T850H [STMICROELECTRONICS]

8 A - 600 V - 150°C H系列三端双向可控硅;
T850H
型号: T850H
厂家: ST    ST
描述:

8 A - 600 V - 150°C H系列三端双向可控硅

可控硅
文件: 总10页 (文件大小:137K)
中文:  中文翻译
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T835H, T850H  
Snubberless™  
High temperature 8 A Triacs  
Main characteristics  
A2  
Symbol  
Value  
Unit  
G
A2  
IT(RMS)  
VDRM/VRRM  
IGT  
8
A
V
A1  
A2  
600  
35 or 50  
mA  
G
G
A2  
A2  
Features  
A1  
TO-220AB  
T8xxH-6T  
A1  
2
D PAK  
Medium current Triac  
150° C max. T turn-off commutation  
T8xxH-6G  
j
Low thermal resistance with clip bonding  
Very high 3 quadrant commutation capability  
Packages are RoHS (2002/95/EC) compliant  
G
Applications  
A2  
A1  
Especially designed to operate in high power  
density or universal motor applications such as  
vacuum cleaner and washing machine drum  
motor, these 8 A triacs provide a very high  
switching capability up to junction temperatures of  
150° C.  
TO-220AB Insulated  
T8xxH-6I  
Order codes  
The heatsink can be reduced, compared to  
traditional triacs, according to the high  
performance at given junction temperatures.  
Part Numbers  
Marking  
T835H-6G  
T850H-6G  
T835H-6G-TR  
T850H-6G-TR  
T835H-6T  
T835H 6G  
T850H 6G  
T835H 6G  
T850H 6G  
T835H 6T  
T850H 6T  
T835H 6I  
T850H 6I  
Description  
Available in through-hole or surface mount  
packages, the T835H and T850H triac series are  
suitable for general purpose mains power AC  
switching.  
T850H-6T  
T835H-6I  
T850H-6I  
TM: Snubberless is a trademark of STMicroelectronics  
April 2007  
Rev 1  
1/10  
www.st.com  
10  
Characteristics  
T835H, T850H  
1
Characteristics  
Table 1.  
Absolute Maximum Ratings  
Symbol  
Parameter  
D2PAK, TO-220AB Tc = 135° C  
Value  
Unit  
IT(RMS)  
RMS on-state current (full sine wave)  
8
A
TO-220AB Ins  
F = 50 Hz  
Tc = 125° C  
t = 20 ms  
80  
84  
42  
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25° C)  
ITSM  
A
F = 60 Hz  
t = 16.7 ms  
²
²
²
I t  
I t Value for fusing  
tp = 10 ms  
A s  
Critical rate of rise of on-state current  
IG = 2 x IGT , tr 100 ns  
dI/dt  
F = 120 Hz  
Tj = 150° C  
Tj = 25° C  
50  
A/µs  
V
Non repetitive surge peak off-state  
voltage  
V
DRM/VRRM  
+ 100  
VDSM/VRSM  
tp = 10 ms  
tp = 20 µs  
IGM  
Peak gate current  
Tj = 150° C  
Tj = 150° C  
4
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 150  
° C  
Table 2.  
Symbol  
Electrical Characteristics (Tj = 25° C, unless otherwise specified)  
Value  
Test Conditions  
Quadrant  
Unit  
T835H  
T850H  
(1)  
IGT  
I - II - III  
I - II - III  
I - II - III  
MAX.  
MAX.  
MIN.  
35  
50  
mA  
V
VD = 12 V RL = 33 Ω  
VGT  
1.0  
VGD  
VD = VDRM, RL = 3.3 kΩ  
0.15  
V
(2)  
IH  
IT = 500 mA  
MAX.  
35  
50  
75  
60  
mA  
I - III  
II  
IL  
IG = 1.2 IGT  
MAX.  
mA  
80  
110  
1500  
14  
dV/dt (2)  
VD = 67% VDRM, gate open, Tj = 150° C  
MIN.  
MIN.  
1000  
11  
V/µs  
(dI/dt)c (2) Without snubber, Tj = 150° C  
A/ms  
1. minimum I  
GT  
is guaranted at 20% of I  
max.  
GT  
2. for both polarities of A2 referenced to A1.  
2/10  
T835H, T850H  
Characteristics  
Table 3.  
Symbol  
Static Characteristics  
Test Conditions  
Tj = 25° C  
Value  
Unit  
(1)  
(1)  
(1)  
VT  
Vt0  
Rd  
ITM = 11 A, tp = 380 µs  
Threshold voltage  
MAX.  
MAX.  
MAX.  
MAX.  
MAX.  
MAX.  
MAX.  
1.5  
0.80  
52  
V
V
Tj = 150° C  
Tj = 150° C  
Tj = 25° C  
Tj = 150° C  
Dynamic resistance  
mΩ  
µA  
5
VDRM = VRRM  
3.1  
2.5  
2.0  
IDRM  
(2)  
IRRM  
VD/VR = 400 V (at peak mains voltage) Tj = 150° C  
VD/VR = 200 V (at peak mains voltage) Tj = 150° C  
mA  
1. for both polarities of A2 referenced to A1.  
2. tp = 380 µs.  
Table 4.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
D2PAK / TO-220AB  
TO-220AB Ins  
D2PAK  
1.85  
3.7  
45  
Rth(j-c)  
Junction to case (AC)  
Junction to ambient  
° C/W  
S = 1 cm2  
Rth(j-a)  
TO-220AB / TO-220AB Ins  
60  
Figure 1.  
Maximum power dissipation versus Figure 2.  
RMS on-state current (full cycle)  
RMS on-state current versus case  
temperature (full cycle)  
I
T(RMS) (A)  
P(W)  
10  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TO-220AB/D²PAK  
α=180 °  
TO-220AB  
Insulated  
180°  
TC(°C)  
IT(RMS)(A)  
4
0
1
2
3
5
6
7
8
0
25  
50  
75  
100  
125  
150  
3/10  
Characteristics  
T835H, T850H  
Figure 3.  
RMS on-state current versus  
Figure 4.  
Variation of thermal impedance  
ambient temperature (Epoxy  
printed circuit board FR4,  
copper thickness = 35 µm)  
versus pulse duration  
I
T(RMS) (A)  
Zth(°C/W)  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  
α=180 °  
Zth(j-a)  
PAK  
SCU=1 cm²  
Zth(j-c)  
tP(s)  
Tamb(°C)  
75  
1.0E-03  
1.0E-02  
1.0E-01  
1.0E+00 1.0E+01  
1.0E+02 1.0E+03  
0
25  
50  
100  
125  
150  
Figure 5.  
On-state characteristics (maximum Figure 6.  
values)  
Surge peak on-state current versus  
number of cycles  
ITM(A)  
100  
I
TSM(A)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
t=20ms  
Non repetitive  
Tj initial=25 °C  
One cycle  
Tj=150 °C  
10  
Repetitive  
Tc=125 °C  
Tj=25 °C  
Tj max. :  
Vt0 = 0.80 V  
Rd = 52 mΩ  
VTM(V)  
2.0 2.5  
Number of cycles  
1
1
10  
100  
1000  
0.0  
0.5  
1.0  
1.5  
3.0  
3.5  
4.0  
4.5  
Figure 7.  
Non-repetitive surge peak on-state Figure 8.  
current for a sinusoidal pulse with  
Relative variation of gate trigger  
current, holding current and  
latching current versus junction  
temperature (typical values)  
width t < 10 ms and corresponding  
p
2
value of I t  
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]  
I
TSM(A), I²t (A²s)  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
10000  
1000  
100  
Tj initial=25 °C  
dI/dt limitation: 50 A/µs  
IGT  
IH & IL  
ITSM  
I²t  
tP(ms)  
Tj(°C)  
60  
10  
0.01  
0.10  
1.00  
10.00  
-40  
-20  
0
20  
40  
80  
100  
120  
140  
160  
4/10  
T835H, T850H  
Characteristics  
Figure 9.  
Relative variation of critical rate of Figure 10. Relative variation of critical rate of  
decrease of main current (dI/dt)c  
versus reapplied (dV/dt)c  
(typical values)  
decrease of main current versus  
junction temperature  
(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]  
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
8
7
6
5
4
3
2
1
0
(dV/dt)C (V/µs)  
Tj(°C)  
0.1  
1.0  
10.0  
100.0  
25  
50  
75  
100  
125  
150  
Figure 11. Leakage current versus junction  
temperature for different values of  
blocking voltage (typical values)  
Figure 12. Variation of thermal resistance  
junction to ambient versus copper  
surface under tab (Epoxy printed  
circuit board FR4,  
copper thickness = 35 µm)  
Rth(j-a)(°C/W)  
IDRM/IRRM(µA)  
1.0E+04  
80  
70  
60  
50  
40  
30  
20  
10  
0
PAK  
VDRM=VRRM=600 V  
1.0E+03  
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
VDRM=VRRM=400 V  
VDRM=VRRM=200 V  
SCU(cm²)  
Tj(°C)  
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
5/10  
Ordering information  
T835H, T850H  
2
Ordering information  
T 8 xx H - 6 y -TR  
Triac series  
Current  
8 = 8 A  
Sensitivity  
35 = 35 mA  
50 = 50 mA  
High temperature  
Voltage  
6 = 600 V  
Package  
2
G = D PAK  
T = TO-220AB  
I = TO-220AB Ins  
Packing  
2
Blank = Tube (D PAK, TO-220AB)  
2
-TR = Tape and reel (D PAK)  
6/10  
T835H, T850H  
Package mechanical data  
3
Package mechanical data  
Epoxy meets UL94, V0  
Recommended torque 0.4 to 0.6 Nm  
2
Table 5.  
D PAK dimensions  
Dimensions  
Millimeters  
Ref.  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
4.30  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
A
A1 2.49  
A2 0.03  
E
C2  
L2  
B
0.70  
B2 1.25 1.40  
0.45  
C2 1.21  
D
0.048 0.055  
L
C
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
L3  
A1  
B2  
B
R
C
D
E
G
L
8.95  
10.00  
4.88  
G
A2  
2mm min.  
FLAT ZONE  
15.00  
L2 1.27  
L3 1.40  
R
V2  
0.40  
0.016  
V2  
0°  
8°  
0°  
8°  
Figure 13. Footprint (dimensions in mm)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
7/10  
Package mechanical data  
T835H, T850H  
Table 6.  
TO-220AB and TO-220AB Ins dimensions  
Dimensions  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
Ref.  
Inches  
A
15.20  
15.90 0.598  
0.625  
a1  
3.75  
0.147  
C
B
a2 13.00  
10.00  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
Ø I  
b2  
B
L
F
b1 0.61  
b2 1.23  
A
I4  
C
4.40  
l3  
c1 0.49  
c2 2.40  
c2  
a1  
l2  
a2  
e
F
2.40  
6.20  
M
c1  
b1  
ØI 3.75  
e
I4 15.80 16.40 16.80 0.622 0.646 0.661  
L
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
l2  
l3  
M
2.60  
0.102  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com.  
8/10  
T835H, T850H  
Ordering Information  
4
Ordering Information  
Ordering type  
Marking  
Package  
Weight  
Base qty Delivery mode  
T8xxH-6G  
T8xxH-6G-TR  
T8xxH-6T  
T8xxH 6G  
T8xxH 6G  
T8xxH 6T  
T8xxH 6I  
D2PAK  
D2PAK  
1.5 g  
1.5 g  
2.3 g  
2.3 g  
50  
1000  
50  
Tube  
Tape and reel  
Tube  
TO-220AB  
TO-220AB Ins  
T8xxH-6I  
50  
Tube  
5
Revision history  
Date  
Revision  
Description of Changes  
17-Apr-2007  
1
First issue  
9/10  
T835H, T850H  
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10/10  

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