TS912A [STMICROELECTRONICS]
Rail-to-rail CMOS dual operational amplifier;
| 型号： | TS912A |
| 厂家： | 
ST |
| 描述： | Rail-to-rail CMOS dual operational amplifier |
| 文件： | 总21页 (文件大小：1107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS912, TS912A, TS912B
Rail-to-rail CMOS dual operational amplifier
Datasheet −production data
Features
■ Rail-to-rail input and output voltage ranges
■ Single (or dual) supply operation
N
from 2.7 to 16 V
DIP8
(plastic package)
■ Extremely low input bias current: 1 pA typ.
■ Low input offset voltage: 2 mV max.
■ Specified for 600 Ω and 100 Ω loads
■ Low supply current: 200 μA/amplifier
(V = 3 V)
CC
D
SO-8
■ Latch-up immunity
■ ESD tolerance: 3 kV
(plastic micropackage)
■ Spice macromodel included in this specification
Related products
Pin connections (top view)
■ See TS56x series for better accuracy and
smaller packages
Description
The TS912 device is a rail-to-rail CMOS dual
operational amplifier designed to operate with
a single or dual supply voltage.
The input voltage range V
includes the two
icm
.
+
-
supply rails V
and V
CC
CC
+
The output reaches V - +30 mV, V
-40 mV,
CC
CC
with R = 10 kΩ and V - +300 mV,
L
CC
+
V
-400 mV, with R = 600 Ω.
CC
L
This product offers a broad supply voltage
operating range from 2.7 to 16 V and a supply
current of only 200 μA/amp. (V = 3 V).
CC
Source and sink output current capability is
typically 40 mA (at V = 3 V), fixed by an internal
CC
limitation circuit.
November 2012
Doc ID 2325 Rev 7
1/21
This is information on a product in full production.
www.st.com
21
Contents
TS912, TS912A, TS912B
Contents
1
2
3
4
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3
Schematic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Macromodel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
4.2
Important note concerning this macromodel . . . . . . . . . . . . . . . . . . . . . . 13
Macromodel code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.1
5.2
DIP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
7
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Absolute maximum ratings and operating conditions
1
Absolute maximum ratings and operating conditions
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
(1)
V
Supply voltage
18
18
V
V
CC
(2)
V
Differential input voltage
id
(3)
V
Input voltage
-0.3 to 18
50
V
i
I
Current on inputs
mA
mA
°C
°C
in
I
Current on outputs
130
o
T
Storage temperature
-65 to +150
150
stg
T
Maximum junction temperature
j
(4)
Thermal resistance junction-to-ambient
R
85
DIP8
SO-8
thja
thjc
°C/W
125
(4)
Thermal resistance junction to case
R
41
40
DIP8
SO-8
°C/W
(5)
HBM: human body model
3
kV
V
(6)
ESD
MM: machine model
200
1500
(7)
CDM: charged device model
V
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltages must never exceed VCC+ +0.3 V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from simultaneous short-circuits on all
amplifiers. These values are typical.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations
while the other pins are floating.
7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly
to ground through only one pin. This is done for all pins.
Table 2.
Symbol
Operating conditions
Parameter
Value
Unit
V
V
Supply voltage
2.7 to 16
V
V
CC
Common mode input voltage range
Operating free air temperature range
V
-0.2 to V
+0.2
CC+
icm
CC-
T
-40 to + 125
°C
oper
Doc ID 2325 Rev 7
3/21
Schematic diagram
TS912, TS912A, TS912B
2
Schematic diagram
Figure 1.
Schematic diagram (1/2 TS912)
input
input
4/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Electrical characteristics
3
Electrical characteristics
Table 3.
Symbol
V
= 3 V, V
= 0 V, R , C connected to V /2, T
= 25 °C
CC+
CC-
L
L
CC
amb
(unless otherwise specified)
Parameter
Min.
Typ.
Max.
Unit
Input offset voltage (V = V = V /2)
ic
o
CC
TS912
TS912A
TS912B
10
5
2
V
mV
io
T
≤ T
≤ T
min
amb max
TS912
TS912A
TS912B
12
7
3
ΔV
Input offset voltage drift
5
1
μV/°C
io
(1)
Input offset current
100
200
I
pA
io
T
≤ T
≤ T
min
amb
max
(1)
Input bias current
≤ T ≤ T
1
150
300
I
pA
ib
T
min
amb
max
Supply current (per amplifier, A
= 1, no load)
200
300
400
VCL
I
μA
CC
T
≤ T
≤ T
min
amb max
Common mode rejection ratio
= 0 to 3 V, V = 1.5 V
CMR
SVR
70
dB
dB
V
ic
o
+
Supply voltage rejection ratio (V
= 2.7 to 3.3 V, V = V /2)
50
80
10
CC
o
CC
Large signal voltage gain (R = 10 kΩ, V = 1.2 V to 1.8 V)
3
2
L
o
A
V/mV
vd
T
≤ T
≤ T
min
amb max
High level output voltage (V = 1 V)
id
R = 100 kΩ
2.95
2.9
2.3
L
R = 10 kΩ
2.96
2.6
2
L
R = 600 Ω
L
V
V
OH
R = 100 Ω
L
T
≤ T
≤ T
min
amb max
2.8
2.1
R = 10 kΩ
L
R = 600 Ω
L
Low level output voltage (V = -1 V)
id
R = 100 kΩ
50
70
400
L
R = 10 kΩ
30
300
900
L
R = 600 Ω
L
V
mV
OL
R = 100 Ω
L
T
≤ T
≤ T
min
amb max
R = 10 kΩ
L
100
600
L
R = 600 Ω
Output short-circuit current (V
= 1 V)
id
I
mA
Source (V = V
)
CC-
)
20
20
40
40
o
o
Sink (V = V
o
CC+
Gain bandwidth product
(A = 100, R = 10 kΩ, C = 100 pF, f = 100 kHz)
GBP
0.8
MHz
VCL
L
L
Doc ID 2325 Rev 7
5/21
Electrical characteristics
TS912, TS912A, TS912B
Table 3.
Symbol
V
= 3 V, V
= 0 V, R , C connected to V /2, T
= 25 °C
CC+
CC-
L
L
CC
amb
(unless otherwise specified) (continued)
Parameter
Min.
Typ.
Max.
Unit
+
SR
Slew rate (A
Slew rate (A
= 1, R = 10 kΩ, C = 100 pF, V = 1.3 V to 1.7 V)
0.4
0.3
30
V/μs
V/μs
VCL
VCL
L
L
i
-
SR
= 1, R = 10 kΩ, C = 100 pF, V = 1.3 V to 1.7 V)
L L i
φm
Phase margin
Equivalent input noise voltage (R = 100 Ω, f = 1 kHz)
Degrees
nV/√Hz
en
30
s
1. Maximum values include unavoidable inaccuracies of the industrial tests.
6/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Electrical characteristics
Table 4.
Symbol
V
= 5 V, V
= 0 V, R , C connected to V /2, T
= 25 °C
CC+
CC-
L
L
CC
amb
(unless otherwise specified)
Parameter
Min.
Typ.
Max.
Unit
Input offset voltage (V = V = V /2)
ic
o
CC
TS912
TS912A
TS912B
10
5
2
V
mV
io
T
≤ T
≤ T
amb max
min
TS912
TS912A
TS912B
12
7
3
ΔV
Input offset voltage drift
5
1
μV/°C
io
(1)
Input offset current
100
200
I
I
pA
io
T
≤ T
≤ T
min
amb
max
(1)
Input bias current
≤ T ≤ T
1
150
300
pA
ib
T
min
amb
max
Supply current (per amplifier, A
= 1, no load)
230
350
450
VCL
I
μA
CC
T
≤ T
≤ T
min
amb max
Common mode rejection ratio
= 1.5 to 3.5 V, V = 2.5 V
CMR
SVR
60
55
85
dB
dB
V
ic
o
Supply voltage rejection ratio (V
= 3 to 5 V, V = V /2)
80
40
CC+
o
CC
Large signal voltage gain (R = 10 kΩ, V = 1.5 V to 3.5 V)
10
7
L
o
A
V/mV
vd
T
≤ T
≤ T
min
amb max
High level output voltage (V = 1 V)
id
R = 100 kΩ
4.95
4.9
4.25
L
R = 10 kΩ
4.95
4.55
3.7
L
R = 600 Ω
L
V
V
OH
R = 100 Ω
L
T
≤ T
≤ T
amb max
min
R = 10 kΩ
4.8
4.1
L
R = 600 Ω
L
Low level output voltage (V = -1 V)
id
R = 100 kΩ
50
100
500
L
R = 10 kΩ
40
350
1400
L
R = 600 Ω
L
V
mV
OL
R = 100 Ω
L
T
≤ T
≤ T
amb max
min
R = 10 kΩ
150
750
L
R = 600 Ω
L
Output short-circuit current (V
= 1 V)
id
I
mA
Source (V = V
)
CC-
)
45
45
65
65
o
o
Sink (V = V
o
CC+
Gain bandwidth product
(A
GBP
1
MHz
= 100, R = 10 kΩ, C = 100 pF, f = 100 kHz)
VCL
L
L
+
SR
Slew rate (A
Slew rate (A
= 1, R = 10 kΩ, C = 100 pF, V = 1 V to 4 V)
0.8
0.6
V/μs
V/μs
VCL
L
L
i
-
SR
= 1, R = 10 kΩ, C = 100 pF, V = 1 V to 4 V)
VCL
L
L
i
Doc ID 2325 Rev 7
7/21
Electrical characteristics
TS912, TS912A, TS912B
Table 4.
V
= 5 V, V
= 0 V, R , C connected to V /2, T
= 25 °C
CC+
CC-
L
L
CC
amb
(unless otherwise specified) (continued)
Symbol
Parameter
Min.
Typ.
Max.
Unit
en
Equivalent input noise voltage (R = 100 Ω, f = 1 kHz)
30
120
30
nV/√Hz
dB
s
V
/V
Channel separation (f = 1 kHz)
Phase margin
O1 O2
φm
Degrees
1. Maximum values include unavoidable inaccuracies of the industrial tests.
8/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Electrical characteristics
Table 5.
Symbol
V
= 10 V, V
= 0 V, R , C connected to V /2, T
= 25 °C
amb
CC+
CC-
L
L
CC
(unless otherwise specified)
Parameter
Min.
Typ.
Max.
Unit
Input offset voltage (V = V = V /2)
ic
o
CC
TS912
TS912A
TS912B
10
5
2
V
mV
io
T
≤ T
≤ T
min
amb max
TS912
TS912A
TS912B
12
7
3
ΔV
Input offset voltage drift
5
1
μV/°C
io
(1)
Input offset current
100
200
I
I
pA
io
T
≤ T
≤ T
min
amb
max
(1)
Input bias current
≤ T ≤ T
1
150
300
pA
ib
T
min
amb
max
Supply current (per amplifier, A
= 1, no load)
400
600
700
VCL
I
μA
CC
T
≤ T
≤ T
min
amb max
Common mode rejection ratio
CMR
SVR
dB
V
V
= 3 to 7 V, V = 5 V
60
50
90
75
ic
ic
o
= 0 to 10 V, V = 5 V
o
Supply voltage rejection ratio (V
= 5 to 10 V, V = V /2)
60
90
50
dB
CC+
o
CC
Large signal voltage gain (R = 10 kΩ, V = 2.5 V to 7.5 V)
min
15
10
L
o
A
V/mV
vd
T
≤ T
≤ T
amb max
High level output voltage (V = 1V)
id
R = 100 kΩ
L
9.95
9.85
9
L
R = 10 kΩ
9.95
9.35
7.8
R = 600 Ω
L
V
V
OH
R = 100 Ω
L
T
≤ T
≤ T
min
amb max
R = 10 kΩ
9.8
8.8
L
R = 600 Ω
L
Low level output voltage (V = -1 V)
id
R = 100 kΩ
50
150
800
L
R = 10 kΩ
50
650
2300
L
R = 600 Ω
L
V
mV
OL
R = 100 Ω
L
T
≤ T
≤ T
min
amb max
R = 10 kΩ
150
900
L
R = 600 Ω
L
Output short-circuit current (V
= 1 V)
id
I
mA
Source (V = V
)
CC-
)
45
50
65
75
o
o
Sink (V = V
o
CC+
Gain bandwidth product
(A = 100, R = 10 kΩ, C = 100 pF, f = 100 kHz)
GBP
1.4
MHz
VCL
L
L
Doc ID 2325 Rev 7
9/21
Electrical characteristics
TS912, TS912A, TS912B
Table 5.
Symbol
V
= 10 V, V
= 0 V, R , C connected to V /2, T
= 25 °C
amb
CC+
CC-
L
L
CC
(unless otherwise specified) (continued)
Parameter
Min.
Typ.
Max.
Unit
Slew rate
(A = 1, R = 10 kΩ, C = 100 pF, V = 2.5 V to 7.5 V)
+
SR
1.3
V/μs
VCL
L
L
i
Slew rate
(A = 1, R = 10 kΩ, C = 100 pF, V = 2.5 V to 7.5 V)
-
SR
0.8
V/μs
VCL
L
L
i
φm
Phase margin
40
30
Degrees
en
Equivalent input noise voltage (R = 100 Ω, f = 1 kHz)
nV/√Hz
s
Total harmonic distortion
(A
= 1, R = 10 kΩ, C = 100 pF, V = 4.75 V to 5.25 V,
THD
0.02
1.5
%
VCL
L L o
f = 1 kHz)
Input capacitance
1. Maximum values include unavoidable inaccuracies of the industrial tests.
C
pF
in
10/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Electrical characteristics
Figure 2.
Supply current (each amplifier)
vs. supply voltage
Figure 3.
High level output voltage vs. high
level output current
(V = +5 V, V = +3 V)
CC
CC
Output current
Supply voltage
Figure 4.
Low level output voltage vs. low
level output current
Figure 5.
Input bias current vs. temperature
(V = +3 V, V = +5 V)
CC
CC
Temperature
Output current
Figure 6.
High level output voltage vs. high Figure 7.
level output current
Low level output voltage vs. low
level output current
(V = +16 V, V = +10 V)
(V = 16 V, V = 10 V)
CC
CC
CC CC
Output current
Output current
Doc ID 2325 Rev 7
11/21
Electrical characteristics
TS912, TS912A, TS912B
Figure 8.
Gain and phase vs. frequency
(R = 10 kΩ)
Figure 9.
Gain bandwidth product vs. supply
voltage (R = 10 kΩ)
L
L
Gain
Phase
Frequency
Supply voltage
Figure 10. Phase margin vs. supply voltage
Figure 11. Gain and phase vs. frequency
(R = 10 kΩ)
(R = 600 Ω)
L
L
Gain
Phase
Supply voltage
Frequency
Figure 12. Gain bandwidth product vs. supply Figure 13. Phase margin vs. supply voltage
voltage (R = 600 Ω)
(R = 600 Ω)
L
L
Supply voltage
Supply voltage
12/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Macromodel
Figure 14. Input voltage noise vs. frequency
Frequency
4
Macromodel
4.1
Important note concerning this macromodel
●
All models are a trade-off between accuracy and complexity (i.e. simulation time).
●
Macromodels are not a substitute to breadboarding; rather, they confirm the validity of
a design approach and help to select surrounding component values.
●
A macromodel emulates the nominal performance of a typical device within specified
operating conditions (temperature, supply voltage, for example). Thus the
macromodel is often not as exhaustive as the datasheet, its purpose is to illustrate the
main parameters of the product.
Data derived from macromodels used outside of the specified conditions (V , temperature,
CC
for example) or even worse, outside of the device operating conditions (V , V , for
CC
icm
example), is not reliable in any way.
Doc ID 2325 Rev 7
13/21
Macromodel
TS912, TS912A, TS912B
4.2
Macromodel code
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS912 1 2 3 4 5
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.563355E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.500000E-12
CIN 1 5 1.500000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.655100E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 3.82E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 -0.5000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 -0.5000000E+00
FCP 4 5 VOFP 7.750000E+00
FCN 5 4 VOFN 7.750000E+00
* AMPLIFYING STAGE
FIP 5 19 VOFP 5.500000E+02
FIN 5 19 VOFN 5.500000E+02
RG1 19 5 5.087344E+05
RG2 19 4 5.087344E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 12.33E+02
HZTN 5 30 VOFN 12.33E+02
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3135
VIPM 28 4 150
HONM 21 27 VOUT 3135
VINM 5 27 150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 65
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.924
14/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Macromodel
HSCP 68 25 VSCP1 1E8
DON 69 19 MDTH 400E-12
VON 24 5 2.4419107
HSCN 24 69 VSCN1 1.5E8
VSCTHP 60 61 0.1375
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.75
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
Doc ID 2325 Rev 7
15/21
Package information
TS912, TS912A, TS912B
5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
16/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Package information
5.1
DIP8 package information
Figure 15. DIP8 package outline
Table 6.
DIP8 package mechanical data
Dimensions
Symbol
Millimeters
Typ.
Inches
Min.
Max.
Min.
Typ.
Max.
A
A1
A2
b
5.33
0.210
0.38
2.92
0.36
1.14
0.20
9.02
7.62
6.10
0.015
0.115
0.014
0.045
0.008
0.355
0.300
0.240
3.30
0.46
1.52
0.25
9.27
7.87
6.35
2.54
7.62
4.95
0.56
1.78
0.36
10.16
8.26
7.11
0.130
0.018
0.060
0.010
0.365
0.310
0.250
0.100
0.300
0.195
0.022
0.070
0.014
0.400
0.325
0.280
b2
c
D
E
E1
e
eA
eB
L
10.92
3.81
0.430
0.150
2.92
3.30
0.115
0.130
Doc ID 2325 Rev 7
17/21
Package information
TS912, TS912A, TS912B
5.2
SO-8 package information
Figure 16. SO-8 package outline
Table 7.
SO-8 package mechanical data
Dimensions
Symbol
Millimeters
Typ.
Inches
Min.
Max.
Min.
Typ.
Max.
A
A1
A2
b
1.75
0.25
0.069
0.010
0.10
1.25
0.28
0.17
4.80
5.80
3.80
0.004
0.049
0.011
0.007
0.189
0.228
0.150
0.48
0.23
5.00
6.20
4.00
0.019
0.010
0.197
0.244
0.157
c
D
4.90
6.00
3.90
1.27
0.193
0.236
0.154
0.050
E
E1
e
h
0.25
0.40
0.50
1.27
0.010
0.016
0.020
0.050
L
L1
k
1.04
0.040
0
8°
1°
8°
ccc
0.10
0.004
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Doc ID 2325 Rev 7
TS912, TS912A, TS912B
Ordering information
6
Ordering information
Table 8.
Order codes
Temperature
Part number
Package
Packing
Marking
range
TS912IN
TS912IN
DIP8
Tube
TS912AIN
TS912AIN
TS912ID
912I
912AI
912BI
TS912IDT
TS912AID
SO-8
TS912AIDT
-40 °C, +125 °C
Tube or
tape and reel
TS912BID
TS912BIDT
(1)
TS912IYDT
912IY
912AIY
912BY
SO-8
(1)
(1)
TS912AIYDT
TS912BIYDT
(automotive grade level)
1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening
according to AEC Q001 and Q 002 or equivalent.
Doc ID 2325 Rev 7
19/21
Revision history
TS912, TS912A, TS912B
7
Revision history
Table 9.
Date
Document revision history
Revision
Changes
04-Dec-2001
31-Jul-2005
1
2
First release.
PPAP references inserted in the datasheet, see order codes table.
ESD protection inserted in AMR table.
Some errors in the Order Codes table were corrected.
03-Oct-2005
13-Feb- 2006
3
4
Reorganization of Section 4: Macromodel.
Parameters added in AMR table (T , ESD, R , R ).
j
thja
thjc
Corrected units and ESD footnotes in Table 1: Absolute maximum
ratings.
Corrected misalignments in electrical characteristics table.
16-Oct-2007
5
Updated Section 4: Macromodel.
Added missing automotive grade order codes and footnote in
Table 8: Order codes.
Format update.
01-Feb-2010
06-Nov-2012
6
7
Added TS912A and TS912B part numbers on cover page.
Updated Features (added Related products).
Updated Figure 3, Figure 4, Figure 6 to Figure 13 (added conditions
to differentiate them).
Removed TS912IYD, TS912AIYD, and TS912BIYD device from
Table 8.
Minor corrections throughout document.
20/21
Doc ID 2325 Rev 7
TS912, TS912A, TS912B
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