BYG10G

更新时间:2024-09-18 12:57:41
品牌:SUNMATE
描述:1.5A patch fast recovery diode 400V SMA series

BYG10G 概述

1.5A patch fast recovery diode 400V SMA series

BYG10G 数据手册

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BYG10D - BYG10M  
SURFACE MOUNT SILICON MESA (SMD) RECTIFIER DIODE  
VOLTAGE RANGE: 200 - 1000V  
CURRENT: 1.5 A  
Features  
Controlled avalanche characteristics  
Glass passivated junction  
Low reverse current  
High surge current capability  
Wave and reflow solderable  
B
SMA(DO-214AC)  
Dim  
MinMax  
Mechanical Data  
A
B
C
D
E
G
H
J
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
!
!
Case: SMA/DO-214AC, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
A
J
C
!
!
D
Weight: 0.064 grams (approx.)  
!
G
H
E
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
600  
800  
1000  
30  
Unit  
V
V
V
V
BYG10D  
BYG10G  
BYG10J  
BYG10K  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
BYG10M V =V  
V
A
R
Peak forward surge current  
Average forward current  
Junction and storage  
temperature range  
t =10ms,  
half sinewave  
I
p
FSM  
I
1.5  
–55...+150  
A
C
FAV  
T =T  
j
stg  
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =25 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
Maximum Thermal ResistancejT = 25C  
Parameter  
Test Conditions  
Symbol Value  
Unit  
K/W  
K/W  
K/W  
K/W  
Junction lead  
Junction ambient mounted on epoxy–glass hard tissue  
mounted on epoxy–glass hard tissue, 50mm 35 m Cu  
T =const.  
L
R
25  
thJL  
thJA  
thJA  
thJA  
R
R
R
150  
125  
100  
2
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu  
2
3
Electrical CharacteristicsjT = 25C  
Parameter  
Test Conditions  
Type Symbol Min  
Typ Max Unit  
Forward voltage  
I =1A  
V
V
1.1  
1.15  
1
10  
4
V
V
A
A
s
F
F
F
I =1.5A  
F
Reverse current  
V =V  
V =V  
R
I
I
R
RRM  
RRM  
R
, T =100 C  
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A  
t
rr  
F
R
R
www.sunmate.tw  
1 of 2  
RATINGS AND CHARACTERISTIC CURVES BYG10D THRU BYG10M  
100  
10  
100  
10  
T =125°C  
j
1
1
0.1  
T =75°C  
j
0.1  
0.01  
V =V  
R
R RM  
T =25°C  
j
0.01  
200  
3.0  
0
40  
80  
120  
160  
0
0.6  
1.2  
V – Forward Voltage ( V )  
F
1.8  
2.4  
94 9180  
T – Junction Temperature ( °C )  
j
94 9284  
Figure 3. Typ. Forward Current vs. Forward Voltage  
Figure 1. Typ. Reverse Current vs. Junction Temperature  
5000  
2.0  
1.6  
T
=125°C  
amb  
4000  
3000  
T
amb  
=100°C  
1.2  
0.8  
0.4  
0
R
=25K/W  
thJA  
T
amb  
=75°C  
100K/W  
T
=50°C  
amb  
2000  
1000  
0
125K/W  
T
=25°C  
amb  
I =0.5A, i =0.125A  
R
R
150K/W  
80  
1.0  
200  
0
0.2  
0.4  
I – Forward Current ( A )  
F
0.6  
0.8  
0
40  
120  
160  
94 9544  
94 9179  
T
amb  
– Ambient Temperature ( °C )  
Figure 2. Max. Average Forward Current vs.  
Ambient Temperature  
Figure 4. Typ. Reverse Recovery Time vs.  
Forward Current  
2000  
T
amb  
=125°C  
T
=100°C  
amb  
1600  
1200  
T
amb  
=75°C  
T
amb  
=50°C  
T
=25°C  
amb  
800  
400  
0
I =0.5A, i =0.125A  
R
R
1.0  
0
0.2  
0.4  
I – Forward Current ( A )  
F
0.6  
0.8  
94 9338  
Figure 5. Typ. Reverse Recovery Charge vs.  
Forward Current  
2 of 2  
www.sunmate.tw  

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