Z0402NF [STMICROELECTRONICS]
4A TRIACS; 双向可控硅4A型号: | Z0402NF |
厂家: | ST |
描述: | 4A TRIACS |
文件: | 总6页 (文件大小:58K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Z04 Series
®
STANDARD
4A TRIACS
MAIN FEATURES:
Symbol
A2
Value
4
Unit
A
G
I
T(RMS)
A1
V
/V
600 to 800
V
DRM RRM
I
3 to 25
mA
GT (Q )
1
A1
A2
G
DESCRIPTION
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
TO202-3
(Z04xxF)
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
RMS on-state current (full sine wave)
Value
Unit
I
TI = 30°C
Tamb = 25°C
t = 20 ms
4
1
A
T(RMS)
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
F = 60 Hz
20
21
A
TSM
t = 16.7 ms
²
²
²
tp = 10 ms
2.2
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 125°C
20
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
tp = 20 µs
Tj = 125°C
Tj = 125°C
1.2
0.2
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
July 2003 - Ed: 5
1/6
Z04 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Z04xx
Unit
02
05
09
10
I
(1)
mA
ALL
ALL
ALL
MAX.
MAX.
MIN.
3
5
10
25
GT
V
V
V
= 12 V
R = 30 Ω
D
L
1.3
V
V
GT
V
0.2
= V
R = 3.3 kΩ Tj = 125°C
GD
D
DRM
L
I
(2)
I = 50 mA
MAX.
MAX.
3
6
5
10
15
25
100
2
25
25
50
200
5
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
10
15
20
1
G
GT
L
12
10
0.5
dV/dt (2)
V
= 67 %V
gate open Tj = 110°C
Tj = 110°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
V
(2)
(2)
I
= 5.5 A
tp = 380 µs
Tj = 25°C
MAX.
2.0
0.95
180
5
V
V
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
DRM
RRM
DRM RRM
MAX.
0.5
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°C/W
°C/W
R
Junction to lead (AC)
Junction to ambient
15
th(j-l)
R
100
th(j-a)
2/6
Z04 Series
PRODUCT SELECTOR
Part Number
Voltage
Sensitivity
Type
Package
600 V 700 V 800 V
Z0402MF
Z0402SF
Z0402NF
Z0405MF
Z0405SF
Z0405NF
Z0409MF
Z0409SF
Z0409NF
Z0410MF
Z0410SF
Z0410NF
X
X
X
X
X
X
X
X
X
X
X
X
3 mA
3 mA
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
TO202-3
3 mA
5 mA
5 mA
5 mA
10 mA
10 mA
10 mA
25 mA
25 mA
25 mA
ORDERING INFORMATION
Blank
Z 04 02 M F
0AA2
TRIAC
SERIES
PACKING MODE:
0AA2:Tube
VOLTAGE:
PACKAGE:
F:TO202-3
1AA2: Bulk
CURRENT: 4A
M: 600V
S: 700V
N: 800V
SENSITIVITY:
02: 3mA
05: 5mA
09: 10mA
10: 25mA
OTHER INFORMATION
Part Number
Base
quantity
Packing
mode
Marking
Weight
Z04xxyF 0AA2
Z04xxyF 1AA2
Z04xxyF
Z04xxyF
0.8 g
0.8 g
50
Tube
Bulk
250
Note: xx = sensitivity, y = voltage
3/6
Z04 Series
Fig. 1: Maximum power dissipation versus RMS
Fig. 2: RMS on-state current versus ambient
on-state current (full cycle).
temperature (full cycle).
P(W)
IT(RMS)(A)
7
4.5
Rth(j-a)=Rth(j-l)
4.0
3.5
3.0
2.5
2.0
6
5
4
3
2
1.5
Rth(j-a)=100°C/W
1.0
1
0.5
IT(RMS)(A)
Tamb(°C)
0.0
0
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
K=[Zth(j-a)/Rth(j-a)]
2.5
1E+0
IGT
2.0
1E-1
1E-2
1.5
IH & IL
1.0
0.5
Tj(°C)
40 60
tp(s)
1E-3
0.0
-40 -20
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
20
80 100 120 140
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
a
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
ITSM(A)
500
25
Tj initial=25°C
t=20ms
20
100
10
1
dI/dt limitation:
20A/µs
One cycle
ITSM
Non repetitive
Tj initial=25°C
15
Repetitive
Tamb=25°C
10
I²t
5
tp (ms)
Number of cycles
0
0.01
0.10
1.00
10.00
1
10
100
1000
4/6
Z04 Series
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
ITM(A)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
20.0
2.6
2.4
2.2
2.0
1.8
1.6
10.0
Tj=Tj max.
Z0410
1.4
1.2
1.0
1.0
Tj=25°C
0.8
Z0409
Z0402
0.6
Tj max.
Vto= 0.95 V
Rd= 180 mW
Z0405
0.4
VTM(V)
0.2
0.0
(dV/dt)c (V/µs)
0.1
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj (°C)
0
0
25
50
75
100
125
5/6
Z04 Series
PACKAGE MECHANICAL DATA
TO202-3 (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
A
REF.
Inches
C
A
C
D
F
10.1
0.398
7.3
0.287
0.413
10.5
O
1.5
0.059
F
J
D
H
J
0.51
1.5
0.020
0.059
0.177
P
H
M
N
N1
O
P
4.5
5.3
0.209
N1
2.54
0.100
1.4
0.7
0.055
0.028
N
M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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