TSB712 [STMICROELECTRONICS]
Precision rail-to-rail input / output 36 V, 6 MHz op-amps;
| 型号： | TSB712 |
| 厂家： | 
ST |
| 描述： | Precision rail-to-rail input / output 36 V, 6 MHz op-amps |
| 文件： | 总36页 (文件大小：3308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSB711, TSB711A, TSB712
TSB712A, TSB714, TSB714A
Datasheet
Precision rail-to-rail input / output 36 V, 6 MHz op-amps
TSB714 and TSB714A
Features
•
•
•
•
•
•
•
•
•
•
Rail-to-rail input and output
Low offset voltage: 300 µV maximum
Wide supply voltage range: 2.7 V to 36 V
Gain bandwidth product: 6 MHz
Slew rate : 3 V/µs
TSSOP14
SO14
TSB712 and TSB712A
Low noise : 12 nV/√Hz
Integrated EMI filter
2 kV HBM ESD tolerance
MiniSO8
TSB711 and TSB711A
SO8
Extended temperature range : -40 °C to +125 °C
Automotive-grade available
Applications
SOT23-5
•
•
•
•
•
•
•
High-side and low-side current sensing
Hall effect sensors
Data acquisition and instrumentation
Test and measurement equipments
Motor control
Industrial process control
Strain gauge
Maturity status link
Description
TSB711, TSB711A, TSB712, TSB712A,
TSB714, TSB714A
The TSB711, TSB711A, TSB712, TSB712A,TSB714 and TSB714A 6 MHz bandwidth
amplifiers feature rail-to-rail input and output, which is guaranteed to operate from
+2.7 V to +36 V single supply as well as from ±1.35 V to ±18 V dual supplies.
Related products
Single, Dual op-amps for
These amplifiers have the advantage of offering a large span of supply voltage and
an excellent input offset voltage of 300 µV maximum at 25 °C.
TSB571,
TSB572
the low-power consumption
version (380 µA with
2.5 MHz GBP)
The combination of wide bandwidth, slew rate, low noise, rail-to-rail capability and
precision makes the TSB711, TSB711A, TSB712, TSB712A,TSB714 and TSB714A
useful in a wide variety of applications such as: filters, power supply and motor
control, actuator driving, hall effect sensors and resistive transducers.
DS12487 - Rev 6 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Pin description
1
Pin description
Figure 1. TSB711 pin connections (top view)
VCC+
OUT
VCC-
IN+
IN-
SOT23-5
Table 1. TSB711 pin description (SOT23-5)
Pin n°
Pin name
Description
1
2
3
4
5
OUT
Output channel
V
Negative supply voltage
Non-inverting input channel
Inverting input channel
Positive supply voltage
CC-
IN1+
IN-
V
CC+
Figure 2. TSB712 pin connections (top view)
OUT1
IN1-
VCC+
OUT2
IN1+
VCC-
IN2-
IN2+
MiniSO8/SO8
Table 2. TSB712 pin description (miniSO8/SO8)
Pin n°
Pin name
Description
1
2
3
4
5
6
7
8
OUT1
IN1-
Output channel 1
Inverting input channel 1
Non-inverting input channel 1
Negative supply voltage
Non-inverting input channel 2
Inverting input channel 2
Output channel 2
IN1+
V
CC-
IN2+
IN2-
OUT2
V
Positive supply voltage
CC+
DS12487 - Rev 6
page 2/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Pin description
Figure 3. TSB714 pin connections (top view)
Table 3. TSB714 pin description
Pin n°
Pin name
OUT1
IN1-
Description
1
2
Output channel 1
Inverting input channel 1
Non-inverting input channel 1
Positive supply voltage
Non-inverting input channel 2
Inverting input channel 2
Output channel 2
3
IN1+
V
4
CC+
5
IN2+
IN2-
6
7
OUT2
OUT3
IN3-
8
Output channel 3
9
Inverting input channel 3
Non-inverting input channel 3
Negative supply voltage
Non-inverting input channel 4
Inverting input channel 4
Output channel 4
10
11
12
13
14
IN3+
V
CC-
IN4+
IN4-
OUT4
DS12487 - Rev 6
page 3/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Absolute maximum ratings and operating conditions
2
Absolute maximum ratings and operating conditions
Table 4. Absolute maximum ratings
Symbol
Parameter
Value
+40 or ±20
±2
Unit
V
Supply voltage (1)
V
CC
Input voltage differential (2)
Input voltage
V
id
V
V
in
(V ) - 0.2 to (V
) + 0.2
CC+
V
CC-
Input current (3)
I
±10
mA
°C
in
Storage temperature
-65 to +150
Thermal resistance junction-to-ambient (4) (5)
MiniSO-8
R
°C / W
th-ja
190
150
2
T
Maximum junction temperature
°C
kV
j
HBM: human body model (6)
CDM: charged device model (7)
Latch-up immunity
ESD
1
kV
100
mA
1. All voltage values, except the differential voltage are with respect to the network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. The maximum input
voltage differential value may be extended to the condition that the input current is limited to ±10 mA. See Section 5.2 Input
pin voltage range.
3. Input current must be limited by a resistor in series with the inputs when the input voltage is beyond the rails (see
Section 5.2 Input pin voltage range).
4. Short-circuits can cause excessive heating and destructive dissipation.
5.
R are typical values.
th
6. Human body according to JEDEC standard JESD22-A114F.
7. According to ANSI/ESD STM5.3.1.
Table 5. Operating conditions
Symbol
Parameter
Value
V
Supply voltage
2.7 V to 36 V
CC
V
(V ) to (V
) + 0.1 V
Common mode input voltage range
Operating free air temperature range
icm
CC-
CC+
T
-40 °C to +125 °C
oper
DS12487 - Rev 6
page 4/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Electrical characteristics
3
Electrical characteristics
Table 6. Electrical characteristics at VCC = 36 V, VICM = VOUT = VCC / 2, Tamb = 25 °C and RL connected to
VCC / 2 (unless otherwise specified)
Symbol
Parameter
Conditions
DC performance
TSB711A, TSB712A, T = 25 °C,
≤ V ≤ V - 1.5 V
Min.
Typ.
Max.
Unit
±300
±650
±580
±930
±800
±1200
±1100
V
CC-
ICM
CC+
TSB711A, TSB712A, T = 25 °C,
≤ V ≤ V
V
CC-
ICM
CC+
TSB711A, TSB712A, -40 °C < T < 125 °C,
≤ V ≤ V - 1.5 V
V
CC-
ICM
CC+
TSB711A, TSB712A, -40 °C < T < 125 °C,
≤ V ≤ V
V
CC-
ICM
CC+
V
Input offset voltage
µV
io
TSB711, TSB712, T = 25 °C,
≤ V ≤ V -1.5 V
V
CC-
ICM
CC+
TSB711, TSB712, T = 25 °C,
≤ V ≤ V
V
CC-
ICM
CC+
TSB711, TSB712, -40 °C < T < 125 °C,
≤ V ≤ V - 1.5 V
V
CC-
ICM
CC+
TSB711, TSB712, -40 °C < T < 125 °C,
≤ V ≤ V
±1400
2.8
V
CC-
ICM
CC+
-40°C < T < 125 °C (1)
T = 25 °C (2)
ΔV / ΔT
Input offset voltage drift
µV / °C
io
ΔV
Long-term input offset voltage drift
0.57
µV / √mo
io
V
ICM
V
ICM
V
ICM
V
ICM
V
ICM
V
ICM
= V
= V
= V
= V
= V
= V
, T = 25 °C
CC+
0
300
900
0
-40 °C < T < 125 °C
0
CC+,
CC-,
Input bias current (3)
Input offset current (4)
I
IB
T = 25 °C
-40 °C < T < 125 °C
-100
-200
nA
0
CC-,
CC+
CC-
10
10
I
IO
R ≥ 10 kΩ,
L
(V ) + 0.5 V ≤ V
≤ (V
≤ (V
) - 0.5 V,
) - 0.5 V,
110
125
CC-
OUT
CC+
T = 25 °C
A
Open loop gain
VD
R ≥ 10 kΩ,
L
105
115
(V ) + 0.5 V ≤ V
CC-
OUT
CC+
-40 °C < T < 125 °C
dB
(V ) ≤ V
≤ ( V
) - 1.5 V,
CC-
ICM
CC+
130
120
T = 25 °C
Common-mode rejection ratio
(V
≤ V
≤ (V
- 1.5 V,
CMR
CC-)
ICM
CC+)
20 log (∆V
/ ∆V )
IO
110
100
INCM
-40 °C < T < 125 °C
TSB711A,TSB712A (V ) ≤ V
≤ (V ),
CC+
CC-
ICM
DS12487 - Rev 6
page 5/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Electrical characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
T = 25 °C
TSB711A,TSB712A (V ) ≤ V
≤ (V
),
CC-
ICM
CC+
95
90
-40 °C < T < 125 °C
Common-mode rejection ratio
CMR
TSB711, TSB712 (V ) ≤ V
≤ (V
),
CC+
CC-
ICM
20 log (∆V
/ ∆V )
IO
120
125
INCM
T = 25 °C
dB
TSB711 , TSB712 (V ) ≤ V
≤ (V
),
CC+
CC-
ICM
85
-40 °C < T < 125 °C
Power supply rejection ratio
20 log (∆V / ∆V
5 V < (V
) - (V ) < 36 V, V
= V / 2
ICM CC
CC+
CC-
SVR
100
)
IO
-40 °C < T < 125 °C
CC
No load, -40 °C < T < 125 °C
120
200
High level output voltage (drop
voltage from V
I
= 2 mA, -40 °C < T < 125 °C
= 15 mA, -40 °C < T < 125 °C
V
SOURCE
SOURCE
OH
)
CC+
I
1000
120
mV
No load , -40 °C < T < 125 °C
I
= 2 mA, -40 °C < T < 125 °C
= 15 mA , -40 °C < T < 125 °C
V
200
Low level output voltage
SINK
SINK
OL
I
1000
V
V
V
V
= V , T = 25 °C
25
20
25
20
50
50
OUT
OUT
OUT
OUT
CC
I
I
SINK
= V , -40 °C < T < 125 °C
CC
I
mA
mA
OUT
= 0 V, T = 25 °C
SOURCE
= 0 V, -40 °C < T < 125 °C
No load, T = 25 °C
1.8
I
Supply current by op-amp
CC
No load, -40 °C < T < 125 °C
AC performance
3
R = 10 kΩ, C = 100 pF
GBP
SR
Gain bandwidth product
Slew rate
4.5
2.2
6
3
MHz
L
L
9 V step, R = 10 kΩ, C = 100 pF,
L
L
V / µs
A
V
= 1 V/V, 10% to 90%
V
= 1 Vrms , R = 10 kΩ, A = +1,
IN
L
V
0,0003
0,00034
125
f = 1 kHz, BW = 22 kHz
= 1 Vrms , R = 1 kΩ, A = +1,
THD+N Total harmonic distorsion + noise
%
V
IN
L
V
f = 1 kHz, BW = 22 kHz
= 5 Vpp, f = 1 kHz, A = +11,
V
OUT
V
R = 10 kΩ
L
CR
Crosstalk
dB
V
= 5Vpp, f = 10 kHz, A = +11,
V
OUT
100
R = 10 kΩ
L
Φm
Phase margin
At unity gain, 25 °C, 10 kΩ, 100 pF
45
100(5)
20
ᵒ
C
LOAD
Capacitive load drive
pF
f = 10 Hz
e
Input voltage noise density
Input noise voltage
f = 100 Hz
13
nV / √Hz
n
f = 10 kHz
12
e
µV
0.1 Hz ≤ f ≤ 10 Hz
0.5
n p-p
PP
DS12487 - Rev 6
page 6/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Electrical characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
0.15 (6)
i
Input current noise density
f = 1 kHz
pA / √Hz
n
1. See Section 5.4 Input offset voltage drift over the temperature in application information.
2. Typical value is based on the V drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law
IO
and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. See
Section 5.5 Long term input offset voltage drift.
3. Current is positive when it is sinked into the op-amp.
4.
I
is defined as |I – I
|
ibn
io
ibp
5. For higher capacitive values see Figure 26. Phase margin vs. output current at V = 36 V, Figure 27. Phase margin vs.
CC
capacitive load and Figure 28. Overshoot vs. capacitive load at V = 36 V
CC
6. Theoretical value of the input current noise density based on the measurement of the input transistor base current:
i
= 2. q.i
n
b
DS12487 - Rev 6
page 7/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Electrical characteristics
Table 7. Electrical characteristics at VCC = 5 V, VICM = VOUT = VCC / 2, Tamb = 25 °C and RL connected to
VCC / 2 (unless otherwise specified)
Symbol
Parameter
Conditions
DC performance
Min.
Typ.
Max.
Unit
TSB711A, TSB712A, T = 25 °C,
± 350
± 650
V
CC-
≤ V
≤ V
- 1.5 V
CC+
ICM
TSB711A,TSB712A, T = 25 °C,
≤ V ≤ V
V
CC-
ICM
CC+
TSB711A,TSB712A, -40 °C < T < 125 °C,
≤ V ≤ V - 1.5 V
± 750
V
CC-
ICM
CC+
TSB711A, TSB712A, -40 °C < T < 125 °C,
≤ V ≤ V
± 1050
± 800
V
CC-
ICM
CC+
V
Input offset voltage
µV
io
TSB711, TSB712, T = 25 °C,
≤ V ≤ V - 1.5 V
V
CC-
ICM
CC+
TSB711, TSB712, T = 25 °C,
≤ V ≤ V
± 1200
± 1100
± 1400
V
CC-
ICM
CC+
TSB711, TSB712, -40 °C < T < 125 °C,
≤ V ≤ V - 1.5 V
V
CC-
ICM
CC+
TSB711, TSB712, -40 °C < T < 125 °C,
≤ V ≤ V
V
CC-
ICM
CC+
-40°C < T < 125 °C (1)
ΔV / ΔT
Input offset voltage drift
Input bias current (2)
4
300
900
0
µV / °C
io
V
ICM
V
ICM
V
ICM
V
ICM
V
ICM
V
ICM
= V
= V
, T = 25 °C
CC+
0
-40 °C < T < 125 °C
0
CC+,
I
IB
= V , T = 25 °C
-100
-200
CC-
nA
= V
= V
= V
-40 °C < T < 125 °C
0
CC-,
CC+
CC-
10
10
Input offset current (3)
I
IO
R ≥ 10 kΩ,
L
105
100
120
(V ) + 0.5 V ≤ V
T = 25 °C
≤ (V
≤ (V
) - 0.5 V,
) - 0.5 V,
CC-
OUT
CC+
A
Open loop gain
dB
VD
R ≥ 10 kΩ,
L
(V ) + 0.5 V ≤ V
CC-
OUT
CC+
-40 °C < T < 125 °C
(V ) ≤ V
≤ ( V
) - 1.5 V,
- 1.5 V,
CC-
ICM
CC+
95
90
80
125
T = 25 °C
(V
≤ V
≤ (V
CC+)
CC-)
ICM
-40 °C < T < 125 °C
Common-mode rejection ratio
TSB711A, TSB712A (V ) ≤ V
≤ (V
≤ (V
),
),
CMR
dB
CC-
ICM
CC+
20 log ( ∆V
/ ∆V
)
IO
105
105
INCM
T = 25 °C
TSB711A, TSB712A (V ) ≤ V
CC-
ICM
CC+
75
75
-40 °C < T < 125 °C
TSB711, TSB712 (V ) ≤ V
≤ (V
CC+
),
CC-
ICM
DS12487 - Rev 6
page 8/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Electrical characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
T = 25 °C
Common-mode rejection ratio
CMR
TSB711, TSB712 (V ) ≤ V
≤ (V ),
CC+
dB
CC-
ICM
20 log ( ∆V
/ ∆V
)
70
INCM
IO
-40 °C < T < 125 °C
No load, -40 °C < T < 125 °C
= 2 mA, -40 °C < T < 125 °C
90
200
90
High level output voltage (drop
voltage from VCC+)
V
OH
I
SOURCE
mV
No load, -40 °C < T < 125 °C
V
Low level output voltage
OL
I
= 2 mA, -40 °C < T < 125 °C
200
SINK
V
V
V
V
= V , T = 25 °C
20
15
20
15
50
50
OUT
OUT
OUT
OUT
CC
I
I
SINK
= V , -40 °C < T < 125 °C
CC
I
mA
mA
OUT
= 0 V, T = 25 °C
SOURCE
= 0 V, -40 °C < T < 125 °C
No load, T = 25 °C
1.4
I
Supply current by op-amp
CC
No load, -40 °C < T < 125 °C
AC performance
2.3
R = 10 kΩ, C = 100 pF
GBP
SR
Gain bandwidth product
Slew rate
4.5
2
6
MHz
L
L
3 V step, R = 10 kΩ, C = 100 pF,
L
L
2.7
V / µs
A
V
= 1 V/V, 10% to 90%
V
= 1 Vrms , R = 10 kΩ, A = +1,
IN
L
V
0,00032
0,0004
f = 1 kHz, BW = 22 kHz
= 1 Vrms , R = 1 kΩ, A = +1,
THD+N Total harmonic distorsion + noise
%
V
IN
L
V
f = 1 kHz, BW = 22 kHz
Φm
Phase margin
At unity gain, 25 °C, 10 kΩ, 100 pF
34
ᵒ
100(4)
20
C
Capacitive load drive
pF
LOAD
f = 10 Hz
e
Input voltage noise density
f = 100 Hz
13
nV / √Hz
n
f = 10 kHz
12
e
n p-p
µV
Input noise voltage
0.1 Hz ≤ f ≤ 10 Hz
0.8
PP
0.15 (5)
i
Input current noise density
f = 1 kHz
pA / √Hz
n
1. See Section 5.4 Input offset voltage drift over the temperature in application information.
2. Current is positive when it is sinked into the op-amp.
3.
I is defined as |I – I |.
io ibp ibn
4. For higher capacitive values see Figure 25. Phase margin vs. output current at V = 5 V, Figure 27. Phase margin vs.
CC
capacitive load
5. Theoretical value of the input current noise density based on the measurement of the input transistor base current:
i
= 2. q.i
n
b
DS12487 - Rev 6
page 9/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
4
Typical performance characteristics
RL connected to VCC / 2 (unless otherwise specified).
Figure 5. Input offset voltage distribution at VCC = 5 V
TSB711A, TSB712A
Figure 4. Supply current vs. supply voltage
Figure 6. Input offset voltage distribution at VCC = 36 V
TSB711A, TSB712A
Figure 7. Input offset voltage vs. temperature at VCC = 5 V
DS12487 - Rev 6
page 10/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
Figure 8. Input offset voltage vs. temperature at
Figure 9. Input offset voltage thermal coefficient
distribution at VCC = 5 V
VCC = 36 V
Figure 10. Channel separation vs. frequency at VCC = 36 V
Figure 11. Input offset voltage vs. supply voltage
Figure 12. Input offset voltage vs. common mode voltage Figure 13. Input offset voltage vs. common mode voltage
at VCC = 5 V TSB711A, TSB712A at VCC = 36 V TSB711A, TSB712A
DS12487 - Rev 6
page 11/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
Figure 14. Input bias current vs. temperature at
VICM = VCC / 2
Figure 15. Output current vs. output voltage at
VCC = 5 V
Figure 16. Input bias current vs. common mode voltage at Figure 17. Input bias current vs. common mode voltage at
VCC = 5 V
VCC = 36 V
Figure 18. Output current vs. output voltage at VCC = 36 V
Figure 19. Output voltage (VOH) vs. supply voltage
DS12487 - Rev 6
page 12/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
Figure 20. Output voltage (VOL) vs. supply voltage
Figure 21. Positive slew rate at VCC = 36 V
Figure 22. Negative slew rate at VCC = 36 V
Figure 23. Bode diagram at VCC = 5 V
Figure 24. Bode diagram at VCC = 36 V
Figure 25. Phase margin vs. output current at VCC = 5 V
DS12487 - Rev 6
page 13/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
Figure 26. Phase margin vs. output current at VCC = 36 V
Figure 27. Phase margin vs. capacitive load
Figure 29. Small step response vs. time at VCC = 5 V
Figure 31. Desaturation time at high rail at VCC = 5 V
Figure 28. Overshoot vs. capacitive load at VCC = 36 V
Figure 30. Desaturation time at low rail at VCC = 5 V
DS12487 - Rev 6
page 14/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
Figure 33. Amplifier behavior close to the low rail at
Figure 32. Small step response vs. time at VCC = 36 V
VCC = 36 V
Figure 34. Amplifier behavior close to the high rail at
VCC = 36 V
Figure 35. Noise vs. frequency at VCC = 5 V
Figure 36. Noise vs. frequency at VCC = 36 V
Figure 37. Noise vs. time at VCC = 36 V
DS12487 - Rev 6
page 15/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical performance characteristics
Figure 39. THD+N vs. output voltage
Figure 38. THD+N vs. frequency
Figure 40. PSRR vs. frequency at VCC = 10 V
Figure 41. CMRR vs. frequency at VCC = 10 V
DS12487 - Rev 6
page 16/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Application information
5
Application information
5.1
Operating voltages
The TSB711, TSB711A, TSB712, TSB712A devices can operate from 2.7 to 36 V. The parameters are fully
specified at 5 V and 36 V power supplies. However, the parameters are very stable over the full VCC range and
several characterization curves show the TSB711, TSB711A, TSB712, TSB712A device characteristics over the
full operating range. Additionally, the main specifications are guaranteed in extended temperature range from -40
to 125 °C.
5.2
Input pin voltage range
The TSB711, TSB711A,TSB712 and TSB712A devices have an internal ESD diode protection on the inputs.
These diodes are connected between the inputs and each supply rail to protect the input stage from electrical
discharge, as shown in the figure below.
Figure 42. Input current limitation
Vcc+
100Ω
-
In
-
VCC +
VCC -
Out
D1
Out
D2
100Ω
+
In+
Vcc-
When the input pin voltage exceeds the power supply, the ESD diodes become conductive and, depending on
this voltage, excessive current can flow through them. Without limitation this overcurrent can damage the device.
In this case, the current has to be limited to 10 mA by adding a resistance in series with the input pin.
Similarly, in order to avoid excessive current in the protection diodes between the positive and negative inputs,
the differential voltage should be limited to ± 2 V, or the current limited to 10 mA. Such a high differential voltage
can be reached when the output is in saturation mode, or slew rate limited. In particular, it can happen when the
device is used in comparator mode.
The TSB711, TSB711A, TSB712, TSB712A do not show any phase reversal for any input common mode voltage
inside the absolute maximum ratings (AMR) voltage window, (VCC-) - 200 mV < VICM < (VCC+) + 200 mV.
DS12487 - Rev 6
page 17/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Rail-to-rail input stage
5.3
Rail-to-rail input stage
The TSB711, TSB711A, TSB712, TSB712A devices are built with two complementary NPN and PNP input
differential pairs, as shown in the figure below.
Figure 43. Rail-to-rail input stage
V
CC
Ip
VIP
VIN
P
P
p
n
[ … ]
[ … ]
[ … ]
[ … ]
Nn
Np
In
GND
The devices have rail-to-rail inputs, and the input common mode range is extended from VCC- to (VCC+) + 0.1
V. However, the performance of these devices is optimized for the P-channel differential pair (which means
from VCC- to (VCC+) - 1.5 V). Around (VCC+) – 1 V, and with slight variations depending on the process, a
transition occurs between the P-channel and the N-channel differential pair, impacting the input offset voltage (see
Figure 12. Input offset voltage vs. common mode voltage at VCC = 5 V TSB711A, TSB712A and Figure 13. Input
offset voltage vs. common mode voltage at VCC = 36 V TSB711A, TSB712A). As a consequence, CMRR can
be degraded around this transition region. In order to achieve the best possible performance, this operating point
should be avoided.
Please also notice that the input bias current polarity depends on the operation of NPN or PNP input stage.
This transition is visible in figures Figure 16. Input bias current vs. common mode voltage at VCC = 5 V and
Figure 17. Input bias current vs. common mode voltage at VCC = 36 V.
5.4
Input offset voltage drift over the temperature
The maximum input voltage drift variation over temperature is defined as the offset variation related to the offset
value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain,
and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C
can be compensated during the production at application level. The maximum input voltage drift overtemperature
enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift
overtemperature is computed using the following formula:
ΔV
io
ΔT
V
T − V 25°C
io
io
= max
(1)
T − 25°C
T = − 40 °C and T = 125 °C
The datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a Cpk
(process capability index) greater than 1.3.
DS12487 - Rev 6
page 18/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Long term input offset voltage drift
5.5
Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
•
•
Voltage acceleration, by changing the applied voltage.
Temperature acceleration, by changing the die temperature (below the maximum junction temperature
allowed by the technology) with the ambient temperature.
The voltage acceleration has been defined based on JEDEC results, and is defined using:
(2)
- V )
U
AFV = еβ.(V
S
Where:
AFV is the voltage acceleration factor
β is the voltage acceleration coefficient in 1/V, constant technology parameter (β = 1)
VS is the stress voltage used for the accelerated test
VU is the voltage used for the application
The temperature acceleration is driven by the Arrhenius model, and is defined as follows:
(3)
E
a
1
1
.
−
A
= e
.
k
T
T
FT
U
S
Where:
AFT is the temperature acceleration factor
Ea is the activation energy of the technology based on the failure rate
k is the Boltzmann constant (8.6173 x 10-5 eV.K-1)
TU is the temperature of the die when VU is used (K)
TS is the temperature of the die under temperature stress (K)
The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature
acceleration factor.
(4)
AF = AFT . AFV
AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can
then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress
duration.
(5)
Months = AF × 1000 h × 12 months / (24 h × 365.25 days)
To evaluate the op-amp reliability, a follower stress condition is used where VCC is defined as a function of the
maximum operating voltage and the absolute maximum ratings (as recommended by JEDEC rules). Vio drift (in
µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions.
(6)
VCC = max(VOP) with Vicm = VCC/2
The long term drift parameter ΔVio (in µV.month-1/2), estimating the reliability performance of the product, is
obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of
months.
(7)
V
drift
io
montℎs
∆ V
=
io
Where Vio drift is the measured drift value in the specified test conditions after 1000 h stress duration.
The Vio final drift, in µV, to be measured on the device in real operation conditions can be computed from:
(8)
E
. e
k
a
1
297
1
β . V − V
CC CC nom
.
−
V
t
, T , V
= ∆ V
. t . e
T
io final drift op op CC
io, 25°C
op
op
DS12487 - Rev 6
page 19/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
EMI rejection
Where:
ΔVio is the long term drift parameter in µV.month-1/2
top is the operating time seen by the device, in months
Top is the operating temperature
VCC is the power supply during operating time
VCC nom is the nominal VCC at which the ΔVio is computed (36 V for the TSB712A).
Ea is the activation energy of the technology (here 0.7 eV).
5.6
EMI rejection
The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of operational
amplifiers. An adverse effect that is common to many op-amps is a change in the offset voltage as a result of RF
signal rectification. EMIRR is defined as follows:
V
in pp
EMIRR = 20.log
(9)
ΔV
io
The TSB711, TSB711A, TSB712, TSB712A have been specially designed to minimize susceptibility to EMIRR
and shows a low sensitivity. As visible on figure below, EMI rejection ratio has been measured on both inputs and
outputs, from 400 MHz to 2.4 GHz.
Figure 44. EMIRR on In+, In- and out pins
EMIRR performance might be improved by adding small capacitances (in the pF range) on the inputs, power
supply and output pins. These capacitances help in minimizing the impedance of these nodes at high frequencies.
DS12487 - Rev 6
page 20/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Maximum power dissipation
5.7
Maximum power dissipation
The usable output load current drive is limited by the maximum power dissipation allowed by the device package.
The absolute maximum junction temperature for the TSB711, TSB711A, TSB712, TSB712A is 150 °C. The
junction temperature can be estimated as follows:
T
= P × R
tℎ − ja
+ T
A
(10)
J
D
TJ is the die junction temperature
PD is the power dissipated in the package
Rth-ja is the junction to ambient thermal resistance of the package
TA is the ambient temperature
The power dissipated in the package PD is the sum of the quiescent power dissipated and the power dissipated
by the output stage transistor. It is calculated as follows:
P
=
V
× I
CC
+
V
− V
× ILoad
(11)
D
CC
CC +
OUT
when the op-amp sources the current
P
=
V
× I
CC
+
V
− V
× ILoad
(12)
D
CC
OUT
CC−
when the op-amp is sinks the current.
Do not exceed the 150 °C maximum junction temperature for the device. Exceeding the junction temperature limit
can cause degradation in the parametric performance or even destroy the device.
5.8
Capacitive load and stability
Stability analysis must be performed for large capacitive loads over 100 pF. Increasing the load capacitance to
high values produces gain peaking in the frequency response, with overshoot and ringing in the step response.
Generally, unity gain configuration is the worst situation for stability and the ability to drive large capacitive loads.
For additional capacitive load drive capability in unity-gain configuration, stability can be improved by inserting
a small resistor RISO (10 Ω to 30 Ω) in series with the output. This resistor significantly reduces ringing while
maintaining DC performance for purely capacitive loads. However, if there is a resistive load in parallel with the
capacitive load, a voltage divider is created introducing a gain error on the output and slightly reducing the output
swing. The error introduced is proportional to the ratio RISO / RL. RISO modifies the maximum capacitive load
acceptable from a stability point-of-view as described in the following figure:
Figure 45. Stability criteria with a serial resistor at different capacitive loads
S
Unstable
DS12487 - Rev 6
page 21/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Capacitive load and stability
Figure 46. Test configuration for RISO
Please note that RISO = 30 Ω is sufficient to make the TSB711, TSB711A, TSB712, TSB712A stable whatever the
capacitive load.
DS12487 - Rev 6
page 22/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
PCB layout recommendations
5.9
PCB layout recommendations
Particular attention must be paid to the layout of the PCB tracks connected to the amplifier, load, and power
supply. The power and ground traces are critical as they must provide adequate energy and grounding for
all circuits. The best practice is to use short and wide PCB traces to minimize voltage drops and parasitic
inductance. In addition, to minimize parasitic impedance over the entire surface, a multi-via technique that
connects the bottom and top layer ground planes together in many locations is often used. The copper traces
connecting the output pins to the load and supply pins should be as wide as possible to minimize trace resistance.
5.10
Decoupling capacitor
In order to ensure op-amp full functionality, it is mandatory to place a decoupling capacitor of at least 22 nF
as close as possible to the op-amp supply pin. A good decoupling helps to reduce electromagnetic interference
impact.
DS12487 - Rev 6
page 23/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Typical applications
6
Typical applications
6.1
Low-side current sensing
Power management mechanisms are found in most electronic systems. Current sensing is useful to protect
applications. The low-side current sensing method consists of placing a sense resistor between the load and the
circuit ground. The resulting voltage drop is amplified using the TSB711A and the TSB712A (see the following
figure).
Figure 47. Low-side current sensing schematic
C1
Rg1
Rg2
Rf1
I
5 V
+
I
I
n
p
-
+
R
shunt
V
out
-
TSB711A
TSB712A
Rf2
Vout can be expressed as follows:
R
R
R
R
.R
R
R
g2
f1
g1
g2 f2
f1
V
= R
.I 1 −
. 1 −
+ I .
. 1 +
− I .R
n f1
(13)
(14)
OUT
sℎunt
p
R
+ R
R
+ R
g2
f2
g2
f2
g1
R
f1
− V . 1 −
io
R
g1
Assuming that Rf2 = Rf1 = Rf and Rg2 = Rg1 = Rg, can be simplified in the following manner:
R
R
R
R
f
f
V
= R
sℎunt
.I .
− V . 1 +
io
+ R .I
f io
OUT
g
g
The main advantage of using the TSB711A and the TSB712A for a low-side current sensing relies on its low
Vio, compared to general purpose operational amplifiers. For the same current and targeted accuracy, the shunt
resistor can be chosen with a lower value, resulting in lower power dissipation, lower drop in the ground path, and
lower cost. Particular attention must be paid to the matching and precision of Rg1, Rg2, Rf1, and Rf2, to maximize
the accuracy of the measurement.
DS12487 - Rev 6
page 24/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Package information
7
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
7.1
SOT23-5 package information
Figure 48. SOT23-5 package outline
Table 8. SOT23-5 package mechanical data
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
Max.
1.45
0.15
1.30
0.50
0.20
3.00
Min.
Max.
0.057
0.006
0.051
0.020
0.020
0.118
A
A1
A2
B
0.90
1.20
0.035
0.047
0.90
0.35
0.09
2.80
1.05
0.40
0.15
2.90
1.90
0.95
2.80
1.60
0.35
0.035
0.014
0.004
0.110
0.041
0.016
0.006
0.114
0.075
0.037
0.110
0.063
0.014
C
D
D1
e
E
2.60
1.50
0.10
0°
3.00
1.75
0.60
10°
0.102
0.059
0.004
0°
0.118
0.069
0.024
10°
F
L
K
DS12487 - Rev 6
page 25/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
MiniSO8 package information
7.2
MiniSO8 package information
Figure 49. MiniSO8 package outline
Table 9. MiniSO8 mechanical data
Inches
Dim.
Millimeters
Min.
Typ.
Max.
1.1
Min.
Typ.
Max.
0.043
0.006
0.037
0.016
0.009
0.126
0.203
0.122
A
A1
A2
b
0
0.15
0.95
0.4
0
0.75
0.22
0.08
2.8
0.85
0.03
0.009
0.003
0.11
0.033
c
0.23
3.2
D
3
0.118
0.193
0.118
0.026
0.024
0.037
0.01
E
4.65
2.8
4.9
3
5.15
3.1
0.183
0.11
E1
e
0.65
0.6
0.95
0.25
L
0.4
0°
0.8
0.016
0°
0.031
L1
L2
k
8°
8°
ccc
0.1
0.004
DS12487 - Rev 6
page 26/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
SO8 package information
7.3
SO8 package information
Figure 50. SO8 package outline
Table 10. SO-8 mechanical data
Inches
mm
Dim.
Min.
Typ.
Max.
1.75
0.25
Min.
Typ.
Max.
0.069
0.01
A
A1
A2
b
0.1
1.25
0.28
0.17
4.8
0.004
0.049
0.011
0.007
0.189
0.228
0.15
0.48
0.23
5
0.019
0.01
c
D
4.9
6
0.193
0.236
0.154
0.05
0.197
0.244
0.157
E
5.8
6.2
4
E1
e
3.8
3.9
1.27
h
0.25
0.4
0.5
0.01
0.02
0.05
L
1.27
0.016
L1
k
1.04
0.04
0
8 °
1 °
8 °
ccc
0.1
0.004
DS12487 - Rev 6
page 27/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
SO14 package information
7.4
SO14 package information
Figure 51. SO14 package outline
Table 11. SO14 mechanical data
Dimensions (1)
Millimeters
Inches
Typ.
Symbol
Min.
1.35
0.10
1.10
0.33
0.19
8.55
3.80
Typ.
Max.
1.75
0.25
1.65
0.51
0.25
8.75
4.0
Min.
0.05
0.004
0.04
0.01
0.007
0.33
0.15
Max.
0.068
0.009
0.06
A
A1
A2
B
0.02
C
0.009
0.34
D (2)
E
0.15
e
1.27
0.05
H
5.80
0.40
0°
6.20
1.27
8°
0.22
0.015
0°
0.24
0.05
8°
L
k
ddd
0.10
0.004
1. Drawing dimensions include “Single” and “Matrix” versions.
2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed
0.15 mm per side.
DS12487 - Rev 6
page 28/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
TSSOP14 package information
7.5
TSSOP14 package information
Figure 52. TSSOP14 package outline
D
E1
A1 A2
A
c
b
aaa
14
C
8
SEATING
PLANE
0.25 mm
GAGE PLANE
C
E
k
PIN 1 IDENTIFICATION
L
1
7
e
L1
Table 12. TSSOP14 mechanical data
Dimensions
Millimeters
Symbol
Inches
Typ.
Min.
Typ.
Max.
1.20
0.15
1.05
0.30
0.20
5.10
6.60
4.50
Min.
Max.
0.047
0.006
0.041
0.012
0.0089
0.201
0.260
0.176
A
A1
A2
b
0.05
0.80
0.19
0.09
4.90
6.20
4.30
0.002
0.031
0.007
0.004
0.193
0.244
0.169
0.004
0.039
1.00
c
D
5.00
6.40
4.40
0.65
0.60
1.00
0.197
0.252
0.173
0.0256
0.024
0.039
E
E1
e
L
0.45
0°
0.75
0.018
0°
0.030
L1
k
8°
8°
aaa
0.10
0.004
DS12487 - Rev 6
page 29/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Ordering information
8
Ordering information
Table 13. Order code
Order code
TSB711AILT
TSB711ILT
Temperature range
Package
SOT23-5
SOT23-5
SOT23-5
SOT23-5
MiniSO8
SO8
Packing
Marking
K223
-40° to +125 °C
K219
TSB711AIYLT
TSB711IYLT
TSB712AIST
TSB712AIDT
TSB712IDT
K225
-40 °C to +125 °C automotive grade
K221
K214
TSB712AI
TSB712I
712S
-40° to +125 °C
SO8
TSB712IST
MiniSO8
SO8
TSB712AIYDT
TSB712AIYST
TSB712IYDT
TSB712IYST
TSB714AIDT
TSB714IDT
712AIY
712Y
MiniSO8
SO8
-40 to 125 °C automotive grade (1)
Tape and reel
712IY
MiniSO8
K215
B714AI
B714I
-40° to +125 °C
-40 to 125 °C automotive grade (1)
-40° to +125 °C
SO14
TSB714AIYDT
TSB714IYDT
TSB714AIPT
TSB714IPT
B714AY
B714Y
B714AI
B714I
TSSOP14
TSB714AIYPT
TSB714IYPT
B714AY
B714IY
-40 to 125 °C automotive grade (1)
1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001
and Q002 or equivalent.
SO8 package for single op-amp may be available for qualification under customer request. Please contact sales
office for such request.
DFN8 package for dual op-amp may be available for qualification under customer request. Please contact sales
office for such request.
DS12487 - Rev 6
page 30/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Revision history
Table 14. Document revision history
Date
Revision
Changes
23-Apr-2018
1
Initial release.
Added the TSB712 as root part number; cover page has been updated accordingly.
Updated Section 3 Electrical characteristics, Section 4 Typical performance
characteristics, Section 5 Application information and Table 7. Order code.
17-Sep-2018
2
3
Added Section 7.2 SO8 package information.
Updated Table 3. Electrical characteristics at VCC = 36 V, VICM = VOUT = VCC / 2,
Tamb = 25 °C and RL connected to VCC / 2 (unless otherwise specified) and Table 4.
Electrical characteristics at VCC = 5 V, VICM = VOUT = VCC / 2, Tamb = 25 °C and RL
connected to VCC / 2 (unless otherwise specified).
29-Nov-2018
18-Feb-2019
11-Jun-2019
4
5
Updated Figure 44. Stability criteria with a serial resistor at different capacitive loads.
Added the root part numbers TSB711 and TSB711A, therefore the whole document has
been updated accordingly.
Added new part numbers in Table 13. Order code, new Section 7.4 SO14 package
information and Section 7.5 TSSOP14 package information.
28-Oct-2020
6
DS12487 - Rev 6
page 31/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Contents
Contents
1
2
3
4
5
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Application information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Operating voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Input pin voltage range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Rail-to-rail input stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Input offset voltage drift over the temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Long term input offset voltage drift . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
EMI rejection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Maximum power dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Capacitive load and stability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
PCB layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
5.10 Decoupling capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
6
7
Typical applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
6.1
Low-side current sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
7.1
7.2
7.3
7.4
7.5
SOT23-5 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
MiniSO8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
SO8 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
SO14 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
TSSOP14 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
8
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
DS12487 - Rev 6
page 32/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
TSB711 pin description (SOT23-5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
TSB712 pin description (miniSO8/SO8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
TSB714 pin description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics at VCC = 36 V, VICM = VOUT = VCC / 2, Tamb = 25 °C and RL connected to VCC / 2 (unless
otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics at VCC = 5 V, VICM = VOUT = VCC / 2, Tamb = 25 °C and RL connected to VCC / 2 (unless
otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SOT23-5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
MiniSO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 7.
Table 8.
Table 9.
Table 10. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 11. SO14 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 12. TSSOP14 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 13. Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 14. Document revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DS12487 - Rev 6
page 33/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
TSB711 pin connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
TSB712 pin connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
TSB714 pin connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Supply current vs. supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input offset voltage distribution at VCC = 5 V TSB711A, TSB712A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input offset voltage distribution at VCC = 36 V TSB711A, TSB712A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input offset voltage vs. temperature at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input offset voltage vs. temperature at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Input offset voltage thermal coefficient distribution at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Channel separation vs. frequency at VCC = 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Input offset voltage vs. supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Input offset voltage vs. common mode voltage at VCC = 5 V TSB711A, TSB712A . . . . . . . . . . . . . . . . . . . . . 11
Input offset voltage vs. common mode voltage at VCC = 36 V TSB711A, TSB712A . . . . . . . . . . . . . . . . . . . . 11
Input bias current vs. temperature at VICM = VCC / 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
Figure 43.
Figure 44.
Figure 45.
Figure 46.
Figure 47.
Figure 48.
Output current vs. output voltage at
VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Input bias current vs. common mode voltage at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Input bias current vs. common mode voltage at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output current vs. output voltage at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output voltage (VOH) vs. supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output voltage (VOL) vs. supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Positive slew rate at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Negative slew rate at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Bode diagram at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Bode diagram at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Phase margin vs. output current at VCC = 5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Phase margin vs. output current at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Phase margin vs. capacitive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Overshoot vs. capacitive load at VCC = 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Small step response vs. time at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Desaturation time at low rail at VCC = 5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Desaturation time at high rail at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Small step response vs. time at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Amplifier behavior close to the low rail at VCC = 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Amplifier behavior close to the high rail at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Noise vs. frequency at VCC = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Noise vs. frequency at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Noise vs. time at VCC = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
THD+N vs. frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
THD+N vs. output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PSRR vs. frequency at VCC = 10 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
CMRR vs. frequency at VCC = 10 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Rail-to-rail input stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
EMIRR on In+, In- and out pins. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Stability criteria with a serial resistor at different capacitive loads. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Test configuration for RISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Low-side current sensing schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SOT23-5 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
DS12487 - Rev 6
page 34/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
List of figures
Figure 49.
Figure 50.
Figure 51.
Figure 52.
MiniSO8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO8 package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SO14 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
TSSOP14 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DS12487 - Rev 6
page 35/36
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
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DS12487 - Rev 6
page 36/36
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