XZTNI53W-1 [SUNLED]
EMITTER IR 940NM 50MA SMD;型号: | XZTNI53W-1 |
厂家: | SUNLED CORPORATION |
描述: | EMITTER IR 940NM 50MA SMD |
文件: | 总4页 (文件大小:248K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Part Number: XZTNI53W-1
1.6 x 0.8 mm Infrared Emitting Diode
Features
● Long life and robust package
● Standard Package: 2,000pcs/ Reel
● MSL (Moisture Sensitivity Level): 3
● Halogenꢀfree
● RoHS compliant
Absolute Maximum Ratings
(TA=25°C)
TNI
(GaAs)
Operating Characteristics
(TA=25°C)
TNI
(GaAs)
Unit
Unit
V
Forward Voltage (Typ.)
(IF=20mA)
Reverse Voltage
Forward Current
VR
5
V
VF
VF
IR
1.2
1.6
10
IF
50
mA
Forward Voltage (Max.)
(IF=20mA)
V
Forward Current (Peak)
1/100 Duty Cycle
10us Pulse Width
iFS
1200
mA
mW
°C
Reverse Current (Max.)
(VR=5V)
ꢁA
Power Dissipation
PD
TA
90
Wavelength of Peak
Emission CIE127ꢀ2007* (Typ.)
(IF=20mA)
λP
940*
nm
Operating Temperature
Storage Temperature
ꢀ40 ~ +85
ꢀ40 ~ +85
Tstg
Spectral Line Full Width
At HalfꢀMaximum (Typ.)
(IF=20mA)
△λ
50
90
nm
pF
A Relative Humidity between 40% and 60% is recommended in
ESDꢀprotected work areas to reduce static build up during assembly
process (Reference JEDEC/JESD625ꢀA and JEDEC/JꢀSTDꢀ033)
Capacitance (Typ.)
(VF=0V, f=1MHz)
C
Radiant Intensity
CIE127ꢀ2007*
(Po=mW/sr)
Wavelength
CIE127ꢀ2007*
Viewing
Angle
2θ 1/2
Part
Number
Emitting
Material
Lensꢀcolor
nm
λP
@20mA
min.
typ.
1.2
0.8*
2.8
1.8*
XZTNI53Wꢀ1
GaAs
Water Clear
940*
150°
*Radiant Intensity value and wavelength are in accordance with CIE127ꢀ2007 standards.
Dec 07,2020
XDSA8991 V5ꢀX Layout: Maggie L.
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Part Number: XZTNI53W-1
1.6 x 0.8 mm Infrared Emitting Diode
TNI
100%
80%
60%
40%
20%
0%
0°
15°
1.0
Ta = 25 °C
Ta = 25 °C
30°
45°
60°
75°
0.5
0.0
90°
600
650
700
750
800
850
900
950
1000 1050
0°
15° 30° 45° 60° 75° 90°
Wavelength (nm)
Spatial Distribution
Relative Intensity Vs. CIE Wavelength
ꢀ TNI
50
40
30
20
10
0
2.5
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
T
a
= 25 °C
T = 25 °C
a
2.0
1.5
1.0
0.5
0.0
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
ꢀ40 ꢀ20
0
20 40 60 80 100
ꢀ40 ꢀ20
0
20 40 60 80 100
Forward voltage (V)
Forward Current vs.
Forward Voltage
Forward current (mA)
Radiant Intensity vs.
Forward Current
Ambient temperature (°C)
Forward Current Derating Curve
Ambient temperature (°C)
Radiant Intensity vs.
Ambient Temperature
LED is recommended for reflow soldering and
soldering profile is shown below.
Dec 07,2020
XDSA8991 V5ꢀX Layout: Maggie L.
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Part Number: XZTNI53W-1
1.6 x 0.8 mm Infrared Emitting Diode
ꢀ The device has a single mounting surface.
The device must be mounted according to
the specifications.
ꢀ Recommended Soldering Pattern
(Units : mm; Tolerance: ± 0.1)
ꢀ Reel Dimension (Units : mm)
ꢀ Tape Specification (Units : mm)
Remarks:
If special sorting is required (e.g. binning based on forward voltage or radiant intensity / luminous flux),
the typical accuracy of the sorting process is as follows:
1. Radiant Intensity / Luminous Flux: +/ꢀ15%
2. Forward Voltage: +/ꢀ0.1V
Note: Accuracy may depend on the sorting parameters
Dec 07,2020
XDSA8991 V5ꢀX Layout: Maggie L.
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Part Number: XZTNI53W-1
1.6 x 0.8 mm Infrared Emitting Diode
PACKING & LABEL SPECIFICATIONS
TERMS OF USE
1. Data presented in this document reflect statistical figures and should be treated as technical reference only.
2. Contents within this document are subject to improvement and enhancement changes without notice.
3. The product(s) in this document are designed to be operated within the electrical and environmental specifications indicated on the datasheet.
User accepts full risk and responsibility when operating the product(s) beyond their intended specifications.
4. The product(s) described in this document are intended for electronic applications in which a person’s life is not reliant upon the LED. Please
consult with a SunLED representative for special applications where the LED may have a direct impact on a person’s life.
5. The contents within this document may not be altered without prior consent by SunLED.
6. Additional technical notes are available at https://www.SunLEDusa.com/TechnicalNotes.asp
Dec 07,2020
XDSA8991 V5ꢀX Layout: Maggie L.
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