STW43NM60ND [STMICROELECTRONICS]
N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode; N沟道600 V ， 0.075 Ω ， 35 A TO -247 FDmesh ™功率MOSFET （具有快速二极管
| 型号： | STW43NM60ND |
| 厂家： | 
ST |
| 描述： | N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode |
| 文件： | 总12页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW43NM60ND
N-channel 600 V, 0.075 Ω, 35 A TO-247
FDmesh™ Power MOSFET (with fast diode)
Features
VDSS
TJMAX
@
RDS(on)
max
Type
ID
STW43NM60ND
650 V
< 0.088 Ω
35 A
■ The worldwide best R
*area amongst the
3
DS(on)
2
fast recovery diode devices
1
■ 100% avalanche tested
TO-247
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities.
Application
Figure 1.
Internal schematic diagram
■ Switching applications
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Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
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Table 1.
Device summary
Order code
STW43NM60ND
Marking
Package
TO-247
Packaging
43NM60ND
Tube
February 2010
Doc ID 14402 Rev 3
1/12
www.st.com
12
Contents
STW43NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 14402 Rev 3
STW43NM60ND
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
600
25
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
35
A
ID
22
A
(1)
IDM
140
A
PTOT
dv/dt (2)
Tstg
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Storage temperature
255
W
V/ns
°C
°C
40
–55 to 150
150
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 35 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.49
50
°C/W
°C/W
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAS
14
A
Single pulse avalanche energy
EAS
1000
mJ
(starting TJ=25 °C, ID=IAS, VDD=50 V)
Doc ID 14402 Rev 3
3/12
Electrical characteristics
STW43NM60ND
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
600
V
breakdown voltage
Zero gate voltage
V
DS = Max rating
1
µA
µA
IDSS
drain current (VGS = 0)
VDS = Max rating, @125 °C
100
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20 V
100
5
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 17.5 A
3
4
Static drain-source on
resistance
RDS(on)
0.075 0.088
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS=15 V I = 17.5 A
-
17
-
S
, D
Input capacitance
Ciss
Coss
Crss
4300
250
25
pF
pF
pF
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
Coss eq.
V
GS = 0, VDS = 0 to 480 V
-
-
530
-
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 35 A,
VGS = 10 V,
145
18
nC
nC
nC
(see Figure 15)
80
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
Rg
Gate input resistance
-
1.7
-
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/12
Doc ID 14402 Rev 3
STW43NM60ND
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Switching times
Parameter
Symbol
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
30
40
ns
ns
ns
ns
VDD = 300 V, ID = 17.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 14)
-
-
Turn-off delay time
Fall time
120
50
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
Source-drain current
35
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
140
(2)
VSD
Forward on voltage
ISD = 35 A, VGS = 0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V
190
1.6
17
ns
µC
A
Qrr
-
-
IRRM
(see Figure 16)
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
280
3.0
22
ns
µC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 14402 Rev 3
5/12
Electrical characteristics
STW43NM60ND
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM01508v1
I
D
(A)
102
10µs
101
100µs
1ms
100
10-1
10ms
10-1
100
102
101
VDS(V)
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
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Figure 6. Transconductance
Figure 7. Static drain-source on resistance
AM01511v1
AM01512v1
g
fs
R
DS(on)
(Ω)
(S)
TJ=-50°C
0.085
0.080
0.075
0.070
20.5
TJ=25°C
15.5
10.5
5.5
TJ=150°C
0.065
0.5
0
0.060
0
ID
(A)
ID(A)
35
5
10 15
20 25
30
10
20
30
6/12
Doc ID 14402 Rev 3
STW43NM60ND
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
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Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM01515v1
AM01516v1
V
GS(th)
RDS(on)
(norm)
2.1
(norm)
1.1
1.9
1.0
0.9
1.7
1.5
1.3
1.1
0.8
0.9
0.7
0.5
-50 -25
0.7
T
J
(°C)
TJ(°C)
100 125
125
-50 -25
0
25 50 75 100
0
25 50 75
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B
vs temperature
VDSS
AM01517v1
AM01518v1
V
(V)
1.0
SD
BV(DSS)
(V)
25°C
1.05
1.01
0.9 -50°C
0.8
TJ=150°C
0.7
0.6
0.97
0.5
0.4
0.93
-50 -25
TJ(°C)
35
I
SD(A)
0
5
10 15 20 25 30
0
25 50 75
100 125
Doc ID 14402 Rev 3
7/12
Test circuits
STW43NM60ND
3
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
8/12
Doc ID 14402 Rev 3
STW43NM60ND
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 14402 Rev 3
9/12
Package mechanical data
STW43NM60ND
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
10/12
Doc ID 14402 Rev 3
STW43NM60ND
Revision history
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
06-Feb-2008
22-Jan-2009
1
2
First release
Document status promoted from preliminary data to datasheet.
Figure 13: Normalized BVDSS vs temperature has been
corrected
16-Feb-2010
3
Doc ID 14402 Rev 3
11/12
STW43NM60ND
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Doc ID 14402 Rev 3
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