X0203BA [STMICROELECTRONICS]
1.25A, 200V, SCR, TO-92;
| 型号： | X0203BA |
| 厂家： | 
ST |
| 描述： | 1.25A, 200V, SCR, TO-92 栅 栅极 |
| 文件： | 总5页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
X02xxxA
SENSITIVE GATE SCR
FEATURES
IT(RMS) = 1.25A
VDRM = 200V to 800V
Low IGT < 200 µA
K
G
A
DESCRIPTION
The X02xxxA series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
Tl= 60°C
Tl= 60°C
1.25
A
(180° conductionangle)
IT(AV)
ITSM
Mean on-state current
(180° conductionangle)
0.8
A
A
Non repetitive surge peak on-state current
(T initial = 25°C )
j
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
25
22.5
2.5
30
I2t
A2s
I2t Value for fusing
Critical rate of rise of on-state current
dI/dt
A/µs
IG = 10 mA
diG /dt = 0.1 A/µs.
Storage and operating junction temperature range
Tstg
Tj
- 40, + 150
- 40, + 125
°C
°C
Maximum lead temperature for soldering during 10s at
2mm from case
Tl
260
Voltage
Symbol
Parameter
Unit
B
D
M
N
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1KΩ
200
400
600
800
V
January 1995
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X02xxxA
THERMAL RESISTANCES
Symbol
Parameter
Value
150
60
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to leads for DC
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs)
IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Symbol
Test Conditions
Unit
02
03
20
05
20
50
IGT
VD=12V (DC) RL=140Ω
Tj= 25°C
MIN
µA
MAX
200
200
0.8
0.1
VGT
VGD
VD=12V (DC) RL=140Ω
Tj= 25°C MAX
Tj= 125°C MIN
V
V
VD=VDRM RL=3.3kΩ
RGK = 1 KΩ
VRGM
tgd
IRG =10µA
Tj= 25°C
MIN
8
V
VD=VDRM ITM= 3 x IT(AV
)
Tj= 25°C TYP
0.5
µs
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 KΩ
IG=1mA RGK = 1 KΩ
IH
IL
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 110°C MAX
Tj= 110°C TYP
Tj= 110°C MAX
5
6
mA
mA
V
ITM= 2.5A tp= 380µs
VTM
1.45
5
IDRM
IRRM
VD = VDRM RGK = 1 KΩ
VR = VRRM
µA
µA
V/µs
µs
200
20
dV/dt
tq
VD=67%VDRM RGK = 1 KΩ
15
15
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
100
VD= 67%VDRM RGK = 1 KΩ
ORDERING INFORMATION
X 02 03 M A
PACKAGE :
A = TO92
SCR TOP GLASS
CURRENT
VOLTAGE
SENSITIVITY
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X02xxxA
Fig.1 : Maximum average power dissipation ver-
sus averageon-state current.
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
P (W)
1.2
Tlead (oC)
-50
P (W)
1.2
O
360
Rth(j-l)
1.0
0.8
0.6
0.4
0.2
0.0
1.0
DC
-70
-90
= 180o
= 120o
= 90o
0.8
0.6
0.4
0.2
0.0
Rth(j-a)
= 60o
-110
=
30o
I
(A)
T(AV)
Tamb (oC)
40
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0
20
60
80
100 120 140
Fig.3 : Average on-state current versus lead tem-
perature.
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
I
(A)
T(AV)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DC
0.10
= 180o
Tlead (oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
tp(s)
1E+2 5E+2
0.01
1E-3
0
1E-2
1E-1
1E+0
1E+1
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
25
20
15
10
5
Tj initial = 25oC
10.0
9.0
8.0
7.0
6.0
5.0
4.0
Igt
3.0
2.0
Ih
1.0
0.0
Number of cycles
10
Tj(oC)
0
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
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X02xxxA
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
100
10
1
100
10
1
Tj initial = 25oC
Tj initial
25oC
I
TSM
Tj max
Tj max
Vto =1.05V
Rt =0.150
2
I
t
V
(V)
tp(ms)
TM
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
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X02xxxA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min.
REF.
A
Max.
a
A
B
C
D
E
F
a
1.35
0.053
4.7
4.8
0.185
B
C
2.54
0.100
4.4
0.173 0.189
0.500
F
D
E
12.7
3.7
0.146
0.017
0.45
Marking : Type number
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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