STX30NM60ND [STMICROELECTRONICS]
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247; N沟道600 V ， 0.11 Ω ， 25 A FDmesh ？二功率MOSFET （具有快速二极管）的TO- 220，TO- 220FP ， D2PAK ， I2PAK ，TO- 247
| 型号： | STX30NM60ND |
| 厂家： | 
ST |
| 描述： | N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 |
| 文件： | 总18页 (文件大小：794K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STx30NM60ND
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET
(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
VDSS @TJ
max
RDS(on)
max
Type
ID
3
3
I2PAK
2
2
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
25 A
25 A
1
1
TO-247
650 V
0.13 Ω
25 A(1)
3
25 A
1
D2PAK
25 A
1. Limited only by maximum temperature allowed
3
2
3
■ The world’s best R
in TO-220 amongst
1
TO-220
2
DS(on)
1
TO-220FP
the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Figure 1.
Internal schematic diagram
■ Extremely high dv/dt and avalanche
capabilities
$ꢅꢆꢇ
Application
■ Switching applications
'ꢅꢁꢇ
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
It is therefore strongly recommended for bridge
topologies, in particular ZVS phase-shift
converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
D²PAK
I²PAK
Tape and reel
Tube
TO-220FP
TO-220
TO-247
Tube
Tube
Tube
November 2008
Rev 2
1/18
www.st.com
18
Contents
STx30NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STx30NM60ND
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/D2PAK
TO-220FP
I2PAK / TO-247
600
25
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
25
25(1)
15.8(1)
100(1)
40
A
A
ID
15.8
100
190
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
W
dv/dt(3)
40
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
VISO
--
2500
V
(t = 1 s; TC = 25 °C)
Tstg
TJ
Storage temperature
– 55 to 150
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 25 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Parameter
Symbol
TO-220 I²PAK
TO-247 D²PAK TO-220FP Unit
Thermal resistance
junction-case max
Rthj-case
Rthj-amb
Rthj-pcb
Tl
0.66
3.1
62.5
--
°C/W
°C/W
°C/W
°C
Thermal resistance
junction-ambient max
62.5
50
--
--
Thermal resistance
junction-pcb max
--
--
30
Maximum lead temperature
for soldering purpose
300
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
IAR
12
A
Single pulse avalanche energy
EAS
900
mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
3/18
Electrical characteristics
STx30NM60ND
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
On/off states
Parameter
Value
Symbol
Test conditions
Unit
Min.
Typ. Max.
Drain-source
V(BR)DSS
ID = 1 mA, VGS = 0
600
V
breakdown voltage
V
DD= 480 V, ID= 25 A,
dv/dt(1) Drain source voltage slope
48
V/ns
VGS= 10 V
Zero gate voltage
IDSS
V
DS = Max rating
1
µA
µA
drain current (VGS = 0)
VDS = Max rating @125 °C
100
Gate-body leakage
IGSS
VGS
VDS = VGS, ID = 250 µA
GS = 10 V, ID = 12.5 A
=
20 V
100
nA
V
current (VDS = 0)
VGS(th) Gate threshold voltage
3
4
5
Static drain-source on
resistance
RDS(on)
V
0.11
0.13
Ω
1. Characteristic value at turn off on inductive load
Table 6.
Dynamic
Parameter
Symbol
Test conditions
Min. Typ. Max.
Unit
(1)
gfs
Forward transconductance VDS = 15 V I = 12.5 A
25
S
, D
pF
pF
pF
Input capacitance
Ciss
Coss
Crss
2800
200
24
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
Coss eq.
VGS = 0, VDS = 0 to 480 V
125
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
VDD =300 V, ID = 12.5 A
G = 4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
20
50
ns
ns
ns
ns
R
Turn-off delay time
Fall time
110
75
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 25 A,
VGS = 10 V,
100
16
nC
nC
nC
(see Figure 19)
54
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
Rg
Gate input resistance
3.0
Ω
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STx30NM60ND
Electrical characteristics
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
25
A
A
(1)
ISDM
Source-drain current (pulsed)
100
(2)
VSD
Forward on voltage
ISD = 25 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
170
1.2
15
ns
µC
A
ISD = 25 A, VDD = 60 V
di/dt=100 A/µs
Qrr
(see Figure 20)
IRRM
ISD = 25 A,VDD = 60 V
di/dt=100 A/µs,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
250
2.5
20
ns
µC
A
Qrr
TJ = 150 °C
IRRM
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
5/18
Electrical characteristics
STx30NM60ND
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 4. Safe operating area for TO-220FP
Figure 6. Safe operating area for TO-247
6/18
Figure 5. Thermal impedance for TO-220FP
Figure 7. Thermal impedance for TO-247
STx30NM60ND
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM00052v1
AM00051v1
ID(A)
ID(A)
VGS=10V
30
5
4
3
2
1
0
25
5V
20
15
10
5
4V
0
0
5
10
15
20
25
30 VSD(V)
VGS(V)
0
2
4
6
8
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
AM00046v1
AM00048v1
RDS(on)
(Ω)
Gfs(S)
30.5
0.135
TJ=-50°C
25°C
0.115
0.095
25.5
20.5
15.5
10.5
5.5
150°C
VGS=10V
0.075
ID=12.5A
0.055
0.035
0.5
0.015
0
5
10
15
20
25
D(A)
0
5
10
15
20
25
ID(A)
I
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
AM00044v1
AM00045v1
C(pF)
10000
VGS(V)
VDD=480V
ID=25A
12
10
8
Ciss
1000
100
10
6
Coss
Crss
4
2
0
0
20
40
60
80
100
Qg(nC)
1
VGS(V)
0.1
1
10
100
7/18
Electrical characteristics
STx30NM60ND
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature
AM00043v1
AM00047v1
VGS(th)
(norm)
RDS(on)
(norm)
1.1
1.05
1
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
ID=250µA
0.95
0.9
0.85
0.8
0.75
0.7
TJ(°C)
-50
-25
0
25
50
75
100
125
-50 -25
0
25
50
75 100 125
TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B
vs temperature
VDSS
AM00049v1
AM00050v1
25°C
BVDSS
V
SD(V)
(norm)
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
TJ=-50°C
1
150°C
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125 TJ(°C)
0
10
20
ISD(A)
8/18
STx30NM60ND
Test circuits
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped Inductive load test
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data
STx30NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/18
STx30NM60ND
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/18
Package mechanical data
STx30NM60ND
TO-220FP mechanical data
mm.
inch
Typ.
DIM.
Min.
4.4
Typ.
Max.
4.6
2.7
2.75
0.7
1
Min.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/18
STx30NM60ND
Package mechanical data
TO-262 (I2PAK) mechanical data
mm.
Typ.
inch
Typ.
DIM.
Min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
Max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
Min.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Max.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/18
Package mechanical data
STx30NM60ND
D²PAK (TO-263) mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
14/18
STx30NM60ND
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
15/18
Packing mechanical data
STx30NM60ND
5
Packing mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/18
STx30NM60ND
Revision history
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
29-Nov-2007
11-Nov-2008
1
2
initial release
Document status promoted from preliminary data to datasheet.
17/18
STx30NM60ND
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18/18
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