
Dim.
D²PAK (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
Doc ID 16744 Rev 6
11/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 25. D²PAK (TO-263) drawing
0079457_T
Figure 26. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
12/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Table 10. TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 16744 Rev 6
13/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 27. TO-220FP drawing
7012510_Rev_K_B
14/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Table 11. TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.65
2.95
Doc ID 16744 Rev 6
15/22
Package mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
16/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Table 12. TO-247 mechanical data
Package mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅P
∅R
S
3.55
4.50
5.30
3.65
5.50
5.70
Doc ID 16744 Rev 6
17/22
Package mechanical data
Figure 29. TO-247 drawing
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
0075325_G
18/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Packaging mechanical data
5
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Doc ID 16744 Rev 6
19/22
Packaging mechanical data
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Figure 30. Tape for D²PAK (TO-263) and DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 31. Reel for D²PAK (TO-263) and DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
20/22
Doc ID 16744 Rev 6
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
Revision history
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
05-Nov-2009
18-Nov-2009
12-Jan-2010
14-Jul-2010
1
2
3
4
First release.
Updated description on cover page
Corrected VGS value in Table 2: Absolute maximum ratings
Document status promoted from preliminary data to datasheet.
– Inserted device in D2PAK.
– Updated Figure 2: Safe operating area for TO-220 / D2PAK,
Figure 4: Safe operating area for TO-220FP and Figure 6:
Safe operating area for TO-247.
21-Dec-2011
12-Oct-2012
5
6
– Inserted Section 5: Packaging mechanical data on page 19.
– Minor text changes.
– Updated: Qg value (test conditions) in Table 5
– Updated: Td(on) value (test conditions) in Table 6
– Updated: values (test conditions) in Table 8
– Updated: Figure 10
– Updated: Section 4: Package mechanical data
Doc ID 16744 Rev 6
21/22
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5
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Doc ID 16744 Rev 6
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