W28NK60Z [STMICROELECTRONICS]

N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET; N沟道600 V - 0.155з - 27A TO- 247齐纳保护超网MOSFET


型号：	W28NK60Z
厂家：	ST
描述：	N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET N沟道600 V - 0.155з - 27A TO- 247齐纳保护超网MOSFET
文件：	总10页 (文件大小：213K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STW28NK60Z

N-CHANNEL 600 V - 0.155Ω - 27A TO-247

Zener-Protected SuperMESH™ MOSFET

Table 1: General Features

Figure 1: Package

TYPE

DSS

DS(on)

STW28NK60Z

600 V < 0.185 Ω 27 A 350 W

■ TYPICAL R (on) = 0.155 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

REPEATIBILITY

TO-247

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt capability

for the most demanding application. Such series

complements ST full range of high vltage MOS-

FETs including revolutionary MSmesh™ products.

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES

■ WELDING MACHINES

■ LIGHTING

Table 2: Order Codes

PART NUMBER

MARKING

PACKAGE

PACKAGING

STW28NK60Z

W28NK60Z

TO-247

TUBE

Rev. 1

November 2004

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STW28NK60Z

Table 3: Absolute Maximum ratings

Symbol

Parameter

Value

600

± 30

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 KΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(*)

Drain Current (pulsed)

108

350

2.77

6000

4.5

Total Dissipation at T = 25°C

TOT

Derating Factor

W/°C

Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)

Peak Diode Recovery voltage slope

ESD(G-S)

dv/dt (1)

V/ns

Storage Temperature

Operating Junction Temperature

stg

-55 to 150

°C

(*) Pulse width limited by safe operating area

(1) I ≤ 27 A, di/dt≤ 200 A/µs, VDD≤ V

, T ≤ T

(BR)DSS J JMAX

Table 4: Thermal Data

Rthj-case

Thermal Resistance Junction-case Max

0.36

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

300

°C/W

°C

Table 5: Avalanche Characteristics

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T max)

Single Pulse Avalanche Energy

500

(starting T = 25 °C, I = I , V = 50 V)

Table 6: Gate-Source Zener Diode

Symbol

Parameter

Test Condition

Igs= ± 1mA (Open Drain)

Min.

Typ.

Max

Unit

Gate-Source Breakdown

Voltage

GSO

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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STW28NK60Z

TABLE 7: ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

On /Off

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source Breakdown

Voltage

= 1 mA, V = 0

600

(BR)DSS

Zero Gate Voltage

= Max Rating

= Max Rating, T = 125°C

µA

DSS

Drain Current (V = 0)

Gate-body Leakage

= ± 20 V

± 10

µA

GSS

Current (V = 0)

= V , I = 150 µA

4.5

Gate Threshold Voltage

3.75

GS(th)

Static Drain-source On

Resistance

= 10 V, I = 13.5 A

0.155

0.185

Ω

DS(on

Table 8: Dynamic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

= 15 V, I = 13.5 A

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25 V, f = 1 MHz, V = 0

6350

615

125

iss

oss

rss

Turn-on Delay Time

Rise Time

Turn-off-Delay Time

= 300 V, I = 14 A,

= 4.7 Ω, V = 10 V

135

d(on)

(Resistive Load see Figure 17))

d(off)

Fall Time

= 480 V, I = 28 A,

= 10 V

264

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

189

103

Table 9: Source Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

108

Source-drain Current

Source-drain Current (pulsed)

(2)

SDM

(1)

= 27 A, V

= 0

Forward On Voltage

1.6

= 28 A, di/dt = 100 A/µs

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

820

23.5

µC

= 35V, T = 25°C

(see test circuit Figure 5)

RRM

= 28 A, di/dt = 100 A/µs

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

1020

27.5

µC

= 35V, T = 150°C

(see test circuit Figure 5)

RRM

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

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STW28NK60Z

Figure 3: Safe Operating Area

Figure 6: Thermal Impedance

Figure 4: Output Characteristics

Figure 7: Transfer Characteristics

Figure 5: Transconductance

Figure 8: Static Drain-source On Resistance

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Figure 9: Gate Charge vs Gate-source Voltage

Figure 12: Capacitance Variations

Figure 10: Normalized Gate Thereshold Volt-

age vs Temperature

Figure 13: Normalized On Resistance vs Tem-

perature

Figure 11: Source-Drain Diode Forward Char-

acteristics

Figure 14: Normalized BV

vs Temperature

DSS

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Figure 15: Maximum Avalanche Energy vs

Temperature

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STW28NK60Z

Figure 16: Unclamped Inductive Load Test Cir-

cuit

Figure 19: Unclamped Inductive Wafeform

Figure 17: Switching Times Test Circuit For

Resistive Load

Figure 20: Gate Charge Test Circuit

Figure 18: Test Circuit For Inductive Load

Switching and Diode Recovery Times

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STW28NK60Z

TO-247 MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

4.85

2.20

1.0

TYP

MAX.

5.15

MIN.

0.19

MAX.

0.20

2.60

0.086

0.039

0.079

0.118

0.015

0.781

0.608

0.102

0.055

0.094

0.134

0.03

1.40

2.0

2.40

3.0

3.40

0.40

19.85

15.45

0.80

20.15

15.75

0.793

0.620

5.45

18.50

5.50

0.214

0.728

0.216

14.20

3.70

14.80

4.30

0.560

0.14

0.582

0.17

øP

øR

3.55

4.50

3.65

5.50

0.140

0.177

0.143

0.216

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Table 10: Revision History

Date

Revision

Description of Changes

05-Nov-2004

First Release.

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STW28NK60Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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