TDA2008 [STMICROELECTRONICS]
12W AUDIO AMPLIFIER Vs = 22V, RL= 4ohm; 12W音频放大器VS = 22V ， RL = 4欧姆
| 型号： | TDA2008 |
| 厂家： | 
ST |
| 描述： | 12W AUDIO AMPLIFIER Vs = 22V, RL= 4ohm |
| 文件： | 总9页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TDA2008
12W AUDIO AMPLIFIER (V = 22V, R = 4Ω)
s
L
DESCRIPTION
The TDA2008 is a mololithic class B audio power
amplifier in Pentawatt package designed for driv-
inglowimpedenceloads(down to 3.2Ω). Thedivice
provides a high outputcurrent capability(up to 3A),
very low harmonic and crossover distortion.
In addition,the deviceoffers the following features:
– very low number of external components;
– assembly ease, due to Pentawatt power
packagewith no electrical insulationsre-
quirements;
Pentawatt
– space and cost saving;
– high reliability;
ORDERING NUMBER : TDA 2008V
– flexibility in use;
– thermal protection.
TYPICAL APPLICATION CIRCUIT
March 1993
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TDA2008
PIN CONNECTION (top view)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Vs
Io
DC supply voltage
28
V
A
Output peak current (repetitive)
3
Io
Output peak current ( non repetitive)
4
20
A
Ptot
W
°C
Power dissipation at Tcase = 90°C
Tstg, Tj Storage and junction temperature
- 40 to 150
SCHEMATIC DIAGRAM
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TDA2008
DC TEST CIRCUIT
AC TEST CIRCUIT
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TDA2008
THERMAL DATA
Symbol
Parameter
Thermal resistance junction-case
Value
Unit
Rth-j-case
max
3
°C/W
ELECTRICAL CHARACTERISTICS ( Refer to the test circuit, Vs = 18V, Tamb = 25 °C unless otherwise
specified)
Symbol
Parameter
Supply voltage
Test conditions
Min.
Typ.
Max.
Unit
Vs
Vo
10
28
V
V
Quiescent output voltage
(pin 4)
10.5
65
Id
Quiescent drain current
(pin 5)
115
mA
Po
Output power
d = 10%
8
W
W
RL = 8Ω
f = 1 KHz
RL = 4Ω
10
12
Vi(RMS) Input saturation voltage
300
mV
Vi
Input sensitivity
f = 1 KHz
Po = 0.5W
Po = 8W
Po = 0.5W
Po = 12W
RL = 8Ω
RL = 8Ω
RL = 4Ω
RL = 4Ω
20
80
14
70
mV
mV
mV
mV
Po = 1W
RL = 4Ω
B
d
Frequency response
(-3 dB)
40 to 15,000
Hz
Distortion
f = 1 KHz
Po = 0.05 to 4W RL = 8Ω
0.12
0.12
1
1
%
%
Po = 0.05 to 6W
RL = 4Ω
Ri
Gv
Input resistance (pin 1)
Voltage gain (open loop)
Voltage gain (closed loop)
Input noise voltage
f = 1 KHz
70
150
80
40
1
KΩ
dB
dB
µV
pA
dB
f = 1 KHz
RL = 8Ω
Gv
39.5
40.5
5
eN
BW = 22Hz to 22 KHz
iN
Input noise current
60
36
200
V
ripple = 0.5
SVR
Supply voltage rejection
f = 100 Hz
30
Rg = 10KΩ
RL = 4Ω
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TDA2008
APPLICATION INFORMATION
Figure 1. Typical application circuit
Figure 2. P.C. board and component layout for
the circuit of fig. 1 (1:1 scale)
Figure 3.25W bridge configurationapplica- tion
circuit (°)
Figure 4. P.C. board and component layout for the
circuit of fig. 3 (1:1 scale)
(°) The value of the capacitorr C3 and C4 are different to optimize
the SVR (Typ. = 40 dB)
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TDA2008
Figure 5. Quiescent current
vs. supply voltage
Figure 6. Output voltage vs.
supply voltage
Figure 7. Output power vs.
supply voltage
Figure 8. Distortion vs.
frequency
Figure 10. Maximum al- lowable
power dissipation vs. ambient
temperature
Figure 9. Supply voltage
rejection vs. frequency
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TDA2008
PRACTICAL CONSIDERATIONS
Printed circuit board
The layout shown in Fig. 2 is recommended. If
differentlayoutsareused,thegroundpointsof input
1 and input 2 must be well decoupled from the
ground of the output through which a rather high
current flows.
package and the heat-sink.Pin length should be as
short as possible. The soldering temperature must
not exceed 260°C for 12 seconds.
Application suggestions
The recommended component values are those
shown in the application circuits of Fig. 1. Different
values can be used. The following table is intended
to aid the car-radio designer.
Assembly suggestion
No electrical insulation is needed between the
Recommended
Larger than
recommended value
Smaller than
recommended value
Component
Purpose
value
C1
2.2µF
Input DC decoupling
Noise at switch-on,
switch-off
C2
C3
C4
Ripple rejection.
Supply by passing.
Output coupling.
Degradation of SVR.
Danger of oscillation.
470µF
0.1µF
Higher low frequency
cutoff.
1000µF
C5
0.1µF
Frequency stability.
Setting of gain. (*)
Danger of oscillation
at high frequencies
with inductive loads.
R1
R2
R3
Increase of drain
current.
(Gv - 1) • R2
2.2Ω
Setting of gain and
SVR.
Degradation of SVR.
1Ω
Frequency stability.
Danger of oscillation
at high frequencies
with inductive loads.
(*) The closed loop gain must be higher than 26dB.
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TDA2008
PENTAWATT PACKAGE MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.8
MIN.
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
A
C
1.37
2.8
D
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
D1
E
1.35
0.55
1.05
1.4
F
F1
G
3.4
6.8
0.134
0.268
G1
H2
H3
L
10.4
10.4
10.05
0.396
17.85
15.75
21.4
0.703
0.620
0.843
0.886
L1
L2
L3
L5
L6
L7
M
22.5
2.6
15.1
6
3
0.102
0.594
0.236
0.118
0.622
0.260
15.8
6.6
4.5
4
0.177
0.157
M1
Dia
3.65
3.85
0.144
0.152
L
L1
L2
L3
L5
Dia.
L7
L6
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TDA2008
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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