T16-G [SUNTAC]
16A Triacs logic level; 16A双向可控硅逻辑电平
| 型号： | T16-G |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | 16A Triacs logic level |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B
®
BTA/BTB16 series
1
!!!!!!!!!!!!!
!
!!16A Triacs logic level
MAIN FEATURES:
Symbol
A2
Value
16
Unit
G
I
A
V
T(RMS)
A1
V
/V
600, 700 and 800
DRM RRM
A2
I
10 to 50
mA
GT (Q )
1
A1
A2
DESCRIPTION
G
Available either in through-hole or surface-mount
packages, the BTA/BTB16 and T16 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications
such as static relays, heating regulation, induction
motor starting circuits... or for phase control
operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734).
2
D PAK
(T16-G)
A2
A1
A2
A1
A2
G
G
TO-220AB Insulated
(BTA16)
TO-220AB
(BTB16)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
²
I
RMS on-state current
(full sine wave)
A
T(RMS)
D2 PA K
Tc = 100°C
16
TO-220AB
TO-220AB Ins.
F = 60 Hz
Tc = 85°C
t = 16.7 ms
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
168
160
A
TSM
F = 50 Hz
²
²
²
tp = 10 ms
144
50
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 125°C
Tj = 25°C
A/µs
V
I
= 2 x I , tr ≤ 100 ns
G
GT
V
/V
Non repetitive surge peak off-state
voltage
DRM RRM
V
/V
tp = 10 ms
tp = 20 µs
DSM RSM
+ 100
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
A
GM
P
Average gate power dissipation
1
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
O
1/4
BTA/BTB16 series
!!!!!!!!!!!!!!!!!16A Triacs logic level
!
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T16
BTA/BTB16
Unit
T1635
SW
CW
35
BW
I
(1)
mA
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
35
10
50
GT
V
V
V
= 12 V
= V
R = 33 Ω
D
D
L
1.3
V
GT
V
0.2
R = 3.3 kΩ Tj = 125°C
V
GD
DRM
L
I
(2)
L
I
= 500 mA
MAX.
MAX.
35
50
60
500
-
15
25
30
40
8.5
3.0
-
35
50
60
500
-
50
70
80
1000
-
mA
mA
H
T
I
I
= 1.2 I
I - III
II
G
GT
dV/dt (2)
V
= 67 % V
gate open Tj = 125°C
MIN.
MIN.
V/µs
D
DRM
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Tj = 125°C
Tj = 125°C
Tj = 125°C
A/ms
-
-
-
Without snubber
8.5
8.5
14
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB16
Unit
C
B
I
(1)
I - II - III
IV
25
50
50
100
mA
GT
MAX.
V
V
= 12 V
R = 33 Ω
L
D
V
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
D
DRM
L
I
(2)
L
I
= 500 mA
MAX.
MAX.
25
40
80
200
5
50
60
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
120
400
10
V
= 67 % V
gate open Tj = 125°C
dV/dt (2)
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c(2) (dI/dt)c = 7 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
V
(2)
(2)
I
= 22.5 A
tp = 380 µs
Threshold voltage
Dynamic resistance
= V
Tj = 25°C
MAX.
MAX.
MAX.
1.55
0.85
25
V
V
TM
TM
V
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
to
R (2)
mΩ
µA
mA
d
I
I
V
5
DRM
RRM
DRM
RRM
MAX.
2
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/4
BTA/BTB16 series
!!!!!!!!!!!!!!!
!
!!!16A Triacs logic level
OTHER INFORMATION
Part Number
Base
Packing
mode
Marking
BTA/BTB16xxxyz
Weight
quantity
BTA/BTB16-xxxyz
BTA/BTB16-xxxyzRG
T1635-xxxG
2.3 g
2.3 g
1.5 g
1.5 g
250
50
Bulk
Tube
BTA/BTB16-xxxyz
T1635xxxG
50
Tube
T1635-xxxG-TR
T1635xxxG
1000
Tape & reel
Note: xxx = voltage, y = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
Fig. 2-1: RMS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(RMS) (A)
20
18
BTB/T16
18
16
14
12
10
8
16
14
BTA
12
10
8
6
6
4
4
2
0
2
IT(RMS) (A)
Tc(°C)
0
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
Fig. 2-2: D²PAK RMS on-state current versus
ambient temperature (printed circuit board FR4,
copper thickness: 35 µm), full cycle.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
4.0
1E+0
D2PAK
3.5
Zth(j-c)
(S=1cm2)
3.0
2.5
2.0
1.5
1.0
1E-1
Zth(j-a)
tp (s)
0.5
Tamb(°C)
1E-2
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
50
75
100
125
3/4
BTA/BTB16 series
!!!!!!!!!!!!!!!!!!
!
16A Triacs logic level
Fig. 4: On-state characteristics (maximum
Fig. 5: Surge peak on-state current versus
values)
number of cycles.
ITM (A)
ITSM (A)
200
180
Tj max
100
160
140
120
100
80
t=20ms
One cycle
Non repetitive
Tj initial=25°C
10
Tj=25°C
Repetitive
Tc=85°C
60
Tj max:
40
Vto = 0.85 V
Rd = 25 mΩ
VTM (V)
20
Number of cycles
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
1000
Fig. 6: Non-repetitive surge peak on-state
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
ITSM (A), I²t (A²s)
2.5
3000
Tj initial=25°C
2.0
dI/dt limitation:
50A/µs
IGT
1000
1.5
IH & IL
ITSM
I²t
1.0
0.5
Tj(°C)
tp (ms)
0.0
100
0.01
-40 -20
0
20
40
60
80 100 120 140
0.10
1.00
10.00
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.0
1.8
SW
5
4
3
2
C
1.6
B
1.4
1.2
BW/CW/T1635
1.0
0.8
1
0.6
Tj (°C)
(dV/dt)c (V/µs)
0.4
0
0.1
1.0
10.0
100.0
0
25
50
75
100
125
4/4
相关型号：
T1601N30TOF
Silicon Controlled Rectifier, 4050A I(T)RMS, 1600000mA I(T), 3000V V(DRM), 3000V V(RRM), 1 Element,
INFINEON
©2020 ICPDF网 联系我们和版权申明