TS822AILT [STMICROELECTRONICS]

2.5V micropower shunt voltage reference; 2.5V微功耗并联型电压基准
TS822AILT
元器件型号: TS822AILT
生产厂家: STMICROELECTRONICS    STMICROELECTRONICS
描述和应用:

2.5V micropower shunt voltage reference
2.5V微功耗并联型电压基准

电源电路参考电压源光电二极管
PDF文件: 总9页 (文件大小:143K)
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型号参数:TS822AILT参数
Brand NameSTMicroelectronics
是否Rohs认证 符合
生命周期Active
零件包装代码SOT-23
包装说明TSSOP, TO-236
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8542.39.00.01
Factory Lead Time16 weeks
风险等级1.76
模拟集成电路 - 其他类型TWO TERMINAL VOLTAGE REFERENCE
JESD-30 代码R-PDSO-G3
JESD-609代码e3
长度2.9 mm
湿度敏感等级1
功能数量1
输出次数1
端子数量3
最高工作温度85 °C
最低工作温度-40 °C
最大输出电压2.525 V
最小输出电压2.475 V
标称输出电压2.5 V
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装等效代码TO-236
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.12 mm
子类别Voltage References
表面贴装YES
最大电压温度系数100 ppm/ °C
温度等级INDUSTRIAL
端子面层Tin (Sn)
端子形式GULL WING
端子节距0.95 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
微调/可调输出NO
最大电压容差1%
宽度1.3 mm
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
TS822
2.5V micropower shunt voltage reference
Features
2.50V typical output voltage
Ultra low current consumption: 40µA typ.
High precision @ 25°C
– ±2% (standard version)
– ±1% (A grade)
High stability when used with capacitive loads
Industrial temperature range: -40°C to +85°C
100ppm/°C maximum temperature coefficient
Pin connections
(Top view)
L
SOT23-3L
(Plastic micropackage)
Applications
Computers
Instrumentation
Battery chargers
Switch mode power supply
Battery operated equipment
Description
The TS822 is a low power shunt voltage reference
providing a stable 2.5V output voltage over the
industrial temperature range (-40°C to +85°C).
Availabe in SOT23-3 surface mount package, it
can be designed in applications where space
saving is critical.
The low operating current is a key advantage for
power restricted designs. In addition, the TS822 is
very stable and can be used in a broad range of
application conditions.
August 2007
Rev 2
1/9
www.st.com
9
Absolute maximum ratings and operating conditions
TS822
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
I
k
I
f
P
d
T
stg
ESD
T
lead
Absolute maximum ratings
Parameter
Reverse breakdown current
Forward current
Power dissipation
(1)
SOT23-3
Storage temperature
Human body model (HBM)
(2)
Machine model (MM)
(3)
Lead temperature (soldering, 10 seconds)
Value
20
10
360
-65 to +150
2
200
260
Unit
mA
mA
mW
°C
kV
V
°C
1. P
d
is calculated with T
amb
= 25°C and R
thja
= 340°C/W for the SOT23-3L package
2. Human body model: 100pF discharged through a 1.5kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
3. Machine model: a 200pF cap is charged to the specified voltage, then discharged directly between two pins
of the device with no external series resistor (internal resistor < 5Ω), done for all couples of pin
combinations with other pins floating.
Table 2.
Symbol
I
k-min
I
k-max
T
oper
Operating conditions
Parameter
Minimum operating current
Maximum operating current
Operating free air temperature range
Value
50
15
-40 to +85
Unit
μA
mA
°C
2/9
TS822
Electrical characteristics
2
Table 3.
Symbol
Electrical characteristics
TS822 (2% precision) T
amb
= 25°C
(1)
(unless otherwise specified)
Parameter
Reverse breakdown voltage
V
k
Reverse breakdown voltage tolerance
Test conditions
I
k
= 100μA
I
k
= 100μA
-40°C < T
amb
< +85°C
T = 25°C
I
k-min
Minimum operating current
-40°C < T
amb
< +85°C
Average temperature coefficient
I
k
= 100μA
I
k-min
< I
k
< 1mA
-40°C < T
amb
< +85°C
1mA < I
k
< 15mA
-40°C < T
amb
< +85°C
I
k
= I
k-min
to 1mA
-40°C < T
amb
< +85°C
I
k
= 1 to 15mA
-40°C < T
amb
< +85°C
Long term stability
Wide band noise
I
k
= 100μA, t = 1000hrs
I
k
= 100μA, 10Hz < f < 10kHz
30
0.4
2.5
0.4
0.2
120
35
60
100
1
1.2
mV
8
10
1
1.2
0.6
0.7
Min.
2.45
-50
-66
40
Typ.
2.5
Max.
2.55
50
66
50
Unit
V
mV
μA
ppm/°C
ΔV
ref
/ΔT
ΔV
k
/ΔI
k
Reverse breakdown voltage change
with operating current range
R
ka
Reverse static impedance
Ω
K
vh
En
ppm
nV/√Hz
1. Limits are 100% production tested at 25°C. Behavior at temperature range limits is guaranteed by correlation and design.
Table 4.
Symbol
TS822A (1% precision) T
amb
= 25°C
(1)
(unless otherwise specified)
Parameter
Reverse breakdown voltage
Test conditions
I
k
= 100μA
I
k
= 100μA
-40°C < T
amb
< +85°C
T = 25°C
Min.
2.475
-25
-41
40
Typ.
2.5
Max.
2.525
25
41
50
60
30
0.4
2.5
0.4
0.2
120
35
100
1
1.2
mV
8
10
1
1.2
0.6
0.7
Unit
V
mV
μA
ppm/°C
V
k
Reverse breakdown voltage tolerance
I
k-min
ΔV
ref
/ΔT
Minimum operating current
-40°C < T
amb
< +85°C
Average temperature coefficient
I
k
= 100μA
I
k-min
< I
k
< 1mA
-40°C < T
amb
< +85°C
1mA < I
k
< 15mA
-40°C < T
amb
< +85°C
I
k
= I
k-min
to 1mA
-40°C < T
amb
< +85°C
I
k
= 1mA to 15mA
-40°C < T
amb
< +85°C
Long term stability
Wide band noise
I
k
= 100μA, t = 1000hrs
I
k
= 100μA, 10Hz < f < 10kHz
ΔV
k
Ik
Reverse breakdown voltage change
with operating current range
R
ka
Reverse static impedance
Ω
K
vh
En
ppm
nV/√Hz
1. Limits are 100% production tested at 25°C. Behavior at temperature range limits is guaranteed by correlation and design.
3/9
Electrical characteristics
TS822
Figure 1.
Reference voltage versus cathode
current
Figure 2.
Minimum operating current
Reference voltage versus cathode current
15
3
2.5
Minimum operating current
Cathode current (mA)
10
Cathode voltage (V)
T=+25°C
2
1.5
1
0.5
5
T=+85°C
T=-40°C
0
-5
-0.5
0
0.5
1
1.5
2
2.5
Cathode voltage (V)
0
0
20
Cathode current (µA)
40
Figure 3.
Test circuit
Figure 4.
Reference voltage versus
temperature
Reference voltage versus Temperature
Test circuit
2.56
+2%
+1%
R
Cathode voltage (V)
2.54
2.52
2.5
2.48
2.46
2.44
-40
-20
0
Ik=(Vin-Vref)/R
Vout=Vref
Vin
-1%
-2%
20
40
60
80
Temperature (°C)
Figure 5.
Static impedance (R
ka
) versus
temperature
Static impedance (Rka) versus
temperature
Figure 6.
Noise voltage versus frequency
Noise voltage versus Frequency
1500
Noise voltage (nV/VHz)
C
L
=100µF
C
L
=10µF
1000
C
L
=1µF
500
C
L
=100nF
C
L
=0
0
1000.0
100.0
Frequency (KHz)
0.2
Static impedance (Ohms)
0.15
0.1
0.05
0
-40
-20
0
20
40
60
80
0.1
1.0
10.0
Temperature (°C)
4/9
TS822
Electrical characteristics
Figure 7.
Test circuit for pulse response at
I
k
=100µA
Figure 8.
Pulse response for I
k
=100µA
Pulse response for Ik=100µA
Test circuit for pulse response at Ik=100µA
25k ohm
Ik=100µA
5
Input
Output
Intput
Pulse
Generator
0
2.5
Output
0
0
5
10
Time (µs)
15
20
Figure 9.
Pulse response for I
k
=100µA
(detailed part)
Pulse response for Ik=100µA
Detailed part
5V
Input
Figure 10. Pulse response for I
k
=100µA
(detailed part)
Pulse response for Ik=100µA
Detailed part
5V
Input
0V
Output
0V
0
0.5
1
Time (µs)
1.5
2
2.5V
2.5V
Output
0V
0V
0
1
2
3
4
5
Time (µs)
Figure 11. Test circuit for pulse response at
I
k
=100mA
Figure 12. Pulse response for I
k
=100mA
Pulse response for Ik=1mA
Test circuit for pulse response at Ik=1mA
5V
2.5k ohm
Ik=1mA
Input
Output
Intput
Pulse
Generator
0V
2.5V
0V
Output
0
1
2
3
4
5
Time (µs)
5/9
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