T630-800W [STMICROELECTRONICS]

6A SNUBBERLESTM TRIAC; 6A SNUBBERLESTM TRIAC


型号：	T630-800W
厂家：	ST
描述：	6A SNUBBERLESTM TRIAC 6A SNUBBERLESTM TRIAC 三端双向交流开关
文件：	总5页 (文件大小：64K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

T620W

T630W

6A SNUBBERLESS™ TRIAC

MAIN FEATURES

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 and 800

20 to 30

DESCRIPTION

Based on ST’ Snubberless technology providing high

commutation performances, the T620-600W/800W &

T630-600W/800W are specially recommended for

use on inductive loads, thanks to their high commuta-

tion performances, such as rice cookers. They comply

with UL standards (ref. E81734).

ISOWATT220AB

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

I_T(RMS)

I_TSM

Parameter

Value

Unit

RMS on-state current (Full sine wave)

Tc= 105°C

t = 20ms

Non repetitive surge peak on-state

current (Full cycle, T_jinitial = 25°C )

F = 50Hz

F = 60Hz

t = 16.7ms

I²t

I²t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state current

F = 120 Hz

tp = 10ms

tp = 20µs

Tj = 125°C

A/µs

I_G= 2 x I_GT, tr ≤ 100ns

_DSM/V_RSMNon repetitive surge peak off-state

voltage

Tj = 25°C

V_DRM/V_RRM

+ 100

I_GM

Peak gate current

Tj = 125°C

P_G(AV)

Average gate power dissipation

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150 °C

- 40 to + 125

March 2004 - Ed: 2

1/5

T820W / T830W

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

V_D=12V R_L=30Ω

Quadrant

I-II-III

T620

T630

Unit

(1)

I_GT

MAX.

MIN.

MAX.

MIN.

V_GT

V_GD

I-II-III

1.3

0.2

V_D=V_DRMR_L=3.3kΩ Tj = 125°C

I_T= 100mA

I-II-III

(2)

I_H

V/µs

A/ms

I_L

I_G= 1.2I_GT

I - III

dV/dt ⁽²⁾

V_D=67% V_DRMGate open Tj = 125°C

300

3.3

500

4.5

(dI/dt)c ⁽²⁾Without snubber Tj = 125°C

STATIC CHARACTERISTICS

Symbol

Test Conditions

Value

Unit

(2)

V_TM

I_TM= 8.5 A tp = 380µs

Threshold voltage

Dynamic resistance

V_DRM= V_RRM

Tj = 25°C

MAX.

MAX

1.4

0.85

(2)

V_TO

Tj = 125°C

(2)

R_d

mΩ

I_DRM

I_RRM

Tj = 25°C

Tj = 125°C

µA

Note 1: Minimum IGT is guaranted at 5% of IGT max.

Note 2: For both polarities of A2 referenced to A1.

THERMAL RESISTANCES

Symbol

Rth(j-a)

Rth(j-c)

Parameter

Value

Unit

°C/W

Junction to ambient

Junction to case for A.C (360° conduction angle)

3.4

PRODUCT SELECTOR

Part Number

T620-600W

Voltage

600V

Sensitivity

20 mA

Type

Package

Snubberless

ISOWATT220AB

T620-800W

800V

20 mA

T630-600W

600V

30 mA

T630-800W

800V

30 mA

2/5

T820W / T830W

ORDERING INFORMATION

xx - x00

PACKAGE:

W: ISOWATT220AB

TRIAC SERIES

CURRENT: 6A

VOLTAGE:

600: 600V

800: 800V

SENSITIVITY:

20: 20mA

30: 30mA

OTHER INFORMATION

Part Number

T620-600W

T620-800W

T630-600W

T630-800W

Marking

T620600W

T620800W

T630600W

T630800W

Weight

2.3 g

Base quantity

Packing mode

Tube

2.3 g

Tube

2.3 g

Tube

2.3 g

Tube

Fig. 1: Maximum power dissipation versus RMS

on-state current.

Fig. 2: RMS on-state current versus case tem-

perature.

P(W)

IT(RMS)(A)

α=180°

180°

Tc(°C)

IT(RMS)(A)

2.5 3.0 3.5

100

125

0.0

0.5

1.0

1.5

2.0

4.0

4.5

5.0

5.5

6.0

Fig. 4: On-state characteristics (maximum val-

ues).

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

K=[Zth/Rth]

1.E+00

ITM(A)

100

Tj=25°C

Zth(j-c)

Tj=125°C

1.E-01

Zth(j-a)

1.E-02

Tj max. :

Vto = 0.85 V

Rd = 50 mΩ

VTM(V)

tp(s)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

3/5

T820W / T830W

Fig. 5: Surge peak on-state current versus number

of cycles.

Fig. 6: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and

corresponding value of I²t.

ITSM(A), I²t (A²s)

ITSM(A)

1000

Tj initial=25°C

t=20ms

Non repetitive

Tj initial=25°C

dI/dt limitation:

50A/µs

ITSM

100

Repetitive

Tc=105°C

I²t

Number of cycles

tp(ms)

0.01

100

1000

0.10

1.00

10.00

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus junc-

tion temperature (typical values).

Fig. 8: Relative variation of critical rate of decrease

of main current versus reapplied dV/dt (typical val-

ues).

IGT, IH, IL[Tj] / IGT, IH, IL[Tj=25°C]

3.0

(dI/dt)c [(dV/dt)c / Specified (dI/dt)c

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

2.5

2.0

IGT

1.5

IH & IL

1.0

0.5

0.2

Tj(°C)

dV/dt (V/µs)

0.0

0.1

1.0

10.0

100.0

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120 130

Fig. 9: Relative variation of critical rate of decrease

of main current versus junction temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]

Tj(°C)

100

125

4/5

T820W / T830W

PACKAGE MECHANICAL DATA

ISOWATT220AB

DIMENSIONS

Millimeters Inches

REF.

Min.

Max.

Min.

Max.

4.40

2.50

0.40

0.75

1.15

4.95

2.40

10.00

4.60

2.70

2.75

0.70

1.00

1.70

5.20

2.70

10.40

0.173

0.098

0.016

0.030

0.045

0.195

0.094

0.394

0.181

0.106

0.108

0.028

0.039

0.067

0.205

0.106

0.409

Diam

16.00 typ.

0.630 typ.

28.60

9.80

30.60

10.60

16.40

9.30

1.125

0.386

0.626

0.354

0.118

1.205

0.417

0.646

0.366

0.126

15.90

9.00

3.00

3.20

■

Cooling method : C

Recommended torque value : 0.55 m.N.

Maximum torque value : 0.70 m.N.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-

thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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5/5

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