BZT52C3V3 [SUNMATE]
0.5W patch zener diode SOD-323 3.3V series;
| 型号： | BZT52C3V3 |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 0.5W patch zener diode SOD-323 3.3V series 二极管 |
| 文件： | 总3页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52C2V4 - BZT52C39
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE RANGE: 2.4 - 39 V
POWER: 0.5Wa t t s
Features
!
!
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly
Processes
!
B
C
E
Mechanical Data
SOD-123FL
Dim Min Max
Typ
3.58 3.72 3.65
2.72 2.78 2.75
1.77 1.83 1.80
1.02 1.08 1.05
0.097 1.03 1.00
0.13 0.17 0.15
0.53 0.57 0.55
Case
: SOD-123FL
!
A
B
C
D
E
H
L
plastic body over passivated junction
Terminals
D
!
!
: Plated axial leads,
H
Method 2026
solderable per MIL-STD-750,
L
Polarity
!
!
: Color band denotes cathode end
Mounting Position
: Any
All Dimensions in mm
E
Weight:0.0007 ounce, 0.02 grams
!
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VF
Value
0.9
Unit
V
Forward Voltage (Note 2)
Power Dissipation (Note 1)
@ IF = 10mA
Pd
500
mW
°C/W
°C
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
305
Tj, TSTG
-65 to +150
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
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@ TA = 25°C unless otherwise specified
Electrical Characteristics
Maximum
Reverse
Current
(Note 2)
Typical
Temperature
Coefficient
@ IZTC
Zener Voltage Range
(Note 2)
Maximum Zener
Test
Current
IZTC
Impedance (Note 3)
Type
Number
mV/°C
Vz @IZT
IZT ZZT @ IZT ZZK @ IZK IZK
IR
@ VR
Nom (V) Min (V) Max (V) mA
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
uA
50
V
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
Max
0
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
W
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.2
2.5
2.6
2.9
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
600
600
600
600
600
600
600
500
480
400
150
80
1.0
20
1.0
0
2.8
3.2
10
1.0
0
3.1
3.5
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
0
3.4
3.8
1.0
0
3.7
4.1
1.0
0
4.0
4.6
1.0
0
4.4
5.0
2.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
4.8
5.4
2.0
5.2
6.0
2.0
5.8
6.6
4.0
0.4
6.4
7.2
4.0
1.2
7.0
7.9
80
5.0
2.5
7.7
8.7
80
5.0
3.2
8.5
9.6
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
6.0
3.8
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
7.0
4.5
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
8.0
5.4
12
8.0
6.0
13
8.0
7.0
15
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
9.2
16
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
18
20
22
24
27
30
33
36
39
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
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0.6
50
40
T = 25°C
j
C3V9
C2V7
C5V6
C3V3
C6V8
C4V7
0.5
0.4
0.3
0.2
C6V2
C8V2
30
20
Test Current IZ
5.0mA
10
0
0.1
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
8
9
10
7
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
30
20
10
0
10
Tj = 25°C
C10
C12
C39
Tj = 25°C
8
6
C15
C18
Test current IZ
2mA
4
C22
Test Current IZ
2mA
C27
Test current IZ
5mA
C33
C36
2
0
0
10
20
30
40
10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
Fig. 4 Zener Breakdown Characteristics
1000
Tj = 25 °C
f = 1MHz
VR = 1V
VR = 2V
100
VR = 1V
VR = 2V
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
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