TLC116A [STMICROELECTRONICS]
SENSITIVE GATE TRIACS; 敏感的双向可控硅门
| 型号： | TLC116A |
| 厂家： | 
ST |
| 描述： | SENSITIVE GATE TRIACS |
| 文件： | 总5页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLC116 ---> TLC386
T/D/S/A
SENSITIVE GATE TRIACS
FEATURES
VERY LOW I = 5mA max
.
GT
LOW I = 15mA max
.
H
DESCRIPTION
The TLC116 ---> TLC386 T/D/S/A triac family
uses a high performance glass passivated PNPN
technology.
A1
A2
G
These parts are suitable for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
TL
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
3
Unit
I
RMS on-state current
(360 conduction angle)
Tl = 40°C
Ta = 25°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
A
T(RMS)
°
1.3 (1)
31.5
30
I
Non repetitive surge peak on-state current
( Tj initial = 25 C )
A
TSM
°
2
2
2
I t
I t value
4.5
A s
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
10
A/µs
Gate supply : I = 50mA di /dt = 0.1A/ s
µ
G
G
Non
50
Repetitive
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110
°C
C
°
Tl
Maximum lead temperature for soldering during 4 s at 4.5 mm
from case
230
C
°
Symbol
Parameter
TLC
226 T/D/S/A 336 T/D/S/A
400 600
Unit
116 T/D/S/A
386 T/D/S/A
700
V
V
Repetitive peak off-state
200
V
DRM
RRM
voltage
Tj = 110°C
(1) With Cu surface 1cm2.
1/5
February 1999 Ed: 1A
TLC116 T/D/S/A ---> TLC386 T/D/S/A
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
°C/W
2
Rth (j-a)
Junction to ambient on printed circuit with Cu surface 1cm
Rth (j-l) DC Junction leads for DC
20
Rth (j-l) AC Junction leads for 360° conduction angle ( F= 50 Hz)
15
GATE CHARACTERISTICS (maximum values)
P
= 0.1W
P
GM
= 2W (tp = 20 µs)
I
= 1A (tp = 20 µs)
V = 16V (tp = 20 µs).
GM
G (AV)
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
5
5
D
5
S
A
I
V =12V (DC) R =33Ω
Tj=25°C
I-II-III
IV
MAX
MAX
MAX
MIN
10
10
10
25
mA
GT
D
L
10
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=110°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
1.5
0.2
2
V
V
GT
D
L
V
V =V
R =3.3kΩ
L
GD
D
DRM
DRM
tgt
V =V
I
G
= 40mA
TYP
µs
D
dI /dt = 0.5A/µs
G
I
IG= 1.2 I
Tj=25°C
I-III-IV
II
MAX
15
15
15
15
15
15
25
25
25
25
25
25
mA
L
GT
I
*
I = 100mA gate open
Tj=25 C
MAX
MAX
MAX
MAX
TYP
mA
V
°
H
T
V
I
*
I
= 4A tp= 380µs
TM
Tj=25°C
1.85
0.01
0.75
TM
V
V
Rated
Rated
Tj=25 C
mA
°
DRM
RRM
DRM
RRM
I
Tj=110°C
dV/dt *
Linear
slope
up
to
Tj=110 C
10
1
10
1
20
5
20
5
V/ s
µ
°
V =67%V
D
DRM
gate open
(dV/dt)c *
(dI/dt)c = 1.3A/ms
Tj=110°C
TYP
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
TLC116 T/D/S/A ---> TLC386 T/D/S/A
ORDERING INFORMATION
Package
I
V
/ V
DRM RRM
Sensitivity Specification
T(RMS)
A
V
T
X
X
X
X
D
X
X
X
X
S
X
X
X
X
A
X
X
X
X
TLC ..6
3
200
400
600
700
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2
:
Correlation between maximum RMS power
amb
dissipation and maximum allowable temperatures (T
and T ).
lead
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Thermal transient impedance junction to case
and junction to ambient versus pulse duration.
3/5
TLC116 T/D/S/A ---> TLC386 T/D/S/A
Fig.5 : Relative variation of gate trigger current and
Fig.6 : Non Repetitive surge peak on-state current
holding current versus junction temperature.
versus number of cycles.
Fig.7 : Non repetitive surge peak on-state current for a
Fig.8 : On-state characteristics (maximum values).
sinusoidal pulse with width
corresponding value of I t.
:
t
10ms, and
≤
2
4/5
TLC116 T/D/S/A ---> TLC386 T/D/S/A
PACKAGE MECHANICAL DATA
TL Plastic
REF.
DIMENSIONS
Millimeters Inches
D
A
Min.
Max.
10.05
8.05
Min.
Max.
0.396
0.317
E
A
B
C
D
E
F
G
H
I
9.55
7.55
12.70
4.25
1.25
6.75
0.375
0.297
0.500
0.167
0.049
0.266
F
B
C
4.75
1.75
7.25
4.50
3.04
0.85
0.187
0.069
0.285
0.177
0.120
0.033
G
I
2.04
0.75
0.80
0.029
H
H
Marking : type number
Weight : 0.75 g
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5/5
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