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T410-700WTR [STMICROELECTRONICS]

4A TRIACS; 双向可控硅4A
T410-700WTR
型号： T410-700WTR
厂家： ST    ST
描述：

4A TRIACS
双向可控硅4A

可控硅 三端双向交流开关
文件： 总8页 (文件大小：120K)
中文：  中文翻译
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T4 Series  
®
SNUBBERLESS™ & LOGIC LEVEL  
4A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
4
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 to 800  
V
A2  
DRM RRM  
A2  
I
5 to 35  
mA  
GTT (Q )  
1
A1  
A2  
G
A1  
A2  
G
DPAK  
(T4-B)  
IPAK  
(T4-H)  
DESCRIPTION  
Based on ST’s Snubberless / Logic level technolo-  
gy providing high commutation performances, the  
T4 series is suitable for use on AC inductive loads.  
They are recommended for applications using  
universal motors, electrovalves.... such as kitchen  
aid equipments, power tools, dishwashers,...  
Available in a fully insulated package, the  
T4...-...W version complies with UL standards (ref.  
E81734).  
A2  
A1  
A2  
A1  
A2  
G
G
ISOWATT 220AB  
(T4-W)  
TO-220AB  
(T4-T)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (full sine wave)  
DPAK / IPAK  
TO-220AB  
A
T(RMS)  
Tc = 110°C  
4
ISOWATT 220AB  
F = 50 Hz  
Tc = 105°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
30  
31  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
5.1  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr ≤ 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
June 2003 - Ed: 5  
1/8  
T4 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Quadrant  
T4  
T410  
10  
Unit  
T405  
5
T435  
35  
I
(1)  
mA  
V
I - II - III  
I - II - III  
I - II - III  
MAX.  
MAX.  
MIN.  
GT  
V
V
V
= 12 V  
R = 30 Ω  
L
D
1.3  
GT  
V
= V  
R = 33 kΩ  
0.2  
D
DRM  
L
GD  
V
Tj = 125°C  
I
(2)  
I = 100 mA  
MAX.  
MAX.  
10  
10  
15  
20  
1.8  
0.9  
-
15  
25  
30  
40  
2.7  
2.0  
-
35  
50  
60  
400  
-
mA  
mA  
H
T
I
I
= 1.2 I  
I - III  
II  
G
GT  
L
dV/dt (2)  
V
= 67 %V  
gate open Tj = 125°C  
DRM  
MIN.  
MIN.  
V/µs  
D
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C  
(dV/dt)c = 10 V/µs Tj = 125°C  
A/ms  
-
Without snubber  
Tj = 125°C  
2.5  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Value  
Unit  
I
= 5.5 A  
tp = 380 µs  
Tj = 25°C  
MAX.  
MAX.  
MAX.  
1.6  
V
V
(2)  
(2)  
TM  
TM  
V
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
0.9  
120  
5
V
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
d
I
I
V
= V  
DRM  
RRM  
DRM RRM  
MAX.  
1
mA  
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (AC)  
DPAK  
IPAK  
°C/W  
th(j-c)  
2.6  
TO-220AB  
ISOWATT220AB  
DPAK  
4.0  
²
R
Junction to ambient  
°C/W  
70  
S = 0.5 cm  
th(j-a)  
TO-220AB  
ISOWATT220AB  
60  
IPAK  
100  
S = Copper surface under tab  
T
2/8  
T4 Series  
PRODUCT SELECTOR  
Part Number  
Voltage (xxx)  
Sensitivity  
Type  
Package  
600 V 700 V 800 V  
T405-xxxB  
T405-xxxH  
T405-xxxT  
T405-xxxW  
T410-xxxB  
T410-xxxH  
T410-xxxT  
T410-xxxW  
T435-xxxB  
T435-xxxH  
T435-xxxT  
T435-xxxW  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
5 mA  
5 mA  
Logic level  
Logic level  
Logic level  
Logic level  
Logic level  
Logic level  
Logic level  
Logic level  
Snubberless  
Snubberless  
Snubberless  
Snubberless  
DPAK  
IPAK  
5 mA  
TO-220AB  
ISOWATT220AB  
DPAK  
5 mA  
10 mA  
10 mA  
10 mA  
10 mA  
35 mA  
35 mA  
35 mA  
35 mA  
IPAK  
TO-220AB  
ISOWATT220AB  
DPAK  
IPAK  
TO-220AB  
ISOWATT220AB  
ORDERING INFORMATION  
T 4 05 - 600 B  
(-TR)  
TRIAC  
SERIES  
CURRENT: 4A  
VOLTAGE:  
600: 600V  
700: 700V  
PACKING MODE:  
Blank:Tube  
-TR: DPAK Tape & Reel  
800: 800V  
PACKAGE:  
B: DPAK  
SENSITIVITY:  
05: 05mA  
10: 10mA  
H: IPAK  
T:TO-220AB  
W: ISOWATT220AB  
35: 35mA  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
T4xx-yyyB  
T4xx-yyyB-TR  
T4xx-yyyH  
T4xx-yyyT  
T4xx-yyyW  
T4xxyyyB  
T4xxyyyB  
T4xxyyy  
0.3 g  
0.3 g  
0.4 g  
2.3 g  
2.1 g  
75  
2500  
75  
Tube  
Tape & reel  
Tube  
T4xxyyyT  
T4xxyyyW  
50  
Tube  
50  
Tube  
Note: xx = sensitivity, yyy = voltage  
3/8  
T4 Series  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2-1: RMS on-state current case versus tem-  
on-state current (full cycle).  
perature (full cycle).  
P(W)  
IT(RMS)(A)  
4.5  
6
4.0  
5
4
3
2
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
TO-220AB/DPAK/IPAK  
ISOWATT220AB  
1
IT(RMS)(A)  
Tc(°C)  
0
0
25  
50  
75  
100  
125  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Fig. 2-2: RMS on-state current versus ambient  
temperature (printed circuit FR4, copper thick-  
ness: 35µm),full cycle.  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
K=[Zth/Rth]  
IT(RMS)(A)  
2.0  
1.8  
1E+0  
DPAK  
(S=0.5cm²)  
Rth(j-c)  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
ISOWATT220AB  
Rth(j-a)  
TO-220AB/DPAK/IPAK  
TO-220AB/ISOWATT220AB  
1E-1  
DPAK/IPAK  
0.2  
0.0  
Tamb(°C)  
50 75  
tp(s)  
1E-2  
0
25  
100  
125  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]  
ITSM(A)  
2.5  
35  
30  
t=20ms  
IGT  
2.0  
One cycle  
25  
Non repetitive  
Tj initial=25°C  
1.5  
20  
IH & IL  
15  
1.0  
Repetitive  
Tc=110°C  
10  
0.5  
5
Tj(°C)  
40 60  
Number of cycles  
0.0  
-40 -20  
0
0
20  
80 100 120 140  
1
10  
100  
1000  
4/8  
T4 Series  
Fig. 6: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
Fig. 7: On-state characteristics (maximum  
values).  
a
tp < 10ms, and corresponding value of I²t.  
ITM(A)  
ITSM (A), I²t (A²s)  
30.0  
500  
Tj initial=25°C  
dI/dt limitation:  
50A/µs  
10.0  
100  
10  
1
ITSM  
Tj=Tj max.  
1.0  
I²t  
Tj max.:  
Vto= 0.90 V  
Rd= 120 mΩ  
tp (ms)  
VTM(V)  
0.1  
0.01  
0.10  
1.00  
10.00  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Fig. 8: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values).  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
6
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
5
4
3
2
T435  
T410  
T405  
0.4  
1
(dV/dt)c (V/µs)  
1.0 10.0  
0.2  
0.0  
Tj(°C)  
0
0.1  
100.0  
0
25  
50  
75  
100  
125  
Fig. 10: DPAK thermal resistance junction to  
ambient versus copper surface under tab (printed  
circuit board FR4, copper thickness: 35µm).  
Rth(j-a) (°C/W)  
100  
DPAK  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
S(cm²)  
0
4
8
12 16 20 24 28 32 36 40  
5/8  
T4 Series  
PACKAGE MECHANICAL DATA  
DPAK (Plastic)  
DIMENSIONS  
Millimeters  
REF.  
Inches  
Min.  
Max  
Min.  
Max.  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
B2  
C
R
C2  
D
R
E
G
H
L2  
L4  
R
0.80 typ.  
0.031 typ.  
0.60  
1.00  
0.023  
0.039  
0.2 typ.  
0.007 typ.  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
DPAK (Plastic)  
6.7  
6.7  
3
3
1.6  
1.6  
2.3 2.3  
6/8  
T4 Series  
PACKAGE MECHANICAL DATA  
ISOWATT220AB (Plastic)  
DIMENSIONS  
Millimeters  
REF.  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
4.40  
2.50  
2.50  
0.40  
0.75  
1.15  
1.15  
4.95  
2.40  
10.00  
4.60  
2.70  
2.75  
0.70  
1.00  
1.70  
1.70  
5.20  
2.70  
10.40  
0.173  
0.098  
0.098  
0.016  
0.030  
0.045  
0.045  
0.195  
0.094  
0.394  
0.181  
0.106  
0.108  
0.028  
0.039  
0.067  
0.067  
0.205  
0.106  
0.409  
D
E
F
F1  
F2  
G
G1  
H
L2  
L3  
L4  
L6  
L7  
Diam  
16.00 typ.  
0.630 typ.  
28.60  
9.80  
30.60  
10.60  
16.40  
9.30  
1.125  
0.386  
0.626  
0.354  
0.118  
1.205  
0.417  
0.646  
0.366  
0.126  
15.90  
9.00  
3.00  
3.20  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
B
C
b2  
Min. Typ. Max. Min.  
Typ. Max.  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
0.147  
L
3.75  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
A
0.409  
b1  
b2  
C
0.034  
l4  
0.051  
0.181  
c2  
a1  
c1  
c2  
e
0.027  
0.107  
l3  
l2  
a2  
0.106  
F
0.259  
I
0.151  
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
b1  
M
c1  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
e
l2  
l3  
M
2.60  
0.102  
7/8  
T4 Series  
PACKAGE MECHANICAL DATA  
IPAK (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
A1  
A3  
B
2.2  
0.9  
2.4  
1.1  
1.3  
0.9  
5.4  
0.85  
0.086  
0.035  
0.027  
0.025  
0.204  
0.094  
0.043  
0.051  
0.035  
0.212  
0.033  
A
E
C2  
0.7  
B2  
0.64  
5.2  
L2  
B2  
B3  
B5  
B6  
C
0.3  
0.035  
D
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
H
B3  
L1  
C2  
D
B6  
L
A1  
B
V1  
E
6.4  
4.4  
15.9  
9
G
H
16.3 0.626  
B5  
C
L
9.4  
1.2  
1
0.354  
0.031  
G
A3  
L1  
L2  
V1  
0.8  
0.8  
0.031 0.039  
10°  
10°  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A  
http://www.st.com  
8/8  

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