THA15 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS; 射频与微波晶体管短波单边带应用
| 型号： | THA15 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| 文件： | 总7页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1726 (THA15)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.
.
.
.
.
.
.
OPTIMIZED FOR SSB
30 MHz
50 VOLTS
IMD −30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT 150 W PEP MIN. WITH 14 dB GAIN
=
.500 4LFL (M174)
epoxy sealed
ORDER CODE
SD1726
BRANDING
THA15
PIN CONNECTION
DESCRIPTION
The SD1726 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communica-
tions. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe oper-
ating conditions.
1. Collector
2. Emitter
3. Base
4. Emitter
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
110
55
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
V
4.0
V
10
A
PDISS
TJ
Power Dissipation
233
+200
W
°
°
Junction Temperature
Storage Temperature
C
C
TSTG
65 to +150
0.75
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
°C/W
1/7
November 1992
SD1726 (THA15)
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVCES
BVCEO
BVEBO
ICEO
IC = 100mA
IC = 100mA
IC = 100mA
IE = 10mA
VCE = 30V
VCE = 60V
VCE = 6V
IE = 0mA
VBE = 0V
IB = 0mA
IC = 0mA
IE = 0mA
IE = 0mA
IC = 1.4A
110
110
55
—
—
—
—
—
—
—
V
V
—
—
V
4.0
—
—
V
5
mA
mA
—
ICES
—
5
hFE
18
43.5
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
150
14
Typ. Max.
POUT
GP*
f = 30 MHz
VCE = 50 V
VCE = 50 V
VCE = 50 V
VCE = 50 V
VCB = 50 V
ICQ = 100mA
ICQ = 100mA
ICQ = 100mA
ICQ = 100mA
—
—
—
—
—
—
—
W
dB
dBc
%
POUT = 150 WPEP
POUT = 150 WPEP
POUT = 150 WPEP
f = 1 MHz
IMD*
—
−30
—
η
c*
37
COB
—
220
pF
Note:
The SD1726 is also usable in Class A at 40 V. Typical performance is:
30 W PEP, G 14 dB, IMD 40dBc
P
=
=
P
= −
OUT
* f = 30.00 MHz; f = 30.001 MHz
1
2
2/7
SD1726 (THA15)
TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
OUTPUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT PEP
3/7
SD1726 (THA15)
TYPICAL PERFORMANCE (cont’d)
POWER GAIN vs FREQUENCY
POWER GAIN vs POWER OUTPUT PEP
SAFE OPERATING AREA
4/7
SD1726 (THA15)
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
BIAS CRCUIT
5/7
SD1726 (THA15)
TEST CIRCUIT - CLASS AB - 30 MHz
L1
L2
L3
L4
L5
:
:
:
:
:
5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm
Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick
1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm
6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm
4 Turns Diameter 12mm, 2mm Wire, Length 25mm
C1
C2
C3
C4
C5, C6
C7
C8, C12
C9, C11
C15
C10
C13
C14
:
:
:
:
:
:
:
Arco 427
Arco 4611
Arco 4615
220pF
Arco 4215
Arco 426
100nF 63V
L6, L7
L8
:
:
Choke
R
0.6
Ω
:
:
:
:
1nF
470 F 40V
µ
220µF 63V
10nF
MOUNTING CIRCUIT - CLASS AB - 30MHz
6/7
SD1726 (THA15)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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7/7
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