12N60 [SUNMATE]

N-CHANNEL POWER MOSFET;
12N60
型号: 12N60
厂家: SUNMATE electronic Co., LTD    SUNMATE electronic Co., LTD
描述:

N-CHANNEL POWER MOSFET

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中文:  中文翻译
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12N60 Series  
N-CHANNEL POWER MOSFET  
Features  
RDS(ON)<0.80@ VGS=10V  
Fast switching capability  
Low gate charge  
Lead free in compliance with EU RoHS directive.  
Green molding compound  
Pin Definition:  
Mechanical Data  
1. Gate  
2. Drain  
Case: TO-220,ITO-220,TO-262,TO-263 Package  
3. Source  
Block Diagram  
Ordering Information  
D
Package  
Part No.  
Packing  
TO-220  
ITO-220  
TO-262  
TO-263  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
12N60T  
12N60F  
12N60K  
12N60G  
G
S
TA = 25C unless otherwise specified  
Maximum Ratings  
PARAMETER  
SYMBOL  
RATINGS  
600  
UNIT  
V
Drain-Source Voltage  
VDSS  
±30  
V
Gate-Source Voltage  
VGSS  
ID  
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
12  
48  
A
A
IDM  
Avalanche Energy  
Power Dissipation  
Single Pulsed (Note 3)  
EAS  
790  
225  
51  
mJ  
TO-220/TO-262/TO-263  
W
PD  
ITO-220  
W
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by TJ  
3. L = 30mH, IAS = 7.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATING  
62.5  
UNIT  
°C/W  
TO-220/ITO-220  
TO-262/TO-263  
Junction to Ambient  
Junction to Case  
TO-220/TO-262/TO-263  
ITO-220  
0.56  
θJC  
°C/W  
2.6  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
OFF CHARACTERISTICS  
SYMBOL  
TEST CONDITIONS  
VGS=0V, ID=250μA  
MIN TYP MAX UNIT  
Drain-Source Breakdown Voltage  
BVDSS  
IDSS  
600  
V
Drain-Source Leakage Current  
Gate- Source Leakage Current  
VDS=600V, VGS=0V  
1
µA  
Forward  
Reverse  
V
G=30V, VDS=0V  
100 nA  
-100 nA  
IGSS  
VGS=-30V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250μA  
2.0  
4.0  
V
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.60 0.80  
VGS=10V, ID=6A  
CISS  
COSS  
CRSS  
1480  
200  
25  
pF  
pF  
pF  
Output Capacitance  
VDS=25V, VGS=0V, f=1.0 MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
30  
115  
95  
ns  
ns  
VDD =300V, ID =12A,  
RG =25(Note 1, 2)  
Turn-On Rise Time  
Turn-Off Delay Time  
ns  
Turn-Off Fall Time  
85  
ns  
Total Gate Charge  
QG  
nC  
nC  
nC  
42  
VDS=480V, ID=12A,  
VGS=10V (Note 1, 2)  
Gate-Source Charge  
QGS  
QGD  
8.6  
21  
Gate-Drain Charge  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
VGS = 0 V, IS = 12A  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
1.4  
V
A
IS  
12  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
48  
A
Reverse Recovery Time  
trr  
570  
ns  
VGS=0V, IS=12A,  
dIF/dt =100 A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
5.5  
μC  
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.  
2. Essentially independent of operating temperature.  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
*
SD controlled by pulse period  
Same Type  
as D.U.T.  
VGS  
* D.U.T.-D vice Under Test  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
TEST CIRCUITS AND WAVEFORMS(Cont.)  
VDS  
90%  
10%  
VGS  
tD(ON)  
tD(OFF)  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
VGS  
QG  
10V  
QGS  
QGD  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
TYPICAL CHARACTERISTICS  
Transfer Characteristics  
On-Resign Characteristics  
VGS  
Top:  
15V  
10V  
8.0V  
7.0V  
6.5V  
6.0V  
101  
101  
150°C  
25°C  
Bottom: 5.5V  
-55°C  
100  
100  
Notes:  
Notes:  
1.VDS=50V  
250µs Pulse Test  
TC=25°C  
2.250µs Pulse Test  
10-1  
10-1  
100  
101  
2
4
6
8
10  
Drain-Source Voltage, VGS (V)  
Gate-Source Voltage, VGS (V)  
TYPICAL CHARACTERISTICS  
TO-220 Mechanical Drawing  
ITO-220 Mechanical Drawing  
TO-262 Mechanical Drawing  
TO-263 Mechanical Drawing  

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