VN02AN [STMICROELECTRONICS]
HIGH SIDE SMART POWER SOLID STATE RELAY; 高侧智能功率固态继电器
| 型号： | VN02AN |
| 厂家： | 
ST |
| 描述： | HIGH SIDE SMART POWER SOLID STATE RELAY |
| 文件： | 总11页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN02AN
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VDSS
RDS(on
)
IOUT
VCC
VN02AN
60 V
0.35 Ω
7 A
36 V
■
OUTPUT CURRENT (CONTINUOUS):
7A @ Tc=25oC
■
■
■
■
■
LOGIC LEVEL 5V COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
FAST DEMAGNETIZATION OF INDUCTIVE
LOAD
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
DESCRIPTION
The VN02AN is a monolithic device made using
STMicroelectronics
PENTAWATT
(in-line)
VIPower
Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
ORDER CODES:
PENTAWATT vertical
PENTAWATT horizontal VN02AN(011Y)
VN02AN
The diagnostic output indicates an over
temperature status.
PENTAWATT in-line VN02AN(012Y)
Fast turn-off of inductive load is achieved by
negative (-18 V) load voltage at turn-off.
BLOCK DIAGRAM
1/11
July 1998
VN02AN
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
V
V(BR)DSS Drain-Source Breakdown Voltage
60
IOUT
IR
Output Current (cont.)
Reverse Output Current
Input Current
7
-7
A
A
IIN
±10
mA
V
-VCC
ISTAT
VESD
Ptot
Tj
Reverse Supply Voltage
Status Current (sink)
-4
±10
mA
V
Electrostatic Discharge (1.5 kΩ, 100 pF)
2000
31
o
Power Dissipation at Tc ≤ 25 C
W
Junction Operating Temperature
Storage Temperature
-40 to 150
-55 to 150
oC
oC
Tstg
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
2/11
VN02AN
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
4
60
oC/W
oC/W
Max
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase = 25 oC unless otherwise specified)
POWER
Symbol
Parameter
Supply Voltage
Test Conditions
-40 oC < Tj < 125 oC
Min.
Typ.
Max.
Unit
VCC
Ron
*
7
36
V
On State Resistance
IOUT = 3 A
0.35
0.6
Ω
Ω
IOUT = 1 A VCC = 30 V Tj = 125 oC
IS
Supply Current
Off State VCC = 30 V
1
9
7
mA
mA
mA
On State VCC = 30 V
On State VCC = 30 V Tj = 125 oC
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time Of IOUT = 3 A Resistive Load
15
µs
Output Current
Input Rise Time < 0.1 µs
Rise Time Of Output
Current
IOUT = 3 A Resistive Load
Input Rise Time < 0.1 µs
15
14
µs
µs
µs
Turn-off Delay Time Of IOUT = 3 A Resistive Load
Output Current
Input Rise Time < 0.1 µs
Fall Time Of Output
Current
IOUT = 3 A Resistive Load
Input Rise Time < 0.1 µs
4.5
o
(di/dt)on Turn-on Current Slope IOUT = 3 A
IOUT = IOV
25 C < Tj < 125 oC
0.5
1
A/µs
A/µs
25 oC < Tj < 125 C
o
o
(di/dt)off Turn-off Current Slope IOUT = 3 A
IOUT = IOV
25 C < Tj < 125 oC
1.5
4
A/µs
A/µs
25 oC < Tj < 125 C
o
o
VDEMAG Inductive Load Clamp
Voltage
IOUT = 3 A
-40 oC < Tj < 125 C
-24
-18
-14
V
LOGIC INPUT (-40 oC ≤ Tj ≤ 125 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VIL
Input Low Level
Voltage
0.8
V
VIH
Input High Level
Voltage
2
(*)
V
V
VI(hyst.) Input Hysteresis
Voltage
0.5
IIN
Input Current
VIN = 5 V
VIN = 2 V
VIN = 0.8 V
250
600
300
µA
µA
µA
25
VICL
Input Clamp Voltage
IIN = 10 mA
IIN = -10 mA
5.5
6
-0.7
V
V
-0.3
3/11
VN02AN
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (-40 oC ≤ Tj ≤ 125 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSTAT
Status Voltage Output ISTAT = 1.6 mA
Low
0.4
V
ISTAT
VUSD
Status Leakage Current VSTAT = 5 V
10
7
µA
Under Voltage Shut
Down
3.5
5.5
6
V
VSCL
Status Clamp Voltage
ISTAT = 10 mA
ISTAT = -10 mA
6
-0.7
V
V
-0.3
IOV
Iav
Over Current
RLOAD < 10 mΩ
RLOAD < 10 mΩ
15
A
A
o
Average Current In
Short Circuit
Tc = 85 C
0.6
IDOFF
TTSD
Leakage Current
VCC = 30 V
1
mA
oC
Thermal Shut-down
Temperature
140
125
TR
Reset Temperature
oC
(*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
TRUTH TABLE
INPUT
DIAGNOSTIC
OUTPUT
Normal Operation
L
H
H
H
L
H
Over-temperature
Under-voltage
H
X
L
L
L
H
Figure 1: Waveforms
4/11
VN02AN
FUNCTIONAL DESCRIPTION
where f = Switching Frequency
The device has a diagnostic output which
indicates over temperatureconditions.
Based on this formula it is possible to know the
value of inductance and/or current to avoid a
thermal shut-down.
The truth table shows input, diagnostic output
status and output voltage level in normal
operation and fault conditions. The output signals
are processed by internal logic.
PROTECTING THE DEVICE AGAINST RE-
VERSE BATTERY
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
across this diode are as follows:
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to 125 oC the switch is
automatically turned on again. To ensure the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28V according to:
If the input is pulled to power GND, a negative
voltage of -V is seen by the device. (Vil, Vih
f
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltageshut-down level is increased by
Vf.
V
ds = VCC - IOV * (R + Rw + Rl)
i
where:
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
Ri = internal resistence of Power Supply
Rw = Wires resistance
Rl = Short Circuit resistance
Driving inductive loads, an internal function of the
device ensures the fast demagnetization with
typical voltage (Vdemag) of -18V.
This function allows the reduction of the power
dissipation according to the formula:
P
dem = 0.5 * Lload * (Iload)2 * [(VCC + Vdem)/Vdem] * f
Figure 2: Over Current Test Circuit
5/11
VN02AN
Figure 3: Typical ApplicationCircuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical ApplicationCircuit With Separate Signal Ground
6/11
VN02AN
RDS(on) vs JunctionTemperature
RDS(on) vs Supply Voltage
RDS(on) vs Output Current
Input Voltages vs Junction Temperature
Output Current Derating
7/11
VN02AN
PENTAWATT (VERTICAL) MECHANICAL DATA
mm
TYP.
inch
TYP.
DIM.
MIN.
MAX.
4.8
MIN.
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
A
C
1.37
2.8
1.35
0.55
1.05
1.4
D
D1
E
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
F
F1
G
3.2
6.6
3.4
6.8
3.6
0.134
0.268
G1
H2
H3
L
7
10.4
10.4
10.05
0.396
17.85
15.75
21.4
0.703
0.620
0.843
0.886
L1
L2
L3
L5
L6
L7
M
22.5
2.6
15.1
6
3
0.102
0.594
0.236
0.118
0.622
0.260
15.8
6.6
4.5
4
0.177
0.157
M1
Dia
3.65
3.85
0.144
0.152
P010E
8/11
VN02AN
PENTAWATT (HORIZONTAL) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.8
MIN.
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.590
0244
A
C
1.37
2.8
D
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
D1
E
1.35
0.55
1.05
1.4
F
F1
G
3.2
6.6
3.4
6.8
3.6
0.134
0.268
G1
H2
H3
L
7
10.4
10.4
15
10.05
14.2
5.7
0.396
0.559
L1
L2
L3
L5
L6
L7
Dia
6.2
14.6
3.5
15.2
4.1
0.598
0.161
0.118
0.622
0.260
0.152
0.137
0.102
0.594
0.236
0.144
2.6
3
15.1
6
15.8
6.6
3.65
3.85
P010F
9/11
VN02AN
PENTAWATT (IN-LINE) MECHANICAL DATA
mm
TYP
inch
DIM.
MIN
MAX
4.8
MIN
TYP
MAX
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.937
1.028
0.118
0.622
0.260
0.152
A
C
1.37
2.8
D
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
D1
E
1.35
0.55
1.05
1.4
F
F1
G
3.2
6.6
3.4
6.8
3.6
0.134
0.268
G1
H2
H3
L2
L3
L5
L6
L7
Diam.
7
10.4
10.4
23.8
26.1
3
10.05
23.05
25.3
2.6
0.396
0.907
0.996
0.102
0.594
0.236
0.144
23.4
0.921
1.010
25.65
15.1
6
15.8
6.6
3.65
3.85
P010D
10/11
VN02AN
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical componentsin life support devices or systems without express written approval of STMicroelectronics.
The ST logo isa trademarkof STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronicsGROUP OF COMPANIES
Australia - Brazil - Canada- China - France- Germany- Italy - Japan - Korea- Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland- Taiwan - Thailand - United Kingdom- U.S.A.
.
11/11
相关型号：
©2020 ICPDF网 联系我们和版权申明