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元器件品牌
IRF6N60
[SUNTAC]
POWER MOSFET; 功率MOSFET
元器件型号：
IRF6N60
生产厂家：
SUNTAC ELECTRONIC CORP.
描述和应用：
POWER MOSFET
功率MOSFET
PDF文件：
总5页 (文件大小：150K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF6N60参数
查看货源
IRF6N60FP
POWER MOSFET
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21
SUNTAC
IRF710
Power MOSFET
Warning
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156
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197
VISHAY
IRF710
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
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156
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334
INTERSIL
IRF710
N-Channel Power MOSFETs, 2.25A, 350-400V
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131
FAIRCHILD
IRF710
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
SAMSUNG
IRF710
IRF710
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3
TI
IRF710
2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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7
ROCHESTER
IRF710-005
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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0
VISHAY
IRF710-012PBF
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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156
-
0
VISHAY
IRF7101
HEXFET Power MOSFET
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156
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361
IRF
IRF7101
HEXFET Power MOSFET
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156
-
213
IRF
IRF7101PBF
HEXFET㈢ Power MOSFET
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156
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79
IRF
IRF7101PBF
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SO-8
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156
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0
INFINEON
IRF7101TRPBF
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SO-8
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156
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0
INFINEON
IRF7102
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 2A I(D) | SO
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168
ETC
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