TN1610H-6I [STMICROELECTRONICS]
Silicon Controlled Rectifier;
| 型号： | TN1610H-6I |
| 厂家： | 
ST |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总10页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN1610H-6I
Datasheet
16 A 600 V high temperature SCR thyristors in insulated TO-220
Features
A
K
•
•
•
•
•
High junction temperature: Tj = 150 °C
High noise immunity dV/dt = 1000 V/µs up to 150 °C
Peak off-state voltage VDRM/VRRM = 600 V
High turn-on current rise dI/dt = 100 A/µs
Insulated package TO-220AB:
G
–
–
Insulated voltage: 2500 VRMS
Complies with UL 1557 (File ref : E81734)
K
•
•
ECOPACK2 compliant
A
G
Halogen-free molding, lead-free plating
TO-220AB insulated
Applications
•
•
•
•
General purpose AC line load switching
Motor control circuits and starters
Inrush current limiting circuits
Heating resistor control, solid state relays
Description
Thanks to its operating junction temperature up to 150°C, the TN1610H-6I offers high
thermal performance operation up to 16 A rms.
Product status
Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current
(IGT = 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust
and compact control circuit for voltage regulator in motorbikes and industrial drives,
overvoltage crowbar protection, motor control circuits in power tools and kitchen
appliances and inrush current limiting circuits.
TN1610H-6I
Product summary
Order code
TN1610H-6I
TO-220AB Ins.
16 A
Package
I
T(RMS)
V
/V
600 V
DRM RRM
T max.
j
150 °C
DS13199 - Rev 1 - December 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
TN1610H-6I
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
Value
16
Unit
I
T = 116 °C
c
RMS on-state current (180 ° conduction angle)
A
T(RMS)
T = 116 °C
c
10
I
T = 126 °C
Average on-state current (180 ° conduction angle)
8
A
A
T(AV)
c
T = 134 °C
c
6
t = 8.3 ms
p
153
140
98
I
Non repetitive surge peak on-state current (T initial = 25 °C)
TSM
j
t = 10 ms
p
2
2
2
t = 10 ms
p
I t value for fusing, (T initial = 25 °C)
I t
A s
j
I
= 2 x I , tr ≤ 100 ns
GT
G
dl/dt
f = 60 Hz
100
600
A/µs
Critical rate of rise of on-state current
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
V
/V
V
V
DRM RRM
V
/V
t = 10 ms
p
V
/V
+ 100 V
DSM RSM
DRM RRM
I
t = 20 µs
p
T = 150 °C
j
4
1
5
A
GM
P
T = 150 °C
j
Average gate power dissipation
Maximum peak reverse voltage
Storage junction temperature range
W
V
G(AV)
V
RGM
T
-40 to +150
°C
°C
°C
V
stg
T
j
Maximum operating junction temperature
Maximum lead temperature soldering during 10 s
Insulation rms voltage, 1 minute
-40 to +150
260
T
l
V
2500
iso
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Test conditions
Symbol
Value Unit
Typ.
4.5
mA
10
I
GT
V
V
= 12 V, R = 33 Ω
Max.
Max.
Min.
D
L
V
1.3
0.2
30
V
V
GT
V
= V
, R = 3.3 kΩ
T = 150 °C
j
GD
D
DRM
L
I
I = 500 mA, gate open
T
Max.
Max.
mA
mA
H
I
I = 1.2 x I
G GT
60
L
V
D
= 402 V, gate open
T = 150 °C
j
dV/dt
Min. 1000 V/µs
t
I = 32 A, V = 402 V, I = 20 mA, (dI /dt) max = 0.2 A/µs
T D G G
Typ.
Typ.
1.9
70
µs
µs
gt
t
I = 16 A, V = 402 V, (dI /dt) max = 30 A/µs, V = 25 V, dV /dt = 40 V/µs
T = 150 °C
j
q
T
D
G
R
D
DS13199 - Rev 1
page 2/10
TN1610H-6I
Characteristics
Table 3. Static characteristics
Test conditions
Symbol
Value
Unit
V
I = 32 A, t = 380 µs
T = 25 °C
Max.
Max.
Max.
1.60
0.82
25
TM
T
p
j
V
V
T = 150 °C
j
Threshold voltage
Dynamic resistance
TO
R
T = 150 °C
j
mΩ
µA
D
T = 25 °C
5
j
I
, I
V
= V
; V = V
DRM R RRM
Max.
DRM RRM
D
T = 150 °C
j
1.5
mA
Table 4. Thermal parameters
Parameter
Symbol
Value
2.3
Unit
R
th(j-c)
Junction to case (DC)
Max.
Typ.
°C/W
R
th(j-a)
Junction to ambient (DC)
60
DS13199 - Rev 1
page 3/10
TN1610H-6I
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum power dissipation versus average on-
state current
Figure 2. Average and DC on-state current versus case
temperature
P(W)
16
I
(A)
T(AV)
α = 180 °
18
16
14
12
10
8
α = 120 °
DC
14
12
10
8
D.C
α = 90 °
α = 60 °
α = 180°
α = 120°
α = 90°
α = 30 °
α = 60°
α = 30°
6
6
4
4
360 °
2
2
T (°C)
c
I
(A)
α
T(AV)
14
0
0
0
2
4
6
8
10
12
16
0
25
50
75
100
125
150
Figure 3. Average and D.C. on state current versus
ambient temperature
Figure 4. Relative variation of thermal impedance junction
to case and junction to ambient versus pulse duration
K = [Z / R
]
I
(A)
T(AV)
th th
1.0E+00
1.0E-01
1.0E-02
3
2.5
DC
Z
th(j-c)
2
Z
α = 180 °
th(j-a)
1.5
1
0.5
t (s)
P
T (°C)
a
0
0
25
50
75
100
125
150
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 5. Relative variation of gate triggering current and
gate voltage versus junction temperature (typical values)
Figure 6. Relative variation of holding and latching
current versus junction temperature (typical values)
I
, V [ T ] / I , V [ T = 25 °C]
GT GT
GT GT
I , I [ T ] / I , I [ T = 25 °C]
H
L
H L
j
j
j
j
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.4
2.0
1.6
1.2
0.8
0.4
0.0
I
I
H
GT
I
L
V
GT
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
DS13199 - Rev 1
page 4/10
TN1610H-6I
Characteristics (curves)
Figure 7. Relative variation of static dV/dt immunity
versus junction temperature
Figure 8. Surge peak on-state current versus number of
cycles
ITSM(A)
150
dV/dt [T ] / dV/dt [T = 150 °C]
j
j
6
5
4
3
2
1
0
Non repetitive T = 25 °C
j
tp=10ms
Above test equipment capability
One cycle
100
Repetitive T = 116 °C
c
50
VD = VR = 402 V
T (°C)
Number of cycles
100
j
0
25
50
75
100
125
150
1
10
1000
Figure 9. Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
Figure 10. On-state characteristics (maximum values)
I
(A)
TM
I
(A)
1000
100
10
TSM
10000
1000
100
T initial = 25 °C
j
T max:
= 0.84 V
t0
Rd = 14 mΩ
I
j
TSM
V
dl/dt limitation: 100 A/µs
T = 150 °C
j
T = 25 °C
j
V
(V)
TM
4.0
t (ms)
p
1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5
0.01
0.1
1
10
Figure 11. Relative variation of leakage current versus junction
I
, I
DRM RRM
[ T ; V
j
, V
DRM RRM
] / I
, I
[ 150 °C; 600 V ]
DRM RRM
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
V
=
V
=
RRM
600 V
DRM
T (°C)
j
25
50
75
100
125
150
DS13199 - Rev 1
page 5/10
TN1610H-6I
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
TO-220AB insulated package information
•
•
•
•
Molding compound resin is halogen-free and meets flammability standard UL94 level 0
Lead-free package leads finishing
ECOPACK2 compliant
Recommended torque: 0.4 to 0.6 N.m
Figure 12. TO-220AB insulated package outline
C
B
I
b2
Resin gate 0.5 mm
max. protusion(1)
L
F
A
I4
l3
l2
c2
a1
a2
M
c1
Resin gate 0.5 mm
max. protusion(1)
b1
e
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
DS13199 - Rev 1
page 6/10
TN1610H-6I
TO-220AB insulated package information
Table 5. TO-220AB insulated package mechanical data
Dimensions
Inches(1)
Typ.
Ref.
Millimeters
Typ.
Min.
Max.
Min.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch dimensions are for reference only.
DS13199 - Rev 1
page 7/10
TN1610H-6I
Ordering information
3
Ordering information
Figure 13. Ordering information scheme
TN 16 10
H - 6
I
Series
TN = SCR
RMS current
16 = 16 A
Gate triggering current
10 = 10 mA
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
I = TO-220AB insulated
Delivery mode
Blank = tube
Table 6. Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN1610H-6I
TN1610H6
TO-220AB Ins.
2.3 g
50
Tube
DS13199 - Rev 1
page 8/10
TN1610H-6I
Revision history
Table 7. Document revision history
Date
Revision
Changes
Initial release.
16-Dec-2019
1
DS13199 - Rev 1
page 9/10
TN1610H-6I
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS13199 - Rev 1
page 10/10
相关型号：
©2020 ICPDF网 联系我们和版权申明