TN22-T [STMICROELECTRONICS]
STARTLIGHT; STARTLIGHT
| 型号： | TN22-T |
| 厂家： | 
ST |
| 描述： | STARTLIGHT |
| 文件： | 总9页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN22
®
STARTLIGHT
FEATURES AND BENEFITS
1
2, TAB
■
■
High clamping voltage structure (1200 -1500V)
Low gate triggering current for direct drive from
line (< 1.5mA)
3
TAB
TAB
■
High holding current (> 175mA), ensuring high
striking energy.
1
1
2
2
3
DESCRIPTION
3
The TN22 has been specifically developed for use
in electronic starter circuits. Use in conjunction
with a sensitive SCR and a resistor, it provides
high energy striking characteristics with low trig-
gering power. Thanks to its electronic concept, this
TN22 based starter offers high reliability levels and
extended life time of the fluorescent tubelamps.
DPAK
(TN22-B)
IPAK
(TN22-H)
TAB
1
2
3
TO-22AB
(TN22-T)
Table 1: Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak off-state voltage
Tj = 110°C
Tc = 95°C
400
V
RMS on-state current
Full sine ware (180° conduction angle)
IT(RMS)
IT(AV)
2
A
A
Mean on-state current
Full sinewave (180° conduction angle)
Tc = 95°C
1.8
tp = 8.3ms
tp = 10ms
tp = 10ms
22
20
2
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t Value for fusing
A
TSM
I
2
A2s
A/µs
I t
Critical rate of rise of on-state current
IG =5mA dIG /dt = 70 mA/µs.
dl/dt
50
Tstg
Tj
-40 to +150
-40 to +110
Storage and operating junction temperature range
°C
°C
Maximum lead temperature for soldering during 10s at
4.5mm from case
TI
260
September 2005
REV. 2
1/9
TN22
Table 2: Thermal resistance
Symbol
Parameter
Value
100
60
Unit
°C/W
°C/W
DPAK / IPAK
TO-220AB
Rth(j-a)
Rth(j-c)
Junction to AMBIENT
Junction to case
3
GATE CHARACTERISTICS (maximum values)
G (AV) = 300 mW PGM = 2W(tp = 20 µs) IFGM=1 A (tp = 20 µs) VRGM = 6V
P
Table 3: Static electrical characteristics (per diode)
Symbol
Test conditions
VD=12V (DC) RL= 33Ω
VD=12V (DC) RL= 33Ω
Type
Value
Unit
IGT
Tj = 25°C
Tj = 25°C
MAX
1.5
mA
VGT
MAX
3
V
R
GK = 1 KΩ
IH
VGK = 0V
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
MIN
MAX
MAX
175
3.1
0.1
mA
V
VTM
IDRM
ITM = 2A tp = 380µs
VDRM Rated
mA
Linear slope up to
VD=67%VDRM VGK = 0V
dV/dt
MIN
500
V/µs
Value
Symbol
Test conditions
Type
Unit
TN22-1500
1200
MIN
V
V
VBR
ID = 5mA VGK = 0V Tj = 25°C
MAX
1500
2/9
®
TN22
This thyristor has been designed for use as a fluo-
rescent tube starter switch.
■ A pre-heating period during which a heating cur-
rent is applied to the cathode heaters.
■ One or several high voltage striking pulses
across the lamp.
An electronic starter circuit provides :
Figure 1: Basic application diagram
INDUCTANCE
BALLAST
STARTER CIRCUIT
AC
VOLTAGE
FLUORESCENT
TUBE
R
CONTROLLER
TN22
(TIMER)
S
1/ Pre-heating
pulse. This overvoltage is clamped by the thyristor
avalanche characteristic (VBR).
If the lamp is not struck after the first pulse, the
system starts a new ignition sequence again.
At rest the switch S is opened and when the mains
voltage is applied across the circuit a full wave rec-
tified current flows through the resistor R and the
TN22 gate : at every half-cycle when this current
reaches the gate triggering current (IGT) the thyris
tor turns on.
3/ Steady state
When the lamp is on the running voltage is about
150V and the starter switch is in the off-state.
When the device is turned on the heating current,
limited by the ballast choke, flows through the tube
heaters.
IMPLEMENTATION
The resistor R must be chosen to ensure a proper
triggering in the worst case (minimum operating
temperature) according to the specified gate trig-
gering current and the peak line voltage.
Switch S : This function can be realized with a gate
sensitive SCR type : P0130AA 1EA3
This component is a low voltage device (< 50V)
and the maximum current sunk through this switch
can reach the level of the thyristor holding current.
The pre-heating period can be determined by the
time constant of a capacitor-resistor circuit
charged by the voltage drop of diodes used in se-
ries in the thyristor cathode.
The pre-heating time is typically 2 or 3 seconds.
2/ Pulsing
At the end of the pre-heating phase the switch S is
turned on. At this moment :
If the current through the devices is higher than the
holding current (IH) the thyristor remains on until
the current falls below IH. Then the thyristor turns
off.
If the current is equal or lower than the holding cur-
rent the thyristor turns off instantaneously.
When the thyristor turns off the current flowing
through the ballast choke generates a high voltage
3/9
®
TN22
Figure 2: Maximum average power dissipation
versus average on-state current (rectified full
sinewave)
Figure 3: Correlation between maximum aver-
age power dissipation and maximum allowable
temperature (Tamb and Tcase) for different ther-
mal resistances heatsink + contact
P
(W)
P
(W)
T(av)
T(av)
6
5
6
5
Rth=8 oC/W
Rth=4 o C/W
Rth=0o C/W
= 180o
= 120o
= 90o
= 60o
= 30 o
Rth=12 oC/W
4
3
2
1
4
3
2
1
0
= 180o
I
(A)
T(av)
Tcase ( oC)
10 20 30 40 50 60 70 80 90 100 110
0
0
0
0.2 0.4 0.6 0.8
1.2 1.4 1.6 1.8 2
1
Figure 4: Averrage on-state current versus
case temperature (rectified full sine wave)
Figure 5: Thermaltransientimpedancejunctionto
ambient versus pulse duration
I
(A)
Zth(j-a)(oC/W)
1.0E+02
T(av)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= 180o
1.0E+01
1.0E+00
Tcase ( oC)
tp(S)
1.0E-01
70
0.0
10 20 30 40 50 60
80 90 100 110
1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6: Relative variation of gate trigger cur-
rent and holding current versus junction tem-
perature
Figure 7: Non repetitive surge peak on-state
current versus number of cycles
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
20
18
16
14
12
10
8
Tj initial = 25oC
F = 50Hz
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Igt
Ih
6
4
2
Number of cycles
10
Tj(oC)
20
0
1
100
1000
-40 -20
0
40
60
80 100 120 140
4/9
®
TN22
Figure 8: Non repetitive surge peak on-state
current for a sinusoidal pulse with width : tp =
10ms, and corresponding value fo I2t
Figure 9: On-state characteristics (maximum
values)
2
2
I
(A). I t (A s)
V
TM
(V)
TSM
100
10
1
8
7
6
5
4
3
2
1
0
Tj initial = 25oC
o
Tj=110
C
Vto =2.50V
Rt =0.235
I
TSM
Tj=110 oC
Tj=25oC
2
I
t
I
(A)
TM
tp(ms)
0.1
20
1
10
1
10
Figure 10: Relative variation of holding current
versus gate-cathode resistance (typical val-
ues)
Figure 11: Maximum allowable RMS current
versus time conduction and initial case tempera-
ture. Note: Calculation made fot Tj max = 135°C
(the failure mode will be short circuit)
I
H
(mA)
I
(A)
T(rms)
Tc initial = 25oC
500
100
11
10
9
Tj=25oC
8
7
Tc initial = 45oC
6
5
Tc initial = 65oC
10
4
3
2
tp(s)
Rgk(
100
)
1
1
0.1
1
10
100
1
10
1000
Figure 12: Ordering information scheme
TN 2 2 - 1500 B (-TR)
STARTLIGHT
DEVICE
PACKAGE:
B: DPAK
H: IPAK
I
T(RMS) MAX
2: 2 A
VBR max:
PACKING MODE:
Blank:Tube
-TR: DPAK Tape & Reel
T:TO-220AB
1500: 1500V
IGT MAX
2: 1.5 mA
5/9
®
TN22
Figure 13: DPAK Package mechanical data
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
Max.
2.4
Max.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
A
A1
A2
B
2.2
0.9
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
V2
0.80 Typ.
0.031 Typ.
0.6
0°
1.0
8°
0.023
0°
0.039
8°
Figure 14: Footprint dimensions (in millimeters)
6.7
6.7
3
3
1.6
1.6
2.3 2.3
6/9
®
TN22
Figure 15: TO-220 Package mechanical data
DIMENSIONS
Millimeters Inches
Min. Min. Max.
REF.
Max.
4.60
1.32
2.72
0.70
0.88
1.71
1.70
5.15
2.70
10.40
A
H2
A
C
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
Dia
C
L5
L9
D
L7
E
L6
L4
F
L2
F2
F1
F1
F2
G
D
F
G1
H2
L2
L4
L5
L6
L7
L9
M
M
G1
E
16.4 Typ.
0.645 Typ.
G
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
2.6 Typ.
0.102 Typ.
Diam
3.75
3.85
0.147
0.151
7/9
®
TN22
Figure 16: IPAK Package mechanical data
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
A1
A3
B
2.20
0.90
0.70
0.64
5.20
2.40 0.086
1.10 0.035
1.30 0.027
0.90 0.025
5.40 0.204
0.95
0.094
0.043
0.051
0.035
0.212
0.037
A
E
C2
B2
L2
B2
B3
B5
C
D
0.30
0.035
0.45
0.48
6
0.60 0.017
0.60 0.019
6.20 0.236
6.60 0.252
0.023
0.023
0.244
0.260
H
B3
L1
C2
D
L
A1
B
V1
E
6.40
e
2.28
0.090
0.634
B5
C
e
G
4.40
4.60 0.173
0.181
A3
G
H
16.10
L
9
9.40 0.354
1.20 0.031
1
0.370
0.047
L1
L2
V1
0.8
0.80
10°
0.031 0.039
10°
Table 4: Ordering information
Type
TN22-1500B
TN22-1500B-TR
TN22-1500H
TN22-1500T
Marking
Package
DPAK
Weight
0.3 g
0.3 g
0.4 g
2.0 g
Base Qty
Delivery mode
Tube
TN22-1500
TN22-1500
TN22-1500
TN22-1500
75
2500
75
DPAK
Tape & Reel
Tube
IPAK
TO-220AB
50
Tube
Table 5: Revision History
Date
Revision
Description of Changes
Oct-2000
1
2
First issue.
TO-220AB package added.
17-Sep-2005
8/9
®
TN22
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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9/9
®
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