TS512IA [STMICROELECTRONICS]

HIGH SPEED PRECISION DUAL OPERATIONAL AMPLIFIERS; 高速精密双运算放大器


型号：	TS512IA
厂家：	ST
描述：	HIGH SPEED PRECISION DUAL OPERATIONAL AMPLIFIERS 高速精密双运算放大器运算放大器
文件：	总7页 (文件大小：57K)
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TS512,A

HIGH SPEED PRECISION

DUAL OPERATIONAL AMPLIFIERS

LOW OFFSET VOLTAGE : 500µV max.

LOW POWER CONSUMPTION

SHORT CIRCUIT PROTECTION

LOW DISTORTION, LOW NOISE

HIGH GAIN-BANDWIDTH PRODUCT

HIGH CHANNEL SEPARATION

ESD INTERNAL PROTECTION

MACROMODEL INCLUDED IN THIS

SPECIFICATION

DIP8

(Plastic Package)

SO8

(Plastic Micropackage)

DESCRIPTION

The TS512 is a high performance dual operational

amplifier with frequency and phase compensation

built intothe chip. The internalphasecompensation

allows stable operation as voltage follower in spite

of its high gain-bandwidth products.

The circuit presents very stable electrical charac-

teristics over the entire supply voltage range, and

is particularlyintendedfor professionalandtelecom

applications (active filter, etc).

ORDER CODES

Package

Part Number

Temperature Range

•

TS512I

-40, +125^oC

TS512AI

•

PIN CONNECTIONS (top view)

Output 1 1

Output

Inverting Input 1 2

Inverting Input 2

Non-inverting Input 1 3

Non-inverting Input 2

March 1998

TS512,A

SCHEMATIC DIAGRAM (1/2 TS512)

Non-inverting

input

Inverting

input

Q13

Q14

Output

Q12

Q10

Q11

Q18

Q19

Q17

Q15

Q16

Q23

Q21

Q22

Q20

R10

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

±18

Unit

V_CC

V_i

Supply Voltage

Input Voltage

±V_CC

V_id

Differential Input Voltage

± (V_CC- 1)

-40 to +125

500

T_oper

P_tot

T_j

Operating Free Air Temperature Range

Power Dissipation at T_amb= 70^oC

Junction Temperature

^oC

150

T_stg

Storage Temperature Range

-65 to +150

^oC

2/7

TS512,A

ELECTRICAL CHARACTERISTICS (V_CC= ±15V, T_amb= 25^oC, unless otherwise specified)

Symbol

I_CC

Parameter

Supply Current

Test Conditions

Min.

Typ.

0.7

Max.

1.2

Unit

I_ib

Input Bias Current

150

300

T_min.< T_op< T_max

R_i

Input Resistance

f = 1kHz

MΩ

V_io

Input Offset Voltage

TS512

TS512A

0.5

2.5

0.5

_min. < T_op< T_max

TS512

TS512A

3.5

1.5

DV_io

I_io

Input Offset Voltage Drift

Input Offset Current

T_min. < T_op< T_max

µV/^oC

T_min. < T_op< T_max

DI_io

Input Offset Current Drift

T_min. < T_op< T_max

0.08

°C

I_os

Output Short Circuit Current

Large Signal Voltage Gain

A_vd

R_L= 2kΩ

V_CC= ±15V

V_CC= ±4V

100

GBP

e_n

Gain-bandwidth Product

f = 100kHz

1.8

MHz

Equivalent Input Noise Voltage

f = 1kHz

√Hz

R_s= 50Ω

R_s= 1kΩ

R_s= 10kΩ

THD

Total Harmonic Distortion

Output Voltage Swing

A_V= 20dB

V_O= 2V_PP

R_L= 2kΩ

0.03

0.1

f = 1kHz

±V_opp

R_L= 2kΩ

V_CC= ±15V

V_CC= ±4V

±13

±3

V_opp

Large Signal Voltage Swing

Slew Rate

R_L= 10kΩ

f = 10kHz

V_PP

V/µs

Unity Gain, R_L= 2kΩ

V_ic= 10V

0.8

1.5

CMR

SVR

Common Mode Rejection Ratio

Supply Voltage Rejection Ratio

V_ic= 1V

f = 100Hz

V_O1/V_O2Channel Separation

f = 1kHz

100

120

3/7

TS512,A

LOW DISTORTION, LOW NOISE

HIGH GAIN-BANDWIDTH PRODUCT

HIGH CHANNEL SEPARATION

LOW OFFSET VOLTAGE : 500µV max.

LOW POWER CONSUMPTION

SHORT CIRCUIT PROTECTION

Applies to : TS512I,AI

** Standard Linear Ics Macromodels, 1993.

** CONNECTIONS :

FIBN 5 1 VOFP 1.000000E-02

* AMPLIFYING STAGE

FIP 5 19 VOFP 9.000000E+02

FIN 5 19 VOFN 9.000000E+02

RG1 19 5 1.727221E+06

RG2 19 4 1.727221E+06

CC 19 5 6.000000E-09

DOPM 19 22 MDTH 400E-12

DONM 21 19 MDTH 400E-12

HOPM 22 28 VOUT 6.521739E+03

VIPM 28 4 1.500000E+02

HONM 21 27 VOUT 6.521739E+03

VINM 5 27 1.500000E+02

GCOMP 5 4 4 5 6.485084E-04

RPM1 5 80 1E+06

* 1 INVERTING INPUT

* 2 NON-INVERTING INPUT

* 3 OUTPUT

* 4 POSITIVEPOWER SUPPLY

* 5 NEGATIVE POWER SUPPLY

.SUBCKT TS512 1 3 2 4 5 (analog)

**********************************************************

.MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F

* INPUT STAGE

CIP 2 5 1.000000E-12

CIN 1 5 1.000000E-12

EIP 10 5 2 5 1

EIN 16 5 1 5 1

RPM2 4 80 1E+06

RIP 10 11 2.600000E+01

RIN 15 16 2.600000E+01

RIS 11 15 1.061852E+02

DIP 11 12 MDTH 400E-12

DIN 15 14 MDTH 400E-12

VOFP 12 13 DC 0

GAVPH 5 82 19 80 2.59E-03

RAVPHGH 82 4 771

RAVPHGB 82 5 771

RAVPHDH 82 83 1000

RAVPHDB 82 84 1000

CAVPHH 4 83 0.331E-09

CAVPHB 5 84 0.331E-09

EOUT 26 23 82 5 1

VOFN 13 14 DC 0

IPOL 13 5 1.000000E-05

CPS 11 15 12.47E-10

VOUT 23 5 0

DINN 17 13 MDTH 400E-12

VIN 17 5 1.500000e+00

ROUT 26 3 6.498455E+01

COUT 3 5 1.000000E-12

DOP 19 25 MDTH 400E-12

VOP 4 25 1.742230E+00

DON 24 19 MDTH 400E-12

VON 24 5 1.742230E+00

.ENDS

DINR 15 18 MDTH 400E-12

VIP 4 18 1.500000E+00

FCP 4 5 VOFP 3.400000E+01

FCN 5 4 VOFN 3.400000E+01

FIBP 2 5 VOFN 1.000000E-02

4/7

TS512,A

ELECTRICAL CHARACTERISTICS

V_CC= ±15V, T_amb= 25^oC (unlessotherwise specified)

Symbol

V_io

Conditions

Value

Unit

A_vd

R_L= 2kΩ

100

V/mV

µA

I_CC

No load, per operator

350

V_icm

V_OH

V_OL

I_sink

-13.5 to 13.5

R_L= 2kΩ

+13

-13

R_L= 2kΩ

V_O= 0V

I_source

GBP

V_O= 0V

R_L= 2kΩ, C_L= 100pF

R_L= 2kΩ

MHz

V/ms

Degrees

1.4

R_L= 2kΩ, C_L= 100pF

5/7

TS512,A

PACKAGE MECHANICAL DATA

8 PINS - PLASTICDIP

Millimeters

Inches

Typ.

Dim.

Min.

Typ.

Max.

Min.

Max.

3.32

0.131

0.51

1.15

0.020

0.045

0.014

0.008

1.65

0.55

0.065

0.022

0.012

0.430

0.384

0.356

0.204

0.304

10.92

9.75

7.95

0.313

2.54

7.62

0.100

0.300

6.6

0260

0.200

0.150

0.060

5.08

3.81

1.52

3.18

0.125

6/7

TS512,A

PACKAGE MECHANICAL DATA

8 PINS - PLASTICMICROPACKAGE (SO)

Millimeters

Dim.

Inches

Typ.

Min.

Typ.

Max.

1.75

0.25

1.65

0.85

0.48

0.25

0.5

Min.

Max.

0.069

0.010

0.065

0.033

0.019

0.010

0.020

0.1

0.004

0.65

0.35

0.19

0.25

0.026

0.014

0.007

0.010

45^o(typ.)

4.8

5.8

5.0

6.2

0.189

0.228

0.197

0.244

1.27

3.81

0.050

0.150

3.8

0.4

4.0

1.27

0.6

0.150

0.016

0.157

0.050

0.024

8^o(max.)

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility

for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.

Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life

support devices or systems without express written approval of SGS-THOMSON Microelectronics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco

The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

7/7

TS512IA [STMICROELECTRONICS]

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