TDA-7296 [STMICROELECTRONICS]
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY; 70V - 60W DMOS音频放大器，具有静音/ ST- BY
| 型号： | TDA-7296 |
| 厂家： | 
ST |
| 描述： | 70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY |
| 文件： | 总15页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TDA7296
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
1 FEATURES
Figure 1. Package
■ MULTIPOWER BCD TECHNOLOGY
■ VERY HIGH OPERATING VOLTAGE RANGE
( 35V)
Multiwatt15V
Multiwatt15H
(Short Leads)
■ DMOS POWER STAGE
■ HIGH OUTPUT POWER (UP TO 60W MUSIC
POWER)
Table 1. Order Codes
■ MUTING/STAND-BY FUNCTIONS
■ NO SWITCH ON/OFF NOISE
■ NO BOUCHEROT CELLS
■ VERY LOW DISTORTION
■ VERY LOW NOISE
Part Number
TDA7296
Package
Multiwatt15V
TDA7296HS
Multiwatt15H (Short Leads)
Thanks to the wide voltage range and to the high
out current capability it is able to supply the high-
est power into both 4Ω and 8Ω loads even in pres-
ence of poor supply regulation, with high Supply
Voltage Rejection.
■ SHORT CIRCUIT PROTECTION
■ THERMAL SHUTDOWN
2 DESCRIPTION
The built in muting function with turn on delay sim-
plifies the remote operation avoiding switching on-
off noises.
The TDA7296 is a monolithic integrated circuit in
Multiwatt15 package, intended for use as audio
class AB amplifier in Hi-Fi field applications (Home
Stereo, self powered loudspeakers, Topclass TV).
Figure 2. Typical Application and Test Circuit
C7 100nF
+Vs C6 1000µF
R3 22K
+Vs
7
+PWVs
13
C2
22µF
R2
680Ω
IN-
2
3
-
14
6
OUT
C1 470nF
IN+
+
C5
22µF
R1 22K
IN+MUTE
4
BOOT-
STRAP
R6
2.7Ω
R5 10K MUTE
STBY
10
9
VM
MUTE
STBY
1
THERMAL
SHUTDOWN
S/C
PROTECTION
C10
100nF
VSTBY
R4 22K
8
15
STBY-GND
-Vs
-PWVs
C3 10µF
C4 10µF
C9 100nF
C8 1000µF
D93AU011
-Vs
Note: The Boucherot cell R6, C10, normally not necessary for a stable operation it could
be needed in presence of particular load impedances at VS < 25V.
Rev. 10
1/15
February 2005
TDA7296
Figure 3. Pin Connection
Table 2. Absolute Maximum Ratings
Symbol
VS
Parameter
Value
35
Unit
V
Supply Voltage (No Signal)
IO
Output Peak Current
5
A
Ptot
Power Dissipation Tcase = 70°C
Operating Ambient Temperature Range
Storage and Junction Temperature
50
W
Top
0 to 70
150
°C
°C
Tstg, Tj
Table 3. Thermal Data
Symbol
Parameter
Typ.
Max
Unit
Rth j-case
Thermal Resistance Junction-case
1
1.5
°C/W
Figure 4. Block Diagram
2/15
TDA7296
Table 4. Electrical Characteristcs (Refer to the Test Circuit VS = 24V, RL = 8Ω, GV = 30dB; Rg = 50Ω;
Tamb = 25°C, f = 1 kHz; unless otherwise specified).
Symbol
Parameter
Supply Range
Test Condition
Min.
10
Typ.
Max.
35
Unit
V
VS
Iq
Quiescent Current
Input Bias Current
20
30
65
mA
nA
I
500
b
VOS
IOS
PO
Input Offset Voltage
Input Offset Current
-10
10
mV
nA
-100
100
RMS Continuous Output
Power
d = 05%
VS = 24V, RL = 8Ω;
VS = 21V, RL = 6Ω;
VS = 18V, RL = 4Ω;
27
27
27
30
30
30
W
W
W
Music Power (RMS)
d = 10%
∆t = 1s (*)
VS = 29V, RL = 8Ω;
VS = 24V, RL = 6Ω;
VS = 22V, RL = 4Ω;
60
60
60
W
W
W
d
Total Harmonic Distortion (**)
PO = 5W; f = 1kHz
0.005
%
0.1
0.1
PO = 0.1 to 20W; f = 20Hz to 20kHz
VS = 18V, RL = 4Ω;
0.01
%
%
P
P
O = 5W; f = 1kHz
O = 0.1 to 20W; f = 20Hz to 20kHz
SR
GV
GV
eN
Slew Rate
7
10
80
30
1
V/µs
dB
Open Loop Voltage Gain
Closed Loop Voltage Gain (1)
Total Input Noise
24
40
5
dB
A = curve
µV
f = 20Hz to 20kHz
PO =1W
2
µV
fL ,fH
frequency response (-3dB)
Input Resistance
20Hz to 20kHz
Ri
SVR
TS
100
60
kΩ
dB
°C
Supply Voltage Rejection
Thermal Shutdown
f = 100Hz; Vripple = 0.5Vrms
75
145
STAND-BY FUNCTION (Ref: -Vs or GND)
VST on
VST off
Stand-by on Threshold
Stand-by off Threshold
1.5
V
V
3.5
70
ATTst-by Stand-by Attenuation
90
dB
mA
Iq st-by
Quiescent Current @ Stand-by
1
3
MUTE FUNCTION (Ref: -Vs ro GND)
VMon
VMoff
Mute on Threshold
Mute off Threshold
1.5
V
V
3.5
60
ATTmute Mute AttenuatIon
80
dB
Note (*):
MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non linearity)
1 sec after the application of a sinusoidal input signal of frequency 1KHz.
Note (**): Tested with optimized Application Board (see fig.5)
3/15
TDA7296
Figure 5. P.C.B. and Components Layout of the Circuit of figure 2.
Note:
The Stand-by and Mute functions can be referred either to GND or -VS.
On the P.C.B. is possible to set both the configuration through the jumper J1.
4/15
TDA7296
3 APPLICATION SUGGESTIONS
(see Test and Application Circuits of the Fig. 2)
The recommended values of the external components are those shown on the application circuit of Figure
2. Different values can be used; the following table can help the designer.
SUGGESTED
VALUE
LARGER THAN
SUGGESTED
SMALLER THAN
SUGGESTED
COMPONENTS
PURPOSE
R1 (*)
22k
Input Resistance
Increase Input
Impedance
Decrease Input
Impedance
R2
R3 (*)
R4
680Ω
22k
Closed Loop Gain
Set to 30db (**)
Decrease of Gain
Increase of Gain
Increase of Gain
Decrease of Gain
22k
St-by Time Constant
Mute Time Constant
Input DC Decoupling
Larger St-by
ON/OFF Time
Smaller St-by ON/OFF
Time; Pop Noise
R5
C1
C2
C3
C4
C5
10k
0.47µF
22µF
10µF
10µF
22µF
Larger Mute
ON/OFF Time
Smaller Mute
ON/OFF Time
Higher Low Frequency
Cutoff
Feedback DC
Decoupling
Higher Low Frequency
Cutoff
Mute Time Constant
St-by Time Constant
Bootstrapping
Larger Mute
ON/OFF Time
Smaller Mute ON/OFF
Time
Larger St-by
ON/OFF Time
Smaller St-by ON/OFF
Time; Pop Noise
Signal Degradation at
Low Frequency
C6, C8
C7, C9
1000µF
0.1µF
Supply Voltage Bypass
Supply Voltage Bypass
Danger of Oscillation
Danger of Oscillation
(*) R1 = R3 for pop optimization
(**) Closed Loop Gain has to be ≥ 24dB
5/15
TDA7296
4 TYPICAL CHARACTERISTICS
(Application Circuit of fig 2 unless otherwise specified)
Figure 6. : Output Power vs. Supply Voltage.
Figure 9. Distortion vs. Output Power
Figure 10. Distortion vs. Frequency
Figure 11. Distortion vs. Frequency
Figure 7. Distortion vs. Output Power
Figure 8. Output Power vs. Supply Voltage
6/15
TDA7296
Figure 12. Quiescent Current vs. Supply
Voltage
Figure 15. St-by Attenuation vs. Vpin9
Figure 13. Supply Voltage Rejection vs.
Frequency
Figure 16. Power Dissipation vs. Output Power
Figure 14. Mute Attenuation vs. Vpin10
Figure 17. Power Dissipation vs. Output Power
7/15
TDA7296
5 INTRODUCTION
In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers
able to match, with a low cost the performance obtained from the best discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made extremely dif-
ficult by the occurence of 2nd breakdown phenomenon. It limits the safe operating area (SOA) of the pow-
er devices, and as a consequence, the maximum attainable output power, especially in presence of highly
reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and
layout complexity due to the need for sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are immune from sec-
ondary breakdown is highly desirable. The device described has therefore been developed in a mixed bi-
polar-MOS high voltage technology called BCD 80.
5.1 Output Stage
The main design task one is confronted with while developing an integrated circuit as a power operational
amplifier, independently of the technology used, is that of realising the output stage. The solution shown
as a principle schematic by Fig 18 represents the DMOS unity-gain output buffer of the TDA7296.
This large-signal, high-power buffer must be capable of handling extremely high current and voltage levels
while maintaining acceptably low harmonic distortion and good behaviour over frequency response; more-
over, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above requirements,
allowing a simple and effective quiescent current setting. Proper biasing of the power output transistors
alone is however not enough to guarantee the absence of crossover distortion. While a linearization of the
DC transfer characteristic of the stage is obtained, the dynamic behaviour of the system must be taken
into account.
A significant aid in keeping the distortion contributed by the final stage as low as possible is provided by
the compensation scheme, which exploits the direct connection of the Miller capacitor at the amplifier’s
output to introduce a local AC feedback path enclosing the output stage itself.
5.2 Protections
In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the
device from short circuit or overload conditions.
Due to the absence of the 2nd breakdown phenomenon, the SOA of the power DMOS transistors is de-
limited only by a maximum dissipation curve dependent on the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this
device combines a conventional SOA protection circuit with a novel local temperature sensing technique
which " dynamically" controls the maximum dissipation.
Figure 18. Principle Schematic of a DMOS Unity-gain Buffer.
8/15
TDA7296
Figure 19. Turn ON/OFF Suggested Sequence
+Vs
(V)
+35
-35
-Vs
V
(mV)
IN
V
ST-BY
5V
5V
PIN #9
(V)
V
MUTE
PIN #10
(V)
I
P
(mA)
V
OUT
(V)
OFF
ST-BY
PLAY
ST-BY
OFF
MUTE
MUTE
D93AU013
In addition to the overload protection described above, the device features a thermal shutdown circuit
which initially puts the device into a muting state (@ Tj = 145°C) and then into stand-by (@ Tj = 150°C).
Full protection against electrostatic discharges on every pin is included.
5.3 Other Features
The device is provided with both stand-by and mute functions, independently driven by two CMOS logic
compatible input pins.
The circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid
any kind of uncontrolled audible transient at the output.
The sequence that we recommend during the ON/OFF transients is shown by Figure 19.
The application of figure 20 shows the possibility of using only one command for both st-by and mute func-
tions. On both the pins, the maximum applicable range corresponds to the operating supply voltage.
9/15
TDA7296
Figure 20. Single Signal ST-BY/MUTE Control Circuit
MUTE
STBY
20K
MUTE/
ST-BY
10K
30K
10µF
10µF
1N4148
D93AU014
6 BRIDGE APPLICATION
Another application suggestion is the BRIDGE configuration, where two TDA7296 are used, as shown by
the schematic diagram.
In this application, the value of the load must not be lower than 8 Ohm for dissipation and current capability
reasons. A suitable field of application includes HI-FI/TV subwoofers realizations. The main advantages
offered by this solution are:
– High power performances with limited supply voltage level.
– Considerably high output power even with high load values (i.e. 16 Ohm).
The characteristics shown by figures 23 and 24, measured with loads respectively 8 Ohm and 16 Ohm.
With Rl= 8 Ohm, Vs = 18V the maximum output power obtainable is 60W, while with Rl=16 Ohm, Vs =
24V the maximum Pout is 60W.
Figure 21. Bridge Application Circuit
+Vs
0.22µF
2200µF
7
13
6
3
22µF
22K
Vi
+
-
14
0.56µF
22K
1
4
2
680
ST-BY/MUTE
20K
22µF
10
9
9
15
8
8
22K
-Vs
0.22µF
2200µF
1N4148
15
10
3
10K
30K
22µF
6
22µF
+
-
14
0.56µF
22K
22K
680
1
4
2
7
13
D93AU015A
10/15
TDA7296
Figure 22. Frequency Response of the Bridge
Application
Figure 24. Distortion vs. Output Power
Figure 23. Distortion vs. Output Power
11/15
TDA7296
Figure 25. Multiwatt15V Mechanical Data & Package Dimensions
mm
inch
DIM.
MIN. TYP. MAX. MIN.
TYP. MAX.
0.197
OUTLINE AND
MECHANICAL DATA
A5
B
2.65
0.104
C
1.6
0.063
D
1
0.039
E
0.49
0.66
1.02
0.55 0.019
0.75 0.026
0.022
F
0.030
G
1.27
1.52 0.040 0.050 0.060
G1
H1
H2
L
17.53 17.78 18.03 0.690 0.700 0.710
19.6
0.772
20.2
0.795
21.9
21.7
22.2
22.1
22.5 0.862 0.874 0.886
22.5 0.854 0.87 0.886
L1
L2
L3
L4
L7
M
17.65
18.1 0.695
0.713
17.25 17.5 17.75 0.679 0.689 0.699
10.3
2.65
4.25
4.73
1.9
10.7
10.9 0.406 0.421 0.429
2.9 0.104 0.114
4.55
5.08
4.85 0.167 0.179 0.191
5.43 0.186 0.200 0.214
M1
S
2.6
2.6
0.075
0.075
0.102
0.102
0.152
Multiwatt15 (Vertical)
S1
Dia1
1.9
3.65
3.85 0.144
0016036 J
12/15
TDA7296
Figure 26. Multiwatt15 Horizontal (Short leads) Mechanical Data & Package Dimensions
mm
inch
DIM.
OUTLINE AND
MECHANICAL DATA
MIN. TYP. MAX. MIN.
TYP. MAX.
0.197
A
B
5
2.65
1.6
0.104
C
0.063
E
0.49
0.66
1.02
0.55 0.019
0.75 0.026
0.022
F
0.030
G
1.27
1.52 0.040 0.050 0.060
G1
H1
H2
L1
L2
L3
L4
L5
L7
R
17.53 17.78 18.03 0.690 0.700 0.709
19.6
19.6
20.2 0.772
20.2 0.772
0.795
0.795
17.80 18.00 18.20 0.701 0.709 0.717
2.54 0.100
17.25 17.5 17.75 0.679 0.689 0.699
10.3
2.70
2.65
10.7
3.00
10.9 0.406 0.421 0.429
3.30 0.106 0.118 0.130
2.9
0.104
0.114
1.5
0.059
S
1.9
1.9
2.6
2.6
0.075
0.075
0.102
0.102
0.152
Multiwatt15 H (Short leads)
S1
Dia1
3.65
3.85 0.144
V
V
V
V
R
R
A
B
C
V
E
L5
L2
L1
L3
H2
L4
L7
N
F
H1
G1
H2
Diam 1
G
S
MW15HME
R1
P
S1
0067558 E
13/15
TDA7296
Table 5. Revision History
Date
Revision
Description of Changes
First Issue in EDOCS DMS
January 2004
8
9
September 2004
February 2005
Added Package Multiwatt15 Horizontal (Short leads)
Corrected mistyping error in Table 2.
10
14/15
TDA7296
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
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