X0205NA [STMICROELECTRONICS]
1.25A SCRs; 1.25A可控硅型号: | X0205NA |
厂家: | ST |
描述: | 1.25A SCRs |
文件: | 总6页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
X02 Series
®
SENSITIVE
1.25A SCRs
MAIN FEATURES:
Symbol
A
Value
1.25
Unit
A
G
I
T(RMS)
K
V
/V
600 and 800
50 to 200
V
DRM RRM
I
µA
GT
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X02 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
TO-92
(X02xxA)
SOT-223
(X02xxN)
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(180° conduction angle)
TO-92
SOT-223
TO-92
TI = 55°C
T(RMS)
1.25
0.8
A
Ttab = 95°C
TI = 55°C
IT
Average on-state current
(180° conduction angle)
(AV)
A
A
SOT-223
tp = 8.3 ms
tp = 10 ms
Ttab = 95°C
I
Non repetitive surge peak on-state
current
25
TSM
Tj = 25°C
22.5
²
²
2
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
2.5
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
1.2
0.2
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
Tj
September 2000 - Ed: 3
1/6
X02 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
X02xx
Symbol
Test Conditions
Unit
02
05
I
MIN.
MAX.
MAX.
MIN.
-
20
GT
µA
200
50
V
= 12 V
R = 140 Ω
D
L
V
0.8
0.1
8
V
V
V
GT
V
Tj = 125°C
V
I
= V
R = 3.3 kΩ
R = 1 kΩ
GK
GD
D
DRM
L
V
MIN.
= 10 µA
RG
RG
I = 50 mA
R
= 1 kΩ
MAX.
MAX.
5
6
mA
mA
V/µs
V
I
T
GK
H
I
I
= 1 mA
R
= 1 kΩ
G
GK
L
dV/dt
V
I
= 67 % V
R
= 1 kΩ
Tj = 110°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MAX.
MAX.
10
15
D
DRM
GK
V
= 2.5 A tp = 380 µs
1.45
0.9
200
5
TM
TM
V
Threshold voltage
V
to
R
Dynamic resistance
mΩ
d
I
I
DRM
RRM
V
= V
RRM
R
= 1 kΩ
GK
µA
DRM
500
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°C/W
R
R
Junction to leads (DC)
Junction to tab (DC)
Junction to ambient (DC)
TO-92
60
25
th(j-l)
th(j-t)
th(j-a)
SOT-223
TO-92
R
150
60
²
SOT-223
S = 5 cm
S = Copper surface under tab
PRODUCT SELECTOR
Voltage
Part Number
Sensitivity
Package
600 V
800 V
X0202MA
X0202MN
X0202NA
X0202NN
X0205MA
X0205MN
X0205NA
X0205NN
X
200 µA
200 µA
200 µA
200 µA
50 µA
TO-92
SOT-223
TO-92
X
X
X
SOT-223
TO-92
X
X
50 µA
SOT-223
TO-92
X
X
50 µA
50 µA
SOT-223
2/6
X02 Series
ORDERING INFORMATION
Blank
X 02 02 M A
1BA2
SENSITIVE
SCR
SERIES
PACKING MODE:
1BA2:TO-92 Bulk
2BL2:TO-92 Ammopack
VOLTAGE:
M: 600V
N: 800V
PACKAGE:
A:TO-92
CURRENT: 1.25A
5BA4: SOT-223 Tape & Reel
SENSITIVITY:
N: SOT-223
02: 200µA
05: 50µA
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
X02xxyA 1BA2
X02xxyA 2BL2
X0202yN 5BA4
X0205yN 5BA4
X02xxyA
X02xxyA
0.2 g
0.2 g
2500
2000
1000
1000
Bulk
Ammopack
Tape & reel
Tape & reel
X2y
X5y
0.12 g
0.12 g
Note: xx = sensitivity, y = voltage
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus lead temperature (SOT-223/TO-92).
P(W)
IT(av)(A)
1.2
1.4
SOT-223
1.2
1.0
0.8
0.6
0.4
TO-92
1.0
SOT-223
0.8
0.6
TO-92
0.4
0.2
0.2
IT(av)(A)
0.2 0.3 0.4 0.5 0.6 0.7
Tlead or Tlab(°C)
0.0
0.0 0.1
0.0
0
25
50
75
100
125
0.8 0.9
3/6
X02 Series
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
K = [Zth(j-a)/Rth(j-a)]
IT(av)(A)
1.4
1.00
1.2
SOT-223
TO-92
1.0
SOT-223
0.8
SOT-223
0.10
TO-92
0.6
0.4
TO-92
0.2
Tamb(°C)
tp(s)
1E+0
0.0
0.01
1E-2
0
25
50
75
100
125
1E-1
1E+1
1E+2 5E+2
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1 kΩ]
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
4.0
Tj = 25°C
1.50
3.5
3.0
2.5
2.0
1.5
1.0
1.25
1.00
0.75
0.50
0.25
0.00
Ω
Tj(°C)
0.5
Rgk(kΩ)
0.0
-40 -20
0
20
40 60
80 100 120 140
1E-2
1E-1
1E+0
1E+1
Fig. 6: Relative variation of dV/dt immunity
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1kΩ]
dV/dt[Rgk]/dV/dt [
Rgk=1kΩ]
10.0
20
Tj = 125°C
VD = 0.67xVDRM
18
16
14
12
10
8
1.0
6
4
2
0
Cgk(nF)
Rgk(kΩ)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
2
4
6
8
10 12 14 16 18 20 22
4/6
X02 Series
Fig. 8: Surge peak on-state current versus
Fig. 9: Non-repetitive surge peak on-state
number of cycles.
current for
a
sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A), I2t(A2S)
ITSM(A)
25
300
100
20
tp=10ms
Onecycle
Nonrepetitive
Tjinitial=25°C
15
10
5
Number of cycles
10
Repetitive
Tamb=25°C
tp(ms)
0
1
0.01
1
10
100
1000
0.10
1.00
10.00
Fig. 10: On-state characteristics (maximum
values).
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(SOT-223).
ITM(A)
Rth(j-a) (°C/W)
3E+1
130
120
110
100
90
80
70
60
1E+1
1E+0
50
40
30
20
VTM(V)
10
0
S(cm2)
1E-1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.5
1.0 1.5
2.0 2.5
3.0
3.5
4.0
4.5
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
A
Min.
Typ. Max. Min. Typ. Max.
a
A
B
C
D
E
F
a
1.35
2.54
0.053
0.100
B
C
4.70
0.185
4.40
0.173
0.500
12.70
F
D
E
3.70
0.50
0.146
0.019
5/6
X02 Series
PACKAGE MECHANICAL DATA
SOT-223 (Plastic)
DIMENSIONS
A
c
REF.
Millimeters
Inches
V
A1
Min. Typ. Max. Min. Typ. Max.
B
A
A1
B
1.80
0.071
0.004
e1
D
0.02
0.60
2.90
0.24
6.30
0.1 0.0008
0.70 0.85 0.024 0.027 0.034
3.00 3.15 0.114 0.118 0.124
0.26 0.35 0.009 0.010 0.014
6.50 6.70 0.248 0.256 0.264
B1
B1
c
D
H
e
2.3
4.6
0.090
0.181
E
e1
E
3.30
6.70
3.50 3.70 0.130 0.138 0.146
7.00 7.30 0.264 0.276 0.287
10° max
H
e
V
FOOTPRINT DIMENSIONS (in millimeters)
SOT-223 (Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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