ER3C [SUNMATE]
3.0A patch fast recovery diode 150V SMC series;
| 型号： | ER3C |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 3.0A patch fast recovery diode 150V SMC series |
| 文件： | 总2页 (文件大小：866K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER3AB - ER3JB
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 3.0 A
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
!
!
!
!
Easilycleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
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!
!
SMB(DO-214AA)
B
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
A
B
C
D
E
G
H
J
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
Mechanical Data
A
J
C
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
D
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!
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Weight: 0.093 grams (approx.)
G
H
All Dimensions in mm
E
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
Unit
ER3AB ER3BB ER3CB ER3DB ER3EB ER3GB ER3JB
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
VRRM
VRMS
VDC
MaximumDC blocking voltage
Maximumaverage forw ard rectified current
@TA=75
100
3.0
A
IF(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
IFSM
100
A
V
Maximuminstantaneous forw ard voltage
0.95
1.25
VF
IR
1.7
@ 3.0A
Maximum reverse current
@TA=25
5.0
300
35
A
at rated DC blocking voltage @TA=125
Maximumreverse recovery time (Note 1)
ns
trr
CJ
RθJA
TJ
Typical junction capacitance
Typical thermal resistance
(Note 2)
(Note 3)
95
pF
40
/W
Operating junction temperature range
- 55 ----- + 150
- 55 ----- + 150
Storage temperature range
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
TSTG
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
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FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
10
N 1.
N 1.
+0.5A
D.U.T.
0
(+)
PULSE
-0.25A
25VDC
(approx)
(-)
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
SET TIME BASE FOR 10 ns/cm
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
z
4.0
3.0
2.5
2.0
ER3EB
ER3GB
-
ER3AB
-
ER3DB
ER3JB
3.0
2.0
1.0
1.5
Single Phase
Half Wave 60H
Z
1.0
Resistive or
TJ=25
Inductive Load
Pulse Width=300µs
0.375"(9.5mm)Lead length
0.5
0
0.4
0.8
1.2
1.6
2.0
2.4
0
25
50
75 100 125 150 175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- PEAK FORWARD SURGE CURRENT
1000
120
600
400
100
8.3ms Single Half
Sine-Wave
200
80
100
60
60
40
20
40
TJ=25
f=1.0MHz
20
10
0
0.1 0.2 0.4
1
2
4
10 20 40 100
1
2
5
10
20
50 100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT60Hz
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
1 0 0 0
T
T
J = 1 0 0
1 0 0
1 0
J = 7 5
1 .0
0 .1
T
J = 2 5
0 .0 1
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0
PERCENT OF RATED PEAK REVERSE VOLTAGE.
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