TXN612RG [STMICROELECTRONICS]

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型号：	TXN612RG
厂家：	ST
描述：	暂无描述栅极触发装置可控硅整流器局域网
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TXN/TYN 0512 --->

TXN/TYN 1012

SCR

FEATURES

HIGH SURGE CAPABILITY

HIGH ON-STATE CURRENT

HIGH STABILITY AND RELIABILITY

TXN Serie :

INSULATED VOLTAGE = 2500V

(UL RECOGNIZED : E81734)

(RMS)

DESCRIPTION

The TYN/TXN 0512 ---> TYN/TXN 1012 Family

of Silicon Controlled Rectifiers uses a high per-

formance glass passivated technology.

This general purpose Family of Silicon Controlled

Rectifiers is designed for power supplies up to

400Hz on resistive or inductive load.

TO220AB

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(180° conduction angle)

TXN

TYN

Tc=80°C

Tc=90°C

T(RMS)

Average on-state current

(180° conduction angle,single phase circuit)

TXN

TYN

Tc=80°C

Tc=90°C

T(AV)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

tp=8.3 ms

tp=10 ms

125

120

TSM

I t

A s

I t value

dI/dt

Critical rate of rise of on-state current

100

A/µs

Gate supply : I = 100 mA di /dt = 1 A/µs

Tstg

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260

°C

Symbol

Parameter

TYN/TXN

Unit

0512

112

212

412

612

600

812

1012

1000

Repetitive peak off-state voltage

Tj = 125 °C

100

200

400

800

DRM

RRM

1/5

April 1995

TXN/TYN 0512 ---> TXN/TYN 1012

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

Rth (j-a)

Junction to ambient

Rth (j-c) DC Junction to case for DC

TXN

TYN

3.5

2.5

GATE CHARACTERISTICS (maximum values)

= 1W

= 10W (tp = 20 µs)

= 4A (tp = 20 µs)

RGM

= 5 V.

G (AV)

FGM

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

V =12V (DC) R =33Ω

Value

Unit

Tj=25°C

Tj= 125°C

Tj=25°C

MAX

V =12V (DC) R =33Ω

MAX

MIN

TYP

1.5

0.2

V =V

R =3.3kΩ

DRM

tgt

V =V

= 40mA

µs

dI /dt = 0.5A/µs

I = 1.2 I

Tj=25°C

Tj= 125°C

TYP

MAX

I = 100mA gate open

ITM= 24A tp= 380µs

1.6

0.01

Rated

DRM

RRM

DRM

RRM

dV/dt

Linear slope up to V =67%V

gate open

MIN

TYP

200

V/µs

µs

DRM

V =67%V

dI /dt=30 A/µs

= 24A V = 25V

Tj= 125°C

DRM

dV /dt= 50V/µs

2/5

TXN/TYN 0512 ---> TXN/TYN 1012

Fig.1 : Maximum average power dissipation versus

Fig.2 : Correlation between maximum average power

average on-state current (TXN).

dissipation and maximum allowable temperatures (T

amb

for different thermal resistances heatsink +

contact (TXN).

and T

)

case

Fig.3 : Maximum average power dissipation versus

average on-state current (TYN).

Fig.4 : Correlation between maximum average power

dissipation and maximum allowable temperatures (T

amb

for different thermal resistances heatsink +

contact (TYN).

and T

)

case

Fig.5

Average on-state current versus case

Fig.6

Average on-state current versus case

temperature (TXN).

temperature (TYN).

3/5

TXN/TYN 0512 ---> TXN/TYN 1012

Fig.7 : Relative variation of thermal impedance versus

Fig.8 : Relative variation of gate trigger current versus

pulse duration.

junction temperature.

Zth/Rth

Zth(j-c)

0.1

Zth(j-a)

tp(s)

1E+2 5E+2

0.01

1E-3

1E-2

1E-1

1E+0

1E+1

Fig.9 : Non repetitive surge peak on-state current

Fig.10 : Non repetitive surge peak on-state current for

versus number of cycles.

a sinusoidal pulse with width : t ≤ 10 ms, and

corresponding value of I t.

Fig.11 : On-state characteristics (maximum values).

4/5

TXN/TYN 0512 ---> TXN/TYN 1012

PACKAGE MECHANICAL DATA

TO220AB Plastic

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

10.00 10.40 0.393 0.409

15.20 15.90 0.598 0.625

13.00 14.00 0.511 0.551

6.20

3.50

2.65

4.40

3.75

1.23

0.49

2.40

4.80

1.14

0.61

6.60 0.244 0.259

4.20 0.137 0.165

2.95 0.104 0.116

4.60 0.173 0.181

3.85 0.147 0.151

1.32 0.048 0.051

0.70 0.019 0.027

2.72 0.094 0.107

5.40 0.188 0.212

1.70 0.044 0.066

0.88 0.024 0.034

= N =

Cooling method : by conduction (method C)

Marking : type number

Weight : 2.3 g

Recommended torque value : 0.8 m.N.

Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability

for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.

Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems

without express written approval of SGS-THOMSON Microelectronics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-

lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

5/5

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