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X0405MF-1AA2 [STMICROELECTRONICS]

4A SCRS; 4A可控硅
X0405MF-1AA2
型号： X0405MF-1AA2
厂家： ST    ST
描述：

4A SCRS
4A可控硅

可控硅
文件： 总5页 (文件大小：149K)
中文：  中文翻译
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X04 Series  
SENSITIVE  
4A SCRS  
MAIN FEATURES:  
Symbol  
Value  
4
Unit  
A
I
T(RMS)  
V
/V  
600 and 800  
50 to 200  
V
DRM RRM  
I
µA  
GT  
DESCRIPTION  
Thanks to highly sensitive triggering levels, the  
X04 SCR series is suitable for all applications  
where the available gate current is limited, such as  
capacitive discharge ignitions, motor control in  
kitchen aids, overvoltage crowbar protection in low  
power supplies...  
TO202-3  
(X04xxF)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
Tl = 60°C  
4
1.35  
2.5  
0.9  
33  
A
T(RMS)  
Tamb = 25°C  
Tl = 60°C  
IT  
Average on-state current (180° conduction angle)  
A
A
(AV)  
Tamb = 25°C  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
TSM  
Tj = 25°C  
tp = 10 ms  
tp = 10 ms  
30  
²
²
2
Tj = 25°C  
4.5  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 60 Hz  
tp = 20 µs  
Tj = 125°C  
A/µs  
I
= 2 x I , tr ≤ 100ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
1.2  
0.2  
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
Tj  
September 2000 - Ed: 3  
1/5  
X04 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
X04xx  
Unit  
02  
_
05  
20  
50  
I
MIN.  
MAX.  
MAX.  
MIN.  
GT  
µA  
200  
V
= 12 V  
R = 140 Ω  
D
L
V
V
0.8  
0.1  
8
V
V
GT  
Tj = 125°C  
V
I
= V  
R = 3.3 kΩ  
R
= 1 kΩ  
GK  
GD  
RG  
D
DRM  
L
V
MIN.  
= 10 µA  
V
RG  
I
I
I
= 50mA  
= 1mA  
R
= 1kΩ  
= 1kΩ  
MAX.  
MIN.  
5
mA  
mA  
V/µs  
V
H
T
GK  
I
R
6
L
G
GK  
V
I
= 67% V  
R
= 1kΩ  
dV/dt  
Tj = 110°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MIN.  
10  
15  
D
DRM  
GK  
V
= 8 A tp = 380 µs  
MAX.  
MAX.  
MAX.  
MAX.  
1.8  
0.95  
100  
5
TM  
TM  
V
Threshold voltage  
V
t0  
R
d
Dynamic resistance  
mΩ  
µA  
mA  
I
I
DRM  
RRM  
V
= V  
RRM  
R
= 1 kΩ  
GK  
DRM  
1
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
15  
Unit  
°C/W  
R
R
Junction to leads (DC)  
th(j-l)  
Junction to ambient (DC)  
100  
th(j-a)  
PRODUCT SELECTOR  
Part Number  
Voltage  
Package  
Sensitivity  
600 V  
800 V  
X0402MF  
X0402NF  
X0405MF  
X0405NF  
X
200 µA  
200 µA  
50 µA  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
X
X
X
50 µA  
2/5  
X04 Series  
ORDERING INFORMATION  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
Base Quantity  
Packing mode  
X04xxyF 1AA2  
X04xxyF 0AA2  
X04xxyF  
X04xxyF  
0.8 g  
0.8 g  
250  
50  
Bulk  
Tube  
Note: xx = sensitivity, y = voltage  
Fig. 1: Maximum average power dissipation  
Fig. 2-1: Average and D.C. on-state current  
versus average on-state current.  
versus lead temperature.  
Fig. 2-2: Average and D.C. on-state current  
versus ambient temperature (device mounted on  
FR4 with recommended pad layout).  
Fig. 3: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
3/5  
X04 Series  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
Fig. 5: Relative variation of holding current  
versus gate-cathode resistance (typical values).  
Fig. 6: Relative variation of dV/dt immunity  
Fig. 7: Relative variation of dV/dt immunity  
versus gate-cathode resistance (typical values).  
versus  
gate-cathode capacitance  
(typical  
values).  
Fig. 8: Surge peak on-state current versus  
number of cycles.  
Fig. 9: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding value of I²t.  
a
4/5  
X04 Series  
Fig. 10: On-state characteristics (maximum  
values).  
PACKAGE MECHANICAL DATA  
TO202-3 (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
C
D
F
10.1  
0.398  
7.3  
0.287  
0.413  
10.5  
1.5  
0.059  
H
J
0.51  
1.5  
0.020  
0.059  
0.177  
M
N
N1  
O
P
4.5  
5.3  
0.209  
2.54  
0.100  
1.4  
0.7  
0.055  
0.028  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom  
http://www.st.com  
5/5  

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