TIP105 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; 互补硅功率达林顿晶体管
| 型号： | TIP105 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP102
TIP105 TIP107
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
■
■
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■
LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
3
2
1
DESCRIPTION
The TIP102 is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in TO-220 plastic
package. It is intented for use in power linear and
switching applications.
TO-220
The complementary PNP type is TIP107.
Also TIP105 is a PNP type.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
TIP102
TIP107
100
TIP105
60
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
V
A
A
A
60
100
5
8
ICM
Collector Peak Current
15
1
IB
Base Current
o
Ptot
80
2
W
W
oC
oC
Total Dissipation at Tcase 25 C
≤
o
Tamb ≤ 25 C
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
* For PNP types voltageand current values are negative.
1/4
October 1999
TIP102 / TIP105 / TIP107
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
oC/W
oC/W
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
for TIP105
for TIP102/TIP107
VCE = 30 V
VCE = 50 V
50
50
µA
A
µ
ICBO
IEBO
Collector Cut-off
Current (IE = 0)
for TIP105
for TIP102/TIP107
VCB = 60 V
VCB = 100 V
50
50
µA
A
µ
Emitter Cut-off Current VEB = 5 V
(IC = 0)
8
mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
TIP105
for TIP102/TIP107
for
60
100
V
V
VCE(sat)
*
Collector-Emitter
Saturation Voltage
IC = 3 A
IC = 8 A
IB = 6 mA
IB = 80 mA
2
2.5
V
V
VBE
hFE
*
*
Base-Emitter Voltage
DC Current Gain
IC = 8 A
VCE = 4 V
2.8
V
V
IC = 3 A
IC = 8 A
VCE = 4 V
VCE = 4 V
1000
200
20000
VF*
Forward Voltage of
Commutation Diode
(IB = 0)
IF = - IC = 10 A
2.8
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
2/4
TIP102 / TIP105 / TIP107
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
3/4
TIP102 / TIP105 / TIP107
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
.
4/4
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