TDF1779 [STMICROELECTRONICS]

DUAL 2-A SOURCE DRIVER; 双程源极驱动器


型号：	TDF1779
厂家：	ST
描述：	DUAL 2-A SOURCE DRIVER 双程源极驱动器驱动器
文件：	总9页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TDF1779A

DUAL 2-A SOURCE DRIVER

OUTPUT CURRENT UP TO 2.5 A

WIDE RANGE OF SUPPLY VOLTAGE : + 8 V

TO + 26 V

CAN WITHSTAND OVERVOLTAGES OF AS

HIGH AS 60 V BETWEEN V_CCAND GROUND

OUTPUT VOLTAGE CAN SWING TO LOWER

THAN GROUND

MULTIWATT-11

”SENSE” AND ”ALARM” OUTPUTS ARE OPEN

COLLECTOR OUTPUTS

DESCRIPTION

The TDF1779A is a dual source driver delivering

hihgoutputcurrentsandthecapabilitytodrive highly

inductive loads (Electrovalves, contractors, re-

lays...).

This device is essentially blow-out proof, each out-

put isprotectedagainst short-circuits. If internal dis-

sipationbecomestoo high,drivers will shut downto

prevent excessive heating. An ”ALARM” output is

provided to indicatethe action of thethermalprotec-

tion. To reactivatethe poweroutputs,the resetinput

must be forced to low state.

ORDERING NUMBER : TDE 1779ASP

”SENSE” information of both power outputs are

ORed togetherand then processed internally.

A ”STROBE” input is also provided to offer the pos-

sibility of disabling the power outputs.

PIN CONNECTION

1 - Output 1

2 - V_CC

3 - Output 2

4 - N.C.

5 - Strobe

6 - Ground

7 - Input 2

8 - Sense output

9 - Alarm output

10 - Resetinput

11 - Input 1

Tab is connected to pin 6

1/9

April 1993

TDF1779A

BLOCK DIAGRAM

MAXIMUM RATINGS

Symbol

arameter

Value

Unit

V_CC

V_I, V_reset

V_strobe

I_O

Supply Voltage

Input Voltage (Pins 7, 10 and 11)

35 V (60 V/10 ms)

– 30 to + 50

Strobe Input Voltage

– 0.5 to V_CC

Output Current

Internally Limited

– 40 to + 85

P_tot

Power Dissipation

°C

T_oper

Operating Ambient temperature Range

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Uni

R_{th (j-c)}

R_{th (j-a)}

Junction-case Thermal Resistance

Max.

°C/W

Junction-ambient Thermal Resistance

2/9

TDF1779A

ELECTRICAL OPERATING CHARACTERISTICS

(V_CC= + 24V, –40^oC < T_j< + 85^oC, unless otherwise specified)

Symbol

V_CC

Parameter

Min.

Typ.

Max.

Unit

Power Supply Voltage

I_CC

Power Supply Current (pin 6), I_O1=I_O2= 2A

Logic Input Voltage (pin 7,10,11)

V_IL

V_IH

0.8

V_I

I_IH

I_IL

Logic Input Threshold (pin 5)

0.8

µA

High Level Input Current (pins 7,10,11) V_I= + 2V

Low Level Input Current (pins 7,10,11) V_I= + 0.8V

Off State Output Voltage (pins 8,9) |(8) = |(9) = 2 mA

– 5

+ 5

0.4

1.8

V_CC– V₀₁Output Saturation Voltage (V(7) high, V(11) High, I_O= 2A)

V_CC– V₀₂

1.5

I_OL

Low Level Output Current pins 1,3)

V(7) Low, V(11) Low, V_O= 0V

400

1000

µA

V_CC– V₀₁Switch-off Output Voltage (inductive load) Note 1

V_CC– V₀₂

I_O1, I_O2

Available Ouptut Current (pins 1,3), V(7) high, V(11p) high,

V_CC– V_O= 26V, T_j= 25°C

I_{O Alarme}

I_{O Sense}

I_{IH Sense}

Available ”Alarme” Output Current, V(9) = + 4V

Available ”Sense Ouptut Current, V(8) = + 4V

Output Sensing high Level Input Current (pins 1,3) V_I= +2V

Note 1 : An external discharge circuit is required for inductive loads

3/9

TDF1779A

AVAILABLE OUTPUT CURRENT

OUTPUT SATURATION VOLTAGE

AVAILABLE ALARM OR SENSE OUTPUT

CURRENTS

POWER SUPPLY CURRENT

4/9

TDF1779A

5/9

TDF1779A

TYPICAL APPLICATION WITH TDF1779A TWO LOADS 12 V - 2 A

Load : R_C= 6 Ω

The external Zener diode must dissipate the power stored in the inductance L_C.

R₁min = V_CC/4 mA, R₂min = V_CC/4 mA, Rmax = V_CC/1 mA.

MAIN FEATURES

This application is protected against for short circuit and overload.

The load disconnection is detectedwhen inputs E₁and E₂are low and the sense output is high.

When thermal protection is actived the pin 9 is low. Inputs are TTL compatible.

Sense output, Alarm output are open collector.

6/9

TDF1779A

TDF1779A HIGHT CURRENT APPLICATION WITH LOAD 12 V - 4 A

Load : R_C= 3 Ω

The external Zener diode must dissipate the power stored in the inductance Lc.

R₁min = V_CC/4 mA, R₂min = V_CC/4 mA, Rmax = V_CC/2 mA.

MAIN FEATURES

This application has the same features as the dual 2 A - 12 V application.

7/9

TDF1779A

MULTIWATT11 PACKAGE MECHANICAL DATA

DIM.

inch

TYP.

MIN.

TYP.

MAX.

MIN.

MAX.

0.197

0.104

0.063

2.65

1.6

0.039

0.49

0.88

1.45

16.75

19.6

0.55

0.95

0.019

0.035

0.057

0.659

0.772

0.022

0.037

0.077

0.679

1.7

1.95

0.067

0.669

17.25

20.2

22.5

18.1

17.75

10.9

2.9

0.795

0.886

0.713

0.699

0.429

0.114

0.191

0.214

0.102

0.152

21.9

21.7

17.4

17.25

10.3

2.65

4.25

4.73

1.9

22.2

22.1

0.862

0.854

0.685

0.679

0.406

0.104

0.167

0.186

0.075

0.144

0.874

0.87

17.5

10.7

0.689

0.421

4.55

5.08

4.85

5.43

2.6

0.179

0.200

Dia1

1.9

2.6

3.65

3.85

8/9

TDF1779A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for

the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its

use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica-

tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre-

viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of SGS-THOMSON Microelectronics.

MULTIWATT11 is a Registered Trademark of the SGS-THOMSON Microelectronics

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore -

Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.

9/9

TDF1779 [STMICROELECTRONICS]

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