EGF1D [SUNMATE]
1A patch fast recovery diode 200V SMA series;
| 型号： | EGF1D |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A patch fast recovery diode 200V SMA series 二极管 光电二极管 |
| 文件： | 总2页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGF1A - EGF1D
ULTRAFAST SURFACE MOUNT RECTIFIER DIODES
VOLTAGE RANGE: 50 - 200V
CURRENT: 1.0 A
Features
!
!
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
! Ideal for surface mount automotive applications
!
High temperature metallurgically bonded construction
Superfast recovery times for high efficiency
Glass passivated cavity-free junction
Built-in strain relief
!
!
!
!
Easy pick and place
B
SMA(DO-214AC)
Mechanical Data
Dim
MinMax
Case: SMA(DO-214AC)Molded Plastic
A
B
C
D
E
G
H
J
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
!
!
A
J
C
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Mounting Position: Any
!
D
!
!
!
G
H
E
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
EGF1A
EGF1B
EGF1C
EGF1D
Characteristic
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
150
105
50
35
100
70
200
140
V
VR(RMS)
RMS Reverse Voltage
V
A
A
IO
Average Rectified Output Current
@ TT = 75ꢀC
1.0
30
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
IFSM
(JEDEC Method)
1.0
Forward Voltage Drop
@ IF = 1.0A
@ TA 25ꢀC
VFM
IRM
V
5.0
50
Peak Reverse Current
at Rated DC Blocking Voltage
=
ꢁA
@ TA = 125ꢀC
trr
Cj
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
50
15
30
ns
pF
RꢂJT
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
ꢀC/W
ꢀC
Tj, TSTG
-65 to +150
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.
1 of 2
www.sunmate.tw
RATINGS AND CHARACTERISTICS CURVES EGF1A THRU EGF1D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1.0
0.5
0
30
25
T =T max.
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
J
J
RESISTIVE OR
20
15
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
10
5.0
0
0
25 50
75
100 125 150 175
LEAD TEMPERATURE, °C
1
100
10
NUMBER OF CYCLES AT 60 H
Z
FIG. 3 -TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
10
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
1,000
PULSE WIDTH=300µs
1% DUTY CYCLE
100
10
T =150°C
J
T =25°C
J
T =150°C
J
1
T =100°C
J
1
0.1
0
0.1
T =25°C
J
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
0.01
0.2 0.4 0.6 0.8
1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
10
70
60
50
40
30
20
T =25°C
J
f=1.0 MHz
Vsig=50mVp-p
1
10
0
0.1
0.01
0.1
10
REVERSE VOLTAGE, VOLTS
100
1
1
0.1
10
100
t, PULSE DURATION, sec.
2 of 2
www.sunmate.tw
相关型号：
EGF1D-E3
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
VISHAY
EGF1D-E3/2KA
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN
VISHAY
EGF1D-HE3
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
VISHAY
EGF1D-HE3/67A
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN, Signal Diode
VISHAY
EGF1DE3
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明