GP10B [SUNMATE]

1.0A plug-in rectifier diode 100V DO-41 series ;
GP10B
型号: GP10B
厂家: SUNMATE electronic Co., LTD    SUNMATE electronic Co., LTD
描述:

1.0A plug-in rectifier diode 100V DO-41 series

文件: 总2页 (文件大小:299K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GP10A - GP10M  
AXIAL LEADED SILICON RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
!
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
!
!
A
B
A
!
!
High Reliability  
High Surge Current Capability  
C
Mechanical Data  
D
Case:D O - 4 1 , Molded Plastic  
!
!
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
Mounting Position: Any  
DO-41  
Min  
Dim  
A
Max  
!
!
!
!
25.40  
4.06  
¾
B
5.21  
0.864  
2.72  
Marking: Type Number  
C
0.71  
D
2.00  
All Dimensions in mm  
@TA=25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol GP10A GP10B GP10D GP10G GP10J GP10K GP10M  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
I
O
@TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
I
FSM  
30  
A
Forward Voltage  
@IF = 1.0A  
V
FM  
1.0  
V
µA  
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 100°C  
@TA = 25°C  
5.0  
50  
I
RM  
Typical Junction Capacitance (Note 2)  
C
j
15  
50  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
R
JA  
K/W  
Operating Temperature Range  
Storage Temperature Range  
T
j
-65 to +125  
-65 to +150  
°C  
°C  
T
STG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  
10  
1.0  
0.1  
Tj = 25ºC  
PULSE WIDTH = 300µs  
2% DUTY CYCLE  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
50  
40  
30  
100  
Tj = 25ºC  
f = 1MHz  
10  
20  
10  
0
8.3ms Single half sine-wave  
JEDEC Method  
1.0  
1.0  
10  
100  
1.0  
10  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance  
2 of 2  
www.sunmate.tw  

相关型号:

GP10B-A

Rectifier Diode,
MCC

GP10B-AP

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
MCC

GP10B-B

Rectifier Diode, 1 Element, 1A, Silicon
FRONTIER

GP10B-E3

Rectifier Diode, 1 Element, 1A, 100V V(RRM),
VISHAY

GP10B-E3/54

DIODE GEN PURP 100V 1A DO204AL
VISHAY

GP10B-E3/73

Diode Switching 100V 1A 2-Pin DO-204AL Ammo
VISHAY

GP10B-HE3/54

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

GP10B-HE3/73

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

GP10B-M3/54

DIODE GEN PURP 100V 1A DO204AL
VISHAY

GP10B-M3/73

DIODE GEN PURP 100V 1A DO204AL
VISHAY

GP10B-T

Rectifier Diode,
MCC

GP10B-T/B

Rectifier Diode, 1 Element, 1A, Silicon
FRONTIER