TDE1897CFPT [STMICROELECTRONICS]

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型号：	TDE1897CFPT
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TDE1897C

TDE1898C

0.5A HIGH-SIDE DRIVER

INDUSTRIAL INTELLIGENT POWER SWITCH

PRELIMINARY DATA

0.5A OUTPUT CURRENT

MULTIPOWER BCD TECHNOLOGY

18V TO 35V SUPPLY VOLTAGE RANGE

INTERNAL CURRENT LIMITING

THERMAL SHUTDOWN

OPEN GROUND PROTECTION

INTERNAL NEGATIVE VOLTAGE CLAMPING

TO V_S- 45V FOR FAST DEMAGNETIZATION

DIFFERENTIAL INPUTS WITH LARGE COM-

MON MODE RANGE AND THRESHOLD

HYSTERESIS

UNDERVOLTAGE LOCKOUTWITH HYSTERESIS

OPEN LOAD DETECTION

Minidip

SIP9

SO20

ORDERING NUMBERS:

TDE1898CSP

TDE1897CDP

TDE1898CDP

TDE1897CFP

TDE1898CFP

TWO DIAGNOSTIC OUTPUTS

OUTPUT STATUS LED DRIVER

ogy, for driving inductive or resistive loads. An in-

ternal Clamping Diode enables the fast demag-

netization of inductive loads.

Diagnostic for CPU feedback and extensive use

of electrical protections make this device inher-

ently indistructible and suitable for general pur-

pose industrial applications.

DESCRIPTION

The TDE1897C/TDE1898C is a monolithic Intelli-

gent Power Switch in Multipower BCD Technol-

BLOCK DIAGRAM

October 1995

1/12

TDE1897C - TDE1898C

PIN CONNECTIONS (Top view)

Minidip

SO20

SIP9

ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)

Symbol

Parameter

Supply Voltage (Pins 3 - 1) (T_W< 10ms)

Supply to Output Differential Voltage. See also V_Cl3-2 (Pins 3 - 2)

Input Voltage (Pins 7/8)

Value

Unit

V_S

V_S– V_O

V_i

internally limited

-10 to VS +10

V_i

Differential Input Voltage (Pins 7 - 8)

I_i

Input Current (Pins 7/8)

I_O

Output Current (Pins 2 - 1). See also ISC

Energy from Inductive Load (T_J= 85°C)

Power Dissipation. See also THERMAL CHARACTERISTICS.

internally limited

200

E_l

°C

P_tot

T_op

T_stg

internally limited

-25 to +85

-55 to 150

Operating Temperature Range (T_amb

)

Storage Temperature

THERMAL DATA

Symbol

Description

Minidip

Sip

SO20

Unit

°C/W

R_{th j-case}

R_{th j-amb}

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

100

2/12

TDE1897C - TDE1898C

ELECTRICAL CHARACTERISTICS (V_S= 24V; T_amb= –25 to +85°C,unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

V_smin

Supply Voltage for Valid

Diagnostics

I_diag> 0.5mA @ V_dg1= 1.5V

V_s3

I_q3

Supply Voltage (operative)

Quiescent Current

V_il

V_ih

2.5

4.5

7.5

_out= I_os= 0

V_sth1

Undervoltage Threshold 1

Undervoltage Threshold 2

Supply Voltage Hysteresis

Short Circuit Current

(See fig. 1); T_amb= 0 to +85°C

(See fig. 1); Tamb = 0 to +85°C

(See fig. 1); T_amb= 0 to +85°C

V_S= 18 to 35V; R_L= 1Ω

V_sth2

V_shys

I_sc

15.5

0.4

0.75

1.5

V_don3-2

Output Voltage Drop

@ I_out= 625mA; T_j= 25°C

@ I_out= 625mA; T_j= 125°C

250

400

425

600

I_oslk

V_ol

Output Leakage Current

Low State Out Voltage

@ V_i= V_il, V_o= 0V

300

1.5

µA

@ V_i= V_il; R_L= ∞

0.8

1.4

V_cl3-2

I_old

Internal Voltage Clamp (V_S- V_O) @ I_O= -500mA

Open Load Detection Current

V_i= V_ih; T_amb= 0 to +85°C

V_id7-8

Common Mode Input Voltage

Range (Operative)

V_S= 18 to 35V,

V_S= V_id7-8 < 37V

–7

I_ib7-8

V_ith7-8

V_iths7-8

Input Bias Current

V_i= –7 to 15V; –In = 0V

V+In > V–In

–700

0.8

700

µA

Input Threshold Voltage

Input Threshold Hysteresis

Voltage

V+In > V–In

400

R_id7-8

Diff. Input Resistance

@ 0 < +In < +16V; –In = 0V

@ –7 < +In < 0V; –In = 0V

400

150

KΩ

_ilk7-8

Input Offset Current

V+In = V–In

0V < V_i<5.5V

+Ii

–Ii

–20

–75

+20

+50

µA

–25

–In = GND

0V < V+In <5.5V

+Ii

+10

–125

µA

–Ii –250

+In = GND

0V < V–In <5.5V

+Ii –100

–30

–15

µA

–Ii

–50

_oth12

_oth22

_ohys2

Output Status Threshold 1

Voltage

(See fig. 1)

Output Status Threshold 2

Voltage

0.3

Output Status Threshold

Hysteresis

0.7

I_osd4

Output Status Source Current

V_out> V_oth1, V_os= 2.5V

V_s– V_os@ I_os= 2mA;

V_osd3-4

Active Output Status Driver

Drop Voltage

_amb= -25 to 85°C

I_oslk

Output Status Driver Leakage

Current

V_out< V_oth2, V_os= 0V

V_S= 18 to 35V

µA

V_dgl5/6

I_dglk5/6

Diagnostic Drop Voltage

D1 / D2 = L @ I_diag= 0.5mA

D1 / D2 = L @ I_diag= 3mA

250

1.5

Diagnostic Leakage Current

D1 / D2 =H @ 0 < V_dg< V_s

V_S= 15.6 to 35V

µA

V_fdg5/6-3

Clamping Diodes at the

Diagnostic Outputs.

Voltage Drop to V^S

@ I_diag= 5mA; D1 / D2 = H

Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.

All test not dissipative.

3/12

TDE1897C - TDE1898C

SOURCE DRAIN NDMOS DIODE

Symbol

V_fsd2-3

I_fp2-3

Parameter

Forward On Voltage

Test Condition

@ I_fsd= 625mA

Min.

Typ.

Max.

1.5

Unit

Forward Peak Current

Reverse Recovery Time

Forward Recovery Time

t = 10ms; d = 20%

t_rr2-3

I_f= 625mA di/dt = 25A/µs

200

t_fr2-3

THERMAL CHARACTERISTICS (*)

Θ Lim

Junction Temp. Protect.

Thermal Hysteresis

135

150

°C

T_H

SWITCHING CHARACTERISTICS (V_S= 24V; R_L= 48Ω) (*)

t_on

t_off

t_d

Turn on Delay Time

Turn off Delay Time

100

µs

Input Switching to Diagnostic

Valid

100

Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.

(*) Not tested.

Figure 1

DIAGNOSTIC TRUTH TABLE

Diagnostic Conditions

Input

Output

Diag1

Diag2

Normal Operation

Open Load Condition (I_o< I_old

Short to V_S

)

Short Circuit to Ground (I_O= I_SC

)

(**)

TDE1897C

TDE1898C

<H (*)

Output DMOS Open

Overtemperature

Supply Undervoltage (V_S< V_sth1in the falling phase of the

supply voltage; V_S< V_sth2in the rising phase of the supply

voltage)

(*) According to the intervention of the current limiting block.

(**) Acold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897

uses Diag2 to signal such condition, TDE1898 does not.

4/12

TDE1897C - TDE1898C

APPLICATION INFORMATION

Figure 3: DemagnetizationCycle Waveforms

DEMAGNETIZATION OF INDUCTIVE LOADS

An internal zener diode, limiting the voltage

across the Power MOS to between 45 and 55V

(V_cl), provides safe and fast demagnetization of

inductiveloads without external clamping devices.

The maximum energy that can be absorbed from

an inductive load is specified as 200mJ (at

T_j= 85°C).

To define the maximumswitching frequencythree

points have to be considered:

1) The total power dissipation is the sum of the

On State Power and of the Demagnetization

Energy multiplied by the frequency.

2) The total energy W dissipated in the device

during a demagnetizationcycle (figg. 2, 3) is:

V_cl– V_s

R_L

V_cl– V_s

R_L

W = V_cl

I_o–

log 1 +

Where:

V_cl= clamp voltage;

L =inductive load;

R_L= resistive load;

Vs = supply voltage;

I_O= I_LOAD

3) In normal conditions the operating Junction

temperature should remain below 125°C.

Figure 4: Normalized R_DSONvs. Junction

Figure 2: InductiveLoad Equivalent Circuit

Temperature

D93IN018

1.8

RDSON (Tj)

α=

RDSON (Tj=25°C)

1.6

1.4

1.2

1.0

0.8

0.6

-25

100 125

Tj (°C)

5/12

TDE1897C - TDE1898C

the third element are constant, while the first

one increases with temperature because

R_DSONincreasesas well.

WORST CONDITION POWER DISSIPATION IN

THE ON-STATE

In IPS applications the maximum average power

dissipation occurs when the device stays for a

long time in the ON state. In such a situation the

internal temperature depends on delivered cur-

rent (and related power), thermal characteristics

of the packageand ambient temperature.

At ambient temperature close to upper limit

(+85°C) and in the worst operating conditions, it is

possible that the chip temperature could increase

so much to make the thermal shutdown proce-

dure untimely intervene.

3) The chip temperature must not exceed ΘLim

in order do not lose the control of the device.

The heat dissipation path is represented by

the thermal resistance of the system device-

board-ambient (R_th). In steady state condi-

tions, this parameter relates the power dissi-

pated P_onto the silicon temperature T_jand

the ambient temperature T_amb

Our aim is to find the maximum current the IPS

can withstand in the ON state without thermal

shutdown intervention, related to ambient tem-

perature. To this end, we should consider the fol-

lowing points:

1) The ON resistance R_DSONof the output

NDMOS (the real switch) of the device in-

creases with its temperature.

T _j± T _amb= P _onR _th

(2)

From this relationship, the maximum power

P_onwhich can be dissipated without exceed-

ing ΘLim at a given ambient temperature

T_ambis:

ΘLim ± T _amb

P _on

Experimentalresults show that silicon resistiv-

ity increases with temperature at a constant

rate, rising of 60% from 25°C to 125°C.

The relationship between R_DSONand tem-

perature is therefore:

Replacing the expression (1) in this equation

and solving for I_out, we can find the maximum

current versus ambient temperature relation-

ship:

± 25 )

_DSON= R _DSON0( 1 + k ) ^{( T}

where:

T_jis the silicon temperature in °C

ΘLim ± T _amb

± P _q± P _os

R _th

_DSON0is R_DSONat T_j=25°C

k is the constant rate (k = 4.711 10 ^±3)

(see fig. 4).

I _outx

√

DSONx

where R_DSONx is R_DSONat T_j=ΘLim. Of

course, I_outxvalues are top limited by the

maximum operative current I_outx(500mA

nominal).

From the expression (2) we can also find the

maximum ambient temperature T_ambat which

a given power P_oncan be dissipated:

2) In the ON state the power dissipated in the

device is due to three contributes:

a) power lost i₂n the switch:

_out= I _out

R _DSON(I_outis the output cur-

rent);

b) power due to quiescent current in the ON

state Iq, sunk by the device in addition to

I_out: P _q= I _qV _s(V_sis the supply voltage);

_amb= ΘLim ± P

R th =

= ΘLim ± ( I _out

R _DSONx+ P _q+ P _os) R

c) an external LED could be used to visualize

the switch state (OUTPUT STATUS pin).

Such a LED is driven by an internal current

source (delivering I_os) and therefore,if V_osis

the voltagedrop across the LED, the dissi-

pated power is: P _os= I _os( V _s± V _os).

In particular, this relation is useful to find the

maximum ambient temperature T_ambxat

which I_outxcan be delivered:

T _ambx= ΘLim ± ( I _outxR _DSONx

+ P _q+ P _os) R _th

(4)

Thus the total ON state power consumptionis

given by:

Referring to application circuit in fig. 5, let us con-

sider the worst case:

_on= P _out+ P _q+ P _os

(1)

- The supply voltage is at maximum value of in-

dustrial bus (30V instead of the 24V nominal

value). This means also that I_outxrises of 25%

In the right side of equation 1, the second and

6/12

TDE1897C - TDE1898C

(625mA instead of 500mA).

From equation 4, we can find:

- All electrical parameters of the device, con-

cerning the calculation, are at maximum val-

ues.

T_ambx= 66.7°C (Minidip);

73.5°C(SO20);

87.2°C(SIP9).

- Thermal shutdown threshold is at minimum

value.

Therefore, the IPS TDE1897/1898, although

guaranteed to operate up to 85°C ambient tem-

perature, if used in the worst conditions,can meet

some limitations.

- No heat sink nor air circulation (R_thequal to

R_thj-amb).

SIP9 package, which has the lowest R_thj-amb, can

work at maximum operative current over the en-

tire ambient temperature range in the worst condi-

tions too. For other packages, it is necessary to

consider some reductions.

With the aid of equation 3, we can draw a derat-

ing curve giving the maximum current allowable

versus ambient temperature. The diagrams, com-

puted using parameter values above given, are

depicted in figg. 6 to 8.

Therefore:

V_s= 30V, R_DSON0= 0.6Ω, I_q= 6mA, I_os= 4mA @

V_os= 2.5V, ΘLim = 135°C

R_thj-amb= 100°C/W (Minidip); 90°C/W (SO20);

70°C/W (SIP9)

It follows:

I_outx= 0.625mA, R_DSONx= 1.006Ω, P_q= 180mW,

If an increase of the operating area is needed,

heat dissipation must be improved (R_threduced)

e.g. by means of air cooling.

P_os= 110mW

Figure 5: Application Circuit.

DC BUS 24V +/-25%

+Vs

+IN

-IN

CONTROL

OUTPUT

LOGIC

µP POLLING

Ios

LOAD

GND

OUTPUT STATUS

D93IN014

7/12

TDE1897C - TDE1898C

Figure 6: Max. Output Current vs. Ambient

Temperature(Minidip Package,

R_{th j-amb}= 100°C/W)

Figure 7: Max. Output Current vs. Ambient

Temperature (SO20 Package,

R_{th j-amb}= 90°C/W)

D93IN016

D93IN015

(mA)

600

500

400

300

200

100

(mA)

600

500

400

300

200

100

100 (°C)

Figure 8: Max. Output Current vs. Ambient

Temperature(SIP9 Package,

R_{th j-amb}= 70°C/W)

D93IN017

(mA)

600

500

400

300

200

100

100 (°C)

8/12

TDE1897C - TDE1898C

MINIDIP PACKAGE MECHANICAL DATA

inch

DIM

Min.

Typ.

Max.

Min.

Typ.

Max.

3.32

0.131

0.51

1.15

0.020

0.045

0.014

0.008

1.65

0.55

0.065

0.022

0.012

0.430

0.384

0.356

0.204

0.304

10.92

9.75

7.95

0.313

2.54

7.62

0.100

0.300

6.6

0260

0.200

0.150

0.060

5.08

3.81

1.52

3.18

0.125

9/12

TDE1897C - TDE1898C

SIP9 PACKAGE MECHANICAL DATA

inch

TYP.

DIM.

MIN.

TYP.

MAX.

7.1

MIN.

MAX.

0.280

0.118

0.90

2.7

0.106

24.8

0.976

0.5

0.020

0.85

1.6

0.033

0.063

0.835

3.3

0.130

0.017

0.052

0.43

1.32

21.2

14.5

2.54

0.571

0.100

0.800

20.32

3.1

0.122

0.685

0.118

0.693

17.6

0.25

0.010

0,702

17.4

17.85

3.2

0.126

0.039

0.15

0.006

SIP9

10/12

TDE1897C - TDE1898C

SO20 PACKAGE MECHANICAL DATA

inch

DIM.

MIN.

TYP.

MAX.

2.65

0.2

MIN.

TYP.

MAX.

0.104

0.008

0.096

0.019

0.013

0.1

0.004

2.45

0.49

0.32

0.35

0.23

0.014

0.009

0.5

0.020

45° (typ.)

12.6

13.0

0.496

0.394

0.510

0.419

10.65

1.27

0.050

0.450

11.43

7.4

0.5

7.6

0.291

0.020

0.300

0.050

0.030

1.27

0.75

8° (max.)

11/12

TDE1897C - TDE1898C

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-

THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

written approval of SGS-THOMSON Microelectronics.

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12/12

TDE1897CFPT [STMICROELECTRONICS]

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