TIP110 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; 互补硅功率达林顿晶体管
| 型号： | TIP110 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP110/112
TIP115/117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
■
■
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
■
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
3
2
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
TO-220
DESCRIPTION
The TIP110
and
TIP112 are
silicon
Epitaxial-Base NPN transistors in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package. They are intented for
use in medium power linear and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
The complementary PNP types are TIP115 and
TIP117.
R1 Typ.= 7K Ω
R2 Typ.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
TIP110
TIP115
60
TIP112
TIP117
100
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
60
100
5
2
V
A
ICM
Collector Peak Current
Base Current
4
A
IB
50
mA
o
Ptot
50
2
W
W
oC
oC
Total Dissipation at Tcase ≤ 25 C
o
Tamb ≤ 25 C
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
* For PNP types voltage and current values are negative
1/6
June 1999
TIP110/TIP112/TIP115/TIP117
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.5
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = Half Rated VCEO
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
2
mA
ICBO
IEBO
Collector Cut-off
Current (IE = 0)
VCB = Rated VCBO
1
2
mA
mA
Emitter Cut-off Current VEB = 5 V
(IC = 0)
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
for TIP110/115
for TIP112/117
60
100
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 8 mA
2.5
2.8
V
VBE
hFE
Base-Emitter Voltage
DC Current Gain
IC = 2 A
VCE = 4 V
V
IC = 1 A
IC = 2 A
VCE = 4 V
VCE = 4 V
1000
500
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Areas
Derating Curve
2/6
TIP110/TIP112/TIP115/TIP117
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter SaturationVoltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-EmitterSaturation Voltage (PNP type)
3/6
TIP110/TIP112/TIP115/TIP117
Base-Emitter On Voltage (NPN type)
Base-EmitterOn Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
4/6
TIP110/TIP112/TIP115/TIP117
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
5/6
TIP110/TIP112/TIP115/TIP117
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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6/6
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