TS820-400T [STMICROELECTRONICS]
8A, 400V, SCR, TO-220AB, PLASTIC, TO-220AB, 3 PIN;
| 型号： | TS820-400T |
| 厂家： | 
ST |
| 描述： | 8A, 400V, SCR, TO-220AB, PLASTIC, TO-220AB, 3 PIN 局域网 栅 栅极 |
| 文件： | 总6页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS820-B/T
SENSITIVE SCR
FEATURES
A
IT(RMS) =8A
VDRM/VRRM = 400, 600V, 700V
IGT < 200µA
A
SMDPACKAGE
A
G
G
A
K
K
DESCRIPTION
The TS820-B/Tseries of SCR use a highperform-
ance TOPGLASSPNPN technology.
TO-220AB
(Plastic)
TS820-T
DPAK
(Plastic)
TS820-B
The parts are intended for general purpose appli-
cations using surface mount or through hole tech-
nology.
ABSOLUTE RATINGS
Symbol
(limiting values)
Parameter
Value
Unit
IT(RMS)
IT(AV)
ITSM
RMSon-statecurrent
(180 conductionangle)
Tc=110°C
Tc=110°C
8
A
°
Averageon-statecurrent
(180° conductionangle)
5
A
A
Non repetitive surge peak on-statecurrent
(Tj initial= 25°C )
tp = 8.3ms
tp = 10ms
73
70
I2t
I2t Valuefor fusing
tp = 10ms
24
A2s
µ
A/ s
dI/dt
Critical rateof rise of on-statecurrent
100
IG = 10 mA
dIG /dt = 0.1 A/µs.
Storage junctiontemperaturerange
Operatingjunction temperaturerange
°
C
Tstg
Tj
- 40 to +150
- 40 to +125
Maximum temperaturefor soldering during 10s
Tl
260
°C
Unit
V
Symbol
Parameter
TS820-
400B/T
600B/T
700B/T
VDRM
VRRM
Repetitivepeak off-statevoltage
400
600
700
Tj = 125°C
RGK = 220 Ω
November 1998 - Ed: 6A
1/6
TS820-B/T
THERMAL RESISTANCES
Symbol
Parameter
Value
70
Unit
Rth(j-a)
Junctionto ambient(S=0.5cm2)
DPAK
°C/W
TO-220AB
60
°
C/W
Rth(j-c)
Junctionto case for DC
DPAK/ TO-220AB
2.0
GATE CHARACTERISTICS
(maximumvalues)
µ
µ
IGM = 1.2 A (tp = 20 s)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 s)
ELECTRICALCHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V (DC) RL=140Ω
Type
Value
200
0.8
Unit
µA
V
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 125°C MIN
Ω
VGT
VD=12V (DC) RL=140
VGD
VD=VDRM RL=3.3kΩ
0.1
V
Ω
RGK = 220
VRG
IH
IRG = 10µA
Tj= 25°C
MIN
8
5
V
mA
V
IT= 50mA
RGK = 1 KΩ
Tj= 25°C MAX
ITM= 16A tp= 380µs
°
VTM
IDRM
IRRM
dV/dt
Tj= 25 C MAX
1.6
5
Ω
VD= VDRM
VR= VRRM
RGK = 220
Tj= 25°C MAX
Tj= 125°C MAX
Tj= 125°C MIN
µA
RGK = 220 Ω
1
mA
V/µs
VD=67%VDRM RGK = 220 Ω
5
ORDERING INFORMATION
Add ”-TR” suffix for Tape & Reel shipment
TS 8 20 - 600 B/T
PACKAGE:
SENSITIVESCR
CURRENT
B: DPAK
T: TO-220
SENSITIVITY
VOLTAGE
2/6
TS820-B/T
Fig. 1:
Fig. 2:
Correlation between maximum average
Maximum average power dissipation ver-
sus averageon-statecurrent.
powerdissipationandmaximumallowabletempera-
tures (Tamb and Tcase) for different thermal resis-
tancesheatsink+ contact.
P(W)
P(W)
Tcase (°C)
10
10
8
α = 180°
α = 180°
Rth=10°C/W
8
Rth=5°C/W
Rth=15°C/W
α = 120°
Rth=0°C/W
110
α = 90°
D.C.
α = 60°
6
4
2
0
6
α = 30°
115
120
4
Rth=37°C/W
360°
2
Tamb(°C)
α
IT(av)(A)
125
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
Fig.3-1:
case temperature(TO-220AB).
Fig. 3-2:
Averageand D.C.on-statecurrentversus
ambienttemperature(devicemountedon FR4with
recommended pad layout) (DPAK) .
AverageandD.C. on-statecurrentversus
IT(av)(A)
IT(av)(A)
10
2.2
2.0
1.8
DC
DC
8
1.6
1.4
1.2
6
α=180°
α=180°
1.0
0.8
0.6
0.4
0.2
0.0
4
2
Tcase(°C)
Tamb(°C)
50 75
0
0
25
50
75
100
125
0
25
100
125
Fig. 4-1: Relative variation of thermal impedance
junction to case versuspulse duration.
Fig. 4-5: Relative variation of thermal impedance
junction to ambient versus pulse duration (recom-
mendedpad layout, FR4 PC board) (DPAK).
K=[Zth(j-c)/Rth(j-c)]
K=[Zth(j-a)/Rth(j-a)]
1.0
1.00
0.5
0.2
0.10
tp(s)
tp(s)
0.1
0.01
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
3/6
TS820-B/T
Fig.5:
Fig. 6:
Non repetitive surge peak on-state current
versus number of cycles.
Relativevariationof gatetriggercurrentand
holdingcurrent versusjunction temperature.
IGT,IH [Tj] / IGT,IH [Tj=25°C]
ITSM(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
Tj initial=25°C
F=50Hz
IGT
IH
Tj(°C)
40 60 80 100 120 140
Number of cycles
10 100
0
1
1000
-40 -20
0
20
Fig. 7:
Fig. 8:
On-statecharacteristics(maximumvalues).
Non repetitive surge peak on-state current
for a sinusoidalpulsewith width tp<10ms,and cor-
respondingvalue of I2t.
ITM(A)
ITSM(A),I t(A s)
100.0
10.0
1.0
300
Tj initial=25°C
ITSM
Tj=Tj max.
100
50
Tj=25°C
I t
Tj max.:
Vto=0.85V
Rd=46mΩ
20
tp(ms)
VTM(V)
10
0.1
1
2
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig.9:
Thermalresistancejunctionto ambient ver-
Fig. 10:Typicalreflow solderingheatprofile, either
for mountingon FR4 or metal-backedboards.
suscoppersurfaceunder tab (Epoxyprinted circuit
board FR4, copperthickness:35µm) (DPAK).
T (°C)
Rth(j-a) (°C/W)
250
245°C
100
215°C
200
80
60
40
20
Epoxy FR4
board
150
100
Metal-backed
board
50
S(cm )
0
t (s)
0
2
4
6
8
10 12 14 16 18 20
0
0
40
80
120 160 200 240 280 320 360
4/6
TS820-B/T
PACKAGE MECHANICAL DATA
DPAK(Plastic)
DIMENSIONS
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
REF.
E
A
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40 0.086
1.10 0.035
0.23 0.001
0.90 0.025
5.40 0.204
0.60 0.017
0.60 0.018
6.20 0.236
6.60 0.251
4.60 0.173
10.10 0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C2
L2
B2
C
D
H
C2
D
L4
A1
B
E
G
C
G
H
A2
L2
L4
V2
0.80
0.031
0.60 MIN.
0.60
1.00 0.023
0.039
0°
8°
0°
8°
V2
FOOT PRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7
3
1.6
1.6
2.3 2.3
5/6
TS820-B/T
PACKAGE MECHANICAL DATA
TO-220AB(Plastic)
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
Max.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
A
C
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
A
H2
Dia
C
D
L5
L7
E
F
L6
F1
F2
G
L2
F2
D
F1
L9
G1
H2
L2
L4
L5
L6
L7
L9
M
L4
16.4typ.
0.645 typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
G1
E
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
Type
Marking
Package
Weight
Base qty
75
Delivery mode
Tube
TS820-B
TS820x00B
DPAK
0.3 g.
2500
50
Tapeand Reel
Tube
TS820-T
TS820x00T
TO-220AB
2 g.
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all informationpreviously supplied.
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proval of STMicroelectronics.
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