STC2SD882 [SUNTAC]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
| 型号： | STC2SD882 |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STC2SD882
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772
1
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-252
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
UNIT
V
V
40
30
5
Collector-emitter voltage
Emitter-base voltage
V
Collector dissipation( Tc=25°C)
Collector dissipation( Ta=25°C)
Collector current(DC)
Collector current(PULSE)
Base current
10
1
3
7
0.6
W
W
A
A
A
Pc
Ic
Ic
IB
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
VCB=30V,IE=0
MIN TYP MAX UNIT
Collector cut-off current
Emitter cut-off current
DC current gain(note 1)
ICBO
IEBO
hFE1
hFE2
1000
1000
nA
nA
VEB=3V,Ic=0
VCE=2V,Ic=20mA
30
200
150
VCE=2V,Ic=1A
100
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
VCE(sat)
VBE(sat)
fT
Ic=2A,IB=0.2A
Ic=2A,IB=0.2A
VCE=5V,Ic=0.1A
VCB=10V,IE=0,f=1MHz
0.3
1.0
80
0.5
2.0
V
V
MHz
pF
Cob
45
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
1
STC2SD882
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
A
B
RANGE
100-200
200-300
TYPICAL PARAMETERS PERFORMANCE
Fig.2 Derating curve of safe
Fig.1 Static characteristics
Fig.3 Power Derating
operating areas
150
12
8
1.6
-IB=9mA
-IB=8MA
-IB=7mA
100
1.2
0.8
-IB=6mA
-IB=5mA
S
/
b
l
i
m
D
i
t
i
e
d
s
s
i
p
-IB=4mA
a
t
50
0
i
o
n
4
0
-IB=3mA
-IB=2mA
-IB=1mA
l
i
m
0.4
0
i
t
e
d
0
4
8
12
16
20
-50
0
50
100
150
200
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(°C)
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
Fig.5 Current gain-
bandwidth product
Fig.6 Safe operating area
3
3
1
Ic(max),Pulse
0
.1
10
10
10
mS
1
0
1
m
m
S
S
Ic(max),DC
VCE=5V
I
E=0
f=1MHz
2
2
0
10
10
10
IIB=8mA
1
1
-1
10
10
10
0
0
-2
10
10
10
0
-1
10
-2
10
-3
10
-2
10
-1
10
0
1
0
1
2
10
10
10
10
10
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
Fig.7 DC current gain
Fig.8 Saturation Voltage
3
4
10
10
V
CE=-2V
VBE(sat)
3
10
2
10
2
10
VCE(sat)
1
10
1
10
0
0
10
10
0
10
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
2
相关型号：
STC3.3-20C2RM
CAPACITOR, TANTALUM, SOLID, POLARIZED, 20 V, 3.3 uF, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
STC3.3-6C1RK
CAPACITOR, TANTALUM, SOLID, POLARIZED, 6 V, 3.3 uF, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
STC3.36C1RK
CAPACITOR, TANTALUM, SOLID, POLARIZED, 6 V, 3.3 uF, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
©2020 ICPDF网 联系我们和版权申明