SK52C [SUNMATE]
5A Patch Schottky diode V SMC series;
| 型号： | SK52C |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 5A Patch Schottky diode V SMC series 二极管 光电二极管 瞄准线 功效 |
| 文件： | 总2页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK52C - SK510C
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 5.0 A
Features
!
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
!
!
!
!
Plastic Case Material has UL Flammability
SMC/DO-214AB
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Classification Rating 94V-O
B
Dim
A
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
Mechanical Data
A
J
C
B
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
C
D
E
D
!
!
!
G
H
Weight: 0.21 grams (approx.)
G
J
H
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
SK52C SK53C SK54C SK55C SK56C SK58C SK510C Unit
Symbol
Characteristic
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
VRRM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
RMS
DC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
V
I
(AV)
5.0
A
Peak forward surge current
A
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
V
F
0.55
0.70
0.85
Maximum instantaneous forward voltage at 5.0A
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
mA
IR
TA=100 C
20
10
200
pF
C/W
C
Typical junction capacitance (NOTE 1)
C
J
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +125
-65 to +150
-65 to +150
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2
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RATINGS AND CHARACTERISTIC CURVES SK52C THRU SK510C
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
120
90
5.0
4.0
3.0
2.0
1.0
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
60
SK52C-SK56C
SK58C-SK510C
30
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
100
T =25 C
J
10.0
10
1
TJ=100 C
TJ=75 C
1
0.1
0.01
SK52C-SK54C
SK55C-SK56C
SK58C-SK510C
0.1
TJ=25 C
0.001
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
2000
1000
100
TJ=25 C
10
1
100
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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