SMF305C [SUNMATE]
3A patch fast recovery diode 600V SMC series;
| 型号： | SMF305C |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 3A patch fast recovery diode 600V SMC series |
| 文件： | 总2页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMF301C - SMF307C
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50-1000V
CURRENT: 3.0 A
Features
Glass Passivated Die Construction
Fast Recovery Time for High Efficiency
Low Forward Voltage Drop and High Current
Capability
!
!
!
Ideally Suited for Automatic Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
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!
B
SMC/DO-214AB
Dim
A
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
Mechanical Data
A
J
C
B
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
C
D
D
!
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!
E
G
H
Weight: 0.21 grams (approx.)
G
H
E
J
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
SMF301CSMF302C SMF303C SMF304C SMF305CSMF306C SMF307C
Characteristic
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
280
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
V
A
= 75ꢀC
@ TT
3.0
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
IFSM
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
100
A
V
Forward Voltage
@ I
F = 3.0A
VFM
IRM
trr
1.3
5.0
250
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA = 25ꢀC
@ TA = 125ꢀC
ꢁA
150
250
500
ns
Maximum Recovery Time (Note 3)
Cj
Typical Junction Capacitance (Note 2)
50
25
pF
RꢂJT
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
K/W
Tj, TSTG
-65 to +150
ꢀC
Notes:
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
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3.0
2.5
10
1.0
2.0
1.5
1.0
0.5
0
0.1
Tj = 25°C
IF Pulse Width: 300 µs
0.01
25
50
75
100
125
150
175
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
Single Half-Sine-Wave
(JEDEC Method)
100
Tj = 125°C
100
10
80
60
40
Tj = 25°C
1.0
0.1
20
0
1
10
100
0
20
40
60
80 100
120 140
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
(+)
(-)
0A
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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