VND5004CSP30-E [STMICROELECTRONICS]

Double 4mOhm high side driver with analog current sense for automotive applications;
VND5004CSP30-E
型号: VND5004CSP30-E
厂家: ST    ST
描述:

Double 4mOhm high side driver with analog current sense for automotive applications

驱动 接口集成电路
文件: 总28页 (文件大小:363K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VND5004CSP30  
Double 4 mȍ high-side driver with analog CurrentSense for  
automotive applications  
Datasheet - production data  
– Reverse battery protection with self switch-  
on of the PowerMOS  
– Electrostatic discharge protection  
0XOWL3RZHU6ꢀꢁꢂꢀ  
*$3*ꢀꢁꢂꢁꢂꢃꢂꢀꢄꢀ&)7  
Applications  
x
All types of resistive, inductive and capacitive  
loads  
Features  
x
Suitable for power management applications  
Max transient supply voltage  
Operating voltage range  
V
V
R
41 V  
4.5 to 27 V  
4 mȍ  
CC  
CC  
ON  
Description  
Max On-State resistance (per ch.)  
Current limitation (typ)  
The device is a double channel high-side driver  
manufactured using STMicroelectronics  
proprietary VIPower M0-5 technology. It is  
I
100 A  
LIMH  
®
(1)  
Off state supply current  
I
2 μA  
S
intended for driving resistive or inductive loads  
1. Typical value with all loads connected  
with one side connected to ground. Active V  
pin voltage clamp and load dump protection  
CC  
x
x
AEC-Q100 qualified  
General  
circuit protect the devices against transients on  
the V pin.  
CC  
– Inrush current active management by  
power limitation  
The device integrates an analog current sense  
which delivers a current proportional to the load  
current (according to a known ratio) when  
CS_DIS is driven low or left open. When CS_DIS  
is driven high, the CURRENT SENSE pin is high  
impedance.  
– Very low stand-by current  
– 3.0 V CMOS compatible input  
– Optimized electromagnetic emission  
– Very low electromagnetic susceptibility  
Output current limitation protects the devices in  
overload condition. In case of long duration  
overload, the device limits the dissipated power to  
a safe level up to thermal shutdown intervention.  
Thermal shutdown with automatic restart allows  
the device to recover normal operation as soon as  
a fault condition disappears.  
– In compliance with the 2002/95/EC  
European directive  
x
x
Diagnostic functions  
– Proportional load current sense  
– Current sense disable  
– Thermal shutdown indication  
Protection  
– Undervoltage shutdown  
– Overvoltage clamp  
– Load current limitation  
– Thermal shutdown  
– Self limiting of fast thermal transients  
– Protection against loss of ground and loss  
of V  
CC  
January 2017  
DocID027938 Rev 3  
1/28  
This is information on a product in full production.  
www.st.com  
Contents  
VND5004CSP30  
Contents  
1
2
Block diagram and pin configurations . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
2.1  
2.2  
2.3  
2.4  
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
3
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
3.1  
3.2  
3.3  
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 19  
4
5
Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
4.1 MultiPowerSO-30 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
5.1  
5.2  
MultiPowerSO-30 package information . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
MultiPowerSO-30 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
6
7
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
2/28  
DocID027938 Rev 3  
VND5004CSP30  
List of tables  
List of tables  
Table 1.  
Table 2.  
Table 3.  
Table 4.  
Table 5.  
Table 6.  
Table 7.  
Table 8.  
Table 9.  
Table 10.  
Table 11.  
Table 12.  
Table 13.  
Table 14.  
Table 15.  
Table 16.  
Table 17.  
Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Suggested connections for unused and n.c. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Switching (VCC = 13 V; Tj = 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
CurrentSense (8 V < V < 16 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
CC  
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Thermal parameters for MultiPowerSO-30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
MultiPowerSO-30 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
DocID027938 Rev 3  
3/28  
3
List of figures  
VND5004CSP30  
List of figures  
Figure 1.  
Figure 2.  
Figure 3.  
Figure 4.  
Figure 5.  
Figure 6.  
Figure 7.  
Figure 8.  
Figure 9.  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Configuration diagram (not to scale) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 10. Input low level. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 11. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 12. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 13. On state resistance vs. T  
Figure 14. On state resistance vs. V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
case  
CC  
Figure 15. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Figure 16. Turn-On voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Figure 17.  
I
vs. T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
LIMH  
case  
Figure 18. Turn-Off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Figure 19. CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Figure 20. CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Figure 21. CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Figure 22. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Figure 23. Maximum turn off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 24. MultiPowerSO-30 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Figure 25. Rthj-amb vs. PCB copper area in open box free air condition (one channel ON). . . . . . . . 20  
Figure 26. MultiPowerSO-30 thermal impedance junction ambient single pulse (one channel ON) . . 21  
Figure 27. Thermal fitting model of a double channel HSD in MultiPowerSO-30 . . . . . . . . . . . . . . . . 21  
Figure 28. MultiPowerSO-30 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Figure 29. MultiPowerSO-30 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
4/28  
DocID027938 Rev 3  
VND5004CSP30  
Block diagram and pin configurations  
1
Block diagram and pin configurations  
Figure 1. Block diagram  
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Table 1. Pin functions  
Function  
Name  
VCC  
Battery connection  
Power output  
OUTPUT1,2  
GND  
Ground connection  
Voltage controlled input pin with hysteresis, CMOS compatible. Controls  
output switch state  
INPUT1,2  
CURRENT SENSE1,2 Analog current sense pin, delivers a current proportional to the load current  
CS_DIS Active high CMOS compatible pin, to disable the current sense pins  
DocID027938 Rev 3  
5/28  
27  
Block diagram and pin configurations  
VND5004CSP30  
Figure 2. Configuration diagram (not to scale)  
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Table 2. Suggested connections for unused and n.c. pins  
Current  
Connection /  
pin  
For test  
only  
N.C.  
Output  
Input  
CS_DIS  
Sense  
(1)  
Floating  
N.R.  
X
X
X
X
X
X
Through 1 k:ꢀ  
Through10 k:ꢀ Through 10 k:ꢀ  
resistor resistor  
To ground  
N.R.  
N.R.  
resistor  
1. Not recommended.  
6/28  
DocID027938 Rev 3  
VND5004CSP30  
Electrical specifications  
2
Electrical specifications  
Figure 3. Current and voltage conventions  
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2.1  
Absolute maximum ratings  
Stressing the device above the ratings listed in Table 3 may cause permanent damage to  
the device. These are stress ratings only and operation of the device at these or any other  
conditions above those indicated in the operating sections of this specification is not implied.  
Exposure to the conditions in this section for extended periods may affect device reliability.  
Table 3. Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
V
DC supply voltage  
27  
V
V
CC  
V
Transient supply voltage (T < 400 msꢁꢀR  
Reverse DC supply voltage  
DC output current  
> 0.5 ȍꢂ  
41  
16  
CCPK  
load  
-V  
V
CC  
I
Internally limited  
70  
A
OUT  
-I  
Reverse DC output current  
DC input current  
A
OUT  
I
-1 to 10  
-1 to 10  
mA  
mA  
IN  
I
DC current sense disable input current  
CSD  
Vcc-41  
+Vcc  
V
V
V
Current sense maximum voltage (V > 0 V)  
CSENSE  
CC  
Maximum switching energy (single pulse)  
E
342  
mJ  
(L = 0.3 mH; R = 0 ȍ; V = 13.5 V; T = 150 °C;  
jstart  
MAX  
L
bat  
I
= I (typ.))  
OUT  
limL  
Electrostatic discharge (Human Body Model: R = 1.5 kȍꢃ  
C = 100 pF)  
V
V
2000  
750  
V
V
ESD  
Charge device model (CDM-AEC-Q100-011)  
ESD  
DocID027938 Rev 3  
7/28  
27  
Electrical specifications  
Symbol  
VND5004CSP30  
Table 3. Absolute maximum ratings (continued)  
Parameter  
Value  
Unit  
T
Junction operating temperature  
Storage temperature  
-40 to 150  
-55 to 150  
°C  
°C  
j
T
STG  
2.2  
Thermal data  
Table 4. Thermal data  
Parameter  
Symbol  
Max value  
Unit  
R
Thermal resistance junction-case (with one channel ON)  
Thermal resistance junction-ambient  
0.35  
°C/W  
°C/W  
thj-case  
(1)  
R
58  
thj-amb  
1. PCB FR4 area 58 mmX58 mm, PCB thickness 2 mm, Cu thickness 35 Pm, minimum pad layout.  
8/28  
DocID027938 Rev 3  
VND5004CSP30  
Electrical specifications  
2.3  
Electrical characteristics  
Values specified in this section are for 8 V < V < 24 V, -40 °C < T < 150 °C, unless  
CC  
j
otherwise stated.  
Table 5. Power section  
Test conditions  
Symbol  
Parameter  
Min. Typ. Max. Unit  
Operating supply  
voltage  
V
4.5  
13  
3.5  
0.5  
27  
V
V
V
CC  
V
Undervoltage shutdown  
4.5  
USD  
Undervoltageshut-down  
hysteresis  
V
USDhyst  
I
I
I
= 15 A; T = 25 °C  
4
8
6
mȍ  
mȍ  
mȍ  
OUT  
OUT  
OUT  
j
(1)  
R
On-state resistance  
= 15 A; T = 150 °C  
j
ON  
= 15 A; V = 5 V; T = 25 °C  
CC  
j
R
in reverse battery  
dson  
R
V
=-13V; I  
=-15A; T =25°C  
4
mȍ  
V
ON REV  
CC  
OUT  
j
condition  
V
V
clamp voltage  
I
=20 mA; I =0A  
OUT1,2  
41  
46  
52  
clamp  
CC  
CC  
Off state; V = 13 V; T = 25 °C;  
(2)  
(2)  
CC  
j
2
5
μA  
V
= V  
= V  
= V  
= 0 V  
IN  
OUT  
SENSE  
CSD  
I
Supply current  
S
On state; V = 13 V; V = 5 V;  
CC  
IN  
3.5  
6
3
5
mA  
μA  
μA  
I
= 0 A  
OUT  
V
= V  
= 0 V; V = 13 V;  
IN  
OUT CC  
0
0
0.01  
T = 25 °C  
j
Off-state output  
current  
I
(1)  
L(off)  
V
= V  
= 0 V; V = 13 V;  
IN  
OUT CC  
T = 125 °C  
j
1. For each channel.  
2. PowerMOS leakage included.  
Table 6. Switching (V = 13 V; T = 25 °C)  
CC  
j
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
t
Turn-on delay time  
Turn-on delay time  
R = 0.87 ȍ (see Figure 5)  
25  
35  
μs  
μs  
d(on)  
L
t
R = 0.87 ȍ (see Figure 5)  
L
d(off)  
See  
Figure 16  
(dV  
(dV  
/dt)  
Turn-on voltage slope R = 0.87 ȍ  
Vμs  
Vμs  
mJ  
OUT  
on  
off  
L
See  
Figure 16  
/dt)  
Turn-off voltage slope R = 0.87 ȍ  
OUT  
L
Switching energy  
W
R = 0.87 ȍ (see Figure 5)  
5.4  
2.3  
ON  
L
losses during t  
won  
Switching energy  
losses during t  
W
R = 0.87 ȍ (see Figure 5)  
mJ  
OFF  
L
woff  
DocID027938 Rev 3  
9/28  
27  
Electrical specifications  
Symbol  
VND5004CSP30  
Table 7. Logic input  
Test conditions  
Parameter  
Min. Typ. Max. Unit  
V
Input low level voltage  
Low level input current  
Input high level voltage  
High level input current  
Input hysteresis voltage  
0.9  
V
μA  
V
IL1,2  
I
V =0.9V  
1
IL1,2  
IN  
V
2.1  
IH1,2  
IH1,2  
I
V =2.1V  
10  
7
μA  
V
IN  
V
0.25  
5.5  
I(hyst)1,2  
I
I
= 1 mA  
V
IN  
IN  
V
Input clamp voltage  
ICL1,2  
= -1 mA  
-0.7  
V
V
CS_DIS low level voltage  
Low level CS_DIS current  
CS_DIS high level voltage  
High level CS_DIS current  
CS_DIS hysteresis voltage  
0.9  
V
CSDL  
I
V
V
= 0.9 V  
1
μA  
V
CSDL  
CSD  
CSD  
V
2.1  
CSDH  
CSDH  
I
= 2.1 V  
10  
7
μA  
V
V
0.25  
5.5  
CSD(hyst)  
I
I
= 1 mA  
V
CSD  
CSD  
V
CS_DIS clamp voltage  
CSCL  
= -1 mA  
-0.7  
V
Table 8. Protection and diagnostics  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
V
= 13 V  
70  
100  
140  
140  
A
A
CC  
I
Short circuit current  
limH  
5 V < V < 24 V  
CC  
Short circuit current  
during thermal cycling  
I
V
= 13 V; T < T < T  
TSD  
40  
A
limL  
CC  
R
j
T
Shutdown temperature  
Reset temperature  
150  
175  
200  
°C  
°C  
TSD  
T
T
+1  
T
+5  
RS  
R
RS  
Thermal reset of  
STATUS  
T
135  
°C  
°C  
V
RS  
Thermal hysteresis  
T
7
HYST  
(T  
-T )  
TSD  
R
Turn-off output voltage  
clamp  
I
= 2 A; V = 0;  
OUT IN  
V
V
-27  
V
-30  
V
-33  
CC  
DEMAG  
CC  
CC  
L = 6 mH  
Note:  
To ensure long term reliability under heavy overload or short-circuit conditions, protection  
and related diagnostic signals must be used together with a proper software strategy. If the  
device is subjected to abnormal conditions, this software must limit the duration and number  
of activation cycles.  
10/28  
DocID027938 Rev 3  
VND5004CSP30  
Symbol  
Electrical specifications  
Table 9. CurrentSense (8 V < V < 16 V)  
CC  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
I
= 15 A; V  
= 4 V; V  
= 0 V;  
= 0 V;  
OUT  
SENSE  
CSD  
CSD  
K
I
I
/I  
T = -40 °C  
11530 16000 19340  
12730 16000 19270  
1
2
OUT SENSE  
j
T = 25 °C to 150 °C  
j
I
= 30 A; V  
SENSE  
= 4 V; V  
OUT  
K
/I  
T = -40 °C  
13430 16150 17880  
14500 16150 17880  
OUT SENSE  
j
T = 25 °C to 150 °C  
j
I
V
= 0 A; V  
= 0 V; V  
CSD  
= 5 V;  
= 0 V;  
OUT  
SENSE  
0
0
5
5
μA  
μA  
V
= 0 V; T = -40 °C to 150 °C  
IN  
j
I
Analog sense current  
SENSE0  
I
V
= 0 A; V  
= 0 V; V  
OUT  
SENSE CSD  
400  
= 5 V; T = -40 °C to 150 °C  
IN  
j
Max analog sense output  
voltage  
I
R
= 45 A; V  
= 0 V;  
OUT  
CSD  
V
SENSE  
= 3.9 kȍ  
SENSE  
Analog sense output  
voltage in overtemperature  
condition  
V
V
= 13 V; R  
= 3.9 kȍ  
9
8
V
SENSEH  
SENSEH  
CC  
SENSE  
SENSE  
Analog sense output  
current in overtemperature  
condition  
I
V
= 13 V; V  
= 5 V  
mA  
Ps  
CC  
V
I
< 4 V; 5 A < I  
= 90% of I  
< 30 A;  
OUT  
SENSE  
Delay response time from  
falling edge of CS_DIS pin  
t
50  
100  
20  
SENSE  
SENSE max  
DSENSE1H  
(see Figure 4)  
V
I
< 4 V; 5 A < I  
= 10% of I  
< 30 A;  
SENSE  
OUT  
Delay response time from  
rising edge of CS_DIS pin  
t
t
5
Ps  
Ps  
Ps  
SENSE  
SENSE max  
DSENSE1L  
(see Figure 4)  
V
I
< 4 V; 5 A < I  
= 90% of I  
< 30 A;  
SENSE  
OUT  
Delay response time from  
rising edge of INPUT pin  
270  
100  
600  
250  
SENSE  
SENSE max  
DSENSE2H  
(see Figure 4)  
V
I
< 4 V; 5 A < I  
= 10% of I  
< 30 A;  
SENSE  
OUT  
Delay response time from  
falling edge of INPUT pin  
t
SENSE  
SENSE max  
DSENSE2L  
(see Figure 4)  
Figure 4. Current sense delay characteristics  
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*$3*5,ꢁꢁꢇꢋꢁ  
DocID027938 Rev 3  
11/28  
27  
Electrical specifications  
VND5004CSP30  
Table 10. Truth table  
(1)  
SENSEn(V  
= 0V)  
CSD  
Conditions  
INPUTn  
OUTPUTn  
(see Figure 3)  
L
L
0
Normal operation  
Overtemperature  
Undervoltage  
H
H
Nominal  
L
L
L
0
H
V
SENSEH  
L
L
L
0
0
H
L
H
H
L
L
L
0
Short circuit to GND  
0 if T < T  
j
TSD  
(R d 10 mȍ)  
SC  
V
if T > T  
SENSEH  
j
TSD  
L
H
H
0
Short circuit to V  
CC  
H
< Nominal  
Negative output voltage clamp  
L
L
0
1. If VCSD is high, the SENSE output is at a high impedance. Its potential depends on leakage currents and  
the external circuit.  
Figure 5. Switching characteristics  
9
287  
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12/28  
DocID027938 Rev 3  
VND5004CSP30  
Electrical specifications  
Table 11. Electrical transient requirements (part 1)  
(1)  
ISO 7637-2:  
2004(E)  
Test levels  
Number of  
pulses or  
test times  
Burst cycle/pulse  
repetition time  
Delays and  
Impedance  
III  
IV  
Test pulse  
5000  
pulses  
1
-75 V  
-100 V  
+50 V  
0.5 s  
0.2 s  
5 s  
5 s  
2 ms, 10 ȍ  
50 μs, 2 ȍ  
5000  
pulses  
2a  
+37 V  
3a  
3b  
4
-100 V  
+75 V  
-6 V  
-150 V  
+100 V  
-7 V  
1h  
90 ms  
90 ms  
100 ms  
100 ms  
0.1 μs, 50 ȍ  
0.1 μs, 50 ȍ  
100 ms, 0.01 ȍ  
400 ms, 2 ȍ  
1h  
1 pulse  
1 pulse  
(2)  
5b  
+65 V  
+87 V  
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.  
2. Valid in case of external load dump clamp: 40V maximum referred to ground. The protection strategy  
allows PowerMOS to be cyclically switched on during load dump, so distributing the load dump energy  
along the time and to transfer a part of it to the load.  
Table 12. Electrical transient requirements (part 2)  
(1)  
ISO 7637-2:  
2004(E)  
Test level results  
III  
IV  
Test pulse  
1
C
C
C
C
C
C
C
C
C
C
C
C
2a  
3a  
3b  
4
(2) (3)  
5b  
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b  
2. Valid in case of external load dump clamp: 40V maximum referred to ground. The protection strategy  
allows PowerMOS to be cyclically switched on during load dump, so distributing the load dump energy  
along the time and to transfer a part of it to the load.  
3. Suppressed load dump (pulse 5b) is withstood with a minimum load connected as specified in Table 3.:  
Absolute maximum ratings.  
Table 13. Electrical transient requirements (part 3)  
Class  
Contents  
C
All functions of the device are performed as designed after exposure to disturbance.  
One or more functions of the device are not performed as designed after exposure  
to disturbance and cannot be returned to proper operation without replacing the  
device.  
E
DocID027938 Rev 3  
13/28  
27  
Electrical specifications  
VND5004CSP30  
Figure 6. Waveforms  
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14/28  
DocID027938 Rev 3  
VND5004CSP30  
Electrical specifications  
2.4  
Electrical characteristics curves  
Figure 7. Off state output current  
Figure 8. High level input current  
Iloff (uA)  
Iih (uA)  
5
4.5  
4
6
5.4  
4.8  
4.2  
3.6  
3
Off State  
Vcc=13V  
Vin=Vout=0V  
Vin=2.1V  
3.5  
3
2.5  
2
2.4  
1.8  
1.2  
0.6  
0
1.5  
1
0.5  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
175  
175  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
Tc (°C)  
Figure 9. Input clamp voltage  
Figure 10. Input low level  
Vicl (V)  
7
Vil (V)  
2
1.8  
1.6  
1.4  
1.2  
1
6.75  
6.5  
Iin=1mA  
6.25  
6
0.8  
0.6  
0.4  
0.2  
5.75  
5.5  
5.25  
5
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
Tc (°C)  
Figure 11. Input high level  
Figure 12. Input hysteresis voltage  
Vih (V)  
4
Vihyst (V)  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
3.5  
3
2.5  
2
1.5  
1
0.5  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
Tc (°C)  
DocID027938 Rev 3  
15/28  
27  
Electrical specifications  
VND5004CSP30  
Figure 13. On state resistance vs. T  
Figure 14. On state resistance vs. V  
CC  
case  
Ron (mOhm)  
6
Ron (mOhm)  
6
5.4  
4.8  
4.2  
3.6  
3
5.4  
4.8  
4.2  
3.6  
3
Iout=15A  
Vcc=13V  
Tc=150°C  
Tc=125°C  
Tc=25°C  
Tc=-40°C  
2.4  
1.8  
2.4  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
4
8
12  
16  
Vcc  
20  
24  
28  
Tc (°C)  
Figure 15. Undervoltage shutdown  
Figure 16. Turn-On voltage slope  
(dVout/dt)on (V/ms)  
500  
Vusd (V)  
16  
450  
14  
12  
10  
8
Vcc=13V  
RI=0.87Ohm  
400  
350  
300  
250  
200  
150  
100  
50  
6
4
2
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
Tc (°C)  
Figure 17. I  
vs. T  
Figure 18. Turn-Off voltage slope  
LIMH  
case  
Ilimh (A)  
150  
(dVout/dt)off (V/ms)  
500  
140  
130  
120  
110  
100  
90  
450  
Vcc=13V  
Vcc=13V  
RI=0.87Ohm  
400  
350  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
Tc (°C)  
16/28  
DocID027938 Rev 3  
VND5004CSP30  
Electrical specifications  
Figure 19. CS_DIS high level voltage  
Figure 20. CS_DIS clamp voltage  
Vcsdh (V)  
4
Vcsdcl (V)  
8
7.5  
7
3.5  
3
2.5  
2
6.5  
6
1.5  
1
5.5  
5
0.5  
0
4.5  
4
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
Tc (°C)  
Figure 21. CS_DIS low level voltage  
Vcsdl (V)  
4
3.5  
3
2.5  
2
1.5  
1
0.5  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
Tc (°C)  
DocID027938 Rev 3  
17/28  
27  
Application information  
VND5004CSP30  
3
Application information  
Figure 22. Application schematic  
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3.1  
MCUI/Os protection  
When negative transients are present on the V line, the control pins will be pulled  
CC  
negative to approximately -1.5V.  
ST suggests the insertion of resistors (R ) in the lines to prevent the μC I/Os pins from  
prot  
latching up.  
The values of these resistors provide a compromise between the leakage current of the μC,  
the current required by the HSD I/Os (input levels compatibility) and the latch-up limit of the  
μC I/Os.  
-V  
/I  
d R  
d (V  
-V ) / I  
OHμC IH IHmax  
CCpeak latchup  
prot  
Calculation example:  
For V = -1.5 V and I  
t 20 mA; V t 4.5 V  
OHμC  
CCpeak  
latchup  
prot  
75 ȍ d R  
d 240 kȍ.  
prot  
Recommended values: R  
= 10 kȍꢁꢀC  
= 10 nF  
EXT  
3.2  
Load dump protection  
D is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the  
ld  
V
max rating. The same applies if the device will be subject to transients on the V  
CCPK  
CC  
line that are greater than the ones shown in Table 11.  
18/28  
DocID027938 Rev 3  
VND5004CSP30  
Application information  
3.3  
Maximum demagnetization energy (VCC = 13.5 V)  
Figure 23. Maximum turn off current versus inductance  
100  
10  
1
A
B
C
1
L (mH)  
10  
100  
A: T  
= 150°C single pulse  
jstart  
B: T  
C: T  
= 100°C repetitive pulse  
= 125°C repetitive pulse  
jstart  
jstart  
V , I  
IN  
L
Demagnetization  
Demagnetization  
Demagnetization  
t
Note:  
Values are generated with R = 0 ȍꢅ  
L
In case of repetitive pulses, T  
(at the beginning of each demagnetization) of every pulse  
jstart  
must not exceed the temperature specified above for curves A and B.  
DocID027938 Rev 3  
19/28  
27  
Package and PC board thermal data  
VND5004CSP30  
4
Package and PC board thermal data  
4.1  
MultiPowerSO-30 thermal data  
Figure 24. MultiPowerSO-30 PC board  
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Note:  
Layout condition of R and Z measurements (PCB: Double layer, Thermal Vias, FR4  
th th  
area = 58 mm x 58 mm, PCB thickness = 2 mm, Cu thickness = 35 μm (front and back  
2
side), Copper areas: from minimum pad layout to 16 cm ).  
Figure 25.  
R
vs. PCB copper area in open box free air condition (one channel ON)  
thj-amb  
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20/28  
DocID027938 Rev 3  
VND5004CSP30  
Package and PC board thermal data  
Figure 26. MultiPowerSO-30 thermal impedance junction ambient single pulse (one  
channel ON)  
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ꢀꢈꢀꢉ  
ꢀꢈꢉ  
ꢉꢀ  
ꢉꢀꢀ  
ꢉꢀꢀꢀ  
7LPHꢆꢃVꢅ  
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Figure 27. Thermal fitting model of a double channel HSD in MultiPowerSO-30  
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Note:  
The fitting model is a simplified thermal tool and is valid for transient evolutions where the  
embedded protections (power limitation or thermal cycling during thermal shutdown) are not  
triggered.  
DocID027938 Rev 3  
21/28  
27  
Package and PC board thermal data  
VND5004CSP30  
Equation 1: pulse calculation formula  
Z
= R  
˜ G + Z  
1 Gꢂ  
THG  
TH  
G = t e T  
THtp  
where  
p
Table 14. Thermal parameters for MultiPowerSO-30  
2
Area/island (cm )  
Footprint  
4
R1 (°C/W)  
R2 (°C/W)  
R3 (°C/W)  
R4 (°C/W)  
R5 (°C/W)  
R6 (°C/W)  
R7 (°C/W)  
R8 (°C/W)  
C1 (W.s/°C)  
C2 (W.s/°C)  
C3 (W.s/°C)  
C4 (W.s/°C)  
C5 (W.s/°C)  
C6 (W.s/°C)  
C7 (W.s/°C)  
C8 (W.s/°C)  
0.05  
0.3  
0.5  
1.3  
14  
44.7  
0.05  
0.3  
23.7  
0.005  
0.008  
0.01  
0.3  
0.6  
5
11  
0.005  
0.008  
22/28  
DocID027938 Rev 3  
VND5004CSP30  
Package information  
5
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
®
ECOPACK is an ST trademark.  
5.1  
MultiPowerSO-30 package information  
Figure 28. MultiPowerSO-30 package outline  
*$3*ꢀꢂꢂꢁꢂꢀꢁꢋꢄꢁ06  
Table 15. MultiPowerSO-30 mechanical data  
Millimeters  
Symbol  
Min.  
Typ.  
Max.  
A
A2  
A3  
B
2.35  
2.25  
0.1  
1.85  
0
0.42  
0.23  
17.1  
18.85  
15.9  
0.58  
0.32  
17.3  
19.15  
16.1  
C
D
17.2  
16  
E
E1  
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Package information  
VND5004CSP30  
Table 15. MultiPowerSO-30 mechanical data (continued)  
Millimeters  
Typ.  
Symbol  
Min.  
Max.  
“e”  
F6  
F7  
F8  
L
1
14.3  
5.45  
0.73  
0.8  
1.15  
10 Deg  
7 Deg  
N
S
0 Deg  
5.2  
MultiPowerSO-30 packing information  
The devices are packed in tape and reel shipments (see Table 16: Device summary on  
page 26).  
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VND5004CSP30  
Package information  
Figure 29. MultiPowerSO-30 tape and reel shipment (suffix “TR”)  
Reel dimension  
Dimension  
mm  
1000  
Base Q.ty  
Bulk Q.ty  
A (max)  
B (min)  
1000  
330  
1.5  
C (± 0.2)  
D (min)  
13  
20.2  
32  
G (+ 2 / -0)  
N (min)  
100  
38.4  
T (max)  
Tape dimensions  
According to Electronic Industries Association (EIA)  
Standard 481 rev. A, Feb 1986  
Description  
Dimension  
mm  
Tape width  
W
32  
4
Tape Hole Spacing  
Component Spacing  
Hole Diameter  
Hole Diameter  
Hole Position  
P0 (± 0.1)  
P
24  
1.5  
2
D (± 0.1/-0)  
D1 (min)  
F (± 0.1)  
K (max)  
P1 (± 0.1)  
14.2  
2.2  
2
Compartment Depth  
Hole Spacing  
End  
Start  
Top  
cover  
tape  
No components  
500 mm min  
Components  
No components  
500 mm min  
Empty components pockets  
User direction of feed  
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Order codes  
VND5004CSP30  
6
Order codes  
Table 16. Device summary  
Order codes  
Tape and reel  
Package  
MultiPowerSO-30  
VND5004CSP30TR-E  
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Revision history  
7
Revision history  
Table 17. Document revision history  
Changes  
Date  
Revision  
09-Jun-2015  
02-Nov-2015  
1
2
Initial release.  
Updated Table 16: Device summary  
– Removed all information relative to tube packing of the product  
– Modified Section 5: Package information.  
11-Jan-2017  
3
– Added AEC-Q100 qualified in the Features section  
– Minor text edits throughout the document  
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IMPORTANT NOTICE – PLEASE READ CAREFULLY  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and  
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on  
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order  
acknowledgement.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or  
the design of Purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2017 STMicroelectronics – All rights reserved  
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