首页 |元器件品牌

TN4035-600G-TR [STMICROELECTRONICS]

40A SCRs; 可控硅40A
TN4035-600G-TR
型号： TN4035-600G-TR
厂家： ST    ST
描述：

40A SCRs
可控硅40A

可控硅
文件： 总5页 (文件大小：74K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
TN4035-600G  
®
40A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
40  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600  
35  
V
DRM RRM  
I
mA  
GT  
A
K
A
G
DESCRIPTION  
The TN4035-600G is designed for applications  
where in-rush current conditions are critical, such  
as overvoltage crowbar protection circuits in  
power supplies.  
2
D PAK  
Using clip assembly technology, provides higher  
fusing threshold than wires.  
Mounting precautions detailled in application note  
AN533 on www.st.com.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
40  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 95°C  
Tc = 95°C  
A
A
IT  
Average on-state current (180° conduction angle)  
(AV)  
TSM  
25  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
480  
460  
Tj = 25°C  
A
tp = 10 ms  
2
²
²
Tj = 25°C  
1060  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 60 Hz  
tp = 20 µs  
Tj = 125°C  
A/µs  
I
= 2 x I , tr ≤ 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2004 - Ed: 3  
1/5  
TN4035-600G  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Value  
Unit  
I
MIN.  
MAX.  
MAX.  
MIN.  
3.5  
35  
GT  
mA  
V
V
= 12 V  
R = 33 Ω  
D
L
V
1.3  
V
V
GT  
V
Tj = 125°C  
= V  
R = 3.3 kΩ  
0.2  
75  
GD  
D
DRM  
L
I
I = 500 mA Gate open  
MAX.  
MAX.  
MIN.  
mA  
mA  
V/µs  
V
H
T
I
I = 1.2 I  
G
150  
1000  
1.6  
0.85  
10  
L
GT  
= 67 % V  
V
I
Gate open  
= 80 A tp = 380 µs  
dV/dt  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
D
DRM  
V
MAX.  
MAX.  
MAX.  
MAX.  
TM  
TM  
V
Threshold voltage  
V
t0  
R
d
Dynamic resistance  
mΩ  
µA  
mA  
I
I
5
DRM  
RRM  
V
= V  
RRM  
DRM  
4
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
0.8  
Unit  
R
Junction to case (DC)  
Junction to ambient (DC)  
°C/W  
°C/W  
th(j-c)  
th(j-a)  
2
R
45  
S = 1cm (*)  
* Surface under tab/Epoxy printed circuit board FR4, copper thickness 85µm  
ORDERING INFORMATION  
TN 40 35 - 600 G (-TR)  
STANDARD  
SCR  
SERIES  
PACKING MODE:  
Blank:Tube  
-TR:Tape & Reel  
CURRENT: 40A  
VOLTAGE:  
600: 600V  
SENSITIVITY:  
35: 35mA  
PACKAGE:  
G: D2PAK  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
Base Quantity  
Packing mode  
TN4035-600G  
TN4035-600G  
TN4035-600G  
1.5 g  
1.5 g  
50  
Tube  
TN4035-600G-TR  
1000  
Tape & Reel  
■ Epoxy meets UL94, V0  
2/5  
TN4035-600G  
Fig. 1: Maximum average power dissipation  
versus average on-state current.  
Fig. 2: Average and DC on-state current versus  
case temperature.  
IT(av)(A)  
P(W)  
50  
40  
α = 180°  
35  
D.C.  
40  
30  
25  
20  
15  
30  
α = 180°  
20  
10  
360°  
10  
5
IT(av)(A)  
Tcase(°C)  
α
0
0
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature.  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]  
K = [Zth/Rth]  
2.5  
1.00  
2.0  
Zth(j-c)  
IGT  
1.5  
0.10  
0.01  
Zth(j-a)  
IH & IL  
1.0  
0.5  
tp(s)  
1E+0  
Tj(°C)  
0.0  
-40 -20  
0
20  
40  
60  
80 100 120 140  
1E-3  
1E-2  
1E-1  
1E+1  
1E+2 5E+2  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
Fig. 6: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding value of I²t.  
a
2
2
ITSM(A),I t(A s)  
ITSM(A)  
5000  
1000  
500  
450  
Tj initial = 25 °C  
400  
350  
300  
250  
200  
150  
100  
50  
tp = 10ms  
One cycle  
ITSM  
2
Non repetitive  
I t  
Tj initial = 25°C  
dI/dt  
limitattion  
Repetitive  
Tcase = 95°C  
Number of cycles  
tp(ms)  
0
100  
1
10  
100  
1000  
0.01  
0.10  
1.00  
10.00  
3/5  
TN4035-600G  
Fig. 7: On-state characteristics (maximum  
values).  
Fig. 8: Thermal resistance junction to ambient  
versus surface under tab (Epoxy printed circuit  
board FR4, copper thickness: 35µm)  
ITM(A)  
Rth(j-a) (°C/W)  
500  
80  
70  
60  
50  
40  
30  
20  
Tj max.:  
Vto = 0.85V  
Rd = 10mΩ  
100  
Tj = Tj max.  
10  
Tj = 25°C  
10  
S(cm²)  
VTM(V)  
0
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
0
10  
20  
30  
40  
50  
4/5  
TN4035-600G  
PACKAGE MECHANICAL DATA  
2
D PAK  
JEDEC REFERENCE: TO-263  
DIMENSIONS  
REF.  
Millimeters  
Inches  
A
E
Min. Typ. Max. Min. Typ. Max.  
C2  
L2  
A
A1  
A2  
B
4.30  
2.49  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
0.03  
L
0.70  
B2  
C
1.25 1.40  
0.45  
0.048 0.055  
L3  
A1  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
C2  
D
1.21  
B2  
R
C
B
8.95  
E
10.00  
4.88  
G
G
A2  
L
15.00  
1.27  
2.0 MIN.  
FLAT ZONE  
L2  
L3  
R
1.40  
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
2
D PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All rights reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States  
http://www.st.com  
5/5  

相关型号：

TN4036

 TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 1A I(C) | TO-237VAR
ETC

TN4036/D10Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D27Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D28Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D29Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D74Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4036/D89Z

 1000mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
TI

TN4037

 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
ETC

TN4050-400G

 40A, 200V, SCR
STMICROELECTR

TN4050-600G

 40A, 400V, SCR
STMICROELECTR

TN4050-800G

 40A, 600V, SCR
STMICROELECTR

TN40A

 Topstek Current Transducers
TOPSTEK
©2020 ICPDF网 联系我们和版权申明