VN30N [STMICROELECTRONICS]
HIGH SIDE SMART POWER SOLID STATE RELAY; 高侧智能功率固态继电器
| 型号： | VN30N |
| 厂家： | 
ST |
| 描述： | HIGH SIDE SMART POWER SOLID STATE RELAY |
| 文件： | 总10页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN30N
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
IOUT
VCC
VN30N
60 V
0.03 Ω
45 A
26 V
■
OUTPUT CURRENT (CONTINUOUS): 45A @
Tc=25oC
■
■
■
■
■
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
DESCRIPTION
The VN30N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
PENTAWATT
(in-line)
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
ORDER CODES:
The input control is 5V logic level compatible.
PENTAWATT vertical
VN30N
PENTAWATT horizontal VN30N (011Y)
PENTAWATT in-line VN30N (012Y)
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
1/10
September 1994
VN30N
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
60
Unit
V
V(BR)DSS Drain-Source Breakdown Voltage
IOUT
IR
Output Current (cont.)
45
A
Reverse Output Current
Input Current
-45
A
IIN
±10
mA
V
-VCC
ISTAT
VESD
Ptot
Tj
Reverse Supply Voltage
Status Current
-4
±10
mA
V
Electrostatic Discharge (1.5 kΩ, 100 pF)
Power Dissipation at Tc ≤ 25 oC
Junction Operating Temperature
Storage Temperature
2000
108
W
-40 to 150
-55 to 150
oC
oC
Tstg
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
2/10
VN30N
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
1.15
60
oC/W
oC/W
Rthj-amb
Thermal Resistance Junction-ambient
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
VCC
Parameter
Supply Voltage
Test Conditions
Min.
Typ.
Max.
Unit
7
26
V
Ron
On State Resistance
IOUT = 18 A
IOUT = 18 A
0.06
0.03
Ω
Ω
Tj = 25 oC
IS
Supply Current
Off State
On State
Tj ≥ 25 oC
50
15
µA
mA
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time Of IOUT = 18 A Resistive Load
Output Current
30
µs
Input Rise Time < 0.1 µs Tj = 25 oC
Rise Time Of Output
Current
IOUT = 18 A Resistive Load
100
80
µs
µs
µs
Input Rise Time < 0.1 µs Tj = 25 oC
Turn-off Delay Time Of IOUT = 18 A Resistive Load
Output Current
Input Rise Time < 0.1 µs Tj = 25 oC
Fall Time Of Output
Current
IOUT = 18 A Resistive Load
40
Input Rise Time < 0.1 µs Tj = 25 oC
(di/dt)on Turn-on Current Slope IOUT = 18 A
IOUT = IOV
0.5
3
A/µs
A/µs
(di/dt)off Turn-off Current Slope IOUT = 18 A
IOUT = IOV
3
4
A/µs
A/µs
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VIL
Input Low Level
Voltage
0.8
V
VIH
Input High Level
Voltage
2
(*)
V
V
VI(hyst.) Input Hysteresis
Voltage
0.5
IIN
Input Current
VIN = 5 V
250
500
µA
VICL
Input Clamp Voltage
IIN = 10 mA
IIN = -10 mA
6
-0.7
V
V
PROTECTIONS AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSTAT (•) Status Voltage Output ISTAT = 1.6 mA
0.4
V
Low
VUSD
Under Voltage Shut
Down
6.5
7
V
3/10
VN30N
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
Parameter
Test Conditions
ISTAT = 10 mA
Min.
Typ.
Max.
Unit
VSCL (•) Status Clamp Voltage
6
-0.7
V
V
ISTAT = -10 mA
tSC
Switch-off Time in
Short Circuit Condition
at Start-Up
RLOAD < 10 mΩ
Tc = 25 oC
1
ms
IOV
IAV
Over Current
RLOAD < 10 mΩ
RLOAD < 10 mΩ
-40 ≤ Tc ≤ 125 oC
Tc = 85 oC
140
2.5
A
A
Average Current in
Short Circuit
IOL
TTSD
TR
Open Load Current
Level
5
1250
mA
oC
Thermal Shut-down
Temperature
140
Reset Temperature
125
oC
(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
(•) Status determination > 100 µs after the switching edge.
FUNCTIONAL DESCRIPTION
The device has diagnostic output which
The consequences of the voltage drop across
this diode are as follows:
a
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again.
– If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
– The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
4/10
VN30N
TRUTH TABLE
INPUT
OUTPUT
DIAGNOSTIC
Normal Operation
L
H
L
H
H
H
Open Circuit (No Load)
Over-temperature
Under-voltage
H
H
X
H
L
L
L
L
H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
5/10
VN30N
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
6/10
VN30N
Pentawatt (vertical) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.8
MIN.
MAX.
A
C
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
1.37
2.8
D
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
D1
E
1.35
0.55
1.05
1.4
F
F1
G
3.2
6.6
3.4
6.8
3.6
0.134
0.268
G1
H2
H3
L
7
10.4
10.4
10.05
0.396
17.85
15.75
21.4
0.703
0.620
0.843
0.886
L1
L2
L3
L5
L6
L7
M
22.5
2.6
15.1
6
3
0.102
0.594
0.236
0.118
0.622
0.260
15.8
6.6
4.5
4
0.177
0.157
M1
Dia
3.65
3.85
0.144
0.152
L
L1
L2
L3
L5
Dia.
L7
P010E
L6
7/10
VN30N
Pentawatt (horizontal) MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
4.8
MIN.
TYP.
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.590
0244
A
C
1.37
2.8
D
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
D1
E
1.35
0.55
1.05
1.4
F
F1
G
3.2
6.6
3.4
6.8
3.6
0.134
0.268
G1
H2
H3
L
7
10.4
10.4
15
10.05
14.2
5.7
0.396
0.559
L1
L2
L3
L5
L6
L7
Dia
6.2
14.6
3.5
15.2
4.1
0.598
0.161
0.118
0.622
0.260
0.152
0.137
0.102
0.594
0.236
0.144
2.6
3
15.1
6
15.8
6.6
3.65
3.85
P010F
8/10
VN30N
Pentawatt (In- Line) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.8
MIN.
MAX.
A
C
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.937
1.028
0.118
0.622
0.260
0.152
1.37
2.8
D
2.4
1.2
0.35
0.8
1
0.094
0.047
0.014
0.031
0.039
0.126
0.260
D1
E
1.35
0.55
1.05
1.4
F
F1
G
3.2
6.6
3.4
6.8
3.6
0.134
0.268
G1
H2
H3
L2
L3
L5
L6
L7
Dia
7
10.4
10.4
23.8
26.1
3
10.05
23.05
25.3
2.6
0.396
0.907
0.996
0.102
0.594
0.236
0.144
23.4
0.921
1.010
25.65
15.1
6
15.8
6.6
3.65
3.85
P010D
9/10
VN30N
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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10/10
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