VN06-E [STMICROELECTRONICS]

ISO high side smart power solid state relay; ISO高侧智能功率固态继电器
VN06-E
型号: VN06-E
厂家: ST    ST
描述:

ISO high side smart power solid state relay
ISO高侧智能功率固态继电器

外围驱动器 驱动程序和接口 继电器 固态继电器
文件: 总17页 (文件大小:297K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VN06  
ISO high side smart power solid state relay  
Features  
(1)  
Type  
VDSS  
60 V  
RDS(on)  
In  
1.9 A  
VCC  
VN06  
0.18 Ω  
26 V  
1. In= nominal current according to ISO definition for high  
side automotive switch.  
PENTAWATT  
Description  
(a)  
Maximum continuous output current : 9A @  
Tc= 85°C  
5V logic level compatible input  
Thermal shutdown  
The VN06 is a monolithic device made using  
STMicroelectronics Vertical Intelligent Power  
technology, intended for driving resistive or  
inductive loads with one side grounded. Built-in  
thermal shutdown protects the chip from over  
temperature and short circuit. The open Drain  
diagnostic output indicates: open load in off state  
Under voltage protection  
Open drain diagnostic output  
Inductive load fast demagnetization  
Very low standby power dissipation  
and in on state, output shorted to V and  
CC  
overtemperature. Fast demagnetization of  
inductive loads is archieved by negative (-18V)  
load voltage at turn-off.  
a. The maximum continuous output current is the current at  
Tc = 85 °C for a battery voltage of 13V which does not activate  
self protection.  
Table 1.  
Device summary  
Package  
Order codes  
PENTAWATT  
VN06  
November 2008  
Rev 2  
1/17  
www.st.com  
17  
 
Contents  
VN06  
Contents  
1
2
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
2.1  
2.2  
2.3  
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
3.1  
3.2  
3.3  
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Protecting the device agaist load dump - test pulse 5 . . . . . . . . . . . . . . . 13  
Protecting the device against reverse battery . . . . . . . . . . . . . . . . . . . . . 13  
4
5
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
4.1  
4.2  
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
PENTAWATT mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
2/17  
VN06  
List of tables  
List of tables  
Table 1.  
Table 2.  
Table 3.  
Table 4.  
Table 5.  
Table 6.  
Table 7.  
Table 8.  
Table 9.  
Table 10.  
Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Switching (V =13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
CC  
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
PENTAWATT mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
3/17  
List of figures  
VN06  
List of figures  
Figure 1.  
Figure 2.  
Figure 3.  
Figure 4.  
Figure 5.  
Figure 6.  
Figure 7.  
Figure 8.  
Figure 9.  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
I
t
test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
OL(off)  
, t ISO definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
povl pol  
Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Over current test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Typical application circuit with a schottky diode for reverse supply protection . . . . . . . . . . 12  
Figure 10. Typical application circuit with separate signal ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Figure 11. PENTAWATT package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
4/17  
VN06  
Block diagram and pin description  
1
Block diagram and pin description  
Figure 1.  
Block diagram  
Figure 2.  
Configuration diagram (top view)  
PENTAWATT  
5/17  
Electrical specifications  
VN06  
2
Electrical specifications  
Figure 3.  
Current and voltage conventions  
ICC  
IIN  
V
CC  
INPUT  
ISTAT  
IOUT  
VCC  
STATUS  
OUTPUT  
GND  
VIN  
VOUT  
VSTAT  
IGND  
2.1  
Absolute maximum ratings  
Stressing the device above the rating listed in the “Absolute maximum ratings” table may  
cause permanent damage to the device. These are stress ratings only and operation of the  
device at these or any other conditions above those indicated in the operating sections of  
this specification is not implied. Exposure to Absolute maximum rating conditions for  
extended periods may affect device reliability. Refer also to the STMicroelectronics sure  
program and other relevant quality document.  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
V(BR)DSS Drain-Source breakdown voltage  
60  
V
A
IOUT  
IR  
Output current (cont.) at Tc = 85°C  
Reverse output current at Tc = 85°C  
Input current  
9
-9  
10  
A
IIN  
mA  
V
-VCC  
ISTAT  
VESD  
Ptot  
Tj  
Reverse supply voltage  
-4  
Status current  
10  
mA  
V
Electrostatic discharge (1.5 k, 100 pF)  
Power dissipation at Tc = 85°C  
Junction operating temperature  
Storage temperature  
2000  
27  
W
°C  
°C  
-40 to 150  
-55 to 150  
Tstg  
6/17  
VN06  
Electrical specifications  
2.2  
Thermal data  
Table 3.  
Symbol  
Thermal data  
Parameter  
Max. value  
Unit  
Rthj-case Thermal resistance junction-case  
Rthj-amb Thermal resistance junction-ambient  
2.4  
60  
°C/W  
°C/W  
2.3  
Electrical characteristics  
Values specified in this section are for V = 13V; -40°C<Tj<125°C, unless otherwise stated.  
CC  
Table 4.  
Symbol  
Power  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
VCC  
In(1)  
Supply voltage  
Nominal current  
5.5  
1.9  
13  
26  
V
A
Tc = 85°C; VDS(on) < 0.5  
I
OUT = 1.9 A  
0.36  
Ron  
IS  
On state resistance  
Supply current  
IOUT = 1.9 A Tj = 25°C  
0.18  
Off state Tj 25 °C  
On state  
50  
15  
µA  
mA  
VDS(max) Maximum voltage drop  
IOUT= 8.5A; Tc = 85°C  
2.75  
V
1. The nominal current is the current at Tc = 85°C for battery voltage of 13V which produces a voltage drop of 0.5V.  
Table 5.  
Symbol  
Switching (V =13V)  
CC  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
IOUT = 1.9 A resistive load  
Input rise time < 0.1 µs  
Turn-on delay time of  
output current  
td(on)  
20  
20  
25  
µs  
µs  
µs  
IOUT = 1.9 A resistive load  
Input rise time < 0.1 µs  
Rise time of output  
current  
tr  
IOUT = 1.9 A resistive load  
Input rise time < 0.1 µs  
Turn-off delay time of  
output current  
td(off)  
IOUT = 1.9 A resistive load  
Input rise time < 0.1 µs  
Fall time of output  
current  
tf  
6
µs  
I
OUT = 1.9 A  
0.08  
0.5 A/µs  
dVOUT/dt(on) Turn-on current slope  
dVOUT/dt(off) Turn-off current slope  
IOUT = IOV  
1
A/µs  
IOUT = 1.9 A  
IOUT = IOV  
0.2  
-18  
3
3
A/µs  
A/µs  
Inductive load clamp  
Vdemag  
voltage  
IOUT = 1.9 A; L= 1mH  
-24  
-14  
V
7/17  
Electrical specifications  
VN06  
Table 6.  
Symbol  
Logic inputs  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
VIL  
Input low level voltage  
Input high level voltage  
Input hysteresis voltage  
0.8  
V
V
V
(1)  
VIH  
2
VI(hyst.)  
0.5  
V
IN = 5 V  
250  
500  
250  
µA  
µA  
µA  
IIN  
Input current  
VIN = 2 V  
VIN = 0.8 V  
25  
I
IN = 10 mA  
5.5  
6
V
V
VICL  
Input clamp voltage  
IIN = -10 mA  
-0.7 -0.3  
1. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor  
calculated to not exceed 10 mA at the input pin.  
Table 7.  
Symbol  
Protections and diagnostics  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
VSTAT  
VUSD  
Status voltage output low  
Under voltage shutdown  
ISTAT = 1.6 mA  
0.4  
V
V
5
ISTAT = 10 mA  
ISTAT = -10 mA  
6
V
V
VSCL  
Status clamp voltage  
Over current  
-0.7  
RLOAD < 10 mΩ  
-40 Tc 125 °C  
IOV  
60  
A
A
RLOAD < 10 m;  
IAV  
Average current in short circuit  
1.4  
80  
Tc= 85 °C  
IOL  
TTSD  
TR  
Open load current level  
Thermal shutdown temperature  
Reset temperature  
5
140  
125  
2.5  
1
180 mA  
°C  
°C  
(1)  
VOL  
Open load voltage level  
Open load filtering time  
Open load filtering time  
Open load filtering time  
Status delay  
Off state (see Figure 4.)  
3.75  
5
5
V
(2)  
t1(on)  
10  
10  
10  
10  
ms  
ms  
ms  
µs  
(3)  
t1(off)  
1
5
(4)  
t2(off)  
1
5
(5)  
tpovl  
(see Figure 5.)  
(see Figure 5.)  
5
(5)  
tpol  
Status delay  
50  
700  
µs  
1. IOL(off) = (VCC -VOL)/ROL  
.
2. t1(on): minimum open load duration which acctivates the status output  
3. t1(off): minimum load recovery time which desactivates the status output  
4. t2(off): minimum on time after thermal shut down which desactivates status output  
5. tpovl tpol: ISO definition (see figure)  
8/17  
VN06  
Electrical specifications  
Figure 4.  
I
test circuit  
OL(off)  
Figure 5.  
t
, t ISO definition  
povl pol  
9/17  
Electrical specifications  
Figure 6.  
VN06  
Switching time waveforms  
X
Table 8.  
Truth table  
Conditions  
Input  
Output  
Diagnostic  
L
L
H
H
Normal operation  
H
H
Open circuit (no load)  
Over-temperature  
Under-voltage  
H
H
X
L
H
L
L
L
L
H
L
Short load to VCC  
H
10/17  
VN06  
Electrical specifications  
Figure 7.  
Waveforms  
Figure 8.  
Over current test circuit  
11/17  
Application information  
VN06  
3
Application information  
Figure 9.  
Typical application circuit with a schottky diode for reverse supply protection  
Figure 10. Typical application circuit with separate signal ground  
12/17  
 
 
VN06  
Application information  
3.1  
Functional description  
The device has a diagnostic output which indicates open load conditions in off state as well  
as in on state, output shorted to V and overtemperature. The truth table shows input,  
CC  
diagnostic and output voltage level in normal operation and in fault conditions. The output  
signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering.  
The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms.  
This means that a disconnection during normal operation, with a duration of less than 5 ms  
does not affect the status output. Equally, any re-connection of less than 5 ms during a  
disconnection duration does not affect the status output. No delay occur for the status to go  
low in case of overtemperature conditions. From the falling edge of the input signal the  
status output initially low in fault condition (over temperature or open load) will go back with  
a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load.  
These feature fully comply with International Standard Office (I.S.O.) requirement for  
automotive High Side Driver. To protect the device against short circuit and over current  
conditions, the thermal protection turns the integrated Power MOS off at a minimum junction  
temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically  
turned on again. In short circuit the protection reacts with virtually no delay, the sensor being  
located in the region of the die where the heat is generated. Driving inductive loads, an  
internal function of the device ensures the fast demagnetization with a typical voltage  
(Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to  
the formula: Pdem = 0.5 ² Lload ² (Iload)2 ² [(VCC+Vdemag)/Vdemag] ² f where f =  
switching frequency and Vdemag = demagnetization voltage Based on this formula it is  
possible to know the value of inductance and/or current to avoid a thermal shutdown. The  
maximum inductance which causes the chip temperature to reach the shutdown  
temperature in a specific thermal environment, is infact a function of the load current for a  
fixed VCC, Vdemag and f.  
3.2  
3.3  
Protecting the device agaist load dump - test pulse 5  
The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the  
ISO T/R 7637/1 without any external component. This means that all functions of the device  
are performed as designed after exposure to disturbance at level II. The VN03 is able to  
withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between pin  
1 and ground plus a filter capacitor of 1000 µF between pin 3 and ground (if R  
20 ).  
LOAD  
Protecting the device against reverse battery  
The simplest way to protect the device against a continuous reverse battery voltage (-26V)  
is to insert a schottky diode between pin 1 (GND) and ground, as shown in the typical  
application circuit (Figure 9.). The consequences of the voltage drop across this diode are  
as follows:  
If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,  
VIH thresholds and VSTAT are increased by VF with respect to power GND).  
The undervoltage shutdown level is increased by VF.  
If there is no need for the control unit to handle external analog signals referred to the power  
GND, the best approach is to connect the reference potential of the control unit to node [1]  
(see Figure 10.), which becomes the common signal GND for the whole control board  
avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode.  
13/17  
Package and packing information  
VN06  
4
Package and packing information  
4.1  
ECOPACK® packages  
®
In order to meet environmental requirements, ST offers these devices in ECOPACK  
®
packages. ECOPACK packages are lead-free. The category of Second Level Interconnect  
is marked on the package and on the inner box label, in compliance with JEDEC Standard  
JESD97. The maximum ratings related to soldering conditions are also marked on the inner  
box label.  
ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com.  
4.2  
PENTAWATT mechanical data  
Figure 11. PENTAWATT package dimensions  
14/17  
 
VN06  
Package and packing information  
Table 9.  
PENTAWATT mechanical data  
Dim.  
mm  
Min.  
Typ.  
Max.  
4.8  
A
C
1.37  
2.8  
D
2.4  
1.2  
0.35  
0.8  
1
D1  
E
1.35  
0.55  
1.05  
1.4  
F
F1  
G
3.2  
6.6  
3.4  
6.8  
3.6  
G1  
H2  
H3  
L
7
10.4  
10.4  
10.05  
17.85  
15.75  
21.4  
L1  
L2  
L3  
L5  
L6  
L7  
M
22.5  
2.6  
15.1  
6
3
15.8  
6.6  
4.5  
4
M1  
Diam.  
3.65  
3.85  
15/17  
Revision history  
VN06  
5
Revision history  
Table 10. Document revision history  
Date  
Revision  
Changes  
Sep-1994  
1
Initial release.  
Document converted in corporate template.  
06-Nov-2008  
2
Added Section 4.1: ECOPACK® packages.  
16/17  
VN06  
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17/17  

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CALOGIC

VN0605TT2

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
VISHAY

VN0606

N-Channel Enhancement-Mode Vertical DMOS FETs
SUPERTEX