TS822AILT [STMICROELECTRONICS]

TS822

2.5V micropower shunt voltage reference

Features

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2.50V typical output voltage

Ultra low current consumption: 40µA typ.

High precision @ 25°C

– ±2% (standard version)

– ±1% (A grade)

High stability when used with capacitive loads

Industrial temperature range: -40°C to +85°C

100ppm/°C maximum temperature coefficient

Pin connections

(Top view)

L

SOT23-3L

(Plastic micropackage)

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Applications

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Computers

Instrumentation

Battery chargers

Switch mode power supply

Battery operated equipment

Description

The TS822 is a low power shunt voltage reference

providing a stable 2.5V output voltage over the

industrial temperature range (-40°C to +85°C).

Availabe in SOT23-3 surface mount package, it

can be designed in applications where space

saving is critical.

The low operating current is a key advantage for

power restricted designs. In addition, the TS822 is

very stable and can be used in a broad range of

application conditions.

August 2007

Rev 2

1/9

www.st.com

9

Absolute maximum ratings and operating conditions

TS822

1

Absolute maximum ratings and operating conditions

Table 1.

Symbol

I

k

I

f

P

d

T

stg

ESD

T

lead

Absolute maximum ratings

Parameter

Reverse breakdown current

Forward current

Power dissipation

(1)

SOT23-3

Storage temperature

Human body model (HBM)

(2)

Machine model (MM)

(3)

Lead temperature (soldering, 10 seconds)

Value

20

10

360

-65 to +150

2

200

260

Unit

mA

mA

mW

°C

kV

V

°C

1. P

d

is calculated with T

amb

= 25°C and R

thja

= 340°C/W for the SOT23-3L package

2. Human body model: 100pF discharged through a 1.5kΩ resistor between two pins of the device, done for

all couples of pin combinations with other pins floating.

3. Machine model: a 200pF cap is charged to the specified voltage, then discharged directly between two pins

of the device with no external series resistor (internal resistor < 5Ω), done for all couples of pin

combinations with other pins floating.

Table 2.

Symbol

I

k-min

I

k-max

T

oper

Operating conditions

Parameter

Minimum operating current

Maximum operating current

Operating free air temperature range

Value

50

15

-40 to +85

Unit

μA

mA

°C

2/9

TS822

Electrical characteristics

2

Table 3.

Symbol

Electrical characteristics

TS822 (2% precision) T

amb

= 25°C

(1)

(unless otherwise specified)

Parameter

Reverse breakdown voltage

V

k

Reverse breakdown voltage tolerance

Test conditions

I

k

= 100μA

I

k

= 100μA

-40°C < T

amb

< +85°C

T = 25°C

I

k-min

Minimum operating current

-40°C < T

amb

< +85°C

Average temperature coefficient

I

k

= 100μA

I

k-min

< I

k

< 1mA

-40°C < T

amb

< +85°C

1mA < I

k

< 15mA

-40°C < T

amb

< +85°C

I

k

= I

k-min

to 1mA

-40°C < T

amb

< +85°C

I

k

= 1 to 15mA

-40°C < T

amb

< +85°C

Long term stability

Wide band noise

I

k

= 100μA, t = 1000hrs

I

k

= 100μA, 10Hz < f < 10kHz

30

0.4

2.5

0.4

0.2

120

35

60

100

1

1.2

mV

8

10

1

1.2

0.6

0.7

Min.

2.45

-50

-66

40

Typ.

2.5

Max.

2.55

50

66

50

Unit

V

mV

μA

ppm/°C

ΔV

ref

/ΔT

ΔV

k

/ΔI

k

Reverse breakdown voltage change

with operating current range

R

ka

Reverse static impedance

Ω

K

vh

En

ppm

nV/√Hz

1. Limits are 100% production tested at 25°C. Behavior at temperature range limits is guaranteed by correlation and design.

Table 4.

Symbol

TS822A (1% precision) T

amb

= 25°C

(1)

(unless otherwise specified)

Parameter

Reverse breakdown voltage

Test conditions

I

k

= 100μA

I

k

= 100μA

-40°C < T

amb

< +85°C

T = 25°C

Min.

2.475

-25

-41

40

Typ.

2.5

Max.

2.525

25

41

50

60

30

0.4

2.5

0.4

0.2

120

35

100

1

1.2

mV

8

10

1

1.2

0.6

0.7

Unit

V

mV

μA

ppm/°C

V

k

Reverse breakdown voltage tolerance

I

k-min

ΔV

ref

/ΔT

Minimum operating current

-40°C < T

amb

< +85°C

Average temperature coefficient

I

k

= 100μA

I

k-min

< I

k

< 1mA

-40°C < T

amb

< +85°C

1mA < I

k

< 15mA

-40°C < T

amb

< +85°C

I

k

= I

k-min

to 1mA

-40°C < T

amb

< +85°C

I

k

= 1mA to 15mA

-40°C < T

amb

< +85°C

Long term stability

Wide band noise

I

k

= 100μA, t = 1000hrs

I

k

= 100μA, 10Hz < f < 10kHz

ΔV

k

/Δ

Ik

Reverse breakdown voltage change

with operating current range

R

ka

Reverse static impedance

Ω

K

vh

En

ppm

nV/√Hz

1. Limits are 100% production tested at 25°C. Behavior at temperature range limits is guaranteed by correlation and design.

3/9

Electrical characteristics

TS822

Figure 1.

Reference voltage versus cathode

current

Figure 2.

Minimum operating current

Reference voltage versus cathode current

15

3

2.5

Minimum operating current

Cathode current (mA)

10

Cathode voltage (V)

T=+25°C

2

1.5

1

0.5

5

T=+85°C

T=-40°C

0

-5

-0.5

0

0.5

1

1.5

2

2.5

Cathode voltage (V)

0

0

20

Cathode current (µA)

40

Figure 3.

Test circuit

Figure 4.

Reference voltage versus

temperature

Reference voltage versus Temperature

Test circuit

2.56

+2%

+1%

R

Cathode voltage (V)

2.54

2.52

2.5

2.48

2.46

2.44

-40

-20

0

Ik=(Vin-Vref)/R

Vout=Vref

Vin

-1%

-2%

20

40

60

80

Temperature (°C)

Figure 5.

Static impedance (R

ka

) versus

temperature

Static impedance (Rka) versus

temperature

Figure 6.

Noise voltage versus frequency

Noise voltage versus Frequency

1500

Noise voltage (nV/VHz)

C

L

=100µF

C

L

=10µF

1000

C

L

=1µF

500

C

L

=100nF

C

L

=0

0

1000.0

100.0

Frequency (KHz)

0.2

Static impedance (Ohms)

0.15

0.1

0.05

0

-40

-20

0

20

40

60

80

0.1

1.0

10.0

Temperature (°C)

4/9

TS822

Electrical characteristics

Figure 7.

Test circuit for pulse response at

I

k

=100µA

Figure 8.

Pulse response for I

k

=100µA

Pulse response for Ik=100µA

Test circuit for pulse response at Ik=100µA

25k ohm

Ik=100µA

5

Input

Output

Intput

Pulse

Generator

0

2.5

Output

0

0

5

10

Time (µs)

15

20

Figure 9.

Pulse response for I

k

=100µA

(detailed part)

Pulse response for Ik=100µA

Detailed part

5V

Input

Figure 10. Pulse response for I

k

=100µA

(detailed part)

Pulse response for Ik=100µA

Detailed part

5V

Input

0V

Output

0V

0

0.5

1

Time (µs)

1.5

2

2.5V

2.5V

Output

0V

0V

0

1

2

3

4

5

Time (µs)

Figure 11. Test circuit for pulse response at

I

k

=100mA

Figure 12. Pulse response for I

k

=100mA

Pulse response for Ik=1mA

Test circuit for pulse response at Ik=1mA

5V

2.5k ohm

Ik=1mA

Input

Output

Intput

Pulse

Generator

0V

2.5V

0V

Output

0

1

2

3

4

5

Time (µs)

5/9