SST75C33F27

更新时间:2024-10-29 23:08:11
品牌:SUNTSU
描述:Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO

SST75C33F27 概述

Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO

SST75C33F27 数据手册

通过下载SST75C33F27数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO  
SST75C Series  
7.0mm x 5.0mm  
Features  
Stratum 3 (Overall ±±.6ppm )  
CMOS  
Applications  
Base Stations  
Stratum 3  
Small Cell  
(VC)TCXO  
Tape and Reel  
Part Numbering Guide  
SST 75 C 33 S 48 V F - 10.000M  
SUNTSU TCXO  
FREQUENCY  
MHz  
PULLABILITY  
7.0mm x 5.0mm  
CMOS  
BLANK : TCXO  
F : ±8.0ppm  
G : ±5.0ppm  
TCXO/VCTCXO  
BLANK : TCXO  
OPERATING  
SUPPLY VOLTAGE  
V : VCTCXO  
TEMPERATURE RANGE  
33 : 3.3V±5%  
FREQUENCY STABILITY  
07 : 0°C - +70°C  
50 : 5.0V±5%  
F : ±0.50ppm  
16 : -10°C - +60°C  
27 : -20°C - +70°C  
±8 : -±0°C - +85°C  
S : ±0.37ppm  
T : ±0.28ppm  
*U : ±0.1±ppm  
COMPLIANT  
Cage Code: ±GUT±  
To customize your parameters contact a Suntsu representative.  
* Option U is available only for -20°C to +70°C  
Electrical Parameters  
Units  
Minimum  
Typical  
Maximum  
Remarks  
Frequency Range  
MHz  
5
26  
Frequency Tolerance at +25ºC  
Freq. Stability vs. Op Temp.  
Holdover Stability  
ppm  
ppm  
ppm  
°C  
-±.6  
-0.28  
-0.37  
-±0  
+±.6  
+0.28  
+0.37  
+85  
+125  
3.±65  
5.250  
6
See part numbering guide for options.  
See part numbering guide for options.  
Operating Temperature  
Storage Temperature  
°C  
-55  
Supply Voltage (VDD) - 3.3V Option  
Supply Voltage (VDD) - 5.0V Option  
Current (IDD)  
V
3.135  
±.750  
3.3  
5.0  
V
mA  
V
Voltage (VC, VCTCXO) - 3.3V Option  
Voltage (VC, VCTCXO) - 5.0V Option  
Pullability (VCTCXO)  
0.5  
0.5  
2.5  
V
2.5  
ppm  
%
±5.0  
±8.0  
10  
See part numbering guide for options.  
Linearity (VCTCXO)  
Output Load (CMOS)  
pF  
15  
Output Logic HIGH Level (VOH)  
Output Logic LOW Level (VOL)  
Rise (TR) And Fall (TF) Time  
Symmetry (Duty Cycle)  
V
0.9*VDD  
V
0.1*VDD  
ns  
5
%
±5  
50  
55  
Tri-State Input Voltage (Enabled)  
Tri-State Input Voltage (Disabled)  
Start-Up Time  
V
0.7*VDD  
V
0.3*VDD  
2
ms  
kΩ  
dBc/Hz  
dBc/Hz  
dBc/Hz  
VC Input Impedance (VCTCXO)  
Phase Noise (Typical) 100Hz Offset  
Phase Noise (Typical) 1KHz Offset  
Phase Noise (Typical) 10KHz Offset  
100  
-120  
-1±0  
-1±8  
Suntsu Electronics, Inc.  
142 TECHNOLOGY DR., SUITE 150  
IRVINE, CA 92618  
www.suntsu.com  
Specifications are subject  
to change without notice.  
Call: +1-949-783-7300 | Fax: +1-949-783-7301  
Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO  
SST75C Series  
7.0mm x 5.0mm  
Outline Drawing & Land Pattern  
All dimensions are in millimeters (mm) unless otherwise noted. Drawings are not to scale.  
Test Circuit (CMOS)  
Waveform (CMOS)  
Typical Phase Noise Performance (Measured By Agilent E5052A)  
Frequency - 12.288MHz  
Frequency - 16.000MHz  
Suntsu Electronics, Inc.  
142 TECHNOLOGY DR., SUITE 150  
IRVINE, CA 92618  
www.suntsu.com  
Specifications are subject  
to change without notice.  
Call: +1-949-783-7300 | Fax: +1-949-783-7301  
Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO  
SST75C Series  
7.0mm x 5.0mm  
Typical Jitter Performance (Measured By Agilent E5052A)  
Frequency - 12.288MHz  
Reflow Profile  
Frequency - 16.000MHz  
Part Marking  
Tp (Time At 260°C. 20-40 Sec)  
260  
Rup (Ramp Up, 3°C/Sec Max)  
217  
200  
TI (Time Above 217°C.  
60-150Sec)  
150  
Rdn (Ramp Down,  
6°C/Sec Max)  
Ts (Preheat Time.  
60-180Sec)  
T 25°C to Peak (480Sec Max)  
Time (sec)  
Tape And Reel Dimensions  
All dimensions are in millimeters (mm) unless otherwise noted. Drawings are not to scale.  
1,000pcs/Reel  
Suntsu Electronics, Inc.  
142 TECHNOLOGY DR., SUITE 150  
IRVINE, CA 92618  
www.suntsu.com  
Specifications are subject  
to change without notice.  
Call: +1-949-783-7300 | Fax: +1-949-783-7301  
Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO  
SST75C Series  
7.0mm x 5.0mm  
Environmental Specifications  
Mechanical Specifications  
Temperature Cycling  
MIL-STD-883, Method 1010, Condition B  
Mechanical Shock  
MIL-STD-202, Method 213, Condition B  
MIL-STD-883, Method 2007, Condition A  
MIL-STD-883, Method 100±  
Fine Leak Test  
MIL-STD-883, Method 101±, Condition A  
MIL-STD-883, Method 101±, Condition C  
Vibration  
Gross Leak Test  
Moisture Resistance  
Solderability  
MIL-STD-883, Method 2003  
J-STD-020, MSL 1  
Resistance to Solvents  
MIL-STD-202, Method 215  
Moisture Sensitivity  
Resistance to Soldering Heat  
MIL-STD-202, Method 210, Condition K  
Suntsu Electronics, Inc.  
142 TECHNOLOGY DR., SUITE 150  
IRVINE, CA 92618  
www.suntsu.com  
Specifications are subject  
to change without notice.  
Call: +1-949-783-7300 | Fax: +1-949-783-7301  

SST75C33F27 相关器件

型号 制造商 描述 价格 文档
SST75C33F27F SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F27G SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F27V SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F27VF SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F27VG SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F48 SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F48F SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F48G SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F48V SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格
SST75C33F48VF SUNTSU Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO 获取价格

SST75C33F27 相关文章

  • HARTING(浩亭)圆形连接器产品选型手册
    2024-10-31
    6
  • HYCON(宏康科技)产品选型手册
    2024-10-31
    6
  • GREEGOO整流二极管和晶闸管产品选型手册
    2024-10-31
    7
  • 西门子豪掷106亿美元,战略收购工程软件巨头Altair
    2024-10-31
    8