T0805MH [STMICROELECTRONICS]
600V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC;
| 型号： | T0805MH |
| 厂家： | 
ST |
| 描述： | 600V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC 栅 三端双向交流开关 栅极 |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T0805xH
T0809xH
SENSITIVE GATE TRIACS
FEATURES
IT(RMS) = 8A
VDRM = 400V to 800V
I
GT ≤ 5mA to ≤ 10mA
A1
A2
G
DESCRIPTION
The T08xxxH series of triacs uses a high
performance MESA GLASS technology. These
parts are intended for general purpose
applications where gate high sensitivity is
required.
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360° conductionangle)
Tc= 95 °C
8
A
ITSM
Non repetitive surge peak on-state current
j
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
73
70
24
10
A
(T initial = 25°C )
I2t
I2t Value for fusing
A2s
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
A/µs
IG = 50 mA
diG /dt = 0.1 A/µs.
Non
Repetitive
50
Storage and operating junction temperature range
Tstg
Tj
- 40, + 150
- 40, + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
Voltage
Symbol
Parameter
Unit
D
M
S
N
Repetitive peak off-state voltage
Tj = 125°C
VDRM
VRRM
400
600
700
800
V
January 1995
1/5
T0805xH / T0809xH
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°C/W
°C/W
°C/W
Rth(j-a)
Rth(j-c)
Rth(j-c)
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360°conduction angle (F=50Hz)
60
4
3
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Unit
Symbol
Test Conditions
Quadrant
05
09
IGT
VGT
VGD
tgt
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj= 25°C
Tj= 25°C
I-II-III-IV MAX
I-II-III-IV MAX
5
10
mA
V
1.5
0.2
2
Tj= 125°C I-II-III-IV
MIN
TYP
V
VD=VDRM IG = 40mA
IT = 11A
Tj= 25°C
I-II-III-IV
µs
dIG/dt = 0.5A/µs
IT= 50mA Gate open
IG= 1.2 IGT
IH *
IL
Tj= 25°C
Tj= 25°C
MAX
TYP
TYP
MAX
MAX
MAX
MIN
5
5
10
10
20
mA
mA
I-III-IV
II
10
ITM= 11A tp= 380µs
VTM
*
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
1.65
5
V
VD = VDRM
VR = VRRM
IDRM
IRRM
µA
2
mA
V/µs
dV/dt *
VD=67%VDRM
Gate open
20
2
TYP
TYP
10
1
(dV/dt)c * (dI/dt)c = 3.5 A/ms
Tj= 110°C
V/µs
* Foreither polarity of electrode A2 voltage with reference to electrode A1
ORDERING INFORMATION
T 08 09 M H
PACKAGE :
H = TO220 Non-insulated
TRIAC MESA GLASS
CURRENT
VOLTAGE
SENSITIVITY
2/5
T0805xH / T0809xH
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation betweenmaximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
Tcase (oC)
P (W)
P (W)
12
12
Rth = 0 o C/W
180 O
2.5o C/W
= 180o
= 120o
= 90o
-95
10
8
5o C/W
10
8
6
7.5o C/W
-100
-105
-110
-115
-120
-125
= 60o
6
= 30o
4
4
2
2
I
(A)
T(RMS)
Tamb (oC)
20
0
0
0
1
2
3
4
5
6
7
8
0
40
60
80
100 120 140
Fig.3 : RMSon-state current versuscase tempera-
ture.
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
I
(A)
T(RMS)
10
8
6
4
2
0
Zth(j-c)
= 180o
0.1
Zth(j-a)
Tcase(oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
tp(s)
1E+2 5E+2
0.01
1E-3
0
1E-2
1E-1
1E+0
1E+1
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
70
60
50
40
30
20
10
0
Tj initial = 25oC
2.6
2.4
2.2
2.0
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
3/5
T0805xH / T0809xH
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidalpulse with width : t ≤ 10ms, and cor-
responding value of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
1000
100
10
100
10
1
Tj initial = 25oC
Tj initial
25oC
I
TSM
Tj max
2
I
t
Tj max
Vto =1.02V
Rt =0.050
V
(V)
t (ms)
TM
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
10
4/5
T0805xH / T0809xH
PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
REF.
A
B
C
D
F
G
H
I
10.3
0.406
A
H
6.3
6.5 0.248 0.256
G
J
9.1
0.358
I
B
C
12.7
0.500
4.2
0.165
0.118
3.0
L
O
P
4.5
4.7
0.177 0.185
0.139 0.144
0.047 0.051
0.035
F
3.53 3.66
D
J
1.2
1.3
0.9
L
N1
M
M
N
2.7
0.106
0.100
N
5.3
0.209
N1 2.54
O
P
1.2
1.4
0.047 0.055
0.045
1.15
Marking : type number
Weight : 1.8 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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