B3150B [SUNMATE]
3.0A Patch Schottky diode 150V SMB series;
| 型号： | B3150B |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 3.0A Patch Schottky diode 150V SMB series |
| 文件： | 总2页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B3150B - B3200B
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 150-200V
CURRENT: 3.0 A
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
High Current Capability
Low Power Loss, High Efficiency
!
!
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
B
SMB(DO-214AA)
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
A
B
C
D
E
G
H
J
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
Mechanical Data
A
J
C
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
D
!
!
!
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
G
H
All Dimensions in mm
E
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Characteristic
B3200B
Unit
B3150B
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
200
140
200
VRRM
VRMS
VDC
150
105
150
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
3.0
A
IFSM
80.0
0.95
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
A
VF
IR
V
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
mA
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
160
40.0
-65 to +150
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
TJ,
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
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RATINGS AND CHARACTERISTIC CURVES B3150B THRU B3200B
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
80
64
48
32
3
2.4
1.8
1.2
0.6
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
16
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
20
10
10
1
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
0.1
0.01
B3150B
B3200B
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
100
2000
1000
B3150B-B3200B
10
1
100
TJ=25 C
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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