SK18F [SUNMATE]
1A Patch Schottky diode 80V SMAF series;
| 型号： | SK18F |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A Patch Schottky diode 80V SMAF series |
| 文件： | 总2页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK12F - SK110F
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 1.0 A
Features
!
Schottky Barrier Chip
!
!
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
!
For Use in Low Voltage Application
Guard Ring Die Construction
B
!
Plastic Case Material has UL Flammability
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
C
E
Classification Rating 94V-O
Mechanical Data
SMAF
!
!
Case: SMAF,Molded Plastic
Dim Min Max Typ
D
A
B
C
D
E
H
L
4.75 4.85
3.68 3.72
4.80
3.70
2.60
1.00
Terminals: Solder Plated, Solderable
H
2.57
2.63
per MIL-STD-750, Method 2026
Polarity:Color band denotes cathode end
Mounting Position:Any
L
0.097 1.03
!
!
!
1.38 1.42 1.40
0.13 0.17 0.15
0.63 0.67 0.65
E
Weight:0.0018 ounce, 0.064 grams
All Dimensions in mm
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
SK18F SK110F
Symbol
SK12F SK13F SK14F SK15F SK16F
Unit
Characteristic
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
1.0
A
Peak forward surge current
IFSM
VF
40.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
A
V
0.45
0.55
0.70
0.85
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
mA
IR
TA=100 C
6.0
110
5.0
90
Typical junction capacitance (NOTE 1)
CJ
pF
JA
Rꢀ
°C/W
Typical thermal resistance (NOTE 2)
Operating junction temperature range
88.0
-65 to +125
-65 to +150
-65 to +150
°C
°C
TJ,
Storage temperature range
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2
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RATINGS AND CHARACTERISTIC CURVES SK12F THRU SK110F
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
32
24
16
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SK12F-SK14F
SK15F-SK110F
8
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
1,000
100
10
TJ=25 C
10.0
TJ=100 C
TJ=75 C
1
1
0.1
0.01
0.1
SK12F-SK14F
SK15F-SK16F
SK18F-SK110F
TJ=25 C
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
200
100
10
1
TJ=25 C
20
SK12F-SK14F
SK15F-SK110F
0.1
0.01
0.1
1
10
100
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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