VND5E004ATR-E [STMICROELECTRONICS]
Double 4 m high-side driver with analog current sense for automotive applications;型号: | VND5E004ATR-E |
厂家: | ST |
描述: | Double 4 m high-side driver with analog current sense for automotive applications 驱动 接口集成电路 驱动器 |
文件: | 总43页 (文件大小:974K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VND5E004A-E
VND5E004ASP30-E
Double 4 mhigh-side driver with analog current sense
for automotive applications
Datasheet - production data
– Protection against loss of ground and loss
of V
CC
– Overtemperature shutdown with auto
restart (thermal shutdown)
PQFN - 12x12 Power lead-less
MultiPowerSO-30
– Inrush current active management by
power limitation
– Reverse battery protection with self switch-
on of the Power MOSFET
Features
Max transient supply voltage
Operating voltage range
VCC
41 V
– Electrostatic discharge protection
VCC 4.5 to 28 V
Applications
Max on-state resistance (per ch.) RON
4 m
90 A
2 µA(1)
Current limitation (typ)
Off-state supply current
ILIMH
IS
All types of resistive, inductive and capacitive
loads
Suitable for power management applications
1. Typical value with all loads connected
Description
AEC-Q100 qualified
General
The VND5E004A-E and VND5E004ASP30-E are
double channel high-side drivers manufactured
using ST proprietary VIPower M0-5 technology
– Very low standby current
– 3.0 V CMOS compatible inputs
®
and housed in PQFN-12x12 power lead-less and
MultiPowerSO-30 packages. The devices are
designed to drive 12 V automotive grounded
loads, and to provide protection and diagnostics.
They also implement a 3 V and 5 V
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
CMOS-compatible interface for use with any
microcontroller.
Diagnostic functions
– Proportional load current sense
The devices integrate advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto-
restart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel providing enhanced diagnostic
functions including fast detection of overload and
short-circuit to ground through power limitation
indication, overtemperature indication, short-
– High current sense precision for wide
currents range
– Diagnostic enable pin
– Off-state open-load detection
– Output short to V detection
CC
– Overload and short to ground (power
limitation) indication
– Thermal shutdown indication
Protection
– Undervoltage shutdown
– Overvoltage clamp
circuit to V diagnosis and on-state and off-state
CC
open-load detection. The current sensing and
diagnostic feedback of the whole device can be
disabled by pulling the DE pin low to share the
external sense resistor with similar devices.
– Load current limitation
– Self limiting of fast thermal transients
January 2017
DocID17359 Rev 5
1/43
This is information on a product in full production.
www.st.com
Contents
VND5E004A-E, VND5E004ASP30-E
Contents
1
2
Block diagram and pin configurations . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1
2.2
2.3
2.4
2.5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.1
3.2
3.3
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.3.1
Short to VCC and off-state open-load detection . . . . . . . . . . . . . . . . . . 26
3.4
Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 27
4
5
Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.1
4.2
MultiPowerSO-30 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
PQFN - 12x12 power lead-less thermal data . . . . . . . . . . . . . . . . . . . . . . 31
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.1
5.2
5.3
5.4
MultiPowerSO-30 package information . . . . . . . . . . . . . . . . . . . . . . . . . . 34
PQFN - 12x12 power lead-less package information . . . . . . . . . . . . . . . . 36
MultiPowerSO-30 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
PQFN - 12x12 power lead-less packing information . . . . . . . . . . . . . . . . 39
6
7
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
2/43
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VND5E004A-E, VND5E004ASP30-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Suggested connections for unused and non connected pins . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC = 13 V; Tj = 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Current sense (8 V < V < 18 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
CC
Open-load detection (8 V < V < 18 V; V = 5 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
CC
DE
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical transient requirements (part 1/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 2/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 3/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Thermal parameters for MultiPowerSO-30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Thermal parameters for PQFN - 12x12 power lead-less . . . . . . . . . . . . . . . . . . . . . . . . . . 33
MultiPowerSO-30 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
PQFN - 12x12 power lead-less mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
DocID17359 Rev 5
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3
List of figures
VND5E004A-E, VND5E004ASP30-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Configuration diagram (not to scale). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Open-load off-state delay timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Delay response time between rising edge of output current and rising edge of
current sense (CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 8.
Figure 9.
Output voltage drop limitation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
/I vs I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
I
OUT SENSE
OUT
Figure 10. Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 11. Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 12. Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 13. Intermittent overload. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 14. Off-state open-load with external circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 15. Short to V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CC
Figure 16. T evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
J
Figure 17. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 18. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 19. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 20. Input low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 21. Input high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 22. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 23. On-state resistance vs T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
case
Figure 24. On-state resistance vs V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
CC
Figure 25. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 26. Turn-on voltage slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 27.
I
vs T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
LIMH
case
Figure 28. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 29. DE high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 30. DE clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 31. DE low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 32. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 33. Current sense and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 34. Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 35. MultiPowerSO-30 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 36. Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 28
Figure 37. MultiPowerSO-30 thermal impedance junction ambient single pulse (one channel ON) . . 29
Figure 38. Thermal fitting model of a double channel HSD in MultiPowerSO-30 . . . . . . . . . . . . . . . . 29
Figure 39. 12x12 Power lead-less package PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 40. Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 31
Figure 41. PQFN - 12x12 power lead-less package thermal impedance junction ambient
single pulse (one channel ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 42. Thermal fitting model of a double channel HSD in PQFN - 12x12 power lead-less . . . . . 32
Figure 43. MultiPowerSO-30 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 44. PQFN - 12x12 power lead-less package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 45. MultiPowerSO-30 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 46. PQFN - 12x12 power lead-less tray shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . 39
4/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
List of figures
Figure 47. PQFN - 12x12 power lead-less tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . 40
DocID17359 Rev 5
5/43
5
Block diagram and pin configurations
VND5E004A-E, VND5E004ASP30-E
1
Block diagram and pin configurations
Figure 1. Block diagram
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Table 1. Pin functions
Function
Name
VCC
OUT1,2
GND
Battery connection
Power output
Ground connection
Voltage controlled input pin with hysteresis, CMOS compatible, controls
output switch state
IN1,2
CS1,2
DE
Analog current sense pin; delivers a current proportional to the load current
Active high diagnostic enable pin
6/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Block diagram and pin configurations
Figure 2. Configuration diagram (not to scale)
1 NC
2 NC
12
11
10
9
8
7
6
3 NC
4 GND
5 DE
15
16
6 CS 1
7 CS 2
8 IN 1
9 IN 2
10 NC
11 NC
PQFN -12x12 Power
lead-less
13
14
(bottom view)
5
4
3
2
12 NC
13 FOR TEST ONLY
14 VCC
1
15 OUT 2
16 OUT 1
1
30
V
V
CC
CC
NC
OUT 1
OUT 1
OUT 1
OUT 1
OUT 1
OUT 1
NC
FOR TEST ONLY
NC
NC
GND
DE
CS 1
CS 2
IN 1
V
CC
Heat Slug1
MultiPowerSO-30
(top view)
OUT 2
OUT 2
OUT 2
OUT 2
OUT 2
OUT 2
IN 2
NC
FOR TEST ONLY
NC
15
16
V
V
CC
CC
Table 2. Suggested connections for unused and non connected pins
Connection /
Current
sense
NC(1)
Output
Input
DE
For test only
X
pin
Floating
Not allowed
X
X
X
X
X
Through
1 kresistor
Not
allowed
Through10k
Through
10 kresistor
To ground
Not allowed
resistor
1. Not connected
DocID17359 Rev 5
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42
Electrical specifications
VND5E004A-E, VND5E004ASP30-E
2
Electrical specifications
Figure 3. Current and voltage conventions
IS
VCC
VCC
IDE
IOUT1,2
DE
OUTPUT1,2
IIN1,2
VDE
VOUT1,2
INPUT1,2
ISENSE1,2
CURRENT
SENSE1,2
VIN1,2
GND
VSENSE1,2
IGND
2.1
Absolute maximum ratings
Applying stress which exceeds the ratings listed in Table 3: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability.
Table 3. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DC supply voltage
28
V
V
CC
V
Transient supply voltage (T < 400 msR
Reverse DC supply voltage
DC output current
> 0.5
41
16
CCPK
load
-V
V
CC
I
Internally limited
70
A
OUT
-I
Reverse DC output current
DC input current
A
OUT
I
-1 to 10
-1 to 10
mA
mA
IN
I
DC diagnostic enable input current
DE
V
- 41
V
V
CC
V
Current sense maximum voltage (V > 0 V)
CSENSE
CC
+V
CC
Maximum switching energy (single pulse)
E
600
mJ
(L = 0.3 mH; R = 0 ; V = 13.5 V; T = 150 °C;
jstart
MAX
L
bat
I
= I (Typ.))
OUT
limL
Electrostatic discharge
V
V
2000
750
V
V
ESD
(Human Body Model: R = 1.5 k C = 100 pF)
Charge device model (CDM-AEC-Q100-011)
ESD
8/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
Table 3. Absolute maximum ratings (continued)
Parameter
Junction operating temperature
Storage temperature
Symbol
Value
Unit
T
-40 to 150
-55 to 150
°C
°C
j
T
STG
2.2
Thermal data
Table 4. Thermal data
Parameter
Maximum value
MultiPowerSO-30 12x12 PLLP
Symbol
Unit
Thermal resistance junction-case (with one
channel ON)
R
0.35
0.35
°C/W
°C/W
thj-case
(1)
(2)
R
Thermal resistance junction-ambient
58
39
thj-amb
1. PCB FR4 area 58 mm x 58 mm, PCB thickness 2 mm, Cu thickness 35 µm, minimum pad layout
2. PCB FR4 area 78 mm x 78 mm, PCB thickness 2 mm, Cu thickness 35 µm, minimum pad layout
2.3
Electrical characteristics
Values specified in this section are for 8 V < V < 24 V, -40 °C < T < 150 °C, unless
CC
j
otherwise stated.
Table 5. Power section
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
V
Operating supply voltage
Undervoltage shutdown
4.5
13
28
V
V
CC
V
3.5
4.5
USD
Undervoltage shutdown
hysteresis
V
0.5
3
V
USDhyst
I
I
I
= 15 A; T = 25 °C
m
m
m
OUT
OUT
OUT
j
(1)
R
On-state resistance
= 15 A; T = 150 °C
6
6
ON
j
= 15 A; V = 5 V; T = 25 °C
CC
j
R
in reverse battery
V
= -13 V; I
= -15 A;
DSon
CC
OUT
R
3
m
ON REV
condition
T = 25 °C
j
V
V
clamp voltage
I
= 20 mA; I
= 0 A
41
46
52
5
V
clamp
CC
CC
OUT1,2
Standby V = 0 V; V = 13 V;
T = 25 °C; V = 0;
DE
CC
2
µA
j
IN
V
= V
= 0 V
OUT
SENSE
Off-state; V = 13 V; V = 5 V;
CC
DE
I
Supply current
S
T = 25 °C;
10
15
6
µA
j
V
= V
= V = 0 V
SENSE
IN
OUT
On-state; V = 13 V; V = 5 V;
CC
DE
3.5
mA
V
= 5 V; I
= 0 A
IN
OUT
DocID17359 Rev 5
9/43
42
Electrical specifications
Symbol
VND5E004A-E, VND5E004ASP30-E
Table 5. Power section (continued)
Test conditions
Parameter
Min. Typ. Max. Unit
V
V
= 0 V or V = 0 V; V
= 0 V;
IN
DE
OUT
0
0
0.01
3
5
µA
µA
= 13 V; T = 25 °C
CC
j
(1)
I
Off-state output current
L(off)
V
V
= 0 V or V = 0 V; V
DE
= 0 V;
IN
OUT
= 13 V; T = 125 °C
CC
j
1. For each channel
Table 6. Switching (V = 13 V; T = 25 °C)
CC
j
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
t
Turn-on delay time
Turn-off delay time
R = 0.87 (see Table 6)
—
—
25
35
—
—
µs
µs
d(on)
L
t
R = 0.87 (see Table 6)
d(off)
L
See
Figure 26
(dV
(dV
/dt)
Turn-on voltage slope R = 0.87
—
—
—
—
—
—
—
—
Vµs
Vµs
mJ
OUT
on
off
L
See
Figure 28
/dt)
Turn-off voltage slope R = 0.87
OUT
L
Switching energy
W
R = 0.87 (see Table 6)
5.4
2.3
ON
L
losses during t
won
Switching energy
losses during t
W
R = 0.87 (see Table 6)
mJ
OFF
L
woff
Table 7. Logic inputs
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
0.9
V
µA
V
IL1,2
I
V
V
= 0.9 V
= 2.1 V
1
IL1,2
IN
IN
V
2.1
IH1,2
IH1,2
I
10
7
µA
V
V
0.25
5.5
I(hyst)1,2
I
I
= 1 mA
V
IN
V
Input clamp voltage
ICL1,2
= -1 mA
-0.7
V
IN
V
DE low level voltage
DE low level current
DE high level voltage
DE high level current
DE hysteresis voltage
0.9
V
DEL
I
V
V
= 0.9 V
= 2.1 V
1
µA
V
DEL
IN
IN
V
2.1
DEH
DEH
I
10
7
µA
V
V
0.25
5.5
DE(hyst)
I
I
= 1 mA
V
DE
V
DE clamp voltage
DECL
= -1 mA
-0.7
V
DE
10/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
(1)
Table 8. Protections and diagnostics
Symbol
Parameter
Test conditions
= 13 V
Min.
Typ.
Max.
Unit
V
65
90
130
130
A
A
CC
I
Short circuit current
limH
5 V < V < 24 V
CC
Shortcircuitcurrent
during thermal
cycling
I
V
= 13 V; T < T < T
TSD
40
A
limL
CC
R
j
Shutdown
temperature
T
150
175
200
°C
°C
°C
TSD
T
Reset temperature
T
+1
T
+5
R
RS
RS
Thermal reset of
STATUS
T
135
RS
Thermal hysteresis
T
7
°C
V
HYST
(T
-T )
TSD
R
Turn-off output
voltage clamp
V
I
I
= 2 A; V = 0; L = 6 mH
V
-28 V -32 V -35
DEMAG
OUT
IN
CC CC CC
= 1 A;
OUT
Output voltage drop
limitation
V
T = -40 °C to 150 °C
(see Figure 8)
25
mV
ON
j
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Table 9. Current sense (8 V < V < 18 V)
CC
Symbol
Parameter
Test conditions
= 5 A; V = 4 V; V = 5 V;
Min.
Typ. Max. Unit
I
OUT
SENSE
DE
T = -40 °C...150 °C
K
I
I
/I
11420 17580 23740
—
j
0
OUT SENSE
T = 25 °C...150 °C
12130 17580 23030
j
I
= 10 A; V
= 4 V; V = 5 V;
OUT
SENSE
DE
T = -40 °C...150 °C
K
/I
11830 16910 21990
12680 16910 21140
—
%
—
%
—
%
j
1
OUT SENSE
T = 25 °C...150 °C
j
Current sense ratio I
drift
=10 A; V
T = -40 °C to 150 °C
= 4 V; V = 5 V;
(1)
OUT
SENSE
DE
dK /K
-14
14
1
1
2
3
j
I
= 15 A; V
= 4 V; V = 5 V;
OUT
SENSE
DE
T = -40 °C...150 °C
K
I
/I
OUT SENSE
11760 16110 20460
13040 16110 19180
j
2
T = 25 °C...150 °C
j
Current sense ratio I
= 15 A; V
= 4 V;
(1)
(1)
OUT
DE
SENSE
dK /K
-10
10
2
drift
V
= 5 V; T = -40 °C to 150 °C
j
I
= 30 A; V
= 4 V; V = 5 V;
OUT
SENSE
DE
T = -40 °C...150 °C
K
I
/I
13040 15520 18000
13810 15520 17230
j
3
OUT SENSE
T = 25 °C...150 °C
j
Current sense ratio I
= 30 A; V
= 4 V;
OUT
DE
SENSE
dK /K
-5
5
3
drift
V
= 5 V; T = -40 °C to 150 °C
j
DocID17359 Rev 5
11/43
42
Electrical specifications
Symbol
VND5E004A-E, VND5E004ASP30-E
Table 9. Current sense (8 V < V < 18 V) (continued)
CC
Parameter
Test conditions
Min.
Typ. Max. Unit
I
V
= 0 A; V
= 0 V; V = 0 V;
OUT
SENSE DE
0
1
2
1
µA
µA
µA
= 0 V; T = -40 °C...150 °C
IN
j
Analog sense
leakage current
I
V
= 0 A; V
= 0 V; V = 5 V;
OUT
SENSE DE
I
0
0
SENSE0
= 5 V; T = -40 °C...150 °C
IN
j
I
V
= 15 A; V
= 0 V;
OUT
SENSE
= 0 V; V = 5 V;
DE
IN
Open-load on-
state current
detection threshold
V
= 5 V; 8 V < V < 18 V
IN
CC
I
10
5
150 mA
OL
I
I
= 5 µA
SENSE
Max analog sense
output voltage
= 45 A; V
= 0 V;
CSD
OUT
V
V
V
SENSE
R
= 3.9 k
SENSE
Analog sense
V
output voltage in
V
=13 V; R
=13 V; V
= 3.9 k
8
9
SENSEH
SENSEH
CC
SENSE
SENSE
(2)
fault condition
Analog sense
I
output current in
V
= 5 V
mA
CC
(2)
fault condition
V
I
< 4 V, 5 A < I < 30 A;
Delay response
time from rising
edge of DE pin
SENSE
out
= 90 % of I
t
50
100
20
µs
µs
µs
µs
SENSE
SENSE max
DSENSE1H
(see Figure 4)
V
I
< 4 V, 5 A < I < 30 A;
out
Delay response
time from falling
edge of DE pin
SENSE
= 10 % of I
t
t
5
SENSE
SENSE max
DSENSE1L
(see Figure 4)
V
I
< 4 V, 5 A < I < 30 A;
Delay response
time from rising
edge of INPUT pin
SENSE
out
SENSE max
= 90 % of I
200
100
600
250
SENSE
DSENSE2H
V
= 5 V (see Figure 4)
DE
V
I
< 4 V, 5 A < I < 30 A;
Delay response
time from falling
edge of INPUT pin
SENSE
out
= 10 % of I
t
SENSE
SENSE max
DSENSE2L
V
= 5 V (see Figure 4)
DE
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
Table 10. Open-load detection (8 V < V < 18 V; V = 5 V)
CC
DE
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Open-load off-state voltage
detection threshold
V
= 0 V, V = 5 V;
IN
DE
V
2
—
—
4
V
OL
See Figure 5
Output short circuit to V
CC
t
V
= 5 V; See Figure 5
180
1200 µs
DSTKON
DE
detection delay at turn off
V
V
= 0 V; V
= 0 V;
IN
SENSE
Off-state output current at
= 5 V;
I
-120
—
90
µA
DE
L(off2)r
V
= 4 V
OUT
V
rising from 0 V to 4 V
OUT
12/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
Min. Typ. Max. Unit
Table 10. Open-load detection (8 V < V < 18 V; V = 5 V) (continued)
CC
DE
Symbol
Parameter
Test conditions
V
V
= 0 V; V
= 5 V;
= V
;
IN
SENSE
SENSEH
Off-state output current at
= 2 V
I
-50
—
—
—
90
20
20
µA
µs
µs
DE
L(off2)f
V
OUT
V
falling from V to 2 V
OUT
CC
V
V
= 4 V; V = 0 V;
= 5 V;
Delay response from output
td_vol rising edge to V rising
OUT
IN
DE
SENSE
edge in open-load
V
= 90 % of V
SENSEH
SENSE
V
V
= 2 V; V = 0V;
IN
= 5 V;
Delay response from output
OUT
td_voh falling edge to V falling
DE
SENSE
edge in open-load
V
= 10 % of V
SENSEH
SENSE
Figure 4. Current sense delay characteristics
INPUT
DE
LOAD CURRENT
SENSE CURRENT
tDSENSE2H tDSENSE1L
tDSENSE1H
tDSENSE2L
Figure 5. Open-load off-state delay timing
OUTPUT STUCK AT V
CC
V
IN
V
> V
OUT
OL
V
SENSEH
V
CS
t
DSTKON
DocID17359 Rev 5
13/43
42
Electrical specifications
VND5E004A-E, VND5E004ASP30-E
Figure 6. Switching characteristics
V
OUT
t
t
Woff
Won
90%
80%
dV
/dt
dV
/dt
OUT (off)
OUT (on)
10%
t
t
f
r
t
INPUT
t
t
d(on)
d(off)
t
Figure 7. Delay response time between rising edge of output current and rising edge
of current sense (CS enabled)
VIN
tDSENSE2H
t
t
t
IOUT
IOUTMAX
90% IOUTMAX
ISENSE
ISENSEMAX
90% ISENSEMAX
14/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
Figure 8. Output voltage drop limitation
- V
V
CC
OUT
Tj = 150 °C
Tj = 25 °C
Tj = -40 °C
Von
I
OUT
Von/Ron(T)
Figure 9. I
/I
vs I
OUT SENSE
OUT
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Legend:
A: Max, T = -40 °C to 150 °C
D: Min, T = 25 °C to 150 °C
j
j
B: Max, T = 25 °C to 150 °C
E: Min, T = -40 °C to 150 °C
j
j
C: Typical, T = -40 °C to 150 °C
j
DocID17359 Rev 5
15/43
42
Electrical specifications
VND5E004A-E, VND5E004ASP30-E
Figure 10. Maximum current sense ratio drift vs load current
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1. Parameter guaranteed by design; it is not tested.
Table 11. Truth table
Sense
Conditions
Enable
Input
Output
(VDE=5V)(1)
H
H
L
H
L
H
0
Normal operation
Nominal
H
H
L
H
L
L
0
Overtemperature
Undervoltage
Overload
V
SENSEH
H
H
L
H
L
L
0
0
H
H
H
H
X (no power limitation)
Cycling (power limitation)
Nominal
V
SENSEH
Short circuit to GND (power
limitation)
H
H
L
H
L
L
0
V
V
V
SENSEH
Open-load off-state
(with external pull up)
H
L
H
SENSEH
Short circuit to V (external
H
H
L
H
H
H
CC
SENSEH
< Nominal
pull up disconnected)
Negative output voltage
clamp
H
L
L
0
1. If the VDE is low, the SENSE output is at a high impedance; its potential depends on leakage currents and
external circuit.
16/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
Table 12. Electrical transient requirements (part 1/3)
ISO 7637-2:
2004(E)
Test levels(1)
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
impedance
III
IV
Test pulse
5000
pulses
1
-75 V
-100 V
0.5 s
5 s
5 s
2 ms, 10
50 µs, 2
5000
pulses
2a
+37 V
+50 V
0.2 s
3a
3b
-100 V
+75 V
-150 V
+100 V
1h
1h
90 ms
90 ms
100 ms
100 ms
0.1 µs, 50
0.1 µs, 50
100 ms, 0.01
4
-6 V
-7 V
1 pulse
1 pulse
(2)
5b
+65 V
+87 V
400 ms, 2
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground. The protection strategy
allows PowerMOS to be cyclically switched on during load dump, so distributing the load dump energy
along the time and to transfer a part of it to the load.
Table 13. Electrical transient requirements (part 2/3)
ISO 7637-2:
2004(E)
Test level results(1)
III
IV
Test pulse
1
C
C
C
C
C
C
C
C
C
C
C
C
2a
3a
3b
4
(2) (3)
5b
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b
2. Valid in case of external load dump clamp: 40V maximum referred to ground. The protection strategy
allows PowerMOS to be cyclically switched on during load dump, so distributing the load dump energy
along the time and to transfer a part of it to the load.
3. Suppressed load dump (pulse 5b) is withstood with a minimum load connected as specified in Table 3.
Table 14. Electrical transient requirements (part 3/3)
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure
to disturbance and cannot be returned to proper operation without replacing the
device.
E
DocID17359 Rev 5
17/43
42
Electrical specifications
VND5E004A-E, VND5E004ASP30-E
2.4
Waveforms
Figure 11. Normal operation
INPUT
IOUT
Nominal load
Nominal load
VSENSE
VDE
Figure 12. Overload or short to GND
INPUT
Power Limitation
ILimH
>
Thermal cycling
ILimL
>
IOUT
VSENSE
VDE
18/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
Figure 13. Intermittent overload
INPUT
Overload
ILimH
>
Nominal load
ILimL
>
IOUT
VSENSEH
>
VSENSE
VDE
Figure 14. Off-state open-load with external circuitry
INPUT
VOUT
VOUT > VOL
VOL
IOUT
VSENSEH
tDSTK (on)
>
VSENSE
VDE
DocID17359 Rev 5
19/43
42
Electrical specifications
VND5E004A-E, VND5E004ASP30-E
Figure 15. Short to V
CC
Resistive
Short to V
Hard
Short to V
CC
CC
INPUT
VOUT
VOUT > VOL
VOL
IOUT
tDSTK (on)
tDSTK (on)
VDE
Figure 16. T evolution in overload or short to GND
J
INPUT
Self-limitation of fast thermal transients
TTSD
TR
THYST
TJ_START
TJ
Power Limitation
ILimH
>
< ILimL
IOUT
20/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
2.5
Electrical characteristics curves
Figure 17. Off-state output current
Figure 18. High level input current
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Figure 20. Input low level voltage
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Figure 21. Input high level voltage
Figure 22. Input hysteresis voltage
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DocID17359 Rev 5
21/43
42
Electrical specifications
VND5E004A-E, VND5E004ASP30-E
Figure 23. On-state resistance vs T
Figure 24. On-state resistance vs V
case
CC
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Figure 26. Turn-on voltage slope
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Figure 28. Turn-off voltage slope
LIMH
case
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22/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Electrical specifications
Figure 29. DE high level voltage
Figure 30. DE clamp voltage
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DocID17359 Rev 5
23/43
42
Application information
VND5E004A-E, VND5E004ASP30-E
3
Application information
Figure 32. Application schematic
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3.1
MCU I/Os protection
When negative transients are present on the V line, the control pins are pulled negative to
CC
approximately -1.5 V.
ST suggests the insertion of resistors (R ) in the lines to prevent the microcontroller I/O
prot
pins from latching up.
The values of these resistors provide a compromise between the leakage current of the
microcontroller, the current required by the HSD I/Os (input levels compatibility) and the
latch-up limit of the microcontroller I/Os.
-V
/I
R
(V
-V ) / I
OHµC IH IHmax
CCpeak latchup
prot
Calculation example:
For V = - 1.5V and I
20mA; V 4.5V
OHµC
CCpeak
latchup
75 R
240k.
prot
Recommended values: R
=10kC
=10nF
EXT
prot
3.2
Load dump protection
D is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
ld
V
maximum rating. The same applies if the device is subject to transients on the V
CCPK
CC
line that are greater than the ones shown in the Table 12.
24/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Application information
3.3
Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostics):
Current mirror of the load current in normal operation, delivering a current
proportional to the load current according to a known ratio K .
X
The current I
can be easily converted to a voltage V
by means of an
SENSE
SENSE
external resistor R
. Linearity between I
and V
is ensured up to 5V
SENSE
OUT
SENSE
minimum (see parameter V
in Table 9: Current sense (8 V < V < 18 V)). The
SENSE
CC
current sense accuracy depends on the output current (refer to current sense electrical
characteristics in Table 9).
Diagnostic flag in fault conditions, delivering a fixed voltage V
up to a
SENSEH
maximum current I
in case of the following fault conditions (refer to
SENSEH
Table 11: Truth table):
–
–
–
–
Power limitation activation
Overtemperature
Short to V in off-state
CC
Open-load in off-state with additional external components.
A logic level low on the DE pin simultaneously sets all the current sense pins of the device in
a high impedance state, thus disabling the current monitoring and diagnostic detection. This
feature allows multiplexing of the microcontroller analog inputs by sharing the sense
resistance and ADC line among different devices.
Figure 33. Current sense and diagnostics
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DocID17359 Rev 5
25/43
42
Application information
VND5E004A-E, VND5E004ASP30-E
3.3.1
Short to V and off-state open-load detection
CC
Short to VCC
A short circuit between V and output is indicated by the relevant current sense pin set to
CC
V
during the device off-state. Little or no current is delivered by the current sense
SENSEH
during the on-state depending on the nature of the short circuit.
Off-state open-load with external circuitry
Detection of an open-load in off mode requires an external pull-up resistor (R ) connecting
PU
the output to a positive supply voltage (V ).
PU
It is preferable that V be switched off during the module standby mode to avoid an
PU
increase in the overall standby current consumption in normal conditions, that is, when the
load is connected.
An external pull down resistor (R ) connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostics).
R
must be selected in order to ensure V
< V
unless pulled up by the external
OLmin
PD
OUT
circuitry:
V
= R
I
V
= 2V
OLmin
OUT
PD L(off2)f
Pull-up_OFF
R
22Kis recommended.
PD
For proper open-load detection in off-state, the external pull-up resistor must be selected
according to the following formula:
R
V
– R
R I
PD L(off2)r
PD
PU
PU
V
= ------------------------------------------------------------------------------------- = V
= 4V
OLmax
OUT
R
+ R
Pull-up_ON
PU
PD
For the values of V
,V
, I
and I
see Table 10: Open-load detection
OLmin OLmax L(off2)r
L(off2)f
(8 V < V < 18 V; V = 5 V).
CC
DE
26/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Application information
3.4
Maximum demagnetization energy (VCC = 13.5 V)
Figure 34. Maximum turn-off current versus inductance
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In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves A and B.
DocID17359 Rev 5
27/43
42
Package and PC board thermal data
VND5E004A-E, VND5E004ASP30-E
4
Package and PC board thermal data
4.1
MultiPowerSO-30 thermal data
Figure 35. MultiPowerSO-30 PC board
1. Layout condition of Rth and Zth measurements (PCB: double layer, thermal vias, FR4
area = 58 mm x 58 mm, PCB thickness = 2 mm, Cu thickness = 70 µm (front and back side), copper
areas: from minimum pad layout to 16 cm2).
Figure 36.
R
vs PCB copper area in open box free air condition (one channel ON)
thj-amb
RTHj_amb(°C/W)
60
55
50
45
40
35
0
1
2
3
4
5
PCB Cu heatsink area (cm^2)
28/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Package and PC board thermal data
Figure 37. MultiPowerSO-30 thermal impedance junction ambient single pulse (one
channel ON)
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Figure 38. Thermal fitting model of a double channel HSD in MultiPowerSO-30
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protection functions (power limitation or thermal cycling during thermal shutdown) are not triggered.
Equation 1: Pulse calculation formula
Z
= R
+ Z
1 –
TH
TH
= t T
THtp
where
p
DocID17359 Rev 5
29/43
42
Package and PC board thermal data
VND5E004A-E, VND5E004ASP30-E
Table 15. Thermal parameters for MultiPowerSO-30
Area/island (cm2)
Footprint
4
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
R7 (°C/W)
R8 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
C7 (W.s/°C)
C8 (W.s/°C)
0.05
0.3
0.5
1.3
14
44.7
0.05
0.3
23.7
0.005
0.008
0.01
0.3
0.6
5
11
0.005
0.008
30/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Package and PC board thermal data
4.2
PQFN - 12x12 power lead-less thermal data
Figure 39. 12x12 Power lead-less package PC board
1. Layout condition of Rth and Zth measurements (PCB: double layer, thermal vias, FR4
area = 77 mm x 86 mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back side), copper
areas: minimum pad layout).
Figure 40. R
vs PCB copper area in open box free air condition (one channel
ON)
thj-amb
50
45
40
35
30
25
20
0
5
10
15
20
PCB Cu heatsink area (cm^ 2)
DocID17359 Rev 5
31/43
42
Package and PC board thermal data
VND5E004A-E, VND5E004ASP30-E
Figure 41. PQFN - 12x12 power lead-less package thermal impedance junction
ambient single pulse (one channel ON)
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Figure 42. Thermal fitting model of a double channel HSD in PQFN - 12x12 power lead-less
1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protection functions (power limitation or thermal cycling during thermal shutdown) are not triggered.
Equation 2: pulse calculation formula
Z
= R
+ Z
1 –
TH
TH
= t T
THtp
where
p
32/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Package and PC board thermal data
Table 16. Thermal parameters for PQFN - 12x12 power lead-less
Area/island (cm2)
Footprint
4
8
16
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
R7 (°C/W)
R8 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
C7 (W.s/°C)
C8 (W.s/°C)
0.35
0.15
4.2
9.6
9.4
10.5
12
9.2
8.5
9
9
5.5
6
15.1
16.7
0.35
0.15
0.018
0.015
0.2
1.9
2.2
7.3
22
2.32
13.7
25
2.45
20
2.45
11.85
0.018
0.015
30
DocID17359 Rev 5
33/43
42
Package information
VND5E004A-E, VND5E004ASP30-E
5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
5.1
MultiPowerSO-30 package information
Figure 43. MultiPowerSO-30 package outline
Table 17. MultiPowerSO-30 mechanical data
Millimeters
Symbol
Min.
Typ.
Max.
A
A2
A3
B
2.35
2.25
0.1
1.85
0
0.42
0.23
17.1
0.58
0.32
17.3
C
D
17.2
34/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Package information
Table 17. MultiPowerSO-30 mechanical data (continued)
Millimeters
Typ.
Symbol
Min.
Max.
E
E1
“e”
F6
F7
F8
L
18.85
15.9
1
19.15
16.1
16
14.3
5.45
0.73
0.8
1.15
10 Deg
7 Deg
N
S
0 Deg
DocID17359 Rev 5
35/43
42
Package information
VND5E004A-E, VND5E004ASP30-E
5.2
PQFN - 12x12 power lead-less package information
Figure 44. PQFN - 12x12 power lead-less package outline
36/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Package information
Table 18. PQFN - 12x12 power lead-less mechanical data
Millimeters
Typ.
Symbol
Min.
2
Max.
2.2
A
A1
b
0
0.05
0.47
0.35
C
0.50
D
11.90
4.65
10.45
4.80
4.80
11.90
2.15
5.15
1.70
12.10
4.95
10.65
5
Dh1
Dh2
Dh3
Dh4
E
5
12.10
2.45
5.45
2
Eh1
Eh2
Eh3
e1
e2
e3
f
0.90
3.45
1.10
0.50
0.60
f1
L
0.75
1.65
0.95
1.90
L1
L2
M
0.76
0.78
11.10
11.10
11.30
11.30
N
v
0.1
0.05
0.05
0.1
w
y
y1
DocID17359 Rev 5
37/43
42
Package information
VND5E004A-E, VND5E004ASP30-E
5.3
MultiPowerSO-30 packing information
The devices are packed in tape and reel shipments (see Table 19: Device summary on
page 41).
Figure 45. MultiPowerSO-30 tape and reel shipment (suffix “TR”)
Reel dimension
Dimension
mm
1000
Base Q.ty
Bulk Q.ty
A (max)
B (min)
1000
330
1.5
C (± 0.2)
D (min)
13
20.2
32
G (+ 2 / -0)
N (min)
100
38.4
T (max)
Tape dimensions
According to Electronic Industries Association (EIA)
Standard 481 rev. A, Feb 1986
Description
Dimension
mm
Tape width
W
32
4
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
P0 (± 0.1)
P
24
1.5
2
D (± 0.1/-0)
D1 (min)
F (± 0.1)
K (max)
P1 (± 0.1)
14.2
2.2
2
Compartment Depth
Hole Spacing
End
Start
Top
cover
tape
No components
500 mm min
Components
No components
500 mm min
Empty components pockets
User direction of feed
38/43
DocID17359 Rev 5
VND5E004A-E, VND5E004ASP30-E
Package information
5.4
PQFN - 12x12 power lead-less packing information
The devices can be packed in tray or tape and reel shipments (see Table 19: Device
summary).
Figure 46. PQFN - 12x12 power lead-less tray shipment (no suffix)
Tray information
Parameter
Base Q.ty
Bulk Q.ty
189
945
DocID17359 Rev 5
39/43
42
Package information
VND5E004A-E, VND5E004ASP30-E
Figure 47. PQFN - 12x12 power lead-less tape and reel shipment (suffix “TR”)
Tape dimensions
Dimension
mm
A0 ± 0.1
B0 ± 0.1
K0 ± 0.1
F ± 0.1
E ± 0.1
W ± 0.3
P2 ± 0.1
P0 ± 0.1
P1 ± 0.1
T ± 0.05
D
12.30
12.30
2.15
11.50
1.75
24
2
4
16
0.30
1.50
1.50
D1 (min)
Reel dimensions
Dimension
mm
Base Q.ty
Bulk Q.ty
A (max)
B (min)
1500
1500
330
1.5
C (± 0.2)
D (min)
13
20.2
32
G (+ 2 / -0)
N (min)
100
38.4
T (max)
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Order codes
6
Order codes
Table 19. Device summary
Order codes
Package
Tape and reel
VND5E004ATR-E
VND5E004A30TR-E
Tray
VND5E004A-E
PQFN-12x12 power lead-less
MultiPowerSO-30
—
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Revision history
VND5E004A-E, VND5E004ASP30-E
7
Revision history
Table 20. Document revision history
Changes
Date
Revision
20-Jul-2010
1
Initial release.
Updated Figure 1: Block diagram and Figure 10: Maximum current
sense ratio drift vs load current
07-Nov-2012
19-Sep-2013
2
3
Updated Disclaimer.
Updated footnote 2 into the Table 12: Electrical transient
requirements (part 1/3) and Table 13: Electrical transient
requirements (part 2/3).
25-Oct-2013
4
– Removed all information relative to tube packing of the product
– Modified Section 5: Package information.
11-Jan-2017
5
– Added AEC-Q100 qualified in the Features section
– Minor text edits throughout the document
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improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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© 2017 STMicroelectronics – All rights reserved
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