SS1G [SUNMATE]

1A patch fast recovery diode 400V SMA series;


型号：	SS1G
厂家：	SUNMATE electronic Co., LTD
描述：	1A patch fast recovery diode 400V SMA series 二极管
文件：	总2页 (文件大小：365K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SS1A - SS1M

SURFACE MOUNT SUPER FAST RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

High current capability

High surge current capability

! High reliability

Low reverse current

Low forward voltage drop

Super fast recovery time

SMA(DO-214AC)

Mechanical Data

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

VRRM

VRMS

VDC

Characteristic

SS1A SS1B SS1C SS1D SS1E SS1G SS1J SS1K SS1M

Unit

800 1000 Volts

560 700 Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

300

210

300

1.0

400

280

400

600

420

600

Maximum DC Blocking Voltage

100

800 1000 Volts

Amp.

IF(AV)

Maximum Average Forward Current Ta = 55 °C

Peak Forward Surge Current

8.3 ms. Single half sine wave Superimposed

on rated load (JEDEC Method)

IFSM

Amps.

Maximum Peak Forward Voltage at IF = 1.0 Amp.

Maximum DC Reverse Current Ta = 25 °C

0.95

1.4

1.7

Volts

IR(H)

Trr

at Rated DC Blocking Voltage

Ta = 100 °C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

- 65 to + 150

°C

Storage Temperature Range

TSTG

Notes :

( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

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RATING AND CHARACTERISTIC CURVES ( SS1A - SS1M )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Trr

+ 0.5 A

D.U.T.

PULSE

GENERATOR

( NOTE 2 )

- 0.25

50 Vdc

(approx)

OSCILLOSCOPE

( NOTE 1 )

- 1.0 A

SET TIME BASE FOR 15 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

1 cm

FIG.2 - DERATING CURVE FOR OUTPUT

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

RECTIFIED CURRENT

1.0

0.8

8.3 ms SINGLE HALF SINE WAVE

Ta = 50

0.6

0.4

0.2

6.0

60Hz RESISTIVE OR INDUCTIVE LOAD

25 50 75 100 125

150

175

60 100

NUMBER OF CYCLES AT 60Hz

AMBIENT TEMPERATURE, ( C)

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

Pulse Width = 300

2% Duty Cycle

T_J= 100 C

T_J= 25

1.0

0.1

SS1A - SS1D

SS1E - SS1G

1.0

0.1

T_J= 25 C

SS1J - SS1M

0.01

100

120

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE, VOLTS

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